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    TRANSISTOR C42 Search Results

    TRANSISTOR C42 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C42 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    222259116641

    Abstract: 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module BLV859
    Text: APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION 2.1 Amplifier Electrical design objectives 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 3.4


    Original     		PDF BLV859 AN98013 SCA57 222259116641 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module

    c39 transistor

    Abstract: transistor c36 c38 transistor Philips 2222-581 BLV950 PHILIPS BLV950 philips resistor 2322 156 Philips 2222 052 transistor c37
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification File under Discrete Semiconductors, SC08b 1996 Jan 26 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 FEATURES DESCRIPTION • Internal input and output matching for easy matching,


    Original     		PDF BLV950 SC08b OT262A2 SCDS47 127061/1100/02/pp16 c39 transistor transistor c36 c38 transistor Philips 2222-581 BLV950 PHILIPS BLV950 philips resistor 2322 156 Philips 2222 052 transistor c37

    J307 FET

    Abstract: AGR19180EF JESD22-A114 agere c8
    Text: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19180EF Hz--1990 AGR19180EF DS04-080RFPP DS02-377RFPP) J307 FET JESD22-A114 agere c8

    Philips 2222-581

    Abstract: BLV950 St 1702 TRANSISTOR ferroxcube 4322
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification Supersedes data of 1996 Jan 26 1997 Oct 27 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 FEATURES PINNING - SOT262A2 • Internal input and output matching for easy matching,


    Original     		PDF BLV950 OT262A2 SCA55 127067/00/03/pp16 Philips 2222-581 BLV950 St 1702 TRANSISTOR ferroxcube 4322

    J307 FET

    Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
    Text: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19180EF Hz--1990 AGR19180EF DS04-162RFPP DS04-080RFPP) J307 FET JESD22-A114 c38 transistor j526 j451 J386

    AGR19180EF

    Abstract: JESD22-A114 Z111A
    Text: AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19180EF Hz--1990 AGR19180EF JESD22-A114 Z111A

    J307 FET

    Abstract: J307 transistor c35 equivalent IM335
    Text: Preliminary Data Sheet July 2003 AGR19180E 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19180E is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19180E Hz--1990 AGR19180EU AGR19180EF Voltag48, DS02-377RFPP J307 FET J307 transistor c35 equivalent IM335

    BLF6G13L

    Abstract: UT-141C-25-TP
    Text: BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 3 — 14 October 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.


    Original     		PDF BLF6G13L-250P; BLF6G13LS-250P BLF6G13L-250P 6G13LS-250P BLF6G13L UT-141C-25-TP

    UT-141C-25-TP

    Abstract: BLF6G13L-250P 200B 4350B 800B UT-141C-35-TP 250WF
    Text: BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 2 — 21 March 2011 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.


    Original     		PDF BLF6G13L-250P; BLF6G13LS-250P BLF6G13L-250P 6G13LS-250P UT-141C-25-TP 200B 4350B 800B UT-141C-35-TP 250WF

    C42C2

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company C42C2 TO-126 SOT-32 Plastic Package C42C2 NPN PLASTIC POWER TRANSISTOR Complementary C43C series General Purpose Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE


    Original     		PDF ISO/TS16949 C42C2 O-126 OT-32) C-120 C42C2

    C43C2

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company C43C2 TO-126 SOT-32 Plastic Package C43C2 PNP PLASTIC POWER TRANSISTOR Complementary C42C series General Purpose Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE


    Original     		PDF ISO/TS16949 C43C2 O-126 OT-32) C-120 C43C2

    C42C2

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company C42C2 TO-126 SOT-32 Plastic Package C42C2 NPN PLASTIC POWER TRANSISTOR Complementary C43C series General Purpose Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR


    Original     		PDF C42C2 O-126 OT-32) C-120 C42C2

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company C43C2 TO-126 SOT-32 Plastic Package C43C2 PNP PLASTIC POWER TRANSISTOR Complementary C42C series General Purpose Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR


