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    TRANSISTOR CEY Search Results

    TRANSISTOR CEY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CEY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor C9012

    Abstract: transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram transistor c9014 c9015 transistor c9018 transistor transistor C9015
    Text: APPLICATION NOTE The GTV1000 Global TV Receiver AN98051 Quvyvƒ†ÃTr€ vp‚qˆp‡‚…† The GTV1000 Global TV Receiver Application Note AN98051 Abstract The GTV1000 receiver has been designed around the TDA884X TV signal processor. The large signal part is suited for 90° picture tubes and build on one board with the small signal part.


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    PDF GTV1000 AN98051 GTV1000 TDA884X C9029 220uF C6004 transistor C9012 transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram transistor c9014 c9015 transistor c9018 transistor transistor C9015

    A1000-REV00k9040-IE

    Abstract: AX-REM01K9050-IE A1000-REV00k6050-IE a1000-fia3071-re A1000FIA3105RE A1000-FIV3005-RE AX-FIM1024-RE
    Text: Listino prezzi Validità 1° GENNAIO 2014 industrial.omron.it /67/238731'</32+ +22'/3  ";CI?A;A?;CI;, ? ? :;:?97I?7AH;IIDG;;A;IIGDC?9D G;AE;G9?G9J?IDHI7BE7ID B?9GD?CI;GGJIIDG? ;99


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    CEY 3-PIN

    Abstract: mark cey transistor cey marking code sot-26 3.3v
    Text: UNISONIC TECHNOLOGIES CO., LTD LR3XXYYB CMOS IC 150mA 2CH LDO REGULATOR „ DESCRIPTION The UTC LR3XXYYB are CMOS voltage regulator ICs that have high output voltage accuracy, low dropout, low supply current, and high ripple rejection. Every voltage regulator IC of


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    PDF 150mA QW-R125-002 CEY 3-PIN mark cey transistor cey marking code sot-26 3.3v

    ofdm transmitter

    Abstract: CGH40010 CGH40010 ads GaN limiter GaN PA microwave transmitter circuit diagram GaN ADS Cree Microwave digital Pre-distortion nielsen
    Text: A GaN HEMT Power Amplifier with Variable Gate Bias for Envelope and Phase Signals Ellie Cijvat1 , Kevin Tom2 , Mike Faulkner2 and Henrik Sjöland1 1 2 Dept. of Electrical and Information Technology, Lund University, Sweden P.O. Box 118, SE-221 00 Lund, Sweden


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    PDF SE-221 CGH40010 com/products/pdf/CGH40010-Rev1 ofdm transmitter CGH40010 ads GaN limiter GaN PA microwave transmitter circuit diagram GaN ADS Cree Microwave digital Pre-distortion nielsen

    Untitled

    Abstract: No abstract text available
    Text: Introducing Trinket Created by lady ada Last updated on 2014-05-05 04:30:53 PM EDT Guide Contents Guide Contents 2 Introduction 4 Guided Tour 6 Pinouts 8 Power Pins 10 GPIO Pins 11 Reset and Regulator Output 12 Starting the Bootloader 13 About the bootloader


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    PDF ATtiny85

    T86 MSOP

    Abstract: AD7476A AD7477A AD7478A TMS320C541 AD7476AAKSZ-500RL7
    Text: 2.35 V to 5.25 V, 1 MSPS, 12-/10-/8-Bit ADCs in 6-Lead SC70 AD7476A/AD7477A/AD7478A FEATURES FUNCTIONAL BLOCK DIAGRAM Fast throughput rate: 1 MSPS Specified for VDD of 2.35 V to 5.25 V Low power 3.6 mW at 1 MSPS with 3 V supplies 12.5 mW at 1 MSPS with 5 V supplies


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    PDF 12-/10-/8-Bit AD7476A/AD7477A/AD7478A 12-/10-/8-BIT D02930-0-1/11 T86 MSOP AD7476A AD7477A AD7478A TMS320C541 AD7476AAKSZ-500RL7

    AD7476A

    Abstract: AD7476AAKS-500RL7 AD7476AAKS-REEL AD7477A AD7478A DB10 7071D
    Text: a 2.35 V to 5.25 V, 1 MSPS, 12-/10-/8-Bit ADCs in 6-Lead SC70 AD7476A/AD7477A/AD7478A* FEATURES Fast Throughput Rate: 1 MSPS Specified for VDD of 2.35 V to 5.25 V Low Power: 3.6 mW Typ at 1 MSPS with 3 V Supplies 12.5 mW Typ at 1 MSPS with 5 V Supplies Wide Input Bandwidth:


