2470
Abstract: 55AP transistor Common Base amplifier
Text: R.A.P.992605-BEHRE 2425-25 25 WATT, 24V, Class C Microwave 2410-2470 MHz GENERAL DESCRIPTION CASE OUTLINE 55AP Common Base Narrow Lead The 2425-25 is a common base bipolar transistor capable of providing 25 Watts of Class C RF output power over the band of 2410-2470 MHz. This transistor is
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992605-BEHRE
2470
55AP
transistor Common Base amplifier
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TAN75A
Abstract: common base transistor
Text: TAN75A NPN RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: The ASI TAN75A is a Common Base Transistor Designed for TACAN Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching
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TAN75A
TAN75A
common base transistor
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J162
Abstract: transistor j162 SATCOM ASAT35L
Text: ASAT35L NPN RF POWER TRANSISTOR DESCRIPTION: The ASAT35L is a Common Base Transistor Designed for L-Band Satcom Amplifier Applications. PACKAGE STYLE 400 2L FLG FEATURES INCLUDE: • Input/Output Matching Networks • Gold Metallization • Emitter Ballasting
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ASAT35L
ASAT35L
J162
transistor j162
SATCOM
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TAN250A
Abstract: TACAN transistor TACAN
Text: TAN250A RF POWER TRANSISTOR DESCRIPTION: The ASI TAN250A is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. PACKAGE STYLE FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching MAXIMUM RATINGS
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TAN250A
TAN250A
TACAN transistor
TACAN
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norton amplifier
Abstract: LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode
Text: National Semiconductor Application Note 278 Timothy T. Regan September 1981 Why Another Norton Amplifier? there is no Miller effect on the collector-to-base capacitance of the input transistor. Also, there is no collector-to-emitter parasitic feedback in the common base configured transistor, Q2, so the high frequency signal appearing at the output
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AN-278
norton amplifier
LM3900 VCO
jfet discrete differential transistor
jfet cascode
internal structure of ic lm3900
ULTRA HIGH SPEED FREQUENCY DIVIDER
LM359
operational amplifier discrete schematic
norton op. amp
Designing Type II Compensation for Current Mode
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MSC80183
Abstract: MSC85623
Text: MSC80183 NPN RF TRANSISTOR DESCRIPTION: The ASI MSC80183 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for Amplifier/Oscillator Applications up to 2.3 GHz. PACKAGE 230 2L FLG FEATURES: • • Hermetically Sealed Package
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MSC80183
MSC80183
MSC85623
MSC85623
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2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
Abstract: 2.4 ghz transmitter rf test equivalent transistor rf "30 mhz"
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR
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MRF16030
MRF16030
2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
2.4 ghz transmitter rf test
equivalent transistor rf "30 mhz"
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2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
Abstract: 2.4 ghz transmitter rf test
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR
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MRF16006
MRF16006
2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
2.4 ghz transmitter rf test
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AM0912-150
Abstract: JTIDS 2L TRANSISTOR "RF Power Transistor"
Text: AM0912-150 RF POWER TRANSISTOR PACKAGE - .400 X .500 2L FLG DESCRIPTION: The ASI AM0912-150 is a Common Base Transistor Designed for TCAS and JTIDS Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching
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AM0912-150
AM0912-150
JTIDS
2L TRANSISTOR
"RF Power Transistor"
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AM0912-080
Abstract: TACAN TACAN transistor
Text: AM0912-080 RF POWER TRANSISTOR DESCRIPTION: The ASI AM0912-080 is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching PACKAGE - .400 x .400 2NLFL
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AM0912-080
AM0912-080
TACAN
TACAN transistor
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Untitled
Abstract: No abstract text available
Text: AM0912-080 RF POWER TRANSISTOR DESCRIPTION: The ASI AM0912-080 is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching PACKAGE - .400 x .400 2NLFL
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AM0912-080
AM0912-080
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MMBTH10RG
Abstract: No abstract text available
Text: MMBTH10RG MMBTH10RG NPN RF Transistor C • This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators.