    Original     		PDF C43C2 O-126 OT-32) C-120

    C43C2

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company C43C2 TO-126 SOT-32 Plastic Package C43C2 PNP PLASTIC POWER TRANSISTOR Complementary C42C series General Purpose Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR


    Original     		PDF C43C2 O-126 OT-32) C-120 C43C2

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer C42C2 TO-126 SOT-32 Plastic Package C42C2 NPN PLASTIC POWER TRANSISTOR Complementary C43C series General Purpose Applications


    Original     		PDF C42C2 O-126 OT-32) C-120

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer C43C2 TO-126 SOT-32 Plastic Package C43C2 PNP PLASTIC POWER TRANSISTOR Complementary C42C series General Purpose Applications


    Original     		PDF C43C2 O-126 OT-32) C-120

    d2493

    Abstract: c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852
    Text: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10


    Original     		PDF A1186. A1215. A1216. A1262. A1294. A1295. A1303. A1386/A A1488/A A1492. d2493 c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852

    c4381

    Abstract: D2493 c4467 c4468 C4131 c4467 a1694 C3519 c3852 C3834 d2494
    Text: Contents Transistor Selection Guide .2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10


    Original     		PDF A1186. A1215. A1216. A1262. A1294. A1295. A1303. A1386/A A1488/A A1492. c4381 D2493 c4467 c4468 C4131 c4467 a1694 C3519 c3852 C3834 d2494

    D2641

    Abstract: c4381 transistor A114 C5239 b1686 c4517 C4131 C3284 c4467 C4300
    Text: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10


    Original     		PDF A1186. A1215. A1216. A1262. A1294. A1295. A1303. A1386/A A1488/A A1492. D2641 c4381 transistor A114 C5239 b1686 c4517 C4131 C3284 c4467 C4300

    C4517

    Abstract: c5287 C4138 a1695 power transistor transistor c4381 C4517A C3678 C3852A A1216 C2922 transistor c5287
    Text: Transistor Selection Guide • VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A C5239 600 550 C3679 C4300 C4706 C3927 C4557 C3830 C4907 400 C4073 C4418 C4662 C5130 C3831 C3832 C3890 C4130 C4546 C4138 C4296 C3833 C4297 C5071 D2017 200 A1668


    Original     		PDF C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A C5239 c5287 C4138 a1695 power transistor transistor c4381 C3852A A1216 C2922 transistor c5287

    capacitor 106 35K

    Abstract: 226 35K 106 35K capacitor 106 35K tantalum capacitor 106 35K electrolytic 105 35K capacitor MRF21120R6 capacitor 226 35K
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET


    Original     		PDF MRF21120/D MRF21120R6 capacitor 106 35K 226 35K 106 35K capacitor 106 35K tantalum capacitor 106 35K electrolytic 105 35K capacitor MRF21120R6 capacitor 226 35K

    Untitled

    Abstract: No abstract text available
    Text: C42C2 C42C2 NPN PLASTIC POWER TRANSISTOR Complementary C43C series General Purpose Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 2.25 TYP. E F 0 .49 | 0 .7 5 C 4.5 TYP. L 15.7 TYP. M


    OCR Scan     		PDF C42C2

    Untitled

    Abstract: No abstract text available
    Text: It C42C2 C42C2 NPN PLASTIC POWER TRANSISTOR Complementary C43C series General Purpose Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 2 .25 TYP. E F 0 .49 | 0 .75 G 4.5 TYP. L 15.7 TYP.


    OCR Scan     		PDF C42C2 C42C2

    4D4 TRANSISTOR

    Abstract: C42C2
    Text: C42C2 C42C2 NPN PLASTIC POWER TRANSISTOR Complementary C43C series General Purpose Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. A 7.4 7.8 10.8 B 10.5 C 2.4 2.7 D 0 .7 0.9 E F 2.25 TYP. 0 .49 | 0 .7 5 C 4.5 TYP. L 15.7 TYP. M


    OCR Scan     		PDF C42C2 C42C2 4D4 TRANSISTOR