TRANSISTOR C202 Search Results

TRANSISTOR C202 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR C202 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
C151 Abstract: C202 RS21501 RS23301 RS23603 Text: PRODUCT SUMMARY RS23301: Heterojunction Bipolar Transistor Power Amplifier For Personal Handyphone Systems APPLICATIONS DESCRIPTION • PHS handsets The RS23301 Heterojunction Bipolar Transistor HBT Power Amplifier (PA) is part of Skyworks' Personal Handyphone	Original	RS23301: RS23301 03140A C151 C202 RS21501 RS23603	PDF
marking 1F SOT323 Abstract: MARKING LP SOT-323 e1 IC sot323 Text: CYStech Electronics Corp. Spec. No. : C202S3S Issued Date : 2002.05.11 Revised Date : 2006.08.17 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC4081S3S Description • The BTC4081S3S is designed for using in driver stage of AF amplifier and general purpose	Original	C202S3S BTC4081S3S BTC4081S3S BTA1576S3S OT-323 UL94V-0 marking 1F SOT323 MARKING LP SOT-323 e1 IC sot323	PDF
BTA1576S3 Abstract: BTC4081S3 Text: CYStech Electronics Corp. Spec. No. : C202S3 Issued Date : 2002.05.11 Revised Date : 2002.11.26 Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTC4081S3 Description • The BTC4081S3 is designed for using in driver stage of AF amplifier and general purpose	Original	C202S3 BTC4081S3 BTC4081S3 BTA1576S3 OT-323 UL94V-0 BTA1576S3	PDF
BTC2412N3 Abstract: BTA1037N3 sot-23 marking code C4 mold compound COB Text: CYStech Electronics Corp. Spec. No. : C202N3 Issued Date : 2002.05.11 Revised Date : 2005.12.20 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC2412N3 Description • The BTC2412N3 is designed for using in driver stage of AF amplifier and general purpose switching	Original	C202N3 BTC2412N3 BTC2412N3 BTA1037N3. OT-23 UL94V-0 BTA1037N3 sot-23 marking code C4 mold compound COB	PDF
BTA1037N3 Abstract: BTC2412N3 Text: CYStech Electronics Corp. Spec. No. : C202N3 Issued Date : 2002.05.11 Revised Date : 2002.10.31 Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTC2412N3 Description • The BTC2412N3 is designed for using in driver stage of AF amplifier and general purpose	Original	C202N3 BTC2412N3 BTC2412N3 BTA1037N3 OT-23 UL94V-0 BTA1037N3	PDF
d2493 Abstract: c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852 Text: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10	Original	A1186. A1215. A1216. A1262. A1294. A1295. A1303. A1386/A A1488/A A1492. d2493 c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852	PDF
c4381 Abstract: D2493 c4467 c4468 C4131 c4467 a1694 C3519 c3852 C3834 d2494 Text: Contents Transistor Selection Guide .2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10	Original	A1186. A1215. A1216. A1262. A1294. A1295. A1303. A1386/A A1488/A A1492. c4381 D2493 c4467 c4468 C4131 c4467 a1694 C3519 c3852 C3834 d2494	PDF
D2641 Abstract: c4381 transistor A114 C5239 b1686 c4517 C4131 C3284 c4467 C4300 Text: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10	Original	A1186. A1215. A1216. A1262. A1294. A1295. A1303. A1386/A A1488/A A1492. D2641 c4381 transistor A114 C5239 b1686 c4517 C4131 C3284 c4467 C4300	PDF
TL113 Abstract: tl201 TL217 w3 smd transistor transistor c111 Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200	Original	PTFA220081M PTFA220081M PG-SON-10 TL113 tl201 TL217 w3 smd transistor transistor c111	PDF
capacitor marking c106 Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200	Original	PTFA220081M PTFA220081M capacitor marking c106 NFM18Ps105 TL217 NFM18PS105R0J3 TL222 Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA	PDF
c102 TRANSISTOR Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113 Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200	Original	PTFA220081M PTFA220081M PG-SON-10 c102 TRANSISTOR c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113	PDF
TL139 Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145	PDF
TRANSISTOR C802 Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw	PDF
Untitled Abstract: No abstract text available Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz	Original	PTFB213004F PTFB213004F 300-watt H-37275-6/2	PDF

C801 Abstract: 1/db3 c801 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 C801 1/db3 c801	PDF
TL272 Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O Text: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty	Original	PTFB201402FC PTFB201402FC H-37248-4 17ubstances. TL272 tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O	PDF
c102 TRANSISTOR Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113	PDF
TRANSISTOR C802 Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104	PDF
Untitled Abstract: No abstract text available Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PTFB183408SV PTFB183408SV 340-watt	PDF
TL225 Abstract: ATC100A6R2CW150X Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 TL225 ATC100A6R2CW150X	PDF
C4517 Abstract: c5287 C4138 a1695 power transistor transistor c4381 C4517A C3678 C3852A A1216 C2922 transistor c5287 Text: Transistor Selection Guide • VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A C5239 600 550 C3679 C4300 C4706 C3927 C4557 C3830 C4907 400 C4073 C4418 C4662 C5130 C3831 C3832 C3890 C4130 C4546 C4138 C4296 C3833 C4297 C5071 D2017 200 A1668	Original	C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A C5239 c5287 C4138 a1695 power transistor transistor c4381 C3852A A1216 C2922 transistor c5287	PDF
MC2003 Abstract: MC2000 MC2023 MC2002 MC2100 MC2052 MC2124 MC2073 MC2112 MC2153 Text: INTEGRATED CIRCU ITS FROM MOTOROLA mm oo M C2000 Series 0 to +75°C M C2100 Series (—55 to +125°C) M T T L II integrated circu its co m prise a fa m ily o f transistor-transistor logic designed fo r general pu rpo se digital applications. T h e fa m ily has a high o pe ratin g speed <30-50	OCR Scan	MC2000 MC2100 MC2028/MC2078 MC2128/MC2178 MC2003 MC2023 MC2002 MC2052 MC2124 MC2073 MC2112 MC2153	PDF
2n189 Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152 Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits	OCR Scan	2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152	PDF
transistor 2N4 Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748 Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION	OCR Scan		PDF

TRANSISTOR C202 Search Results

TRANSISTOR C202 Result Highlights (5)

TRANSISTOR C202 Datasheets Context Search

C151

marking 1F SOT323

BTA1576S3

BTC2412N3

BTA1037N3

d2493

c4381

D2641

TL113

capacitor marking c106

c102 TRANSISTOR

TL139

TRANSISTOR C802

Untitled

C801

TL272

c102 TRANSISTOR

TRANSISTOR C802

Untitled

TL225

C4517

MC2003

2n189

transistor 2N4