c337 transistor
Abstract: c338 transistor transistor c337 C337 w 79 C336 SMD C339 transistor c338 c336 transistors g10 smd transistor Transistor c340
Text: PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC20M-S
10kHz)
SMD-220
C-340
c337 transistor
c338 transistor
transistor c337
C337 w 79
C336 SMD
C339
transistor c338
c336 transistors
g10 smd transistor
Transistor c340
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Electrohydraulic
Abstract: No abstract text available
Text: BUK652R1-30C N-channel TrenchMOS intermediate level FET Rev. 02 — 16 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK652R1-30C
Electrohydraulic
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BUK6510-75C
Abstract: No abstract text available
Text: BUK6510-75C N-channel TrenchMOS FET Rev. 02 — 13 December 2010 Product data sheet 1. Product profile 1.1 General description Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has
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BUK6510-75C
BUK6510-75C
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Untitled
Abstract: No abstract text available
Text: BUK652R1-30C N-channel TrenchMOS intermediate level FET Rev. 02 — 16 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK652R1-30C
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Untitled
Abstract: No abstract text available
Text: BUK652R7-30C N-channel TrenchMOS intermediate level FET Rev. 02 — 16 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK652R7-30C
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Untitled
Abstract: No abstract text available
Text: BUK6510-75C N-channel TrenchMOS FET Rev. 02 — 13 December 2010 Product data sheet 1. Product profile 1.1 General description Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has
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BUK6510-75C
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PH5030AL
Abstract: PH5030
Text: PH5030AL N-channel TrenchMOS logic level FET Rev. 03 — 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PH5030AL
PH5030AL
PH5030
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PSMN7R0-30YL
Abstract: 10S100
Text: PSMN7R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN7R0-30YL
PSMN7R0-30YL
10S100
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PSMN3R0-30YL
Abstract: No abstract text available
Text: PSMN3R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 28 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN3R0-30YL
PSMN3R0-30YL
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PSMN1R5-25YL
Abstract: No abstract text available
Text: PSMN1R5-25YL N-channel TrenchMOS logic level FET Rev. 01 — 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN1R5-25YL
PSMN1R5-25YL
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PSMN5R0-30YL
Abstract: jmb 363
Text: PSMN5R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN5R0-30YL
PSMN5R0-30YL
jmb 363
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transistor c337
Abstract: PSMN1R7-30YL
Text: PSMN1R7-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN1R7-30YL
PSMN1R7-30YL
transistor c337
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PSMN2R0-30YL
Abstract: No abstract text available
Text: PSMN2R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN2R0-30YL
PSMN2R0-30YL
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PSMN4R0-30YL
Abstract: No abstract text available
Text: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN4R0-30YL
PSMN4R0-30YL
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PSMN9R0-30YL
Abstract: No abstract text available
Text: PSMN9R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 5 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN9R0-30YL
PSMN9R0-30YL
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PSMN3R5-30YL
Abstract: No abstract text available
Text: PSMN3R5-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN3R5-30YL
PSMN3R5-30YL
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PSMN9R0-30YL
Abstract: c337 transistor
Text: PSMN9R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN9R0-30YL
PSMN9R0-30YL
c337 transistor
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c337 transistor
Abstract: C338 c338 transistor
Text: PH1825AL N-channel TrenchMOS logic level FET Rev. 01 — 22 April 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PH1825AL
PH1825AL
c337 transistor
C338
c338 transistor
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c337 transistor
Abstract: C337 w 79 transistor c337 C336 SMD c338 transistor c336 transistors C337 W 80 transistor C337 W transistor SMD LOA transistor c338
Text: Previous Datasheet Index Next Data Sheet PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC20M-S
10kHz)
SMD-220
C-340
c337 transistor
C337 w 79
transistor c337
C336 SMD
c338 transistor
c336 transistors
C337 W 80 transistor
C337 W
transistor SMD LOA
transistor c338
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PH9030AL
Abstract: PH9030AL SOT669 PH9030A
Text: PH9030AL N-channel TrenchMOS logic level FET Rev. 07 — 14 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PH9030AL
PH9030AL
PH9030AL SOT669
PH9030A
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PSMN6R0-30YL
Abstract: No abstract text available
Text: PSMN6R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 4 Januari 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN6R0-30YL
PSMN6R0-30YL
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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EL 817 c337
Abstract: transistor c337 c337 transistor C337 W 61 DS4005
Text: DISCRETE SEMICONDUCTORS SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification
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BUK107-50DS
SC13a
BUK107-50
SCA54
137087/1200/02/pp12
EL 817 c337
transistor c337
c337 transistor
C337 W 61
DS4005
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C 337-25
Abstract: C 33725 c337 pnp transistor C 337-40 c 33740 transistor NPN c337 BC337 sot54 c337 transistor transistor c337 C337 W 63
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor BC337 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V).
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BC337
BC327.
115002/00/03/pp8
C 337-25
C 33725
c337 pnp transistor
C 337-40
c 33740
transistor NPN c337
BC337 sot54
c337 transistor
transistor c337
C337 W 63
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