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    TRANSISTOR COMPARISON Search Results

    TRANSISTOR COMPARISON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR COMPARISON Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    power bjt advantages and disadvantages

    Abstract: HXTR-3101 Design DC Stability Into Your Transistor Circuits Hxtr 3101 transistor TRANSISTORS BJT list Silicon Bipolar Transistor Hewlett-Packard Hewlett-Packard transistor microwave IRB1 HBFP0405 HBFP-0405
    Text: A Comparison of Various Bipolar Transistor Biasing Circuits Application Note 1293 Introduction The bipolar junction transistor BJT is quite often used as a low noise amplifier in cellular, PCS, and pager applications due to its low cost. With a minimal number


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    HBFP-0405 HBFP-0420 5968-2387E. 5988-6173EN power bjt advantages and disadvantages HXTR-3101 Design DC Stability Into Your Transistor Circuits Hxtr 3101 transistor TRANSISTORS BJT list Silicon Bipolar Transistor Hewlett-Packard Hewlett-Packard transistor microwave IRB1 HBFP0405 HBFP-0405 PDF

    IGBT/MOSFET Gate Drive

    Abstract: IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging
    Text: VISHAY SEMICONDUCTORS Optocouplers and Solid-State Relays Application Note IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect transistor) and a BJT (bipolar junction transistor) since it


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    20-May-09 IGBT/MOSFET Gate Drive IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging PDF

    transistor BUJ100

    Abstract: cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor BUJ100 cfl circuit
    Text: PHILIPS SEMICONDUCTORS APPLICATION NOTE Philips' BUJ100 transistor in TO-92 suits all Compact Fluorescent Lamp powers Philips Semiconductors has developed a new generation of planar passivated, fast switching bipolar lighting transistor that breaks new ground in lighting-transistor technology. Rated at 700 V


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    BUJ100 transistor BUJ100 cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor cfl circuit PDF

    CS1W-CN118

    Abstract: AR2315 CS1W-CN114 cable connection diagram CPM2C-BAT01 cn118 CS1W-CN118 cable connection diagram CN111 CPM2C CS1W-CN118 cable datasheet 500 hour counter with memory function circuit diagram
    Text: CPM2C Specifications CPM2C General Specifications CPU Units with 10 I/O points Item Relay outputs Transistor outputs CPU Units with 20 I/O points Transistor outputs Expansion I/O Units 10 I/O points (Relay outputs) 24 I/O points (Transistor outputs) Supply voltage


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    075-mm accele300 OUT01000 OUT01001: OUT01002 CS1W-CN118 AR2315 CS1W-CN114 cable connection diagram CPM2C-BAT01 cn118 CS1W-CN118 cable connection diagram CN111 CPM2C CS1W-CN118 cable datasheet 500 hour counter with memory function circuit diagram PDF

    HAT1058C

    Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,


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    notic50 SON3024-8 HAT1062G ADE-A08-003Q HAT1058C HAT2106G HAT1068C Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23 PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


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    REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    MJ10100

    Abstract: all transistor transistor Common Base configuration AN875 transistor on semiconductor AN875 K.S. Terminals USE OF TRANSISTOR MJ10021 fastest finger first
    Text: AN875/D Power Transistor Safe Operating Area Special Considerations for Switching Power Supplies http://onsemi.com Prepared by: Warren Schultz Applications Engineering APPLICATION NOTE Introduction The power transistor, in today’s switching power supply,


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    AN875/D r14525 MJ10100 all transistor transistor Common Base configuration AN875 transistor on semiconductor AN875 K.S. Terminals USE OF TRANSISTOR MJ10021 fastest finger first PDF

    BC108 characteristic

    Abstract: BC237 c 2026 y transistor msc2295 marking 7m SOT-323
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors MUN5211DW1T1 SERIES NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a


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    MUN5211DW1T1 Reduc218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC108 characteristic BC237 c 2026 y transistor msc2295 marking 7m SOT-323 PDF

    GE Transistor Manual

    Abstract: transistor k 316 35820 transistor circuit design
    Text: Microwave Transistor Bias Considerations Application Note 944-1 Introduction Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent in measuring s-parameters, calculating gain, and optimizing


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    5988-0424EN GE Transistor Manual transistor k 316 35820 transistor circuit design PDF

    transistor 2n1141

    Abstract: MOTOROLA 2n2218 TRANSISTOR 2N1141 beta of 2n2218 2N2218 AN139A
    Text: Order this document by AN139A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN139A Understanding Transistor Response Parameters Prepared by: Roy Hejhall Applications Engineering This note explains high–frequency transistor response parameters and discusses their interdependance. Useful


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    AN139A/D AN139A transistor 2n1141 MOTOROLA 2n2218 TRANSISTOR 2N1141 beta of 2n2218 2N2218 AN139A PDF

    td6202

    Abstract: diagram TD62304ap td62003ap TD6202AP 14D34 DARLINGTON ARRAYS TD62001 TD62081AP td62506p TD62001AP
    Text: [3] Product Description and Application Examples [ 3 ] Product Description and Application Examples 1. Product Description 1.1 Transistor Array/Interface Drivers Transistor arrays and interface driver ICs are suitable for driving inductance loads, such as dot


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    TB62600F 64-bit td6202 diagram TD62304ap td62003ap TD6202AP 14D34 DARLINGTON ARRAYS TD62001 TD62081AP td62506p TD62001AP PDF

    BC237

    Abstract: equivalent to BC177 2n6431
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic


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    MUN5111DW1T1 Reduc218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 equivalent to BC177 2n6431 PDF

    486DX-CPU

    Abstract: tamagawa 486DX transistors mos retrograde well 0.35
    Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling


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    BC237

    Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


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    SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1 PDF

    Philips high frequency bipolar transistor with Ft

    Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


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    MGM011 BLV861 BLV2045 Philips high frequency bipolar transistor with Ft equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout PDF

    NTC 220-11

    Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


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    transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide PDF

    BF245 A spice

    Abstract: BF245 spice electronic power generator using transistor BF245A spice BF245 BF245 B spice BF245 TRANSISTOR transistor BF245 Fet BF245 BF245 spice model
    Text: Analog Electronics I Laboratory Exercise 2 FET Amplifier Aim of the exercise The aim of this laboratory exercise is to become familiar with operation of simple single FET transistor amplifier. Exercise illustrates transistor polarization, frequency characteristics and


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    100kHz BF245 A spice BF245 spice electronic power generator using transistor BF245A spice BF245 BF245 B spice BF245 TRANSISTOR transistor BF245 Fet BF245 BF245 spice model PDF

    Untitled

    Abstract: No abstract text available
    Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor


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    LM96163 LM96163 2N3904, PDF

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


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    Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237 PDF

    Transistor 2N2905A

    Abstract: BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a


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    MUN5311DW1T1 Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 Transistor 2N2905A BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92 PDF

    Untitled

    Abstract: No abstract text available
    Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor


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    LM96163 2N3904, PDF

    SOT23 JEDEC standard orientation pad size

    Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


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    OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458 PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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