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    TRANSISTOR C208 Search Results

    TRANSISTOR C208 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C208 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BTC3906M3

    Abstract: 01673
    Text: CYStech Electronics Corp. Spec. No. : C208M3 Issued Date : 2003.08.18 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTC3906M3 Description The BTC3906M3 is designed for general purpose applications requiring high breakdown voltage.


    Original     		PDF C208M3 BTC3906M3 BTC3906M3 BTA1514M3 OT-89 UL94V-0 01673

    n5551 transistor

    Abstract: n5551 BTN5551A3 BTP5401A3
    Text: CYStech Electronics Corp. Spec. No. : C208A3 Issued Date : 2003.06.06 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN5551A3 Description The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage.


    Original     		PDF C208A3 BTN5551A3 BTN5551A3 BTP5401A3 UL94V-0 n5551 transistor n5551 BTP5401A3

    BTC3906L3

    Abstract: No abstract text available
    Text: CYStech Electronics Corp. Spec. No. : C208L3 Issued Date : 2004.09.21 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTC3906L3 Description The BTC3906L3 is designed for general purpose applications requiring high breakdown voltage.


    Original     		PDF C208L3 BTC3906L3 BTC3906L3 BTA1514L3 OT-223 UL94V-0

    BTC3906M3

    Abstract: No abstract text available
    Text: CYStech Electronics Corp. Spec. No. : C208M3 Issued Date : 2003.08.18 Revised Date :2006.12.04 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC3906M3 Description The BTC3906M3 is designed for general purpose applications requiring high breakdown voltage.


    Original     		PDF C208M3 BTC3906M3 BTC3906M3 BTA1514M3 OT-89 UL94V-0

    BTN5551N3

    Abstract: BTP5401N3 sot-23 MARKING CODE G1
    Text: CYStech Electronics Corp. Spec. No. : C208N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN5551N3 Description The BTN5551N3 is designed for general purpose applications requiring high breakdown voltage.


    Original     		PDF C208N3-H BTN5551N3 BTN5551N3 BTP5401N3 OT-23 UL94V-0 BTP5401N3 sot-23 MARKING CODE G1

    BTA1514N3

    Abstract: BTC3906N3
    Text: Spec. No. : C208N3 Issued Date : 2002.05.11 Revised Date : 2005.01.12 Page No. : 1/4 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC3906N3 Description The BTC3906N3 is designed for general purpose applications requiring high breakdown voltage.


    Original     		PDF C208N3 BTC3906N3 BTC3906N3 BTA1514N3 OT-23 UL94V-0 BTA1514N3

    BTC3906L3

    Abstract: BTA1514L3 IC DATE CODE marking G1 BT-C39
    Text: CYStech Electronics Corp. Spec. No. : C208L3 Issued Date : 2004.09.21 Revised Date : 2006.12.26 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC3906L3 Description The BTC3906L3 is designed for general purpose applications requiring high breakdown voltage.


    Original     		PDF C208L3 BTC3906L3 BTC3906L3 BTA1514L3 OT-223 UL94V-0 BTA1514L3 IC DATE CODE marking G1 BT-C39

    BTA1579S3

    Abstract: BTC4102S3 e1 IC sot323
    Text: Spec. No. : C208S3 Issued Date : 2003.06.11 Revised Date : Page No. : 1/4 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC4102S3 Description The BTC4102S3 is designed for high voltage amplification application. Features • High breakdown voltage. BVCEO=120V


    Original     		PDF C208S3 BTC4102S3 BTC4102S3 BTA1579S3 OT-323 UL94V-0 BTA1579S3 e1 IC sot323

    TL139

    Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
    Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PDF PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145

    TRANSISTOR C802

    Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw

    Untitled

    Abstract: No abstract text available
    Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz


    Original     		PDF PTFB213004F PTFB213004F 300-watt H-37275-6/2

    VdS 2093 2009

    Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114
    Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz


    Original     		PDF PTFB213004F PTFB213004F 300-watt H-37275-6/2 VdS 2093 2009 TL2014 transistor c114 chip transistor c114 diagram TL243 TL145 tl1571 TL1621 transistor c114

    C801

    Abstract: 1/db3 c801
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 C801 1/db3 c801

    TL272

    Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
    Text: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty


    Original     		PDF PTFB201402FC PTFB201402FC H-37248-4 17ubstances. TL272 tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O

    TRANSISTOR C802

    Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PDF PTFB183408SV PTFB183408SV 340-watt

    TL225

    Abstract: ATC100A6R2CW150X
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 TL225 ATC100A6R2CW150X

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.


    Original     		PDF PTFB183408SV PTFB183408SV 340-watt

    Ceramic Surface Mount Amplifiers

    Abstract: SURFACE MOUNT rf TRANSFORMER AM05-0005 AM05-0005-TB AM05-0006 AM05-0006-TB C2084
    Text: C2084 Application Notes Ceramic Surface Mount Amplifiers V 2.00 1. Introduction M/A-COM’s Ceramic Surface Mount amplifier platform offers superior intermodulation performance for IF amplifiers in a commercial LGA Land Grid Array package. This design approach integrates coupler


    Original     		PDF C2084 AM05-0006 AM05-0006-TB AM05-0005 AM05-0005-TB AM05-000Drawing C2084 AM05-0005/6 Ceramic Surface Mount Amplifiers SURFACE MOUNT rf TRANSFORMER AM05-0005 AM05-0005-TB AM05-0006 AM05-0006-TB

    C2084

    Abstract: AM05-0006 AM05-0005 AM05-0005-TB AM05-0006-TB
    Text: Application Note C2084 Ceramic Surface Mount Amplifier Rev. V3 1. Introduction M/A-COM’s Ceramic Surface Mount amplifier platform offers superior intermodulation performance for IF amplifiers in a commercial LGA Land Grid Array package. This design approach


    Original     		PDF C2084 AM05-0006 AM05-0006-TB AM05-0005 AM05-0005-TB AM05-000reserve AM05-0005/6 C2084 AM05-0006 AM05-0005 AM05-0005-TB AM05-0006-TB

    ST1736

    Abstract: optocouplers H11B1
    Text: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS H11B1 H11B2 H11B3 PACKAGE DIMENSIONS DESCRIPTION The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-line package. ft ft ft FEATURES


    OCR Scan     		PDF H11B1 H11B2 H11B3 H11B3 E90700 H11B1) H11B2) H11B3) ST1736 optocouplers H11B1

    MCA255

    Abstract: MCA230 mca231 MCA255 equivalent
    Text: QUALITY TECHNOLOGIES PHOTODARLINGTON OPTOCOUPLERS MCA230 MCA231 MCA255 DESCRIPTION The MCA230, MCA231 and MCA255 are photodarlington optically coupled isolators. An infrared emitting diode coupled with a silicon photodarlington transistor. The device is supplied in a standard plastic


    OCR Scan     		PDF MCA230 MCA231 MCA255 MCA230, MCA255 MCA230/255 C2090 MCA255 equivalent

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp