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    TRANSISTOR C47 Search Results

    TRANSISTOR C47 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C47 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4774 NPN SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING 6V, 50mA  FEATURES * Very low output-on resistance (RON). * Low capacitance.  ORDERING INFORMATION Order Number Package 2SC4774G-AB3-R SOT-323


    Original     		PDF 2SC4774 2SC4774G-AB3-R OT-323 QW-R220-017

    RF POWER TRANSISTOR NPN

    Abstract: 2SC4774 2SC4774L-AL3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4774 NPN SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING 6V, 50mA FEATURES „ * Very low output-on resistance (RON). * Low capacitance. „ ORDERING INFORMATION Order Number Lead Free Halogen Free 2SC4774L-AL3-R


    Original     		PDF 2SC4774 2SC4774L-AL3-R 2SC4774G-AL3-R OT-323 QW-R220-017 RF POWER TRANSISTOR NPN 2SC4774 2SC4774L-AL3-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4774 NPN SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING 6V, 50mA FEATURES „ * Very low output-on resistance (RON). * Low capacitance. „ ORDERING INFORMATION Order Number Lead Free Halogen Free 2SC4774L-AL3-R


    Original     		PDF 2SC4774 2SC4774L-AL3-R 2SC4774G-AL3-R OT-323 QW-R220-017

    BLF6G13L

    Abstract: UT-141C-25-TP
    Text: BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 3 — 14 October 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.


    Original     		PDF BLF6G13L-250P; BLF6G13LS-250P BLF6G13L-250P 6G13LS-250P BLF6G13L UT-141C-25-TP

    UT-141C-25-TP

    Abstract: BLF6G13L-250P 200B 4350B 800B UT-141C-35-TP 250WF
    Text: BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 2 — 21 March 2011 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.


    Original     		PDF BLF6G13L-250P; BLF6G13LS-250P BLF6G13L-250P 6G13LS-250P UT-141C-25-TP 200B 4350B 800B UT-141C-35-TP 250WF

    d2493

    Abstract: c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852
    Text: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10


    Original     		PDF A1186. A1215. A1216. A1262. A1294. A1295. A1303. A1386/A A1488/A A1492. d2493 c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852

    c4381

    Abstract: D2493 c4467 c4468 C4131 c4467 a1694 C3519 c3852 C3834 d2494
    Text: Contents Transistor Selection Guide .2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10


    Original     		PDF A1186. A1215. A1216. A1262. A1294. A1295. A1303. A1386/A A1488/A A1492. c4381 D2493 c4467 c4468 C4131 c4467 a1694 C3519 c3852 C3834 d2494

    D2641

    Abstract: c4381 transistor A114 C5239 b1686 c4517 C4131 C3284 c4467 C4300
    Text: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10


    Original     		PDF A1186. A1215. A1216. A1262. A1294. A1295. A1303. A1386/A A1488/A A1492. D2641 c4381 transistor A114 C5239 b1686 c4517 C4131 C3284 c4467 C4300

    C4517

    Abstract: c5287 C4138 a1695 power transistor transistor c4381 C4517A C3678 C3852A A1216 C2922 transistor c5287
    Text: Transistor Selection Guide • VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A C5239 600 550 C3679 C4300 C4706 C3927 C4557 C3830 C4907 400 C4073 C4418 C4662 C5130 C3831 C3832 C3890 C4130 C4546 C4138 C4296 C3833 C4297 C5071 D2017 200 A1668


    Original     		PDF C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A C5239 c5287 C4138 a1695 power transistor transistor c4381 C3852A A1216 C2922 transistor c5287

    Untitled

    Abstract: No abstract text available
    Text: 2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz typ. • Complementary to 2SA1837 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SC4793 2SA1837 2-10Rare

    transistor C4793

    Abstract: c4793 c4793 transistor c4793 datasheet 2sc4793 2SA1837
    Text: 2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz typ. • Complementary to 2SA1837 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SC4793 2SA1837 2-10R1A transistor C4793 c4793 c4793 transistor c4793 datasheet 2sc4793 2SA1837

    transistor C4793

    Abstract: c4793 C4793 TOSHIBA toshiba c4793 c4793 transistor 2SC4793 2Sc4793 toshiba
    Text: 2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz typ. • Complementary to 2SA1837 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SC4793 2SA1837 2-10R1A transistor C4793 c4793 C4793 TOSHIBA toshiba c4793 c4793 transistor 2SC4793 2Sc4793 toshiba

    transistor C4793

    Abstract: c4793 C4793 TOSHIBA c4793 datasheet transistor 2SC4793 c4793 transistor 2sc4793 2SA1837 2Sc4793 toshiba
    Text: 2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz typ. • Complementary to 2SA1837 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SC4793 2SA1837 2-10R transistor C4793 c4793 C4793 TOSHIBA c4793 datasheet transistor 2SC4793 c4793 transistor 2sc4793 2SA1837 2Sc4793 toshiba

    transistor C4754

    Abstract: C4754 2SC4754 datasheets 2SC4754
    Text: 2SC4754 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4754 High-Voltage Switching Applications High-Speed DC-DC Converter and Switching Regulator Applications • Excellent switching times: tr = 1.0 µs max • High breakdown voltage: VCEO = 400 V


