TRANSISTOR CB550 Search Results

TRANSISTOR CB550 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR CB550 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
8mm pitch BGA 256 pin 14x14 Abstract: CB45000 CB55000 D950 ST10 ST100 ST20 CMOS GATE ARRAY BGA stmicroelectronics of BGA Staggered pins bga 10x10 Text: CB55000 Series HCMOS7 Standard Cells FEATURE • 0.25 micron drawn 0.20 micron effective channel length process , six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV	Original	CB55000 8mm pitch BGA 256 pin 14x14 CB45000 D950 ST10 ST100 ST20 CMOS GATE ARRAY BGA stmicroelectronics of BGA Staggered pins bga 10x10	PDF
b55qs Abstract: CB45000 ultra fine pitch BGA CB55Q CB55000 D950 ST10 ST100 ST20 CMOS GATE ARRAY BGA stmicroelectronics Text: CB55000 Series HCMOS7 Standard Cells FEATURE • 0.25 micron drawn 0.20 micron effective channel length process , six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV	Original	CB55000 b55qs CB45000 ultra fine pitch BGA CB55Q D950 ST10 ST100 ST20 CMOS GATE ARRAY BGA stmicroelectronics	PDF
0.25-um CMOS standard cell library inverter Abstract: CMOS GATE ARRAY stmicroelectronics OLIVETTI Text: CB55000 Series HCMOS7 Standard Cells FEATURES • ■ ■ ■ ■ ■ 0.25 micron drawn 0.20 micron effective channel length process , six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided	Original	CB55000 0.25-um CMOS standard cell library inverter CMOS GATE ARRAY stmicroelectronics OLIVETTI	PDF
0.18-um CMOS technology characteristics Abstract: CB55000 CB65000 D950 ST10 ST100 ST20 CMOS GATE ARRAY stmicroelectronics 12v na 19.5v 0.18-um CMOS technology characteristics 1.2V Text: CB65000 Series HCMOS8D 0.18µm Standard Cells Family FEATURE • 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography. ■ 1.8 V optimized High Performance and Low	Original	CB65000 85K/mm 30nanoWatt/Gate/MHz/ 0.18-um CMOS technology characteristics CB55000 D950 ST10 ST100 ST20 CMOS GATE ARRAY stmicroelectronics 12v na 19.5v 0.18-um CMOS technology characteristics 1.2V	PDF
CB55000 Abstract: CB65000 D950 ST10 ST100 ST20 12v na 19.5v 0.18-um CMOS technology characteristics horizontal output section 0.18Um Standard cell ST Text: CB65000 Series HCMOS8D 0.18µm Standard Cells Family FEATURE • 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography. ■ 1.8 V optimized High Performance and Low	Original	CB65000 85K/mm 30nanoWatt/Gate/MHz/ CB55000 D950 ST10 ST100 ST20 12v na 19.5v 0.18-um CMOS technology characteristics horizontal output section 0.18Um Standard cell ST	PDF
ST100 Abstract: CB55000 CB65000 D950 ST10 ST20 tristate nand gate Text: CB65000 Series HCMOS8D Standard Cells Family FEATURES • ■ ■ ■ ■ ■ 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography.	Original	CB65000 85K/mm2, 30nanoWatt/Gate/MHz/Stdload. ST100 CB55000 D950 ST10 ST20 tristate nand gate	PDF
24c02 wp Abstract: transistor CB550 nForce4 G781-1P8F intel DG 31 crb c3421 transistor intel dg 41 crb nvidia ck804 nForce4 sli c3751 transistor Text: 5 4 GPU on Normal Mode conduct MXM on master slot only,link to PCIE x16 lanes . PAGE INDEX: 01_BLOCK_DIAGRAM 02_CLOCK_BLOCK_DIAGRAM GPU SLAVE 09_CK804 1/7 _HT/CPU_IF 10_CK804(2/7)_PCIE 11_CK804(3/7)_PCI/LPC 12_CK804(4/7)_SATA/PATA/XTAL-IN 13_CK804(5/7)_USB/MAC/AC97/RTC/SMB	Original	26pins CK804 USB/MAC/AC97/RTC/SMB 8LANESdsn0403 2200P. 24c02 wp transistor CB550 nForce4 G781-1P8F intel DG 31 crb c3421 transistor intel dg 41 crb nvidia ck804 nForce4 sli c3751 transistor	PDF