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    TRANSISTOR C301 Search Results

    TRANSISTOR C301 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C301 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C3013

    Abstract: No abstract text available
    Text: ISO 9001 Registered Process C3013 CMOS 3µm 10 Volt Single Metal Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage


    Original     		PDF C3013 100x100 C3013

    C3017

    Abstract: No abstract text available
    Text: ISO 9001 Registered Process C3017 CMOS 3µm 10 Volt Analog Mixed Mode Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage


    Original     		PDF C3017 C3017 C3017-4-98

    C3015

    Abstract: No abstract text available
    Text: ISO 9001 Registered Process C3015 CMOS 3µm Digital Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage


    Original     		PDF C3015 C3015

    C3014

    Abstract: No abstract text available
    Text: ISO 9001 Registered Process C3014 CMOS 3µm 5 Volt Single Metal Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage


    Original     		PDF C3014 100x100 C3014

    0.6 um cmos process

    Abstract: C3017
    Text: ISO 9001 Registered Process C3017 CMOS 3µm 10 Volt Analog Mixed Mode Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage


    Original     		PDF C3017 C3017 0.6 um cmos process

    C3013

    Abstract: No abstract text available
    Text: ISO 9001 Registered Process C3013 CMOS 3µm 10 Volt Single Metal Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage


    Original     		PDF C3013 100x100 C3013 C3013-4-98

    0.6 um cmos process

    Abstract: C3015
    Text: ISO 9001 Registered Process C3015 CMOS 3µm Digital Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage


    Original     		PDF C3015 C3015-4-98 0.6 um cmos process C3015

    C3014

    Abstract: 0.6 um cmos process
    Text: ISO 9001 Registered Process C3014 CMOS 3µm 5 Volt Single Metal Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage


    Original     		PDF C3014 100x100 C3014 C3014-4-98 0.6 um cmos process

    C3018LD

    Abstract: No abstract text available
    Text: DMC3018LSD COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • • Mechanical Data • • Complementary Pair MOSFET Low On-Resistance


    Original     		PDF DMC3018LSD AEC-Q101 J-STD-020D DS31310 C3018LD

    Untitled

    Abstract: No abstract text available
    Text: DMC3018LSD COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NE W PRODUC T • • • • • • • • • Mechanical Data • • Complementary Pair MOSFET Low On-Resistance


    Original     		PDF DMC3018LSD AEC-Q101 J-STD-020D DS31310

    C3018LD

    Abstract: No abstract text available
    Text: DMC3018LSD COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NE W PRODUC T • • • • • • • • • Mechanical Data • • Complementary Pair MOSFET Low On-Resistance


    Original     		PDF DMC3018LSD AEC-Q101 J-STD-020D DS31310 C3018LD

    Untitled

    Abstract: No abstract text available
    Text: DMC3018LSD COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NE W PRODUC T • • • • • • • • • Mechanical Data • • Complementary Pair MOSFET Low On-Resistance


    Original     		PDF DMC3018LSD AEC-Q101 J-STD-020D DS31310

    lta 301

    Abstract: data sheet for bipolar junction diod D-12 IRGBC20M c306 TRANSISTOR
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1127 IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


    Original     		PDF IRGBC20M 10kHz) O-220AB C-306 lta 301 data sheet for bipolar junction diod D-12 IRGBC20M c306 TRANSISTOR

    GC 301

    Abstract: lta 301 D-12 IRGBC20M
    Text: PD - 9.1127 IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


    Original     		PDF IRGBC20M 10kHz) O-220AB C-306 GC 301 lta 301 D-12 IRGBC20M

    TRANSISTOR D2102

    Abstract: L3003 TRANSISTOR ETP35KAN619U L3005 TRANSISTOR 1SR124-4AT82 transistor D454 D362 TRANSISTOR l3007 ma29ta5 TELEVISION EHT TRANSFORMERS
    Text: TX-28/25/21MD4 Service Manual Safety Specifications Service Support Block Diagrams Parts List Service Information Adjustments Self Check Schematic Diagrams Service Hints Mechanical View Waveforms Supplementary Information This interface provides a link between the TV and


    Original     		PDF TX-28/25/21MD4 TZS6EZ002 TZS7EZ006 TZS7EZ005 TRANSISTOR D2102 L3003 TRANSISTOR ETP35KAN619U L3005 TRANSISTOR 1SR124-4AT82 transistor D454 D362 TRANSISTOR l3007 ma29ta5 TELEVISION EHT TRANSFORMERS

    schematic diagram tv sony 21 trinitron

    Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
    Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV


    Original     		PDF KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112

    panasonic inverter 707 manual

    Abstract: traffic light using 68K 2PC 502 DSP02-002-431G C516* npn transistor GRM21BR11H104KA01L 501C LED Driver EZ-0008 p120 photocoupler C517 transistor
    Text: User’s Manual 78K0/IB2 Fluorescent Ballast Evaluation Board Target Device 78K0/IB2 Microcontroller ZBB-CE-09-0011-E Data Published March 2009 NEC Electronics Corporation 1/25 The information in this document is current as of March, 2009. The information is subject to change


