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    TRANSISTOR COLLECTOR EMITER BASE Search Results

    TRANSISTOR COLLECTOR EMITER BASE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR COLLECTOR EMITER BASE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC327

    Abstract: No abstract text available
    Text: BC327 TO-92 Plastic-Encapsulate Transistor s Transistor PNP TO-92 1.COLLECTOR 2.BASE 3.EMITTER 1 2 3 TYPICAL CHARACTERISTICS -1.0 -1.0 o T A =25 o C T j =25 C V BE (sat)@Ic/I B =10 -0.8 Ic=-500mA -0.6 -0.4 Ic=-300mA -0.2 V VOLTAGE(VOLTS) V CE ,COLLECTOR EMITTER VOLTAGE(VOLTS)


    Original     		PDF BC327 -500mA -300mA -100mA -10mA 100us BC327

    transistor collector emiter base

    Abstract: No abstract text available
    Text: 2223-1.7 1.7 Watts - 24 Volts, Class C Microwave 2200 - 2300 MHz CASE OUTLINE GENERAL DESCRIPTION The 2223-1.7 is a COMMON BASE transistor capable of providing 1.7 Watts of Class C, RF output power over the band 2200 - 2300 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It


    Original     		PDF 160mA transistor collector emiter base

    microwave amplifier 2.4 ghz 10 watts

    Abstract: transistor Common Base amplifier
    Text: 2223-1.7 1.7 Watts - 24 Volts, Class C Microwave 2200 - 2300 MHz CASE OUTLINE GENERAL DESCRIPTION The 2223-1.7 is a COMMON BASE transistor capable of providing 1.7 Watts of Class C, RF output power over the band 2200 - 2300 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It


    Original     		PDF 160mA microwave amplifier 2.4 ghz 10 watts transistor Common Base amplifier

    microwave amplifier 2.4 ghz 10 watts

    Abstract: 2223 2223-9A transistor Common Base amplifier
    Text: 2223-9A 9 Watts - 24 Volts, Class C Microwave 2200 - 2300 MHz CASE OUTLINE 55AW, STYLE 1 GENERAL DESCRIPTION The 2223-9 is a COMMON BASE transistor capable of providing 9 Watts of Class C, RF output power over the band 2200 - 2300 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes


    Original     		PDF 223-9A 160mA microwave amplifier 2.4 ghz 10 watts 2223 2223-9A transistor Common Base amplifier

    MDS400

    Abstract: No abstract text available
    Text: MDS400 400 Watts Pk, 45 Volts, 32µs, 2% Avionics 1030-1090 MHz GENERAL DESCRIPTION CASE OUTLINE The MDS400 is a COMMON BASE transistor capable of providing 400 Watts Peak, Pulsed, RF Output Power over the band 1030-1090 MHz. The transistor includes double input prematching for full broadband capability. Gold


    Original     		PDF MDS400 MDS400

    9BSE55

    Abstract: No abstract text available
    Text: 9BSE55 55 Watts, 25 Volts CELLULAR 850-960 MHz CASE OUTLINE GENERAL DESCRIPTION The 9BSE55 is a COMMON BASE, silicon bipolar transistor capable of providing 55 watts of output power at 960 MHz. The device is designed for cellular base station applications in the 850 to 960 MHz frequency range.


    Original     		PDF 9BSE55 9BSE55

    C5201 transistor

    Abstract: 2sc5201 c5201 25j1A
    Text: 2SC5201 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications • High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE sat = 1.0 V (max) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5201 C5201 transistor 2sc5201 c5201 25j1A

    transistor H 649A

    Abstract: No abstract text available
    Text: WTM649A PNP Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -160 V Emitter-Base Voltage VEBO


    Original     		PDF WTM649A OT-89 WTM649A -160V, 01-Aug-05 OT-89 500TYP transistor H 649A

    WTM2222A

    Abstract: WTM2907A MARKING 2907A npn 2907A wtm290
    Text: WTM2907A PNP Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER Features: 2 3 * Low Collector Saturation Voltage * High Spwwd Switching * For Complementary Use With NPN Type WTM2222A ABSOLUTE MAXIMUM RATINGS (TA=25˚C)


    Original     		PDF WTM2907A OT-89 WTM2222A 24-Mar-06 OT-89 500TYP WTM2222A WTM2907A MARKING 2907A npn 2907A wtm290

    transistor 649A

    Abstract: 101B WTM649A
    Text: WTM649A PNP Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -160 V Emitter-Base Voltage VEBO


    Original     		PDF WTM649A OT-89 WTM649A -160V, 01-Aug-05 OT-89 500TYP transistor 649A 101B

    transistor 669A

    Abstract: wtm669a h 669A 101B transistor marking 04
    Text: WTM669A NPN Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO


    Original     		PDF WTM669A OT-89 WTM669A -160V, 01-Aug-05 WTM649A OT-89 500TYP transistor 669A h 669A 101B transistor marking 04

    transistor 669A

    Abstract: h 669A wtc66 101B 669a transistor 160v 1.5a pnp
    Text: WTM669A PNP Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO


    Original     		PDF WTM669A OT-89 WTM669A -160V, 01-Aug-05 WTM649A OT-89 500TYP transistor 669A h 669A wtc66 101B 669a transistor 160v 1.5a pnp

