ztx1056A
Abstract: BF600 ztx1056 DSA003763
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve
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ZTX1056A
100ms
ZTX1056A
41E-12
0E-13
0E-10
1E-12
6E-12
800E-12
BF600
ztx1056
DSA003763
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bf500
Abstract: ZTX1055A 161627 DSA003762
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve
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ZTX1055A
100ms
ZTX1055A
60E-12
0E-13
0E-10
3E-12
6E-12
700E-12
bf500
161627
DSA003762
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ztx1049a
Abstract: DSA003762
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1049A t1 140 D=t1 tp D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 ra pe D=0.2 m te D=0.5 80 0.75 t en bi tp 120 Am Max Power Dissipation - Watts D=1(D.C) 160 100 ISSUE 1 JUNE 1995
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ZTX1049A
100ms
ztx1049a
DSA003762
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MJE 280 power transistor
Abstract: ZTX1048A transistor bf 494 ZTX 450 F 1048A NPN Transistor 10A 100V DSA003762 136E-12
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1048A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am Max Power Dissipation - Watts D=1(D.C) 160 100 ISSUE 3 FEBRUARY 1995
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ZTX1048A
100ms
NY11725
MJE 280 power transistor
ZTX1048A
transistor bf 494
ZTX 450
F 1048A
NPN Transistor 10A 100V
DSA003762
136E-12
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tf600
Abstract: IC4a ZTX1051A DSA003762
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am
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ZTX1051A
100ms
NY11725
tf600
IC4a
ZTX1051A
DSA003762
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ZTX1053A
Abstract: BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A t1 140 D=t1 tp D=0.2 D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 m te D=0.5 0.75 t en bi tp 120 Am
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ZTX1053A
100ms
NY11725
ZTX1053A
BF 245 A spice
ztx1053a datasheet
NC176
BF600
bf 245 spice
1053A
ZTX1053
zetex transistor to92
21E12
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TF-450
Abstract: BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1047A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible re tu D=0.1 0.50 ra pe 80 60 C B m te D=0.5 0.75 t en bi tp 120 Am
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ZTX1047A
100ms
NY11725
TF-450
BF 494 C
ztx 450
ZTX1047A
transistor bf 494
bf550
DSA003761
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ASI10656
Abstract: TVV010
Text: TVV010 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .380 4L STUD DESCRIPTION: The ASI TVV010 is Designed for .112x45° A B D FEATURES: S • • • Omnigold Metalization System ØC S G D H I J MAXIMUM RATINGS F IC 10 A VCB 60 V VCE 35 V E PDISS 140 W @ TC = 25 OC
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TVV010
112x45°
TVV010
ASI10656
ASI10656
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2N5758
Abstract: motorola msd6 MSD6100 1N5825 2N4398 2N5745 2N5760
Text: MOTOROLA Order this document by 2N5758/D SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage
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2N5758/D*
2N5758/D
2N5758
motorola msd6
MSD6100
1N5825
2N4398
2N5745
2N5760
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ASI10657
Abstract: TVV014
Text: TVV014 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .500 6L FLG DESCRIPTION: A C The ASI TVV014 is Designed for 2x ØN FULL R D FEATURES: • • • Omnigold Metalization System B 60 V VCE 35 V PDISS 140 W -65 C to +200 C TJ inches / mm A .150 / 3.43
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TVV014
TVV014
ASI10657
ASI10657
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ic 006
Abstract: SD8250 F B J22
Text: SD8250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N B E C G F I Q M A XIM U M M IN IM U M D IM in ch e s / m m in ch e s / m m .140 / 3.56 A .110 / 2.80 B .110 / 2.80 .395 / 10.03 .407 / 10.34 .193 / 4.90 E MAXIMUM RATINGS .230 / 5.84
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SD8250
SD8250
ic 006
F B J22
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Untitled
Abstract: No abstract text available
Text: 2SD1140 TO SHIBA TO SHIBA TRANSISTOR 2 S D 1 140 SILICON NPN EPITAXIAL TYPE PCT PROCESS (D ARLING TO N) MICRO M O TO R DRIVE, H A M M E R DRIVE APPLICATIONS. Unit in mm SW ITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hjTE = 4000 (Min.)
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2SD1140
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2SD1140
Abstract: No abstract text available
Text: 2SD1140 TO SHIBA TOSHIBA TRANSISTOR 2 S D 1 140 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS. Unit in mm SWITCHING APPLICATIONS. 5.1 M AX. PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : hpE —4000 (Min.)
