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    TRANSISTOR CODE SP Search Results

    TRANSISTOR CODE SP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CODE SP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8ch pnp DARLINGTON TRANSISTOR ARRAY

    Abstract: pnp DARLINGTON TRANSISTOR ARRAY ULN* PNP transistor array PNP DARLINGTON SINK DRIVER pnp darlington array m54586p pnp darlington array ULN uln2803 to drive 7 segment display ULS2003H nec pa2003c
    Text: [ 1 ] Product Code Index [ 1 ] Product Code Index 1. IFD Family Tree Inter-Face Driver S-Driver Series TD62Sx×× Transistor-Array Series Monolithic Array Series Bipolar Transistor Array TD62××× or ULN/ULQ 2xxx DMOS Transistor Array TB62××× Multi-Chip IC Type MCT array


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    PDF TD62S× TD62M× TD62C× TB62/TD/ULN/ULQ D62598AP TD62601P TD62602P TD62603P TD62604P TD62703P 8ch pnp DARLINGTON TRANSISTOR ARRAY pnp DARLINGTON TRANSISTOR ARRAY ULN* PNP transistor array PNP DARLINGTON SINK DRIVER pnp darlington array m54586p pnp darlington array ULN uln2803 to drive 7 segment display ULS2003H nec pa2003c

    sot-23 npn marking code cr

    Abstract: sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2411 FEATURES Pb z Power dissipation: PCM=200mW Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2411 Marking Package Code


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    PDF 2SC2411 200mW OT-23 BL/SSSTC097 sot-23 npn marking code cr sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04

    transistor marking 3em

    Abstract: transistor marking code SOT-23 TRANSISTOR K 135 J 50 SOT-23 transistor code PB TRANSISTOR K 135 transistor marking code 3EM SOT-23 marking 3EM sot-23 transistor code PB marking code PC sot-23 3em sot-23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High transition frequency. z Power dissipation. PC=350mW MMBTH10 Pb Lead-free APPLICATIONS z VHF/UHF Transistor. SOT-23 ORDERING INFORMATION Type No. Marking Package Code


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    PDF MMBTH10 350mW) OT-23 BL/SSSTC125 transistor marking 3em transistor marking code SOT-23 TRANSISTOR K 135 J 50 SOT-23 transistor code PB TRANSISTOR K 135 transistor marking code 3EM SOT-23 marking 3EM sot-23 transistor code PB marking code PC sot-23 3em sot-23

    BFQ67W

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFQ67W NPN 8 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 8 GHz wideband transistor FEATURES BFQ67W PINNING • High power gain PIN  Low noise figure DESCRIPTION Code: V2


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    PDF BFQ67W OT323 MBC870 OT323 OT323. R77/03/pp12 BFQ67W

    Untitled

    Abstract: No abstract text available
    Text: FJC1386 PNP Epitaxial Silicon Transistor Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 8 6 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


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    PDF FJC1386 FJC2098 OT-89 FJC1386

    FJC1386

    Abstract: FJC2098 SOT89 transistor marking 4A
    Text: FJC1386 PNP Epitaxial Silicon Transistor Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 8 6 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


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    PDF FJC1386 FJC2098 OT-89 FJC1386 FJC2098 SOT89 transistor marking 4A

    PZTA14

    Abstract: f 630 TRANSISTOR transistor f 370 330 transistor transistor 370 370 transistor transistor j 330
    Text: PZTA14 NPN Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The PZTA14 is darlington amplifier transistor designed for applications requiring extremely high current gain. REF. Date Code A C D E I H


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    PDF PZTA14 OT-223 PZTA14 100mA 100mA 100MHz 01-Jun-2002 f 630 TRANSISTOR transistor f 370 330 transistor transistor 370 370 transistor transistor j 330

    BULB128D

    Abstract: BULB128D-1
    Text: BULB128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-1 BULB128D Tube STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS


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    PDF BULB128D-1 BULB128D O-262) BULB128D BULB128D-1

    transistor marking pr 04

    Abstract: BULB128D BULB128D-1
    Text: BULB128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-1 BULB128D Tube STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS


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    PDF BULB128D-1 BULB128D O-262) transistor marking pr 04 BULB128D BULB128D-1

    BULB128D-BT4

    Abstract: transistor bs 140
    Text: BULB128D-BT4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-BT4 BULB128DB Tape & Reel STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS


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    PDF BULB128D-BT4 BULB128DB O-263) BULB128D-BT4 transistor bs 140

    BULB128D-BT4

    Abstract: No abstract text available
    Text: BULB128D-BT4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-BT4 BULB128DB Tape & Reel STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS


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    PDF BULB128D-BT4 BULB128DB O-263) BULB128D-BT4

    transistor marking 4D

    Abstract: PNP 400V MMBTA44 MMBTA94
    Text: MMBTA94 PNP Silicon -400V, -0.1A, 350mW Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High Voltage Transistor A L 3 3 MARKING C B Top View 1 Product Marking Code