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    PDF 12-/10-/8-Bit AD7476A/AD7477A/AD7478A* 12-/10-/8-BIT AD7476A/AD7477A/AD7478A AD7476A/AD7477A/AD7478A DSP563xx C02930 AD7476A AD7476AAKS-500RL7 AD7476AAKS-REEL AD7477A AD7478A DB10 7071D

    MSOP-8 2fb 1

    Abstract: AD7476AAKSZ-500RL7 AD7476A AD7477A AD7478A TMS320C541 ad8478
    Text: 2.35 V to 5.25 V, 1 MSPS, 12-/10-/8-Bit ADCs in 6-Lead SC70 AD7476A/AD7477A/AD7478A FEATURES FUNCTIONAL BLOCK DIAGRAM Fast throughput rate: 1 MSPS Specified for VDD of 2.35 V to 5.25 V Low power 3.6 mW at 1 MSPS with 3 V supplies 12.5 mW at 1 MSPS with 5 V supplies


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    PDF 12-/10-/8-Bit AD7476A/AD7477A/AD7478A 12-/10-/8-BIT EVAL-AD7476ACB, D02930-0-2/09 MSOP-8 2fb 1 AD7476AAKSZ-500RL7 AD7476A AD7477A AD7478A TMS320C541 ad8478

    Untitled

    Abstract: No abstract text available
    Text: 2.35 V to 5.25 V, 1 MSPS, 12-/10-/8-Bit ADCs in 6-Lead SC70 AD7476A/AD7477A/AD7478A FEATURES FUNCTIONAL BLOCK DIAGRAM Fast throughput rate: 1 MSPS Specified for VDD of 2.35 V to 5.25 V Low power 3.6 mW at 1 MSPS with 3 V supplies 12.5 mW at 1 MSPS with 5 V supplies


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    PDF 12-/10-/8-Bit AD7476A/AD7477A/AD7478A 12-/10-/8-BIT D02930-0-1/11

    Untitled

    Abstract: No abstract text available
    Text: 2.35 V to 5.25 V, 1 MSPS, 12-/10-/8-Bit ADCs in 6-Lead SC70 AD7476A/AD7477A/AD7478A FUNCTIONAL BLOCK DIAGRAM FEATURES Fast throughput rate: 1 MSPS Specified for VDD of 2.35 V to 5.25 V Low power 3.6 mW at 1 MSPS with 3 V supplies 12.5 mW at 1 MSPS with 5 V supplies


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    PDF 12-/10-/8-Bit AD7476A/AD7477A/AD7478A 12-/10-/8-BIT D02930-0-1/11

    BF 182 transistor

    Abstract: transistor 182 marking code M21
    Text: SIEMENS BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2cfB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


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    PDF 900MHz OT-143 Q62702-F1396 BF 182 transistor transistor 182 marking code M21

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5


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    PDF O-5/TO-39 5-10A 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418 2N3419 2N3420

    transistor cey npn

    Abstract: BFX62 LC 7621 transistor cey
    Text: B F X 62 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN SILIC IU M . PLAN A R E P ITAXIAL Input stages w ith forward automatic gain Self oscillating mixers up to 1 GHz 20 V v CEO Etages d'entrée à commande automatique de gain


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    S-8324AXXM

    Abstract: HA2010
    Text: Contents Features. 1 A Block D iagram . 1 Selection G u id e .2


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    PDF S-8324/8328 S-8324AXXM HA2010

    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    BUV41

    Abstract: No abstract text available
    Text: • 7^53537 0056751 7 ■ S C ô « ^ S - T o H m O M [ l O T S O "T-33r^3t._ N ( s [ * S B S G S-THOMSON F A S T U V 4 1 30E T> S W IT C H IN G P O W E R T R A N S IS T O R ■ FAST SW ITCHING TIM ES . LOW SWITCHING LOSSES ■ VER Y LOW SATURATION VOLTAGE AND


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    PDF T-33r BUV41

    IC 7448

    Abstract: 2N6477 transistor A05 transistors with beta value of 140 2N6478 2N5298 2N6478A TA8405 92CS-22442 of ic 7448
    Text: Q1 3875081 Q E SOLID D É T l3 ñ 7 5 0 ñ l STATE 01E 0Q 17445 17445 T D T - ?7 V/ G e n e ra i-P u rp o a a Power Transistors 2N6477, 2N6478 File Number 6 8 0 TERMINAL DESIGNATIONS Medium-Power •Silicon N-P-N Transistors For Intermediate Power Applications


