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    TRANSISTOR CB 337 Search Results

    TRANSISTOR CB 337 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CB 337 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LM4817 www.ti.com LM4817 SNAS226C – MAY 2004 – REVISED FEBRUARY 2006 1W Stereo Audio Amplifier Plus Adjustable Output Limiter Plus Adjustable LDO Check for Samples: LM4817 FEATURES 1 • • • • • 2 • Stereo BTL amplifier Adjustable output voltage magnitude limiter


    Original     		PDF LM4817 SNAS226C LM4817

    VSSOP8 LDO

    Abstract: No abstract text available
    Text: LM4817 www.ti.com LM4817 SNAS226C – MAY 2004 – REVISED FEBRUARY 2006 1W Stereo Audio Amplifier Plus Adjustable Output Limiter Plus Adjustable LDO Check for Samples: LM4817 FEATURES DESCRIPTION • • • • • The LM4817 combines a bridge-connected BTL


    Original     		PDF LM4817 SNAS226C LM4817 VSSOP8 LDO

    639 TRANSISTOR PNP

    Abstract: transistor ESM 692 NPN 337 esm 2907 pnp transistor npn 2222 transistor transistor C 548 B BC516 E C B BC 635 TRANSISTOR BC 557 PNP TRANSISTOR transistor bf 422 NPN
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PNP NPN CB-1% PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 CB-76 639 TRANSISTOR PNP transistor ESM 692 NPN 337 esm 2907 pnp transistor npn 2222 transistor transistor C 548 B BC516 E C B BC 635 TRANSISTOR BC 557 PNP TRANSISTOR transistor bf 422 NPN

    BF298

    Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457
    Text: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 BF298 BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457

    transistor Bc 540

    Abstract: TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -c s f Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 CB-76 transistor Bc 540 TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635

    TRANSISTOR BC 213

    Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 CB-76 TRANSISTOR BC 213 TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor

    transistor BC 310

    Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 CB-76 BC317P. transistor BC 310 transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor

    transistor bf 422 NPN

    Abstract: transistors BC 548 BC 558 transistor BC 338 BC 2222 BC 557 npn transistor bf 422 BC 547 pnp transistor 2N 5551 TRANSISTOR 642 npn 2222 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 transistor bf 422 NPN transistors BC 548 BC 558 transistor BC 338 BC 2222 BC 557 npn transistor bf 422 BC 547 pnp transistor 2N 5551 TRANSISTOR 642 npn 2222 transistor

    transistor Bc 540

    Abstract: transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 transistor Bc 540 transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310

    transistor bc 488

    Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
    Text: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 BC317P. transistor bc 488 transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B

    Mitsubishi databook

    Abstract: Mitsubishi transistor databook transistor 2sc3379 2SC3379 T-46 transistor npn Epitaxial Silicon zs 35
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC 3379 NPN E P IT A X IA L PLANAR TY PE DESCRIPTION OUTLINE DRAWING D im e n s io n s in m m 2 S C 3 3 7 9 is a silicon NPN epitaxial planar typ e transisto r sp e cifi­ cally designed fo r UHF pow er am plifier applications.


    OCR Scan     		PDF 2SC3379 Mitsubishi databook Mitsubishi transistor databook transistor 2sc3379 2SC3379 T-46 transistor npn Epitaxial Silicon zs 35

    bc337

    Abstract: bc338 TRANSISTOR bc337 40 TRANSISTOR BC338 BC338 TRANSISTOR TRANSISTOR BC337-40 BC33840
    Text: MCC TO-92 Plastic-Encapsulate Transistors ^ BC337 BC338 ,-16,-25,-40 TRANSISTOR(NPN) FEATURES Pcm: 0.625W (Tamb=25°C) Icm: 0 .8 A ÍIIÍÍÉ>ji^fe>ba»a voltage Vcbo: BC 337 : 50V B C 338 : 30V storage junction temperature range Tj,Tstg: -55'C to + 150°C


    OCR Scan     		PDF BC337 BC338) BC338 TRANSISTOR bc337 40 TRANSISTOR BC338 BC338 TRANSISTOR TRANSISTOR BC337-40 BC33840

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b^E D • APX bbSBTBl 0026*175 263 A b L V iJ ^ I- V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear v.h.f. amplifiers of television transmitters and transposers. Features:


    OCR Scan     		PDF BLV32F

    BD331

    Abstract: BD335 TRANSISTOR BD338
    Text: BD331; 333 BD335; 337 _ SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; plastic SOT-82 envelope for clip mounting; can also be soldered


    OCR Scan     		PDF BD331; BD335; OT-82 BD332, BD334, BD336 BD338. BD331 BD331 BD335 TRANSISTOR BD338

    Untitled

    Abstract: No abstract text available
    Text: SM-8 COMPLEMENTARY M EDIU M POWER TRANSISTORS ZDT6757 ISSUE 1 - NOVEMBER 1995 - ABSOLUTE M A X IM U M RATINGS. PARAM ETER SY M B O L NPN PNP Collector-Base Voltage VCBO 300 -300 V Collector-Emitter Voltage V CEO 300 -300 V Emitter-Base Voltage


    OCR Scan     		PDF ZDT6757 -100mA, lc--100mA, 100mA, -10mA, 20MHz FZT757

    smd npn 2n2222

    Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
    Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.