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    PDF MMBTA94 -400V, 350mW OT-23 MMBTA44 -50mA -100mA -10mA, -50mA, transistor marking 4D PNP 400V MMBTA44 MMBTA94

    Untitled

    Abstract: No abstract text available
    Text: KSB1121 PNP Epitaxial Planar Silicon Transistor High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity • Fast Switching Speed • Complement to KSD1621 Marking 1 1 2 1 P Y W W SOT-89 1 Weekly code Year code


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    PDF KSB1121 KSD1621 OT-89 KSB1121

    Untitled

    Abstract: No abstract text available
    Text: PZT5672 NPN Transistor Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The PZT5672 is a low frequency transistor. Excellent DC current gain characteristics. REF. A C D E I H 5 6 72 Date Code B C E Millimeter Min.


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    PDF PZT5672 OT-223 PZT5672 100MHz 01-Jun-2002

    BULB128-1

    Abstract: BULB128
    Text: BULB128-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128-1 BULB128 Tube STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR


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    PDF BULB128-1 BULB128 O-262) BULB128-1 BULB128

    2N1671B

    Abstract: No abstract text available
    Text: 2N1671B UNIJUNCTION TRANSISTOR 26.87 Thyristors Unijunction Transistors PN . Page 1 of 1 Enter Your Part # Home Part Number: 2N1671B Online Store 2N1671B Diodes UNIJUNCTION TRANSISTOR Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


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    PDF 2N1671B 2N1671B com/2n1671b

    BULB128-1

    Abstract: No abstract text available
    Text: BULB128-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128-1 BULB128 Tube STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR


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    PDF BULB128-1 BULB128 O-262) BULB128-1

    npn transistor 0.1A 400V sot-23

    Abstract: npn high voltage transistor 500v sot23 vbe 10v, vce 500v NPN Transistor top marking 3d npn NPN VCEO 500V sot23 MMBTA44 3D NPN 400V TRANSISTOR MARKING 3D sot-23 Marking 3D
    Text: MMBTA44 NPN Silicon 500V, 0.1A, 350mW Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High Voltage Transistor A L 3 3 MARKING C B Top View 1 Product Marking Code MMBTA44


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    PDF MMBTA44 350mW OT-23 21-Sep-2010 npn transistor 0.1A 400V sot-23 npn high voltage transistor 500v sot23 vbe 10v, vce 500v NPN Transistor top marking 3d npn NPN VCEO 500V sot23 MMBTA44 3D NPN 400V TRANSISTOR MARKING 3D sot-23 Marking 3D

    SOT89 MARKING CODE B2

    Abstract: SOT89 MARKING CODE S3
    Text: KSD1621 NPN Epitaxial Silicon Transistor High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 6 2 1 P Y W W SOT-89 1 Weekly code Year code


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    PDF KSD1621 KSD1621 KSB1121 OT-89 KSD1621RTF KSD1621STF KSD1621TTF KSD1621UTF SOT89 MARKING CODE B2 SOT89 MARKING CODE S3

    BFR106

    Abstract: MSB003 MBB773
    Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications. PIN DESCRIPTION 3 Code: R7p


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    PDF BFR106 MSB003 BFR106 MSB003 MBB773

    transistor smd zG

    Abstract: npn zg SMD Transistor zG TRANSISTOR 610 smd
    Text: Philips Sem iconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. PIN 4 DESCRIPTION 3 Code: E6 It is intended for use in wideband


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    PDF OT143 BFG17A MSB014 OT143. 711062fci 711062b 7110A2L transistor smd zG npn zg SMD Transistor zG TRANSISTOR 610 smd

    smd transistor fq 30

    Abstract: BFG17A TRANSISTOR 610 smd
    Text: Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. PIN 4 DESCRIPTION 3 Code: E6 It is intended for use in wideband


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    PDF BFG17A OT143 M5B014 OT143. MBB376 711002b smd transistor fq 30 BFG17A TRANSISTOR 610 smd

    Untitled

    Abstract: No abstract text available
    Text: bbSB'lBl 0DES8bl 03b « A P X Philips Semiconductors Product specification PNP 1 GHz switching transistor PMBT3640 N AUER PHILIPS/DISCRETE DESCRIPTION b?E D PINNING P N P general purpose switching transistor in a SO T23 package. PIN DESCRIPTION Code: V25 1


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    PDF PMBT3640

    Untitled

    Abstract: No abstract text available
    Text: 32E D • fi23b32G 0017243 T ISIP S M B T 4124 NPN Silicon Sw itching Transistor -SIEMENS/ SPCL-, SEMICONDS • High current gain: 0.1 to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering code for versions in bulk Ordering code for


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    PDF fi23b32G 23b320 QG17245