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    TRANSISTOR C2804 Search Results

    TRANSISTOR C2804 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C2804 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UCC2800/2801/2802/2803/2804/2805ĆQ1 LOWĆPOWER BICMOS CURRENTĆMODE PWM ą SGLS121C − JULY 2002 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 200 V Using D D D D D D Internal Leading-Edge Blanking of the D D Machine Model C = 200 pF, R = 0


    Original     		PDF UCC2800/2801/2802/2803/2804/2805Ä SGLS121C 70-ns UC3842 UC3842A UCC2800/1/2/3/4/5

    c2800 transistor

    Abstract: transistor c2800
    Text: UCC2800/2801/2802/2803/2804/2805ĆQ1 LOWĆPOWER BICMOS CURRENTĆMODE PWM ą SGLS121C − JULY 2002 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 200 V Using D D D D D D Internal Leading-Edge Blanking of the D D Machine Model C = 200 pF, R = 0


    Original     		PDF UCC2800/2801/2802/2803/2804/2805Q1 SGLS121C 70-ns UC3842 UC3842A UCC2800/1/2/3/4/5 c2800 transistor transistor c2800

    Untitled

    Abstract: No abstract text available
    Text: UCC2800/2801/2802/2803/2804/2805ĆQ1 LOWĆPOWER BICMOS CURRENTĆMODE PWM ą SGLS121C − JULY 2002 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 200 V Using D D D D D D Internal Leading-Edge Blanking of the D D Machine Model C = 200 pF, R = 0


    Original     		PDF UCC2800/2801/2802/2803/2804/2805Ä SGLS121C 70-ns UC3842 UC3842A UCC2800/1/2/3/4/5

    Untitled

    Abstract: No abstract text available
    Text: UCC2800/2801/2802/2803/2804/2805ĆQ1 LOWĆPOWER BICMOS CURRENTĆMODE PWM ą SGLS121C − JULY 2002 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 200 V Using D D D D D D Internal Leading-Edge Blanking of the D D Machine Model C = 200 pF, R = 0


    Original     		PDF UCC2800/2801/2802/2803/2804/2805Ä SGLS121C 70-ns UC3842 UC3842A UCC2800/1/2/3/4/5

    C2804

    Abstract: transistor c2800
    Text: UCC2800/2801/2802/2803/2804/2805ĆQ1 LOWĆPOWER BICMOS CURRENTĆMODE PWM ą SGLS121C − JULY 2002 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 200 V Using D D D D D D Internal Leading-Edge Blanking of the D D Machine Model C = 200 pF, R = 0


    Original     		PDF UCC2800/2801/2802/2803/2804/2805Ä SGLS121C 70-ns UC3842 UC3842A UCC2800/1/2/3/4/5 C2804 transistor c2800

    C2804

    Abstract: transistor c2804
    Text: M/C2803/2804 Miere / MIC2803/2804 High-Voltage High-Current Darlington Array Preliminary Information General Features The MIC2803 and MIC2804 are high-voltage, high-current Darlington arrays ideal for switching high-power loads from logic-level TTL, CMOS, or PMOS control signals.


    OCR Scan     		PDF M/C2803/2804 MIC2803/2804 MIC2803 MIC2804 MIC2803/4 500mA, 18-pin C2804 transistor c2804