TRANSISTOR COMPATIBLE K3562 Search Results

TRANSISTOR COMPATIBLE K3562 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR COMPATIBLE K3562 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
k3562 Abstract: k3562 transistor transistor k3562 2SK3562 2sk3562 equivalent 2SK3562 K3562 transistor compatible k3562 equivalent 2sk3562 toshiba k3562 k3562 voltage Text: 2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3562 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.0S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3562 k3562 k3562 transistor transistor k3562 2SK3562 2sk3562 equivalent 2SK3562 K3562 transistor compatible k3562 equivalent 2sk3562 toshiba k3562 k3562 voltage	PDF
2sk3562 Abstract: k3562 transistor K3562 transistor k3562 k3562 voltage transistor compatible k3562 toshiba k3562 2SK3562 K3562 Text: 2SK3562 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3562 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.0 S (typ.)	Original	2SK3562 2sk3562 k3562 transistor K3562 transistor k3562 k3562 voltage transistor compatible k3562 toshiba k3562 2SK3562 K3562	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

k3562

Abstract: k3562 transistor transistor k3562 2SK3562 2sk3562 equivalent 2SK3562 K3562 transistor compatible k3562 equivalent 2sk3562 toshiba k3562 k3562 voltage
Text: 2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3562 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)

Original

2SK3562 k3562 k3562 transistor transistor k3562 2SK3562 2sk3562 equivalent 2SK3562 K3562 transistor compatible k3562 equivalent 2sk3562 toshiba k3562 k3562 voltage

PDF

2sk3562

Abstract: k3562 transistor K3562 transistor k3562 k3562 voltage transistor compatible k3562 toshiba k3562 2SK3562 K3562
Text: 2SK3562 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3562 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.)