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    TRANSISTOR C5706 3A Search Results

    TRANSISTOR C5706 3A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C5706 3A Datasheets Context Search

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    c5706

    Abstract: Transistor C5706 c5706 transistor c5706 1a c5706 equivalent transistor c5706 equivalent Transistor C5706 3a BTC5706A3 C5706 3a C5706 I
    Text: CYStech Electronics Corp. Spec. No. : C819A3 Issued Date : 2006.06.06 Revised Date : Page No. : 1/ 5 Low Vcesat NPN Epitaxial Planar Transistor BTC5706A3 Features • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation


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    C819A3 BTC5706A3 UL94V-0 c5706 Transistor C5706 c5706 transistor c5706 1a c5706 equivalent transistor c5706 equivalent Transistor C5706 3a BTC5706A3 C5706 3a C5706 I PDF