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    TRANSISTOR C556B Search Results

    TRANSISTOR C556B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C556B Datasheets Context Search

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    transistor c557

    Abstract: C557C C556B c557 transistor C556B ph C556A C557B c556 transistor philips c557c C556 ph
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 27 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557 FEATURES PINNING • Low curren t max. 100 mA


    OCR Scan     		PDF BC556; BC557 BC547. 115002/00/03/pp8 transistor c557 C557C C556B c557 transistor C556B ph C556A C557B c556 transistor philips c557c C556 ph