    OCR Scan     		PDF 2PC1815L 2PC1815 10xx0. 7Z88986 smd npn 2n2222 bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200

    T6718

    Abstract: No abstract text available
    Text: SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ZDT6 7 1 8 ISSUE 1 - NOVEMBER 1995 Cl c, LL. rr~ rr c 2 l _l c? - zo ~n II II Bi NPN Ei Bz Eî PNP PARTMARKING DETAIL - T6718 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SYM BO L Collector-Base Voltage


    OCR Scan     		PDF T6718 -50mA* -10mA, -100mA, -50mA, 100MHz 300ns. FMMT718 T6718

    FT5778M

    Abstract: No abstract text available
    Text: January 1990 Edition 1.1 FTS778M FUJITSU PRODUCT PROFILE Silicon Darlington Transistor Array A B SO LU T E M A X IM U M R A T IN G S Ta = 25°C Rating Symbol Storage Temperature Junction Temperature Collector to Base Voltage Em itter to Base Voltage Collector to Em itter Voltage


    OCR Scan     		PDF FTS778M FT5778M FT5778M

    Untitled

    Abstract: No abstract text available
    Text: Af1ER P H IL IP s T dT s CRETE DbTT DEVELOPMENT DA I A • t.tS 3131 O D lsn s fe> ■ This data sheet contains advance information and specifications are subject to change without notice. _ y RX2731B90W T - 3 3 - ’ iS ' PULSED M ICRO W AVE POWER TRANSISTOR


    OCR Scan     		PDF RX2731B90W ensuring32>

    BFX59

    Abstract: transistor BFX59 transistor BC 336 kbr 1000 Transistor BFX 59
    Text: BFX59 NPN Transistor for low-power driver and output stages in antenna amplifiers BFX 59 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41 876 TO-72 . The leads are electrically insulated from the case. BFX 59 is suitable for use in low -pow er amplifier, driver and power stages at frequencies up to the UHF range.


    OCR Scan     		PDF BFX59 Q60206-X59 BFX59 transistor BFX59 transistor BC 336 kbr 1000 Transistor BFX 59

    transistor BF 199

    Abstract: BF 199 bf199 transistor A11A
    Text: SIEM ENS BF 199 NPN Silicon RF Transistor • For common emitter IF TV amplifier stages • Low feedback capacitance due to shield diffusion Type Marking Ordering Code BF 199 - Q62702-F355 Pin Configuration 1 2 3 C E Package1 TO-92 B Maximum Ratings Parameter


    OCR Scan     		PDF Q62702-F355 D0bb74b 23SbGS DDbb747 00bb74fl transistor BF 199 BF 199 bf199 transistor A11A

    Untitled

    Abstract: No abstract text available
    Text: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6705 ISSUE 1 - NOVEMBER 1995 - C i L . l _ U Bi C i c Z D ei c 2 r c 2 c m r m b2 Z E H 1 N P N 1 E? PNP PARTMARKING DETAIL- T6705 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage


    OCR Scan     		PDF ZDT6705 T6705 -100mA, 20MHz -10mA, 300ns. ZDT705 Tc17G57fl

    2N3375

    Abstract: Transistor 2n3375 2n5708 transistor 3866 s 2N3927 2n4440 texas rf power transistor 2n RF transistor TO128 PACKAGE 2N5690
    Text: 2N3375 SILICON NPN VHF POWER TRANSISTOR Distributed Wafer Interdigital Construction Integrated Diffused Em itter Ballast mechanical data All d im e n s io n s a re in m m TO-60 * absolute maximum ratings at 25 ° C case temperature unless otherwise noted


    OCR Scan     		PDF 2N3375 10/32-NF-2A-Thread O-117 O-128 O-131 O-129 2N3375 Transistor 2n3375 2n5708 transistor 3866 s 2N3927 2n4440 texas rf power transistor 2n RF transistor TO128 PACKAGE 2N5690

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


    OCR Scan     		PDF