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    TRANSISTOR C1684 NPN Search Results

    TRANSISTOR C1684 NPN Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C1684 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor c1684

    Abstract: h11av2 equivalent H11AVI OPTOCOUPLER 636 H11AV3 H11AV2A H11AV3A 113t CL685
    Text: QUALITY TECHNOLOGIES TRANSISTOR OUTPUT OPTOCOUPLER H11AV1 H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A PACKAGE DIMENSIONS I G.8G 6.36 I ¥ J W The H11AV series consists of a gallium arsenide infrared emitting diode coupled with an NPN silicon phototransistor in a dual-in-line package. The H11AV1A,


    OCR Scan     		PDF H11AV1 H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A H11AV H11AV1A, H11AV3A transistor c1684 h11av2 equivalent H11AVI OPTOCOUPLER 636 113t CL685

    Untitled

    Abstract: No abstract text available
    Text: su PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is


    OCR Scan     		PDF TIL111 TIL111 E90700 ST1603A C2079 74bbfi C1684 C1683 C1685 C1294

    C1679

    Abstract: C1680 C2079 MCT2200 MCT2201 MCT2202 C1682 transistor NPN C1685 C1685 transistor transistor c1684 NPN
    Text: tsO PHOTOTRANSISTOR OPTOCOUPLERS OPTOELEETBöHStS MCT2200 MCT2201 MCT2202 PACKAGE DIMENSIONS DESCRIPTION The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide infrared emitting diode is selectively coupled with an NPN


    OCR Scan     		PDF MCT2200 MCT2201 MCT2202 l2-54! C2079 STI603A MCT2200, E90700 C1679 C1680 C1682 transistor NPN C1685 C1685 transistor transistor c1684 NPN

    Untitled

    Abstract: No abstract text available
    Text: OPTOELECTRONICS I PHOTOTRANSISTOR OPTOCOUPLER MCT271 DESCRIPTION PACKAGE DIMENSIONS db & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.


    OCR Scan     		PDF MCT271 MCT271 E90700 C1682 C1681 C1683 C1684 C1296A 74bbfl51 C1294

    C1685 transistor

    Abstract: C1685 CNYI7-3 CNYI7 transistor ac 125 equivalent TRANSISTOR C1685 C1681 CNY17 transistor c1684 CNY17-2
    Text: LSU Wf JÊÊtÈk. \H| mmH PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSIONS DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. FEATURES WWW High isolation voltage


    OCR Scan     		PDF CNY17-1 CNY17-2 STI603A c2079 CNY17 CNY17-1: CNY17-2: CNY17-3: CNY17-4: C1683 C1685 transistor C1685 CNYI7-3 CNYI7 transistor ac 125 equivalent TRANSISTOR C1685 C1681 transistor c1684

    C1681

    Abstract: transistor c1684 c1685 NPN C1685 transistor t051
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT272 PACKAGE DIMENSION! The MCT272 is a phototransistor-type optically coupled Isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r ~ 6.86 6.35


    OCR Scan     		PDF MCT272 MCT272 Ratio--75% time--10 E50151 C2090 C1683 C1684 C1294 C1681 transistor c1684 c1685 NPN C1685 transistor t051

    C1685 transistor

    Abstract: C1685 R transistor H11A1Z transistor c1684 TRANSISTOR C1685 transistor c2090 C1685 C1682 transistor
    Text: QUALITY TECHNOLOGIES VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z T The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor in a standard plastic


    OCR Scan     		PDF H11A1 H11A1Z E50151 C2090 C1683 C1684 C1685 C1296A C1685 transistor C1685 R transistor H11A1Z transistor c1684 TRANSISTOR C1685 transistor c2090 C1685 C1682 transistor

    Untitled

    Abstract: No abstract text available
    Text: QUALITY TECHNOLOGIES • MCT271 The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r f t tSi rSi t 6.86 ww ' 6.35 1 _ 8.89 ■ Controlled Current Transfer Ratio— 45% to 90%


    OCR Scan     		PDF MCT271 MCT271 C2090 E50151 C1681 C1682 C1684 C1683 C1296A C1294

    GNY17-3

    Abstract: CNV17 NPN C1685 c1685 C1685 npn GNY17 C1684 C1685 transistor CNY17-2 C1243
    Text: [«51 PHOTOTRANSISTOR OPTOCOUPLERS OPTOE L E CTRONI CS CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSIONS DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. rib rih rSi FEATURES 1.9 TYP ~ ï— 4.06 J twLTI


