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    TRANSISTOR C2090 Search Results

    TRANSISTOR C2090 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C2090 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MCA255

    Abstract: MCA230 mca231 MCA255 equivalent
    Text: QUALITY TECHNOLOGIES PHOTODARLINGTON OPTOCOUPLERS MCA230 MCA231 MCA255 DESCRIPTION The MCA230, MCA231 and MCA255 are photodarlington optically coupled isolators. An infrared emitting diode coupled with a silicon photodarlington transistor. The device is supplied in a standard plastic


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    PDF MCA230 MCA231 MCA255 MCA230, MCA255 MCA230/255 C2090 MCA255 equivalent

    transistor C2075

    Abstract: g10 smd transistor SMD Transistor 1c
    Text: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from


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    PDF 74bbasi H11A1 H11A1Z H11A1 E50151 MCT9001 transistor C2075 g10 smd transistor SMD Transistor 1c

    C1685 transistor

    Abstract: C1685 R transistor H11A1Z transistor c1684 TRANSISTOR C1685 transistor c2090 C1685 C1682 transistor
    Text: QUALITY TECHNOLOGIES VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z T The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor in a standard plastic


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    PDF H11A1 H11A1Z E50151 C2090 C1683 C1684 C1685 C1296A C1685 transistor C1685 R transistor H11A1Z transistor c1684 TRANSISTOR C1685 transistor c2090 C1685 C1682 transistor

    transistor c1684

    Abstract: No abstract text available
    Text: fiJUALITY T E C H N O L O G I E S 6 CORP 27 E QUALITY TECHNOLOGIES 1 D • 74fc,bflSl G 0 D 3 S 3 7 Ö phototrahs.stor optocouplhr ^ L MCT272 DESCRIPTION PACKAGE DIMENSIONS The MCT272 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is


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    PDF MCT272 MCT272 MCT9001 transistor c1684

    SMD Transistor AFR

    Abstract: No abstract text available
    Text: 3UALITY T E C H N O L O G I E S CO RP QUALITY TECHNOLOGIES O E7E D‘ 74bbfl51 Û D 0 3 S S 3 b PHOTOTRANSISTOR OPTOCOUPLER T-41-83 MCT277 PACKAGE DIMENSIONS The MCT277 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is


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    PDF 74bbfl51 T-41-83 MCT277 MCT277 C2090 15pseconds MCT9001 SMD Transistor AFR

    smd TRANSISTOR 27e

    Abstract: TRANSISTOR SMD a38 smd 27E
    Text: dUALITY. TE CHN OLOGIES CORP 27E D 74bt.flSl QQ03M37 4 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS QUALITY TECHNOLOGIES T ~ 4 I- CNY17F1/1Z CNY17F2/2Z CNY17F3/3Z DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor.


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    PDF QQ03M37 CNY17F1/1Z CNY17F2/2Z CNY17F3/3Z CNY17 CNY17F1: CNY17F2: CNY17F3: E50151 ii54i smd TRANSISTOR 27e TRANSISTOR SMD a38 smd 27E

    transistor 41 74t

    Abstract: smd TRANSISTOR 27e
    Text: d U A L I T Y - T E C H N O L O G I E S CORP QUALITY TECHNOLOGIES S7E ì> 74bhfl51 □ □ □ 3 5 5 1 4 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS _ T-41-83 MCT2200/0Z MCT2201/1Z MCT2202/2Z PACKAGE DIMENSIONS ifil DESCRIPTION The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide


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    PDF 74bhfl51 T-41-83 MCT2200/0Z MCT2201/1Z MCT2202/2Z MCT2200, MCT2201 MCT2202 MCT2200â MCT2201â transistor 41 74t smd TRANSISTOR 27e

    Untitled

    Abstract: No abstract text available
    Text: JUALÌTY TE CHNOLOG IES CORP QUALITY TECHNOLOGIES 74L>L>aSl Q0G34SS b E7E D HIGH-VOLTAGE VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS H11D1/1Z H11D2/2Z H11D3/3Z DESCRIPTION PACKAGE DIMENSIONS & c§3 dft t 6.86 15° MAX 6.35 0.36 I T S ngnr 8,89 8.38 0.20 7.62


