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    TRANSISTOR C54 Search Results

    TRANSISTOR C54 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C54 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor c540

    Abstract: C540 CMPT5401E CMPT5551E
    Text: Central CMPT5401E TM Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5401E is an PNP Silicon Transistor, packaged in an SOT-23 case, designed for general purpose amplifier applications requiring high breakdown


    Original     		CMPT5401E OT-23 150mV CMPT5551E 150mA 100MHz transistor c540 C540 CMPT5401E CMPT5551E PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5401E is an PNP Silicon Transistor, packaged in an SOT-23 case, designed for general purpose amplifier applications


    Original     		CMPT5401E CMPT5401E OT-23 150mV CMPT5551E 100MHz PDF

    transistor c540

    Abstract: c540
    Text: CMPT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5401E is an PNP Silicon Transistor, packaged in an SOT-23 case, designed for general purpose amplifier applications


    Original     		CMPT5401E OT-23 150mV CMPT5551E 150mA 100MHz transistor c540 c540 PDF

    74h32

    Abstract: MC3021 MC3051 MC3023 MC3151 C3109 MC3029 MC3060 MC3025 MC3001
    Text: em o, öö INTEGRATED CIRCUITS FROM MOTOROLA D f f liT f H DDD MC3000 Series 0 to +75°C /M C 74H 00 MC3100 Series ( - 5 5 to +125°C )/M C 54H 00 IS S U E A M T T L III integrated circuits comprise a family of transistor­ transistor logic designed for general purpose digital applications.


    OCR Scan     		MC3000 /MC74H00 MC3100 /MC54H00 MC3052/MC3152 74h32 MC3021 MC3051 MC3023 MC3151 C3109 MC3029 MC3060 MC3025 MC3001 PDF

    c5458

    Abstract: 2SC5458 OF TRANSISTOR c5458
    Text: 2SC5458 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 Industrial Applications Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Inverter Applications • Excellent switching times: tr = 0.5 µs max


    Original     		2SC5458 c5458 2SC5458 OF TRANSISTOR c5458 PDF

    2SC5458

    Abstract: C5458
    Text: 2SC5458 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 Industrial Applications Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Inverter Applications • Excellent switching times: tr = 0.5 µs max


    Original     		2SC5458 2SC5458 C5458 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5466 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5466 Dynamic Focus Applications High Voltage Switching Applications Unit: mm High Voltage Amplifier Applications • High voltage: VCEO = 800 V Maximum Ratings Tc = 25°C Characteristics Symbol


    Original     		2SC5466 SC-67 2-10are PDF

    2SC5458

    Abstract: C5458
    Text: 2SC5458 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications DC-AC Inverter Applications • Excellent switching times: tr = 0.5 µs max •


    Original     		2SC5458 2SC5458 C5458 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5466 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5466 Dynamic Focus Applications High Voltage Switching Applications Unit: mm High Voltage Amplifier Applications • High voltage: VCEO = 800 V Absolute Maximum Ratings Tc = 25°C Characteristics


    Original     		2SC5466 SC-67 2-10R1A PDF

    2SC5460

    Abstract: C5460
    Text: 2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications Unit: mm High-Voltage Amplifier Applications • High breakdown voltage: VCEO = 800 V Maximum Ratings Tc = 25°C Characteristics


    Original     		2SC5460 2SC5460 C5460 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications Unit: mm High-Voltage Amplifier Applications • High breakdown voltage: VCEO = 800 V Maximum Ratings Tc = 25°C Characteristics


    Original     		2SC5460 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5458 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications DC-AC Inverter Applications • Excellent switching times: tr = 0.5 µs max •


    Original     		2SC5458 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5458 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications DC-AC Inverter Applications • Excellent switching times: tr = 0.5 µs max •


    Original     		2SC5458 PDF

    2SC5466

    Abstract: C5466
    Text: 2SC5466 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5466 Dynamic Focus Applications High Voltage Switching Applications Unit: mm High Voltage Amplifier Applications • High voltage: VCEO = 800 V Maximum Ratings Tc = 25°C Characteristics Symbol


    Original     		2SC5466 SC-67 2-10R1A 2SC5466 C5466 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications Unit: mm High-Voltage Amplifier Applications • High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings Tc = 25°C Characteristics


    Original     		2SC5460 PDF

    2SC5460

    Abstract: C5460 TRANSISTOR
    Text: 2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications • Unit: mm High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings Tc = 25°C Characteristics


    Original     		2SC5460 2SC5460 C5460 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5458 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 Industrial Applications Switching Regulator and High Voltage Switching Applications Unit: mm DC-DC Converter Applications DC-AC Inverter Applications • Excellent switching times: tr = 0.5 µs max


    Original     		2SC5458 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5458 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 Industrial Applications Switching Regulator and High Voltage Switching Applications Unit: mm DC-DC Converter Applications DC-AC Inverter Applications • Excellent switching times: tr = 0.5 µs max


    Original     		2SC5458 PDF

    2SC5460

    Abstract: C5460
    Text: 2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications • Unit: mm High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings Ta = 25°C Characteristics


    Original     		2SC5460 2SC5460 C5460 PDF

    c5439

    Abstract: 2SC5439
    Text: 2SC5439 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5439 Switching Regulator Applications High-Voltage Switching Applications Unit: mm DC-DC Converter Applications Inverter Lighting Applications • Excellent switching times: tr = 0.2 µs typ. , tf = 0.15 µs (typ.)


    Original     		2SC5439 c5439 2SC5439 PDF

    C5439

    Abstract: 2SC5439
    Text: 2SC5439 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5439 Switching Regulator Applications High-Voltage Switching Applications DC-DC Converter Applications Inverter Lighting Applications Unit: mm • Excellent switching times: tr = 0.2 s typ. , tf = 0.15 μs (typ.)


    Original     		2SC5439 C5439 2SC5439 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5439 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5439 Switching Regulator Applications High-Voltage Switching Applications Unit: mm DC-DC Converter Applications Inverter Lighting Applications • Excellent switching times: tr = 0.2 µs typ. , tf = 0.15 µs (typ.)


    Original     		2SC5439 SC-67 2-10R1HIBA PDF

    2SC5439

    Abstract: C5439
    Text: 2SC5439 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5439 Switching Regulator Applications High-Voltage Switching Applications DC-DC Converter Applications Inverter Lighting Applications Unit: mm • Excellent switching times: tr = 0.2 s typ. , tf = 0.15 μs (typ.)


    Original     		2SC5439 2SC5439 C5439 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5439 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5439 Switching Regulator Applications High-Voltage Switching Applications Unit: mm DC-DC Converter Applications Inverter Lighting Applications • Excellent switching times: tr = 0.2 µs typ. , tf = 0.15 µs (typ.)


    Original     		2SC5439 PDF