    OCR Scan     		PDF CNY17-1 CNY17-3 CNY17-2 CNY17-4 ST1603A C2079 CNY17 CNY17-1: CNY17-2: CNY17-3: GNY17-3 CNV17 NPN C1685 c1685 C1685 npn GNY17 C1684 C1685 transistor C1243

    C1685 transistor

    Abstract: transistor c1684 C1681 C2079 KJh transistor TRANSISTOR C1685 C1679 C1680 C1686 MCT271
    Text: [ S PHOTOTRANSISTOR OPTOCOUPLER U OPTOELECTRONICS MCT271 DESCRIPTION PACKAGE DIMENSIONS & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.


    OCR Scan     		PDF MCT271 ST1603A C2079 E90700 C1682 C1683 C1684 C1685 C1296A C1685 transistor transistor c1684 C1681 C2079 KJh transistor TRANSISTOR C1685 C1679 C1680 C1686 MCT271

    C1684

    Abstract: C1683 C1681 transistor c1684 C1684 transistor transistor c1682 C1296A
    Text: C sö PHOTOTRANSISTOR OPTOCOUPLER DPTDELECîHGNiCS 1 MCT271 PACKAGE DIMENSIONS DESCRIPTION The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.


    OCR Scan     		PDF MCT271 MCT271 E90700 C1682 C1681 C1683 C1684 C1296A transistor c1684 C1684 transistor transistor c1682 C1296A

    CNY17 pulse circuit

    Abstract: C1685 transistor transistor c1684 opt 300 cny17-3 NPN C1685 c1685 CNY17-2 equivalent transistor C1681 cny171 11
    Text: s o PHOTOTRANSISTOR OPTOCOUPLERS M TK LEtm iltS CNY17-1 CNY17-3 CNY17-2 CNY17-4 DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. r& rfh dfe FEATURES High isolation voltage 5300 VAC RMS— 1 minute


    OCR Scan     		PDF CNY17-1 CNY17-3 CNY17-2 CNY17-4 CNY17 STI603A C2D79 CNY17-1: CNY17-2: CNY17-3; CNY17 pulse circuit C1685 transistor transistor c1684 opt 300 cny17-3 NPN C1685 c1685 equivalent transistor C1681 cny171 11

    C1684 r .85 transistor

    Abstract: transistor c1684
    Text: mm QUALITY PHOTOTRANSISTOR OPTOCOUPLER • [ te c h n o lo g ie s MCT275 DESCRIPTION The M CT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with a high voltage NPN silicon phototransistor.


    OCR Scan     		PDF MCT275 MCT275 E50151 C1683 C1684 C1685 C1284 C1296A C1684 r .85 transistor transistor c1684

    Untitled

    Abstract: No abstract text available
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT270 PACKAGE DIMENSION! DESCRIPTION The M CT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.


    OCR Scan     		PDF MCT270 MCT270 2500VAC 3000VAC E50151 C2090 C1681 C1682 C1683 C1684

    C1684 r

    Abstract: C1684R C1680 C1685 R transistor
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT274 PACKAGE DIMENSIONS The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN high-gain silicon phototransistor. r ~


    OCR Scan     		PDF MCT274 MCT274 E50151 C2090 C1681 C1682 C1684 C1683 100/is C1685 C1684 r C1684R C1680 C1685 R transistor

    transistor c1684

    Abstract: CNY17-3 CNY-17-3 c1685
    Text: QUALITY •[TECHNOLOGIES VDE APPROVED p h o t o t r a n s is t o r o p t o c o u p l e r s CNY17-1/1Z CNY17-3/3Z CNY17-2/2Z CNY17-4/4Z PACKAGE DIMENSIONS tft DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor.