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    PDF Q0G34SS H11D1/1Z H11D2/2Z H11D3/3Z H11DX H11D1-D2, H11D3, MCT9001

    Untitled

    Abstract: No abstract text available
    Text: dJUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D • 74tibfiSl Q003541 T PHOTOTRANSISTOR OPTOCOUPLER T -4 1 -8 3 MCT274 PACKAGE DIMENSIONS [f t DESCRIPTION The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is


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    PDF 74tibfiSl Q003541 MCT274 MCT274 C2090 C2079 MCT9001

    C 1153

    Abstract: No abstract text available
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT210 PACKAGE DIMENSIONS The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%,


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    PDF MCT210 MCT210 MCT210--150% C2090 C12S4 C 1153

    a36 smd transistor

    Abstract: transistor smd 4z
    Text: ÖUALITY'TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D 74fe.bfl51 0003431 3 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS < != > CNY17-1/1Z CN Y17-3/3Z C N Y17-2/2Z CN Y17-4/4Z DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED


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    PDF bfl51 CNY17-1/1Z Y17-3/3Z Y17-2/2Z Y17-4/4Z CNY17 CNY17-1: CNY17-2: CNY17-3: CNY17-4: a36 smd transistor transistor smd 4z

    H11AA1 equivalent

    Abstract: C2303 11AA2
    Text: QUALITY TECHNOLOGIES AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS 1 9 H11AA1 H11AA3 H11AA2 H11AA4 The H11AAX family of devices has two GaAs emitters connected in inverse parallel driving a single silicon phototransistor output. T~ 6.86 6.35 o i _ 8.89 Bi-polar emitter input


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    PDF H11AA1 H11AA3 H11AA2 H11AA4 H11AAX C2090 C2089 C2303 C2309 H11AA1 equivalent 11AA2

    CNX35 equivalent

    Abstract: CNX35
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER CNX35 D E S C R IP T IO N P A C K A G E D IM E N S IO N ! r ~ 6.86 ' 6.35 ' The CNX 35 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled


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    PDF CNX35 CNX35 CNX3540% E50151 C1686 C1679 C1680 CNX35 equivalent

    Untitled

    Abstract: No abstract text available
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT277 PACKAGE DIMENSIONS DESCRIPTION! The MCT277 ¡s a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.


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    PDF MCT277 E50151 C1686 C1679 C1243

    CHY17f-2

    Abstract: CHY17F-1 CNY17F-3 CNY17F-2 CHY17 CNY17F3 transistor 2z
    Text: M QUALITY •[TECHNOLOGIES VDE APPROVED ph o to tr a h sisto r o pto c o u pler s CNY17F1/1Z CNY17F2/2Z CNY17F3/3Z d e s c r ip t io n p a c k a g e d im e m s io h s [ft rft The CNY17 series consists o f a Gallium Arsenide IRED coupled w ith an NPN phototransistor.


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    PDF CNY17F1/1Z CNY17F2/2Z CNY17F3/3Z CNY17 CNY17F1: CNY17F2: CNY17F3: E50151 C2090 CHY17F1/1Z CHY17f-2 CHY17F-1 CNY17F-3 CNY17F-2 CHY17 CNY17F3 transistor 2z

    mca2255

    Abstract: smd TRANSISTOR code AJ
    Text: DUALITY'TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D • TMbtaSl 0003435 VDE APPROVED PHOTODARLINGTON OPTOCOUPLERS _ T - H I ~ 2 r MCA2230Z MCA2231Z MCA2255Z PACKAGE DIMENSIONS { ft rih Æj DESCRIPTION The MCA2230, MCA2231 and MCA2255 are


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    PDF MCA2230Z MCA2231Z MCA2255Z MCA2230, MCA2231 MCA2255 MCA2230 MCA2231, MCT9001 smd TRANSISTOR code AJ