    Untitled

    Abstract: No abstract text available
    Text: WTM2907A PNP Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER Features: 2 3 * Low Collector Saturation Voltage * High Spwwd Switching * For Complementary Use With NpN Type WTM2222A ABSOLUTE MAXIMUM RATINGS (TA=25˚C)


    Original     		PDF WTM2907A OT-89 WTM2222A 24-Mar-06 OT-89 500TYP

    transistor collector emiter base

    Abstract: NTE363
    Text: NTE363 Silicon NPN Transistor RF Power Amp, PO = 4W Description: The NTE363 is a 12.5V epitaxial silicon NPN planer transistor designed primarily for UHF communications. Features: D Designed for UHF Military and Commercial Equipment D 4W Min with Greater than 8dB Gain


    Original     		PDF NTE363 NTE363 500mV, 470MHz/12 transistor collector emiter base

    2N2894

    Abstract: 2n2894 transistor TRANSISTOR 533
    Text: 2N2894 PNP SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) • SILICON PNP TRANSISTOR 5.33 (0.210) 4.32 (0.170) • HIGH SPEED, LOW SATURATION SWITCH 12.7 (0.500) min. APPLICATIONS:


    Original     		PDF 2N2894 200mA 100MHz 140KHz 300ms, 2N2894 2n2894 transistor TRANSISTOR 533

    UTV8100B

    Abstract: 55RT GHz Technology
    Text: UTV8100B 100 Watts Pk, 28 Volt, Class AB UHF Television - Band IV & V GENERAL DESCRIPTION CASE OUTLINE 55RT, STYLE 2 The UTV8100B is a COMMON EMITTER transistor capable of providing 100 Watt Peak, Class AB, RF Output Power over the band 470 - 860 MHz. The transistor includes double input and output prematching for full


    Original     		PDF UTV8100B UTV8100B 55RT GHz Technology

    UTV100B

    Abstract: UTV100
    Text: UTV100B 100 Watts Pk, 28 Volt, Class AB UHF Television - Band IV & V GENERAL DESCRIPTION CASE OUTLINE 55RT, STYLE 2 The UTV100B is a COMMON EMITTER transistor capable of providing 100 Watt Peak, Class AB, RF Output Power over the band 470 - 860 MHz. The transistor includes double input and output prematching for full broadband


    Original     		PDF UTV100B UTV100B UTV100

    capacitor ceramic 33pF

    Abstract: 1mF CAPACITOR 10pf ceramic CAPACITOR capacitors ceramic 33pF ceramic capacitor 10pf L9 transistor capacitor 10mf 10MF ELECTROLYTIC 50w rf power transistor
    Text: 0204-125 125 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz CASE OUTLINE GENERAL DESCRIPTION 55JT- Style 2 The 0204-125 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 225-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused


    Original     		PDF 5-10pF capacitor ceramic 33pF 1mF CAPACITOR 10pf ceramic CAPACITOR capacitors ceramic 33pF ceramic capacitor 10pf L9 transistor capacitor 10mf 10MF ELECTROLYTIC 50w rf power transistor

    0105-50

    Abstract: No abstract text available
    Text: 0105-50 50 Watts, 28 Volts, Class AB Defcom 100 - 500 MHz GENERAL DESCRIPTION CASE OUTLINE The 0105-50 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 100-500 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 0104-100 100 Watts, 28 Volts, Class AB Defcom 100 - 400 MHz GENERAL DESCRIPTION CASE OUTLINE The 0104-100 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 100-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused


    Original     		PDF 25akdown

    s175-50

    Abstract: No abstract text available
    Text: S175 - 50 175 Watts, 50 Volts, Class AB Milcom 1.5 - 30 MHz CASE OUTLINE GENERAL DESCRIPTION 55HX, Style 2 The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A, AB or C operation in the HF/VHF frequency bands. Its high collector voltage simplifies the design of wideband, SSB linear amplifiers. The transistor chip is


    Original     		PDF S175-50 S175-50

    MMBT3904LT1

    Abstract: 9B SOT23
    Text: Hnnnm SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITER FEATURES 3. COLLECTOR Power dissipation 0-2 Pcm: 2.4 W (T am b=25t) Collector current I CM: 0 .2 A Collector-base voltage 60 V Operating and storage junction temperature range


    OCR Scan     		PDF OT-23 MMBT3904LT1 100JJA, 100MHz 10mAdc, 10mAdc 9B SOT23

    Untitled

    Abstract: No abstract text available
    Text: KSC2328A NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS • Complement to KSA928A • Collector Dissipation PC=1 W • 3 Watt Output Application ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Rating Unit VcBO 30 30 5 2 1 150


    OCR Scan     		PDF KSC2328A KSA928A 00S47b7

    SQD65BB75

    Abstract: sqd65B
    Text: TRANSISTOR M O D U L E non -ISOLATED TYPE SQP65BB75 S Q D 6 5B B is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • VCbo= 750V, lc = 65A • Suitable for Resonance circuit applications.


    OCR Scan     		PDF SQP65BB75 SQD65BB75 00DEE22 SQD65BB75 sqd65B