    OCR Scan     		PDF CNY17-1/1Z CNY17-3/3Z CNY17-2/2Z CNY17-4/4Z CNY17 78TYp C2090 CNY17-1: CNY17-2: CNY17-3: transistor c1684 CNY17-3 CNY-17-3 c1685

    Untitled

    Abstract: No abstract text available
    Text: EU PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N35 4N36 4N37 DIMENSIONS DESCRIPTIO N The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEA TU R ES & APPLICATIONS


    OCR Scan     		PDF E90700 C1296A VCEat10 74bbfl51 000b033

    C2079

    Abstract: optocoupler mct2e transistor c1684 C16SE 1R10 diode C1684 C1684 transistor mct2e optocoupler Optocoupler IC MCT2E MCT2E equivalent
    Text: ^ 2 J5 E O - ^ I PHOTOTRANSISTOR OPTOCOUPLER 0PT0ELECTRD8ÍC3 MCT2E PACKAGE DIMENSIONS DESCRIPTION The MCT2E is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS I 2'5 4 ! 0.40 a n o d e JT


    OCR Scan     		PDF C2079 E90700 C129SA optocoupler mct2e transistor c1684 C16SE 1R10 diode C1684 C1684 transistor mct2e optocoupler Optocoupler IC MCT2E MCT2E equivalent

    C1685

    Abstract: C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor SMD Transistor 1c C1636 C1685 R transistor C1681 C1296A
    Text: ÖUALITY TECHNOLOGIES CORP B7E D QUALITY TECHNOLOGIES • 74bbflSl 0GQ3577 DUAL PHOTOTRANSISTOR OPTOCOUPLERS MCT6 MCT62 MCT61 MCT66 T -4 1 -8 3 DESCRIPTION PACKAGE DIMENSIONS The MCT6X optoisoiators have two channels for high density applications. For four channel applications,


    OCR Scan     		PDF 74bbflSl 0GQ3577 MCT62 MCT61 MCT66 16-pin C2091 MCT9001 C1685 C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor SMD Transistor 1c C1636 C1685 R transistor C1681 C1296A

    C1681

    Abstract: C1680 C1682 transistor C1243 C1686 MCT6 equivalent C1684 r .85 transistor C1682 MCT66 MCT66 QUALITY
    Text: QUALITY TECHNOLOGIES DUAL PHOTOTRANSISTOR OPTOCOUPLERS 1 MCT6 MCT62 MCT61 MCT66 DESCRIPTION The MCT6X optoisolators have two channels for high density applications. For four channel applications, two-packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor


    OCR Scan     		PDF MCT62 MCT61 MCT66 16-pin E50151 C1681 C1682 C1681 C1680 C1682 transistor C1243 C1686 MCT6 equivalent C1684 r .85 transistor C1682 MCT66 MCT66 QUALITY

    C1685

    Abstract: C1685 transistor C1681 NPN C1685 TRANSISTOR C1685 transistor c1684 C1684 C1684 transistor C1685 R transistor C1683
    Text: PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL 111 PACKAGE DIMENSIONS t r if I J_ max o w ® ^ . 8.89 8.38 J typ L ~ 1 r _ DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled


    OCR Scan     		PDF TIL111 ST1603A TIL111 E90700 C2079 C1682 C1684 C1296A C1683 C1685 C1685 C1685 transistor C1681 NPN C1685 TRANSISTOR C1685 transistor c1684 C1684 C1684 transistor C1685 R transistor C1683

    4N35 QUALITY TECHNOLOGIES

    Abstract: 4n35 equivalent C1684 r .85 transistor
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. t 6.86


    OCR Scan     		PDF E50151 TYP20 C1685 C1296A C1294 4N35 QUALITY TECHNOLOGIES 4n35 equivalent C1684 r .85 transistor

    C1685

    Abstract: TRANSISTOR C1685 transistor c1684 optocouplers 4n35 C1685 transistor C1681 NPN C1685 c1684 C1684 transistor 4N35
    Text: [sO PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS j Sl S u The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor o ptically coupled to a gallium arsenide infrared em itting diode.


    OCR Scan     		PDF C1296A 100/is C1294 C1685 TRANSISTOR C1685 transistor c1684 optocouplers 4n35 C1685 transistor C1681 NPN C1685 c1684 C1684 transistor 4N35

    NPN C1685

    Abstract: C1685 transistor
    Text: EO PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N35 4N36 4N37 PACKAGE DIMENSIONS DESCRIPTION Æ db tft The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.


    OCR Scan     		PDF E90700 NPN C1685 C1685 transistor