    C1681

    Abstract: transistor c1684 c1685 NPN C1685 transistor t051
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT272 PACKAGE DIMENSION! The MCT272 is a phototransistor-type optically coupled Isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r ~ 6.86 6.35


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    PDF MCT272 MCT272 Ratio--75% time--10 E50151 C2090 C1683 C1684 C1294 C1681 transistor c1684 c1685 NPN C1685 transistor t051

    C1685 R transistor

    Abstract: a38 TRANSISTOR TRANSISTOR C1685
    Text: QUALITY TECHNOLOGIES VDE a p p r o v e d 1 p h o t o t r a n s is t o r o p t o c o u p l e r s MCT2200/0Z MCT2201/1Z MCT2202/2Z 'dv e\ DESCRIPTION r 6.86 The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide infrared emitting diode is selectively coupled with an


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    PDF MCT2200/0Z MCT2201/1Z MCT2202/2Z MCT2200, MCT2201 MCT2202 C2090 MCT2200--20 MCT2201-- C1685 R transistor a38 TRANSISTOR TRANSISTOR C1685

    C1243

    Abstract: C2090
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS MCT276 PACKAGE IENSIONS The MCT276 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode Is selectively coupled with a high speed NPN silicon phototransistor. r~ 6.86


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    PDF MCT276 MCT276 E5015CAL C1686 C1679 C1680 C1243 C1243 C2090

    C812

    Abstract: 02958 C811 diode TRANSISTOR c816 transistor c2090 CB20 C2090 C2079 C811 C816
    Text: MCT2 PACKAGE DIMENSIONS Æ DESCRIPTION T h e M C T 2 is a N P N silicon p lan ar ph ototransistor o p tically coup led to a gallium arsenide infrared e m itting diode. tSb FEATURES AND APPLICATIONS 7,62 300) REF 8.33 (-330) • ■ ■ ■ ■ ■ ■ ■


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    PDF C2090 C2079 8100K -40mA C812 02958 C811 diode TRANSISTOR c816 transistor c2090 CB20 C2090 C2079 C811 C816

    c1813

    Abstract: C1811 C1814 transistor 1201 1203 1205 tr c1815 transistor c1813 C1809 C1941 transistor c1816 C1810
    Text: QUALITY TECHNOLOGIES HIGH-PERFORMANCE AIGaAs PHOTOTRANSISTOR OPTOCOUPLERS • 1 —- MCT5200 MCT5201 PACKAGE DIMENSIONS DESCRIPTION The M CT520X are high performance logic compatible phototransistor type optically coupled isolator products. They are constructed using a very low degradation and


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    PDF MCT5200 MCT5201 CT520X C1819 c1813 C1811 C1814 transistor 1201 1203 1205 tr c1815 transistor c1813 C1809 C1941 transistor c1816 C1810

    Untitled

    Abstract: No abstract text available
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT270 PACKAGE DIMENSION! DESCRIPTION The M CT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.


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    PDF MCT270 MCT270 2500VAC 3000VAC E50151 C2090 C1681 C1682 C1683 C1684

    C1684 r

    Abstract: C1684R C1680 C1685 R transistor
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT274 PACKAGE DIMENSIONS The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN high-gain silicon phototransistor. r ~


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    PDF MCT274 MCT274 E50151 C2090 C1681 C1682 C1684 C1683 100/is C1685 C1684 r C1684R C1680 C1685 R transistor

    transistor c1684

    Abstract: CNY17-3 CNY-17-3 c1685
    Text: QUALITY •[TECHNOLOGIES VDE APPROVED p h o t o t r a n s is t o r o p t o c o u p l e r s CNY17-1/1Z CNY17-3/3Z CNY17-2/2Z CNY17-4/4Z PACKAGE DIMENSIONS tft DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor.


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    PDF CNY17-1/1Z CNY17-3/3Z CNY17-2/2Z CNY17-4/4Z CNY17 78TYp C2090 CNY17-1: CNY17-2: CNY17-3: transistor c1684 CNY17-3 CNY-17-3 c1685