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    TRANSISTOR C203 Search Results

    TRANSISTOR C203 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C203 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BTNA14N3

    Abstract: No abstract text available
    Text: CYStech Electronics Corp. Spec. No. : C214N3-H Issued Date : 2002.05.11 Revised Date : 2002.12.23 Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTNA14N3 Description • The BTNA14N3 is a darlington amplifier transistor • Complementary to BTPA64N3.


    Original     		C214N3-H BTNA14N3 BTNA14N3 BTPA64N3. OT-23 UL94V-0 PDF

    BTA1036S3

    Abstract: BTC2411S3
    Text: CYStech Electronics Corp. Spec. No. : C203S3-R Issued Date : 2003.11.18 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTC2411S3 Description • The BTC2411S3 is designed for general purpose amplifier applications. It is housed in the


    Original     		C203S3-R BTC2411S3 BTC2411S3 OT-323/SC-70 BTA1036S3 OT-323 UL94V-0 BTA1036S3 PDF

    IC380

    Abstract: BTC2411L3
    Text: Spec. No. : C203L3 Issued Date : 2005.02.22 Revised Date : Page No. : 1/4 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC2411L3 Description • The BTC2411L3 is designed for using in driver stage of AF amplifier and general purpose switching


    Original     		C203L3 BTC2411L3 BTC2411L3 500mA/50mA. BTA1036L3. OT-223 UL94V-0 IC380 PDF

    BTA1036N3

    Abstract: BTC2411N3
    Text: CYStech Electronics Corp. Spec. No. : C203N3 Issued Date : 2002.05.11 Revised Date : 2005.03.09 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC2411N3 Description • The BTC2411N3 is designed for using in driver stage of AF amplifier and general purpose switching


    Original     		C203N3 BTC2411N3 BTC2411N3 500mA/50mA. BTA1036N3. OT-23 UL94V-0 BTA1036N3 PDF

    IC380

    Abstract: BTA1036N3 BTC2411N3 C203N BTA1036
    Text: CYStech Electronics Corp. Spec. No. : C203N3 Issued Date : 2002.05.11 Revised Date : 2005.12.20 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC2411N3 Description • The BTC2411N3 is designed for using in driver stage of AF amplifier and general purpose switching


    Original     		C203N3 BTC2411N3 BTC2411N3 500mA/50mA. BTA1036N3. OT-23 UL94V-0 IC380 BTA1036N3 C203N BTA1036 PDF

    TRANSISTOR 2N 4401

    Abstract: 2N4401A3 2N4403A3 4401b
    Text: Spec. No. : C203A3 Issued Date : 2003.06.06 Revised Date : 2005.03.09 Page No. : 1/4 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor 2N4401A3 Description • The 2N4401A3 is designed for using in driver stage of AF amplifier and general purpose switching


    Original     		C203A3 2N4401A3 2N4401A3 500mA/50mA 2N4403A3. UL94V-0 TRANSISTOR 2N 4401 2N4403A3 4401b PDF

    BTN4401N3

    Abstract: BTP4403N3 IC DATE CODE
    Text: Spec. No. : C203N3-H Issued Date : 2003.06.06 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN4401N3 Description • The BTN4401N3 is designed for using in driver stage of AF amplifier and general purpose switching


    Original     		C203N3-H BTN4401N3 BTN4401N3 500mA/50mA BTP4403N3. OT-23 UL94V-0 BTP4403N3 IC DATE CODE PDF

    2N44

    Abstract: 2N4401A3 4401b C203A 2N440 TRANSISTOR 2N 4401 2N4403A3 2N4401B 4 npn transistor ic 2n 4401
    Text: Spec. No. : C203A3 Issued Date : 2003.06.06 Revised Date : 2005.10.25 Page No. : 1/4 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor 2N4401A3 Description • The 2N4401A3 is designed for using in driver stage of AF amplifier and general purpose switching


    Original     		C203A3 2N4401A3 2N4401A3 500mA/50mA 2N4403A3. UL94V-0 2N44 4401b C203A 2N440 TRANSISTOR 2N 4401 2N4403A3 2N4401B 4 npn transistor ic 2n 4401 PDF

    BTA1577S3

    Abstract: BTC4097S3
    Text: CYStech Electronics Corp. Spec. No. : C203S3 Issued Date : 2002.05.11 Revised Date : 2002.11.01 Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTC4097S3 Description • The BTC4097S3 is designed for use in driver stage of AF amplifier and general purpose


    Original     		C203S3 BTC4097S3 BTC4097S3 500mA/50mA BTA1577S3. OT-323 UL94V-0 BTA1577S3 PDF

    transistor c2030

    Abstract: C2030 PT100M NPN transistor ECB TO-92 transistor c316 date for ic component C316 NPN transistor ECB TO-92 500ma 1A
    Text: CYStech Electronics Corp. Spec. No. : C316 Issued Date : 2005.12.21 Revised Date : 2006.04.03 Page No. : 1/9 General Purpose NPN Epitaxial Planar Transistor BTC2030A3 Features • High breakdown voltage, BVCEO≥ 200V • Large continuous collector current capability


    Original     		BTC2030A3 UL94V-0 transistor c2030 C2030 PT100M NPN transistor ECB TO-92 transistor c316 date for ic component C316 NPN transistor ECB TO-92 500ma 1A PDF

    TL113

    Abstract: tl201 TL217 w3 smd transistor transistor c111
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200


    Original     		PTFA220081M PTFA220081M PG-SON-10 TL113 tl201 TL217 w3 smd transistor transistor c111 PDF

    capacitor marking c106

    Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200


    Original     		PTFA220081M PTFA220081M capacitor marking c106 NFM18Ps105 TL217 NFM18PS105R0J3 TL222 Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA PDF

    c102 TRANSISTOR

    Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200


    Original     		PTFA220081M PTFA220081M PG-SON-10 c102 TRANSISTOR c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113 PDF

    TL139

    Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
    Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz


    Original     		PTFB213004F PTFB213004F 300-watt H-37275-6/2 PDF

    VdS 2093 2009

    Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114
    Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz


    Original     		PTFB213004F PTFB213004F 300-watt H-37275-6/2 VdS 2093 2009 TL2014 transistor c114 chip transistor c114 diagram TL243 TL145 tl1571 TL1621 transistor c114 PDF

    C801

    Abstract: 1/db3 c801
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PTFA220121M PTFA220121M 12-watt PG-SON-10 C801 1/db3 c801 PDF

    TL272

    Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
    Text: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty


    Original     		PTFB201402FC PTFB201402FC H-37248-4 17ubstances. TL272 tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O PDF

    c102 TRANSISTOR

    Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113 PDF

    TRANSISTOR C802

    Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PTFB183408SV PTFB183408SV 340-watt PDF

    TL225

    Abstract: ATC100A6R2CW150X
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PTFA220121M PTFA220121M 12-watt PG-SON-10 TL225 ATC100A6R2CW150X PDF

    c102 TRANSISTOR

    Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PTFA220041M PTFA220041M PG-SON-10 c102 TRANSISTOR LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PDF

    transistor c735

    Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PTFA220041M PTFA220041M PG-SON-10 transistor c735 ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103 PDF