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    TRANSISTOR CEP02N6 Search Results

    TRANSISTOR CEP02N6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CEP02N6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CEP02N6

    Abstract: CEB02N6 transistor cep02n6
    Text: CEP02N6/CEB02N6 Sep. 2002 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 2A , RDS ON =5Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.


    Original     		PDF CEP02N6/CEB02N6 O-220 O-263 CEP02N6 CEB02N6 transistor cep02n6

    CEB02N6G

    Abstract: CEF02N6 CEF02N6G
    Text: CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS CEP02N6G 600V RDS ON 5Ω 2.2A ID @VGS 10V CEB02N6G 600V 5Ω 2.2A 10V CEF02N6G 600V 5Ω 2.2A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP02N6G/CEB02N6G CEF02N6G CEP02N6G CEB02N6G O-263 O-220 O-220F O-220/263 CEB02N6G CEF02N6 CEF02N6G

    CEF02N6G

    Abstract: CEB02N6G
    Text: CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6G 600V 5.5Ω 2A 10V CEB02N6G 600V 5.5Ω 2A 10V CEF02N6G 600V 5.5Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP02N6G/CEB02N6G CEF02N6G CEP02N6G CEB02N6G O-263 O-220 O-220F O-220/263 100ms CEF02N6G CEB02N6G

    cef02n6a

    Abstract: CEP02N6A CEF02N6A equivalent CEB02N6A 56d41 CEP02N6 CEF02N6 56D4-1
    Text: CEP02N6A/CEB02N6A CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON CEP02N6A 600V 8.5Ω 1.4A ID @VGS 10V CEB02N6A 600V 8.5Ω 1.4A 10V CEF02N6A 600V 8.5Ω 1.4A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP02N6A/CEB02N6A CEF02N6A CEP02N6A CEB02N6A O-263 O-220 O-220F O-220/263 100ms cef02n6a CEP02N6A CEF02N6A equivalent CEB02N6A 56d41 CEP02N6 CEF02N6 56D4-1

    CEF02N65D

    Abstract: CEF02N65 cef*02n65d CEP02N65D CEP02N6 CEF02N6 CEB02N65D CEB02N6 692AD CEP02
    Text: CEP02N65D/CEB02N65D CEF02N65D PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N65D 650V 6.9Ω 2A 10V CEB02N65D 650V 6.9Ω 2A 10V CEF02N65D 650V 6.9Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP02N65D/CEB02N65D CEF02N65D CEP02N65D CEB02N65D O-263 O-220 O-220F O-220/263 CEF02N65D CEF02N65 cef*02n65d CEP02N65D CEP02N6 CEF02N6 CEB02N65D CEB02N6 692AD CEP02

    CEF02N6

    Abstract: transistor cep02n6 CEP02N6 CEB02N6 CEI02N6
    Text: CEP02N6/CEB02N6 CEI02N6/CEF02N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6 600V 5Ω 2A 10V CEB02N6 600V 5Ω 2A 10V CEI02N6 600V 5Ω 2A 10V CEF02N6 600V 5Ω 2A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP02N6/CEB02N6 CEI02N6/CEF02N6 CEP02N6 CEB02N6 CEI02N6 CEF02N6 O-220 O-263 O-262 O-220F CEF02N6 transistor cep02n6 CEP02N6 CEB02N6 CEI02N6

    CEF02N6A

    Abstract: CEF02N6A equivalent CEP02N6 CEF02N6 CEP02N6A CEB02N6A CEI02N6A
    Text: CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6A 650V 7.5Ω 1.5A 10V CEB02N6A 650V 7.5Ω 1.5A 10V CEI02N6A 650V 7.5Ω 1.5A 10V CEF02N6A 650V 7.5Ω 1.5A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A CEP02N6A CEB02N6A CEI02N6A CEF02N6A O-220 O-263 O-262 O-220F CEF02N6A CEF02N6A equivalent CEP02N6 CEF02N6 CEP02N6A CEB02N6A CEI02N6A

    CEP02N6

    Abstract: CEF02N6 transistor cep02n6 CEB02N6 CEI02N6
    Text: CEP02N6/CEB02N6 CEI02N6/CEF02N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6 600V 5Ω 2A 10V CEB02N6 600V 5Ω 2A 10V CEI02N6 600V 5Ω 2A 10V CEF02N6 600V 5Ω 2A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP02N6/CEB02N6 CEI02N6/CEF02N6 CEP02N6 CEB02N6 CEI02N6 CEF02N6 O-220 O-263 O-262 O-220F CEP02N6 CEF02N6 transistor cep02n6 CEB02N6 CEI02N6