    Original     		PDF 2SC4754 transistor C4754 C4754 2SC4754 datasheets 2SC4754

    transistor C4754

    Abstract: No abstract text available
    Text: 2SC4754 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4754 High-Voltage Switching Applications High-Speed DC-DC Converter and Switching Regulator Applications • Excellent switching times: tr = 1.0 µs max • High breakdown voltage: VCEO = 400 V


    Original     		PDF 2SC4754 transistor C4754

    igbt 20A 1200v

    Abstract: TRANSISTOR BIPOLAR 400V 20A IRGPH40S
    Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz


    Original     		PDF IRGPH40S 400Hz) O-247AC igbt 20A 1200v TRANSISTOR BIPOLAR 400V 20A IRGPH40S

    AGR09180EF

    Abstract: JESD22-C101A
    Text: Preliminary Data Sheet March 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09180EF Hz--895 AGR09180EF DS04-123RFPP DS04-031RFPP) JESD22-C101A

    c5047

    Abstract: JESD22-C101A AGR09180EF 100B3R9BW 100B4R7 100B4R7BW
    Text: Preliminary Data Sheet April 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09180EF Hz--895 AGR09180EF DS04-155RFPP DS04-123RFPP) c5047 JESD22-C101A 100B3R9BW 100B4R7 100B4R7BW

    AGR09180EF

    Abstract: JESD22-C101A transistor z14 L
    Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global


    Original     		PDF AGR09180EF Hz--895 AGR09180EF suit-20 AGR19K180U JESD22-C101A transistor z14 L

    z24 mosfet

    Abstract: No abstract text available
    Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global


    Original     		PDF AGR09180EF Hz--895 DS04-123RFPP DS04-031RFPP) z24 mosfet

    c879

    Abstract: c879 transistor Logarithmic Amplifier detector rf power cell phone detector china mobile phone circuit diagram Diplexer 900 1800 RF Bipolar Transistor china phone BLOCK diagram transistor C013 RF Power detector
    Text: RF142 Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications The RF142 Power Amplifier PA controller is a highly integrated, monolithic device optimized for use in 900 MHz, 1800 MHz, and 1900 MHz Global System For


    Original     		PDF RF142 RF142 RF142, c879 c879 transistor Logarithmic Amplifier detector rf power cell phone detector china mobile phone circuit diagram Diplexer 900 1800 RF Bipolar Transistor china phone BLOCK diagram transistor C013 RF Power detector

    c879

    Abstract: c879 transistor china mobile phone circuit diagram C473 RF142 Block Diagram of 8253
    Text: RF142 Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications The RF142 Power Amplifier PA controller is a highly integrated, monolithic device optimized for use in 900 MHz, 1800 MHz, and 1900 MHz Global System For


    Original     		PDF RF142 RF142 c879 c879 transistor china mobile phone circuit diagram C473 Block Diagram of 8253

    motorola transistor 7439

    Abstract: 741TC TRANSISTOR REPLACEMENT GUIDE sprague transistors MC1304 SN75474 ULN2151D MC1310P 3067 dual transistor motorola transistor array 14 pin dip
    Text: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.


    OCR Scan     		PDF ULS-2045H ULN-2046A ULN-2047A ULN-2054A ULN-2081A MC1439G MC1439P1 MC1741CG MC1741CP1 MC3003 motorola transistor 7439 741TC TRANSISTOR REPLACEMENT GUIDE sprague transistors MC1304 SN75474 ULN2151D MC1310P 3067 dual transistor motorola transistor array 14 pin dip

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: ULN2083 array MC1310P sfc*2741 TBA221 741TC uln2046a All in one TRANSISTOR REPLACEMENT GUIDE SFC2741 MC1305P
    Text: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.


    OCR Scan     		PDF ULS-2045H ULN-2046A ULN-2047A ULN-2054A ULN-2081A ULN2289A SFC2741C SFC2741 ULN2151D ULN2151M TRANSISTOR REPLACEMENT GUIDE ULN2083 array MC1310P sfc*2741 TBA221 741TC uln2046a All in one TRANSISTOR REPLACEMENT GUIDE MC1305P