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    TRANSISTOR D 140 G Search Results

    TRANSISTOR D 140 G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 140 G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ztx1056A

    Abstract: BF600 ztx1056 DSA003763
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve


    Original     		PDF ZTX1056A 100ms ZTX1056A 41E-12 0E-13 0E-10 1E-12 6E-12 800E-12 BF600 ztx1056 DSA003763

    bf500

    Abstract: ZTX1055A 161627 DSA003762
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve


    Original     		PDF ZTX1055A 100ms ZTX1055A 60E-12 0E-13 0E-10 3E-12 6E-12 700E-12 bf500 161627 DSA003762

    ztx1049a

    Abstract: DSA003762
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1049A t1 140 D=t1 tp D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 ra pe D=0.2 m te D=0.5 80 0.75 t en bi tp 120 Am Max Power Dissipation - Watts D=1(D.C) 160 100 ISSUE 1 – JUNE 1995


    Original     		PDF ZTX1049A 100ms ztx1049a DSA003762

    MJE 280 power transistor

    Abstract: ZTX1048A transistor bf 494 ZTX 450 F 1048A NPN Transistor 10A 100V DSA003762 136E-12
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1048A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am Max Power Dissipation - Watts D=1(D.C) 160 100 ISSUE 3 – FEBRUARY 1995


    Original     		PDF ZTX1048A 100ms NY11725 MJE 280 power transistor ZTX1048A transistor bf 494 ZTX 450 F 1048A NPN Transistor 10A 100V DSA003762 136E-12

    tf600

    Abstract: IC4a ZTX1051A DSA003762
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am


    Original     		PDF ZTX1051A 100ms NY11725 tf600 IC4a ZTX1051A DSA003762

    ZTX1053A

    Abstract: BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A t1 140 D=t1 tp D=0.2 D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 m te D=0.5 0.75 t en bi tp 120 Am


    Original     		PDF ZTX1053A 100ms NY11725 ZTX1053A BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12

    TF-450

    Abstract: BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1047A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible re tu D=0.1 0.50 ra pe 80 60 C B m te D=0.5 0.75 t en bi tp 120 Am


    Original     		PDF ZTX1047A 100ms NY11725 TF-450 BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761

    ASI10656

    Abstract: TVV010
    Text: TVV010 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .380 4L STUD DESCRIPTION: The ASI TVV010 is Designed for .112x45° A B D FEATURES: S • • • Omnigold Metalization System ØC S G D H I J MAXIMUM RATINGS F IC 10 A VCB 60 V VCE 35 V E PDISS 140 W @ TC = 25 OC


    Original     		PDF TVV010 112x45° TVV010 ASI10656 ASI10656

    2N5758

    Abstract: motorola msd6 MSD6100 1N5825 2N4398 2N5745 2N5760
    Text: MOTOROLA Order this document by 2N5758/D SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage


    Original     		PDF 2N5758/D* 2N5758/D 2N5758 motorola msd6 MSD6100 1N5825 2N4398 2N5745 2N5760

    ASI10657

    Abstract: TVV014
    Text: TVV014 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .500 6L FLG DESCRIPTION: A C The ASI TVV014 is Designed for 2x ØN FULL R D FEATURES: • • • Omnigold Metalization System B 60 V VCE 35 V PDISS 140 W -65 C to +200 C TJ inches / mm A .150 / 3.43


    Original     		PDF TVV014 TVV014 ASI10657 ASI10657

    ic 006

    Abstract: SD8250 F B J22
    Text: SD8250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N B E C G F I Q M A XIM U M M IN IM U M D IM in ch e s / m m in ch e s / m m .140 / 3.56 A .110 / 2.80 B .110 / 2.80 .395 / 10.03 .407 / 10.34 .193 / 4.90 E MAXIMUM RATINGS .230 / 5.84


    Original     		PDF SD8250 SD8250 ic 006 F B J22

    Untitled

    Abstract: No abstract text available
    Text: 2SD1140 TO SHIBA TO SHIBA TRANSISTOR 2 S D 1 140 SILICON NPN EPITAXIAL TYPE PCT PROCESS (D ARLING TO N) MICRO M O TO R DRIVE, H A M M E R DRIVE APPLICATIONS. Unit in mm SW ITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hjTE = 4000 (Min.)


    OCR Scan     		PDF 2SD1140

    2SD1140

    Abstract: No abstract text available
    Text: 2SD1140 TO SHIBA TOSHIBA TRANSISTOR 2 S D 1 140 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS. Unit in mm SWITCHING APPLICATIONS. 5.1 M AX. PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : hpE —4000 (Min.)


