Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR C5196 Search Results

    TRANSISTOR C5196 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C5196 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c5196

    Abstract: Transistor C5196 Toshiba transistor c5196 2SA1939 2SC5196
    Text: 2SC5196 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5196 Power Amplifier Applications Unit: mm • Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output stage Maximum Ratings Tc = 25°C Characteristics


    Original     		PDF 2SC5196 2SA1939 c5196 Transistor C5196 Toshiba transistor c5196 2SA1939 2SC5196

    c5196

    Abstract: Toshiba transistor c5196 Transistor C5196 2SA1939 2SC5196
    Text: 2SC5196 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5196 Power Amplifier Applications Unit: mm • Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Tc = 25°C Characteristics


    Original     		PDF 2SC5196 2SA1939 c5196 Toshiba transistor c5196 Transistor C5196 2SA1939 2SC5196

    Toshiba transistor c5196

    Abstract: c5196 Transistor C5196
    Text: 2SC5196 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5196 Power Amplifier Applications Unit: mm • Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Tc = 25°C Characteristics


    Original     		PDF 2SC5196 2SA1939 2-16C1A Toshiba transistor c5196 c5196 Transistor C5196