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2SD1140
75MAX
2SD1140
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2N3635
Abstract: No abstract text available
Text: ÀSII 2N3635 SILICON PNP TRANSISTOR DESCRIPTION: The 2N3635 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS Ie 300 mA Vce -140 V p d is s 5.0 W @ Tc$ 25 0C Tj -65 0C to +200 0C Ts t g -65 0C to +200 0C
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2N3635
2N3635
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1462, TRANSISTOR
Abstract: C60H
Text: » | O T fC # T jS 6 f I f f « 140 C o m m e rc e D rive Montgomeryville. PA 1893S-1013 Te|. 215 631 -9840 _ ^ ^ ^ S D 1 4 62 RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C . • ■ . ■ . « « CLASS C TRANSISTOR FREQUENCY 400MHz VOLTAG E 28V POWER OUT
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1893S-1013
400MHz
40OMHZ
SD1462
1462, TRANSISTOR
C60H
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2N6354M
Abstract: No abstract text available
Text: File Number H ARRIS 582 SEM ICON] 7^33 -/3 SECTOR SbE ]> 120-V, 10-A, 140-W Silicon N-P-N Planar Transistor 4 3 D2 2 7 1 2N6354 GG4 D S 3 7 bT7 «H A S TERMINAL DESIGNATIONS For Switching Applications in Military and Industrial Equipment Features: High V c e o sus): 120 V
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2N6354
2N6354
TA7534.
MAXIMDS41
2N6354M
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA1802 2 S A 1 802 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE STROBE FLASH APPLICATIONS M E D IU M POWER AMPLIFIER APPLICATIONS • Excellent hjpg Linearity : hFE i = 200-600 (Vc e = -2 V , Ic = -0 .5 A) : hFE (2) = 140 (Min.) (VCE = -2 V , IC = -3 A )
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2SA1802
2SC4681
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S0149
Abstract: M1421
Text: m m m R F Produci^ M ic m m s e m i 140 Commerce Drive Montgomeryvilie, PA 18936-1013 Tel: 215 631-9840 S D Ì 495 RF & MICROWAVE TRANSISTORS 850-890MHZ CLASS C, BASE STATIONS * < « • . . . CLASS C TRANSISTOR FREQUENCY 870MHz VOLTAGE 24V POWER OUT 35.0W
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850-890MHZ
870MHz
M1421
SQ1495
S01495
720/18-aa
S0149
M1421
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B452
Abstract: RRJ diode h11q
Text: 2DI75Z-140 75a '• O u tlin e D ra w in g s POWER TRANSISTOR MODULE : Features • iSHJŒ High Voltage • 7 ')— f r 'l'J 's 'ÿ ÿ 'f J '— KF*3 • A S O A '7 2 ;v .' • Including Freewheeling Diode E xc e lle n t S a fe O p eratin g Area In su late d Type
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2DI75Z-140
l9St/R89)
B452
RRJ diode
h11q
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2SA1802
Abstract: 2SC4681
Text: T O S H IB A 2SC4681 2SC4681 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE Unit in mm M E D IU M POWER AMPLIFIER APPLICATIONS • Excellent hjpg Linearity : hFE 1 = 200-600 (Vce = 2 V, IC = 0.5 A) : hFE (2) = 140 (Min.) (VCE = 2 V, Ic = 3 A)
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2SC4681
2SA1802
2SA1802
2SC4681
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Untitled
Abstract: No abstract text available
Text: ptQcj ucîs M ic m m s e m i 140 Commerce Drive Montgomery vii le, PA 18936-1013 Tel: 215 631-9840 S D 1496-3 RF & MICROWAVE TRANSISTORS 900-960MHz CLASS C, BASE STATIONS C U S S C TRANSISTOR f-RËQUENCY V O tïA G fc POWPR OUT POWER GAiN FFF1CIFNCY COM MO N BASE
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900-960MHz
960MHz
SD1496-3
900-960M
230/S
I65/3
345/S.
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transistor K30A
Abstract: K30A transistor D1143 UNELCO SD1143 M135 33ph Arco 423 K30A
Text: m 140 Commerce Drive ff M ontgom eryville, PA 18936-1013 H / tS -n a n j T L j - t - r t . « i n llr l/C ff y P ro g re s s P o w e re d b y T e c h no log y S D Ì 143 Tel: 215 631-9840 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS FM CLASS C TRANSISTOR
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230MHz
175MHz
SD1143
SD1143
SS8SD1143-01
S88SD1
120pf
1000pf
transistor K30A
K30A transistor
D1143
UNELCO
M135
33ph
Arco 423
K30A
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7B1A
Abstract: 2SA1802 2SC4681 A1802
Text: 2SA1802 TO SHIBA TENTATIVE 2 S A 1 802 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE Unit in mm STROBE FLASH APPLICATIONS. M E D IU M POWER AMPLIFIER APPLICATIONS. • a 8 MAX. Excellent hEE Linearity : hFE 1 = 200-600(VCE= -2 V , Ic = -0.5A) : hFE(2) = 140 (Min.) (VCE = -2 V , IC= -3 A )
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2SA1802
2SC4681
7B1A
2SA1802
A1802
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ZCA TRANSISTOR
Abstract: ZCA db TRANSISTOR
Text: Hf I v I I C t r O T r-» S 6 l f f # , , , , W 140 Com merce Drive Montgomeryviile, PA 18936-1013 1 " Tel: f l 5 631-9840 S D 1 13 2 “5 RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C MOBILE APPLICATIONS • CLASS C TRANSISTOR . FREQ UENCY ■ VOLTAG E
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450-512MHz
470MHz.
O-b12MH/)
SD1132-5
ZCA TRANSISTOR
ZCA db TRANSISTOR
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