    OCR Scan     		PDF 2SD1140 75MAX 2SD1140

    2N3635

    Abstract: No abstract text available
    Text: ÀSII 2N3635 SILICON PNP TRANSISTOR DESCRIPTION: The 2N3635 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS Ie 300 mA Vce -140 V p d is s 5.0 W @ Tc$ 25 0C Tj -65 0C to +200 0C Ts t g -65 0C to +200 0C


    OCR Scan     		PDF 2N3635 2N3635

    1462, TRANSISTOR

    Abstract: C60H
    Text: » | O T fC # T jS 6 f I f f « 140 C o m m e rc e D rive Montgomeryville. PA 1893S-1013 Te|. 215 631 -9840 _ ^ ^ ^ S D 1 4 62 RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C . • ■ . ■ . « « CLASS C TRANSISTOR FREQUENCY 400MHz VOLTAG E 28V POWER OUT


    OCR Scan     		PDF 1893S-1013 400MHz 40OMHZ SD1462 1462, TRANSISTOR C60H

    2N6354M

    Abstract: No abstract text available
    Text: File Number H ARRIS 582 SEM ICON] 7^33 -/3 SECTOR SbE ]> 120-V, 10-A, 140-W Silicon N-P-N Planar Transistor 4 3 D2 2 7 1 2N6354 GG4 D S 3 7 bT7 «H A S TERMINAL DESIGNATIONS For Switching Applications in Military and Industrial Equipment Features: High V c e o sus): 120 V


    OCR Scan     		PDF 2N6354 2N6354 TA7534. MAXIMDS41 2N6354M

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1802 2 S A 1 802 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE STROBE FLASH APPLICATIONS M E D IU M POWER AMPLIFIER APPLICATIONS • Excellent hjpg Linearity : hFE i = 200-600 (Vc e = -2 V , Ic = -0 .5 A) : hFE (2) = 140 (Min.) (VCE = -2 V , IC = -3 A )


    OCR Scan     		PDF 2SA1802 2SC4681

    S0149

    Abstract: M1421
    Text: m m m R F Produci^ M ic m m s e m i 140 Commerce Drive Montgomeryvilie, PA 18936-1013 Tel: 215 631-9840 S D Ì 495 RF & MICROWAVE TRANSISTORS 850-890MHZ CLASS C, BASE STATIONS * < « • . . . CLASS C TRANSISTOR FREQUENCY 870MHz VOLTAGE 24V POWER OUT 35.0W


    OCR Scan     		PDF 850-890MHZ 870MHz M1421 SQ1495 S01495 720/18-aa S0149 M1421

    B452

    Abstract: RRJ diode h11q
    Text: 2DI75Z-140 75a '• O u tlin e D ra w in g s POWER TRANSISTOR MODULE : Features • iSHJŒ High Voltage • 7 ')— f r 'l'J 's 'ÿ ÿ 'f J '— KF*3 • A S O A '7 2 ;v .' • Including Freewheeling Diode E xc e lle n t S a fe O p eratin g Area In su late d Type


    OCR Scan     		PDF 2DI75Z-140 l9St/R89) B452 RRJ diode h11q

    2SA1802

    Abstract: 2SC4681
    Text: T O S H IB A 2SC4681 2SC4681 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE Unit in mm M E D IU M POWER AMPLIFIER APPLICATIONS • Excellent hjpg Linearity : hFE 1 = 200-600 (Vce = 2 V, IC = 0.5 A) : hFE (2) = 140 (Min.) (VCE = 2 V, Ic = 3 A)


    OCR Scan     		PDF 2SC4681 2SA1802 2SA1802 2SC4681

    Untitled

    Abstract: No abstract text available
    Text: ptQcj ucîs M ic m m s e m i 140 Commerce Drive Montgomery vii le, PA 18936-1013 Tel: 215 631-9840 S D 1496-3 RF & MICROWAVE TRANSISTORS 900-960MHz CLASS C, BASE STATIONS C U S S C TRANSISTOR f-RËQUENCY V O tïA G fc POWPR OUT POWER GAiN FFF1CIFNCY COM MO N BASE


    OCR Scan     		PDF 900-960MHz 960MHz SD1496-3 900-960M 230/S I65/3 345/S.

    transistor K30A

    Abstract: K30A transistor D1143 UNELCO SD1143 M135 33ph Arco 423 K30A
    Text: m 140 Commerce Drive ff M ontgom eryville, PA 18936-1013 H / tS -n a n j T L j - t - r t . « i n llr l/C ff y P ro g re s s P o w e re d b y T e c h no log y S D Ì 143 Tel: 215 631-9840 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS FM CLASS C TRANSISTOR


    OCR Scan     		PDF 230MHz 175MHz SD1143 SD1143 SS8SD1143-01 S88SD1 120pf 1000pf transistor K30A K30A transistor D1143 UNELCO M135 33ph Arco 423 K30A

    7B1A

    Abstract: 2SA1802 2SC4681 A1802
    Text: 2SA1802 TO SHIBA TENTATIVE 2 S A 1 802 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE Unit in mm STROBE FLASH APPLICATIONS. M E D IU M POWER AMPLIFIER APPLICATIONS. • a 8 MAX. Excellent hEE Linearity : hFE 1 = 200-600(VCE= -2 V , Ic = -0.5A) : hFE(2) = 140 (Min.) (VCE = -2 V , IC= -3 A )


    OCR Scan     		PDF 2SA1802 2SC4681 7B1A 2SA1802 A1802

    ZCA TRANSISTOR

    Abstract: ZCA db TRANSISTOR
    Text: Hf I v I I C t r O T r-» S 6 l f f # , , , , W 140 Com merce Drive Montgomeryviile, PA 18936-1013 1 " Tel: f l 5 631-9840 S D 1 13 2 “5 RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C MOBILE APPLICATIONS • CLASS C TRANSISTOR . FREQ UENCY ■ VOLTAG E


    OCR Scan     		PDF 450-512MHz 470MHz. O-b12MH/) SD1132-5 ZCA TRANSISTOR ZCA db TRANSISTOR