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    TRANSISTOR C1P Search Results

    TRANSISTOR C1P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C1P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HAT1058C

    Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,


    Original     		PDF notic50 SON3024-8 HAT1062G ADE-A08-003Q HAT1058C HAT2106G HAT1068C Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23

    CMPT2222

    Abstract: CMPT2222A CMPT2222AE X10-4
    Text: CMPT2222AE ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications,


    Original     		PDF CMPT2222AE CMPT2222AE CMPT2222A OT-23 150mA, X10-4 CMPT2222 X10-4

    CMPT2222A

    Abstract: C1P TRANSISTOR
    Text: Central TM Semiconductor Corp. CMPT2222A NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and


    Original     		PDF CMPT2222A CMPT2222A OT-23 150mA, x10-4 C1P TRANSISTOR

    C1P TRANSISTOR

    Abstract: marking C1P CMPT2222A marking codes transistors sot-23 26 marking r4 diode on semiconductor marking code sot transistor marking c transistor c1p 4 npn transistor ic NPN transistors sot-23 26
    Text: CMPT2222A NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general purpose and switching


    Original     		PDF CMPT2222A CMPT2222A OT-23 150mA, X10-4 C1P TRANSISTOR marking C1P marking codes transistors sot-23 26 marking r4 diode on semiconductor marking code sot transistor marking c transistor c1p 4 npn transistor ic NPN transistors sot-23 26

    C1P TRANSISTOR

    Abstract: c1P sot marking C1P CMPT2222A transistor c1p X10-4
    Text: CMPT2222A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general


    Original     		PDF CMPT2222A OT-23 150mA, X10-4 C1P TRANSISTOR c1P sot marking C1P CMPT2222A transistor c1p X10-4

    Untitled

    Abstract: No abstract text available
    Text: CMPT2222A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general


    Original     		PDF CMPT2222A OT-23 150mA, X10-4

    CMPT2222A

    Abstract: CMPT2222AE X10-4
    Text: CMPT2222AE ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications, interface


    Original     		PDF CMPT2222AE CMPT2222A OT-23 150mA, X10-4 CMPT2222AE X10-4

    Untitled

    Abstract: No abstract text available
    Text: CMPT2222AE ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications, interface


    Original     		PDF CMPT2222AE CMPT2222A OT-23 150mA, X10-4

    CMPT2222

    Abstract: CMPT2222A CMPT2222AE X10-4
    Text: Central CMPT2222AE ENHANCED SPECIFICATION NPN SILICON TRANSISTOR ENHANCED SPECIFICATION MAXIMUM RATINGS: TA=25°C ♦ Collector-Base Voltage ♦ Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature


    Original     		PDF CMPT2222AE CMPT2222AE CMPT2222A OT-23 150mA, X10-4 CMPT2222 X10-4

    K1P DIODES

    Abstract: MMBT2222AQ-7-F K1P single transistor NPN K1P transistor marking 1p Z K1P SOT23
    Text: MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT2907A Ideal for Low Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)


    Original     		PDF MMBT2222A MMBT2907A) AEC-Q101 J-STD-020 MIL-STD202, DS30041 K1P DIODES MMBT2222AQ-7-F K1P single transistor NPN K1P transistor marking 1p Z K1P SOT23

    "dummy load"

    Abstract: C1005X5R0J105K C1005X5R1E104K C1608X5R0J106M C3216X5R1C106M C3216X7R1H105K MAX8784
    Text: 19-0787; Rev 0; 3/07 MAX8784 Evaluation Kit The MAX8784 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that provides the voltages and features required for active-matrix, thin-film transistor (TFT) liquid-crystal display (LCD) panels in


    Original     		PDF MAX8784 MAX8784 "dummy load" C1005X5R0J105K C1005X5R1E104K C1608X5R0J106M C3216X5R1C106M C3216X7R1H105K

    HIGH-VOLTAGE OPERATIONAL AMPLIFIER

    Abstract: No abstract text available
    Text: 19-0737; Rev 0; 1/07 KIT ATION EVALU E L B AVAILA Step-Up Regulator, Internal Charge Pumps, Switch Control, and Operational Amplifier for TFT LCDs The MAX8784 generates supply rails for the thin-film transistor TFT liquid-crystal display (LCD) panels in TVs