    Original     		PDF 78K0/IB2 78K0/IB2 ZBB-CE-09-0011-E TC74VHC125F TC74VHC14F 3386F-1-104TLF CMR309T-16 000MABJ-UT panasonic inverter 707 manual traffic light using 68K 2PC 502 DSP02-002-431G C516* npn transistor GRM21BR11H104KA01L 501C LED Driver EZ-0008 p120 photocoupler C517 transistor

    transistor C9012

    Abstract: transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram transistor c9014 c9015 transistor c9018 transistor transistor C9015
    Text: APPLICATION NOTE The GTV1000 Global TV Receiver AN98051 Quvyvƒ†ÃTr€ vp‚qˆp‡‚…† The GTV1000 Global TV Receiver Application Note AN98051 Abstract The GTV1000 receiver has been designed around the TDA884X TV signal processor. The large signal part is suited for 90° picture tubes and build on one board with the small signal part.


    Original     		PDF GTV1000 AN98051 GTV1000 TDA884X C9029 220uF C6004 transistor C9012 transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram transistor c9014 c9015 transistor c9018 transistor transistor C9015

    dali master schematic

    Abstract: DSP02-002-431G GRM21BR11H104KA01L dali schematic TRANSISTOR 707 diode 702 1ss133 diode mip022 ic501 panasonic inverter 707 manual
    Text: Application Note Controlling Fluorescent Lamp Ballasts by Using 78K0/Ix2 This application note describes how to control fluorescent lamp ballasts by using the various features of the 78K0/Ix2 microcontroller. Details about power factor correction PFC controlled by using a PWM timer that operates in


    Original     		PDF 78K0/Ix2 78K0/IY2 78K0/IA2 78K0/IB2 U19665EJ2V0AN00 G0706 dali master schematic DSP02-002-431G GRM21BR11H104KA01L dali schematic TRANSISTOR 707 diode 702 1ss133 diode mip022 ic501 panasonic inverter 707 manual

    74h32

    Abstract: MC3021 MC3051 MC3023 MC3151 C3109 MC3029 MC3060 MC3025 MC3001
    Text: em o, öö INTEGRATED CIRCUITS FROM MOTOROLA D f f liT f H DDD MC3000 Series 0 to +75°C /M C 74H 00 MC3100 Series ( - 5 5 to +125°C )/M C 54H 00 IS S U E A M T T L III integrated circuits comprise a family of transistor­ transistor logic designed for general purpose digital applications.


    OCR Scan     		PDF MC3000 /MC74H00 MC3100 /MC54H00 MC3052/MC3152 74h32 MC3021 MC3051 MC3023 MC3151 C3109 MC3029 MC3060 MC3025 MC3001

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


    OCR Scan     		PDF

    EK-033-8906

    Abstract: RH5rc30 transistor 502 RH5RC RH5RC302 RH5RC502 transistor c301 40 pin ic no 501 RH5RC301
    Text: EK-033-8906 RH5RC301/302/501/502 STEP-UP DC/DC c o n v e r te r RH5RC301/302/501/502 are compact step-up DC/DC converter ICs, developed with the CMOS process technology. They consist of reference voltage source, error amplifier, control transistor, oscil­


    OCR Scan     		PDF EK-033-8906 RH5RC301/302/501/502 RH5RC301/302/501/502 RH5RC301 RH5RC302 RH5RC501 RH5RC502 C301/302/501/502 RH5RC301A-T1 EK-033-8906 RH5rc30 transistor 502 RH5RC RH5RC502 transistor c301 40 pin ic no 501

    C502 Zener diode

    Abstract: vr301 potentiometer VR501 F101 Type T fuse TRANSISTOR C309 4518BE VR502 vr302 potentiometer 2sc1015-GR 2SC1015GR
    Text: ^ SERVICING INFORMATION B X PRECISION* M O D E L 3011A 3011B FUNCTION GENERATOR PARTS LIST SCHEMATIC SYMBOL DESCRIPTION B+K PRECISION PART NUMBER RESISTORS Unlisted resistors are +5%, 1/4 W. See Schematic for value. R101, 102 R104 R105 R205 R206 R207 R208


    OCR Scan     		PDF 3011B R210A R211A R306-307 R405-407 VR205_ C502 Zener diode vr301 potentiometer VR501 F101 Type T fuse TRANSISTOR C309 4518BE VR502 vr302 potentiometer 2sc1015-GR 2SC1015GR

    relay Re 04501

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
    Text: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997


    OCR Scan     		PDF ENGI86 4970A E1199 relay Re 04501 JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031