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MMBTH10RG
OT-23
MMBTH10RG
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motorola sps transistor
Abstract: motorola 572 transistor Motorola 1600 395C-01 sps transistor
Text: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR
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MRF16030/D
MRF16030
MRF16030
DEVICEMRF16030/D
motorola sps transistor
motorola 572 transistor
Motorola 1600
395C-01
sps transistor
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2SC5170
Abstract: LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5170 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5170 is a silicon NPN epitaxial type transistor. It is designed for
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2SC5170
2SC5170
100Hz)
110mVtyp
X10-3
LE300
mitsubishi vcb
transistor Common Base amplifier
common base amplifier circuit
DUAL TRANSISTOR
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BFY88
Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
Text: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration
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i200Rb
D0DS332
ft-11
569-GS
000s154
hal66
if-11
BFY88
Telefunken u 237
transistor marking code 2C
BFY 88
telefunken C80
ui77
silicon npn planar rf transistor sot 143
IMB 06 C
BFY 52 transistor
95288
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UHF TRANSISTOR
Abstract: 700M SG991AC
Text: GAE GREAT AMERICAN ELECTROINCS SG991AC Silicon NPN high power UHF transistor SG991AC Transistor Assembly is designed for Class C common base push-pull wide band output amplifier applications in the 350-700 Mhz frequency range. Output Power: Frequency Range:
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SG991AC
FO-57C
0D000S?
UHF TRANSISTOR
700M
SG991AC
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UHF TRANSISTOR
Abstract: SG9132AC
Text: w GAE GREAT AMERICAN ELECTROINCS SG9132AC Silicon NPN high power UHF transistor SG9132AC Transistor Assembly is designed for Class C common base push-pull wide band output amplifier applications in the 350-700 Mhz frequency range. Output Power: Frequency Range:
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SG9132AC
FO-57C
Volt-57C
UHF TRANSISTOR
SG9132AC
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UHF TRANSISTOR
Abstract: SG9101AC transistor Common collector configuration npn 28v 100w amplifier
Text: GAE GREAT AMERICAN ELECTROINCS SG9101AC Silicon NPN high power UHF transistor SG9101 AC Transistor Assembly is designed for Class C common base push-pull wide band output amplifier applications in the 350-700 Mhz frequency range. Output Power: Frequency Range:
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SG9101AC
SG9101
FO-57C
700MhzA/cc
000004b
UHF TRANSISTOR
SG9101AC
transistor Common collector configuration
npn 28v 100w amplifier
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D • bb53T31 □01SE7ci 1 ■ RZB12050Y -r -5 3 -1 3 J PULSED MICROWAVE POWER TRANSISTOR NPN silicon microwave power transistor intended for use in a common-base, class-C narrowband amplifier operating under pulsed conditions.
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bb53T31
01SE7c
RZB12050Y
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D • bbSBTBl 0015121 T I _ J V PVB42004X T ~ Z 1 - 01 MICROWAVE POWER TRANSISTOR N-P-N silicon microwave power transistor for use in a common-base, class-B power amplifier up to 4,2 GHz. Features:
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PVB42004X
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2689* transistor
Abstract: MRF1035
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistor Designed for 10 25-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • 70 W PEAK 1025-1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON
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MRF10500
MRF10350
376C00
MRF10070
2689* transistor
MRF1035
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Untitled
Abstract: No abstract text available
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F 1500 The RF Line M icrowave Pulse Power Transistor Motorola Preferred Device Designed for 1025-1150 MHz pulse common base amplifier applications such as DME. • 500 W PEAK . 1025-1150 MHz MICROWAVE POWER TRANSISTOR
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MRF1500
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motorola 269-5
Abstract: z627
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistor . . . designed for 1 0 25-1 150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • 150 W PEAK 1025-1150 MHz MICROWAVE POWER TRANSISTOR
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MRF10500
MRF10150
motorola 269-5
z627
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BF314
Abstract: TRANSISTOR bf314
Text: ' "JÊ S ILIC O N sS NPN HIGH PLANAR EPITAXIAL FREQUENCY TRANSISTOR % MECHANICAL OUTLINE GENERAL DESCRIPTION : The BF31^ is a NPN silicon planar epitaxial transistor designed for use as RF amplifier and VHF & UHF input stage in common base configuration. TO-92F
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BF314
O-92F
120ohm
190MHz
100MHz
200MHz
100MHz
TRANSISTOR bf314
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