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    TRANSISTOR C2611 Search Results

    TRANSISTOR C2611 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C2611 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    c2611 transistor

    Abstract: transistor C2611 C2611 datasheet of ic 555 IC 555
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors TO—92 C2611 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 0.75 W（Tamb=25℃） 1. BASE Collector current 2.COLLECTOR ICM : 0.2 Collector-base voltage V BR CBO : 600


    Original     		O--92 C2611 270TYP 050TYP c2611 transistor transistor C2611 C2611 datasheet of ic 555 IC 555 PDF

    C2611

    Abstract: c2611 transistor
    Text: Transistor IC Transistors DIP SMDType Type SMD Type Product specification C2611 SOT-89 Unit: mm +0.1 -0.1 +0.1 -0.1 4.50 • Features 1.50 +0.1 1.80-0.1 +0.1 2.50-0.1 ● Collector Current: IC=0.2A 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 -0.1 2.60 +0.1 -0.1 +0.1


    Original     		C2611 OT-89 C2611 c2611 transistor PDF

    c2611 transistor

    Abstract: C2611 transistor C2611 to-126 npn switching transistor 400v *c2611 transistor
    Text: C2611 NPN TO-126 Transistor TO-126 1. EMITTER 2.500 1.100 2.900 1.500 7.400 7.800 2. COLLECTOR 3.900 4.100 3.000 3. BASE 3.200 10.60 0 11.00 0 3 0.000 0.300 2 1 Features — 2.100 2.300 power switching applications 1.170 1.370 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		C2611 O-126 O-126 100mA, c2611 transistor transistor C2611 to-126 npn switching transistor 400v *c2611 transistor PDF

    c2611 transistor

    Abstract: C2611
    Text: Transistors SMD Type NPN Power Transistor C2611 SOT-89 Unit: mm +0.1 -0.1 +0.1 -0.1 4.50 • Features 1.50 +0.1 1.80-0.1 +0.1 2.50-0.1 ● Collector Current: IC=0.2A 2 3 +0.1 0.44-0.1 +0.1 -0.1 2.60 +0.1 -0.1 +0.1 0.53-0.1 +0.1 0.80-0.1 1 +0.1 0.48-0.1 +0.1


    Original     		C2611 OT-89 c2611 transistor C2611 PDF

    transistor C2611

    Abstract: c2611 transistor C2611 a 2611 2611 A 2611 data sheet transistor 2611
    Text: C2611 C 2611 TRANSISTOR NPN TO-251 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range 2. COLLECTOR 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		C2611 O-251 transistor C2611 c2611 transistor C2611 a 2611 2611 A 2611 data sheet transistor 2611 PDF

    D2061 transistor

    Abstract: B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064
    Text: ORDER NO. MD0604120A3 DVD Stereo System SA-VK650GCP Colour S . Silver Type Please use this manual together with the service manual for Model No. [SA-VK650GC/GN/GS/GCS/GCT-S, Order No. MD0604118C3]. Specifications n SYSTEM SC-VK650(GCP) Notes: Music Center: SA-VK650 (GCP)


    Original     		MD0604120A3 SA-VK650GCP SA-VK650GC/GN/GS/GCS/GCT-S, MD0604118C3] SC-VK650 SA-VK650 SB-VK650 SB-WVK650 0A072 F2G0J470A031 D2061 transistor B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064 PDF

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 PDF

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 PDF

    74HC145

    Abstract: 74hc141 intel 845 crb schematics ha1648 INTEL 845 MOTHERBOARD CIRCUIT diagram opamp 741 intel dg 41 crb intel DG 31 crb IC 741 OPAMP DATASHEET GCLR SOT23-5
    Text: R Intel 852GM Chipset Platform Design Guide For Use with the Mobile Intel® Pentium® 4 Processor-M, Mobile Intel® Celeron® Processor on .13 Micron Process in the 478-Pin Package, and Intel® Celeron® M Processor January 2005 Document Number: 252338-003


    Original     		852GM 478-Pin U87A4A MAX809 C26116 74HC145 74hc141 intel 845 crb schematics ha1648 INTEL 845 MOTHERBOARD CIRCUIT diagram opamp 741 intel dg 41 crb intel DG 31 crb IC 741 OPAMP DATASHEET GCLR SOT23-5 PDF

    c2611 transistor

    Abstract: transistor C2611 transistor npn Pcm 1W C2611 200YA
    Text: TO-251 Plastic-Encapsulate Transistors C2611 TRANSISTOR NPN FEATURES .• > : L ^ rer d is s ip a t io n ''• ¿ Ì ì W / Ì Ì Ì m Ì . ^ S ~ '/ V ^ v i - • & ’ TO-251 P cm: ^ ' 1—ÎÎ if •- » - > 'ÿ - 1W (Tamb=25°C) C o lle c t o r c u rr e n t


    OCR Scan     		O-251 C2611 O-251 100mA c2611 transistor transistor C2611 transistor npn Pcm 1W 200YA PDF

    c2611 transistor

    Abstract: *c2611 transistor C2611
    Text: WC C TO-251_Piastjc-Encapsulate Transistors^ ^ C2611 TRANSISTOR NPN FEATU R E S 1 i i I 1 1 T O -2 5 1 P cm: 1W (Tamb=25°C) 1 BASE . _ ! i i i ! IcM: 0.2 A 2.C O L L E C T O R : : i J U 1 2 3 V(BR)CBO: 600 V 3.E M I T T E R junction tem perature range


    OCR Scan     		C2611 1501c 100mA c2611 transistor *c2611 transistor PDF