    Original     		PDF MAX8784 HIGH-VOLTAGE OPERATIONAL AMPLIFIER

    C1005X5R0J105K

    Abstract: C1608X5R0J106M C3216X5R1C106M CMS02 MAX8784 MMBD4148SE Diode, Dual Schottky, 30A, 45-V TFT TCON 4.5V TO 100V INPUT REGULATOR
    Text: 19-0737; Rev 0; 1/07 KIT ATION EVALU E L B AVAILA Step-Up Regulator, Internal Charge Pumps, Switch Control, and Operational Amplifier for TFT LCDs The MAX8784 generates supply rails for the thin-film transistor TFT liquid-crystal display (LCD) panels in TVs


    Original     		PDF MAX8784 C1005X5R0J105K C1608X5R0J106M C3216X5R1C106M CMS02 MMBD4148SE Diode, Dual Schottky, 30A, 45-V TFT TCON 4.5V TO 100V INPUT REGULATOR

    diode FBL 030

    Abstract: MMBD4148SE C1608X5R0J106M CMS02 MAX8753 MAX8753ETI diagram Converter 24v to 12v 3.3v dc-dc converter toshiba VOLTAGE REGULATOR MARKing c2n C1N27
    Text: 19-3919; Rev 0; 1/06 KIT ATION EVALU E L B A AVAIL TFT LCD DC-DC Converter with Integrated Charge Pumps The MAX8753 quadruple-output DC-DC converter provides the regulated voltages required by active-matrix, thin-film transistor TFT , liquid-crystal displays (LCDs).


    Original     		PDF MAX8753 300mA diode FBL 030 MMBD4148SE C1608X5R0J106M CMS02 MAX8753ETI diagram Converter 24v to 12v 3.3v dc-dc converter toshiba VOLTAGE REGULATOR MARKing c2n C1N27

    Untitled

    Abstract: No abstract text available
    Text: Central" CMPT2222AE Sem iconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT NPN SILICON TRANSISTOR The Central Semiconductor CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications,


    OCR Scan     		PDF CMPT2222AE CMPT2222A OT-23 150mA,

    Untitled

    Abstract: No abstract text available
    Text: Central“ CMPT2222AE Semiconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT NPN SILICON TRANSISTOR The Central Semiconductor CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications,


    OCR Scan     		PDF CMPT2222AE CMPT2222A OT-23 100mA, 150mA,

    C1P TRANSISTOR

    Abstract: CMPT2222A LB-215
    Text: Central Semiconductor Corp. CMPT2222A DESCRIPTION: NPN SILICON TRANSISTOR The Central Semiconductor CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal,


    OCR Scan     		PDF CMPT2222A OT-23 150it 150mA, 26-September C1P TRANSISTOR LB-215

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: central" Semiconductor Corp. C M P T2222A NPN SILICON TRANSISTOR DESCRIPTION: T he CENTRAL SE M IC O N D U C T O R CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and


    OCR Scan     		PDF T2222A CMPT2222A OT-23 150mA' 150mA,

    Untitled

    Abstract: No abstract text available
    Text: Central Semiconductor Corp. CMPT2222A NPN SILICON TRANSISTOR DESCRIPTION: T he CENTRAL S E M IC O N D U C T O R C M P T2222Atype is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and


    OCR Scan     		PDF CMPT2222A OT-23 T2222Atype 150mA, 150mA

    CMPT2222A

    Abstract: ja ctb
    Text: Central" Semiconductor Corp. C M P T 2222A NPN SILICON TRANSISTOR DESCRIPTION: T he CENTRAL SE M IC O N D U C T O R CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general pu rpose and


    OCR Scan     		PDF CMPT2222A OT-23 CMPT2222A 150mA, ja ctb

    pt2222a

    Abstract: MARKING code oJ sot23 PT2222
    Text: TM C C M PT2222A e n t r a l Sem i c o n d u c t o r C o r p . NPN SILICON TRANSISTOR DESCRIPTION: The C ENTRAL S E M IC O N D U C TO R CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,


    OCR Scan     		PDF PT2222A CMPT2222A OT-23 pt2222a MARKING code oJ sot23 PT2222

    Philips FA 291

    Abstract: BUV28AF BUV28F
    Text: PHILIPS INTERNATIONAL 45E D a 711002b DD31DTS 2 C1PHIN BUV28F BUV28AF T-33-W SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated mounting base, intended for use in converters,' inverters, switching regulators, motor control


    OCR Scan     		PDF 711002b DD31DTS BUV28F BUV28AF OT186 D0031100 T-33-n Philips FA 291 BUV28AF

    V27AF

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL mse: » 7 iiQasb 0031005 t b IPHIN BUV27F BUV27AF o SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated mounting base, intended for use in converters, inverters, switching regulators, motor control


    OCR Scan     		PDF BUV27F BUV27AF OT186 OT186. 711GflBh 0G310TD T-33-07 V27AF