philips ferroxcube 4c6
Abstract: BR 78L05 BLF278 iec c13 c14 Philips film capacitors VHF transmitter transistor c36
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of October 1992 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor FEATURES BLF278 PINNING - SOT262A1
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BLF278
OT262A1
philips ferroxcube 4c6
BR 78L05
BLF278
iec c13 c14
Philips film capacitors
VHF transmitter
transistor c36
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philips Trimmers 60 pf
Abstract: trimmer capacitor ceramic philips ferroxcube 4c6 BLF278 ferroxcube toroid 4312 020 36642 transistor power BR 78L05 transistor c36 balun
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor
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BLF278
SC08a
OT262A1
philips Trimmers 60 pf
trimmer capacitor ceramic
philips ferroxcube 4c6
BLF278
ferroxcube toroid
4312 020 36642
transistor power
BR 78L05
transistor c36
balun
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D091 BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of 1996 Oct 21 2003 Sep 19 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 PINNING - SOT262A1 FEATURES
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M3D091
BLF278
OT262A1
OT262A1
SCA75
613524/04/pp23
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c38 transistor
Abstract: capacitor MKT Philips philips MKT transistor rf vhf BR 78L05 capacitor MKT ceramic trimmer capacitor L7 diode philips catalog potentiometer 100 pf, ATC Chip Capacitor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF378 VHF push-pull power MOS transistor Product specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 17 Philips Semiconductors Product specification VHF push-pull power MOS transistor
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BLF378
SC08a
OT262A1
c38 transistor
capacitor MKT Philips
philips MKT
transistor rf vhf
BR 78L05
capacitor MKT
ceramic trimmer capacitor
L7 diode
philips catalog potentiometer
100 pf, ATC Chip Capacitor
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2222 809 09006 capacitor
Abstract: BLF278 philips ferroxcube 4c6
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor
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BLF278
SC08a
OT262A1
2222 809 09006 capacitor
BLF278
philips ferroxcube 4c6
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BLF278
Abstract: transistor c32 blf278 rf power philips ferroxcube 4c6 2222 809 09006 capacitor resistor 2222 916 capacitor 0.01 k 400 MKT Philips 2222 867 4 n 608 VHF Transistors
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of 1996 Oct 21 2003 Sep 19 Philips Semiconductors Product Specification VHF push-pull power MOS transistor FEATURES BLF278 PINNING - SOT262A1
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M3D091
BLF278
OT262A1
OT262A1
SCA75
613524/04/pp23
BLF278
transistor c32
blf278 rf power
philips ferroxcube 4c6
2222 809 09006 capacitor
resistor 2222 916
capacitor 0.01 k 400 MKT
Philips 2222 867
4 n 608
VHF Transistors
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BLF378
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF378 VHF push-pull power MOS transistor Product specification Supersedes data of 1996 Oct 17 1998 Jul 29 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF378 PINNING - SOT262A1
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M3D091
BLF378
OT262A1
SCA60
125108/00/03/pp16
BLF378
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222259116641
Abstract: 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module BLV859
Text: APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION 2.1 Amplifier Electrical design objectives 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 3.4
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BLV859
AN98013
SCA57
222259116641
222259016629
bvc62
AN98013
BD139 transistor circuit diagram
BLV589
c38 transistor
RG4M
UHF amplifier module
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c39 transistor
Abstract: transistor c36 c38 transistor Philips 2222-581 BLV950 PHILIPS BLV950 philips resistor 2322 156 Philips 2222 052 transistor c37
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification File under Discrete Semiconductors, SC08b 1996 Jan 26 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 FEATURES DESCRIPTION • Internal input and output matching for easy matching,
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BLV950
SC08b
OT262A2
SCDS47
127061/1100/02/pp16
c39 transistor
transistor c36
c38 transistor
Philips 2222-581
BLV950
PHILIPS BLV950
philips resistor 2322 156
Philips 2222 052
transistor c37
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J307 FET
Abstract: AGR19180EF JESD22-A114 agere c8
Text: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
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AGR19180EF
Hz--1990
AGR19180EF
DS04-080RFPP
DS02-377RFPP)
J307 FET
JESD22-A114
agere c8
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Philips 2222-581
Abstract: BLV950 St 1702 TRANSISTOR ferroxcube 4322
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification Supersedes data of 1996 Jan 26 1997 Oct 27 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 FEATURES PINNING - SOT262A2 • Internal input and output matching for easy matching,
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BLV950
OT262A2
SCA55
127067/00/03/pp16
Philips 2222-581
BLV950
St 1702 TRANSISTOR
ferroxcube 4322
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J307 FET
Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
Text: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
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AGR19180EF
Hz--1990
AGR19180EF
DS04-162RFPP
DS04-080RFPP)
J307 FET
JESD22-A114
c38 transistor
j526
j451
J386
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AGR19180EF
Abstract: JESD22-A114 Z111A
Text: AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—
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AGR19180EF
Hz--1990
AGR19180EF
JESD22-A114
Z111A
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J307 FET
Abstract: J307 transistor c35 equivalent IM335
Text: Preliminary Data Sheet July 2003 AGR19180E 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19180E is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
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AGR19180E
Hz--1990
AGR19180EU
AGR19180EF
Voltag48,
DS02-377RFPP
J307 FET
J307
transistor c35 equivalent
IM335
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Johanson Piston Trimmer
Abstract: G200
Text: e PTB 20235 70 Watts, 2.1–2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, it is specifically intended for operation as a
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1-877-GOLDMOS
1301-PTB
Johanson Piston Trimmer
G200
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Johanson Piston Trimmer
Abstract: G200 RF TRANSISTOR 2GHZ
Text: e PTB 20125 100 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended for 26 Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP minimum output power, it is specifically intended for operation as a
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1-877-GOLDMOS
1301-PTB
Johanson Piston Trimmer
G200
RF TRANSISTOR 2GHZ
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Johanson Piston Trimmer
Abstract: Transistor 025l
Text: e PTB 20235 70 Watts, 2.1–2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP power output, it is specifically intended for operation as a final stage
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1-877-GOLDMOS
1301-PTB
Johanson Piston Trimmer
Transistor 025l
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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capacitor 0.01 k 400 MKT philips
Abstract: GS 78L05 N
Text: DISCRETE SEMICONDUCTORS BLF378 VHF push-pull power MOS transistor Product specification Supersedes data of 1996 Oct 17 File under Discrete Semiconductors, SC19a Philips Sem iconductors 1998 Jul 29 PHILIPS Philips Semiconductors Product specification VHF push-pull power MOS transistor
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BLF378
SC19a
OT262A1
BLF378
OT262
125108/00/03/pp16
capacitor 0.01 k 400 MKT philips
GS 78L05 N
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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c38 transistor
Abstract: 2160 transistor Johanson Piston Trimmer
Text: ERICSSON ^ PTB 20235 70 Watts, 2.1-2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, it is specifically intended for operation as a
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BATC100)
c38 transistor
2160 transistor
Johanson Piston Trimmer
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c38 transistor
Abstract: 3 w RF POWER TRANSISTOR NPN 5.8 ghz
Text: ERICSSON ^ PTB 20125 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20125 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation across the 1.8 to 2.0 GHz band. Rated at 100 w atts PEP minim um output power, it is specifically intended for
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R2C TRANSISTOR
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20125 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended tor 26 Vdc class AB operation from 1,8 to 2.0 GHz. Rated at 100 w atts PEP minimum output power, it is specifically intended for operation as a
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