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    PDF 0D17M4S 2N6477, 2N6478 2N6477 2N6478A 2N5298 r-33-u 2N6478. IC 7448 transistor A05 transistors with beta value of 140 2N6478 TA8405 92CS-22442 of ic 7448

    Untitled

    Abstract: No abstract text available
    Text: VITELIC V63C64 H IG H PE R FO R M A N C E , L O W PO W ER 8 K x 8 B IT C M O S S TA T IC R A M Features Description • High speed • Maximum access times of 25, 30, 35, 45, and 55 ns ■ Equal access and cycle times ■ Fully static operation • No clock or refresh required


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    PDF V63C64 V63C64 8192-word

    marking L0KA

    Abstract: LP2985AIM5-5.0* LOUA LOUA sot23 LOra sot23 Lp2985im5-3.3 LORB marking loub
    Text: tß Semiconductor LP2985 Micropower SOT, 150 mA Low-Noise Ultra Low-Dropout Regulator Designed for Use with Very Low ESR Output Capacitors General Description Features The LP2985 is a 150 mA, 1ixed-output voltage regulator de­ signed to provide ultra low-dropout and low noise in battery


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    PDF LP2985 marking L0KA LP2985AIM5-5.0* LOUA LOUA sot23 LOra sot23 Lp2985im5-3.3 LORB marking loub

    MA1002 digital LED Clock Module

    Abstract: MA1002 Robinson Nugent CATALOG NSB7881 equivalent transistor P347 t110 94v 0 MEPCO 5043 LN543RA m7104 Lm13800
    Text: D ID I-K E Y l r C O R P TOLL FREE W ATS LINE O R A T I O N Telephone Order Entry Now Available Until 7:00 P.M. Central Time I 1- 800- 344-4539 91 E A S Y TO R E M E M B E R : 1-800-DIGI-KEY A K , HI: 218-681 66741 Catalog No. 851 1Jan.-Fab., 11 HIGHWAY 32 SOUTH


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    PDF 1-800-DIGI-KEY 1-800-DIGI-KEY) MA1002 digital LED Clock Module MA1002 Robinson Nugent CATALOG NSB7881 equivalent transistor P347 t110 94v 0 MEPCO 5043 LN543RA m7104 Lm13800

    orcad

    Abstract: No abstract text available
    Text: ACT 1 Series FPGAs Features • 5V and 3.3V Families fully compatible with JEDEC specifications A security fuse may be programmed to disable all further programming and to protect the design from being copied or reverse engineered. • Up to 2000 Gate Array Gates 6000 PLD equivalent gates


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    PDF 20-Pin A1020B orcad

    CS27B

    Abstract: MTI GE relay CS-27B CHC12A NAA22L PJC31C JBCG53K BCA11AV CLPG12C GCX51
    Text: INSTRUCTIONS Directional Comparison Carrier-Current Pilot Relaying With MHO-Type Distance Relays G E N E R A L E L E C T R IC GEK-7384 Contents Introduction . 3


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    PDF GEK-7384 CS-27B. 16SB1CB4B21 0116B9495-3) CS27B MTI GE relay CS-27B CHC12A NAA22L PJC31C JBCG53K BCA11AV CLPG12C GCX51

    172CQFP

    Abstract: A1225 A1225A A1240 A1240A A1280 A1280A actel a1280a unused pin SV50T actel a1240
    Text: ém cM ACT“ 2 Family FPGAs Features • Up to 8000 Gate Array Gates 20,000 PLD equivalent gates Datapath Performance at 105 MHz • Replaces up to 200 TTL Packages • Replaces up to eighty 20-Pin PAL Packages Two In-Circuit Diagnostic Probe Pins Support Speed


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    PDF 20-Pin 16-Bit A1225A A1240A A1280A 172CQFP A1225 A1240 A1280 actel a1280a unused pin SV50T actel a1240

    MXT 276

    Abstract: No abstract text available
    Text: Æ te lê l ACT" 3 3.3 Volt Field Programmable Gate Arrays • Features • 3.3V Functionality fully compliant with JEDEC specifications • Highly Predictable Performance with 100% Automatic Placement and Routing • 13 ns Clock-to-Output Times • Up to 100 MHz On-Chip Performance


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    PDF 20-Pin MXT 276