TRANSISTOR C1213 Search Results

TRANSISTOR C1213 Result Highlights (6)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

TRANSISTOR C1213 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
atc 17-33 Abstract: transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 capacitor siemens 4700 35 atc 1733 Text: PTF 10036 85 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 10036 is an internally matched, 85 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and full gold metallization ensure	Original	PDF	1-877-GOLDMOS 1301-PTF atc 17-33 transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 capacitor siemens 4700 35 atc 1733
transistor c1213 Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 transistor Rf C1213 Text: PTF 10009 85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10009 is an 85–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. This device operates at 50% efficiency with 13 dB gain. Nitride surface passivation and full	Original	PDF	1-877-GOLDMOS 1522-PTF transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 transistor Rf C1213
CHARACTERISTIC OF TRANSISTOR C1213 Abstract: transistor c1213 c1213 transistor transistor Rf C1213 G200 Text: PTF 10009 85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 50% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization	Original	PDF	1-877-GOLDMOS 1301-PTF CHARACTERISTIC OF TRANSISTOR C1213 transistor c1213 c1213 transistor transistor Rf C1213 G200
schematic diagram tv sony 21 trinitron Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112 Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV	Original	PDF	KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
10G EML eudyna Abstract: EML TOSA tosa Thermistor 10G EML TOSA TOSA 10G EML pcb fiber TRANSCEIVER CIRCUIT DIAGRAM rs232 EML DRIVER tosa flex cable design 0201 resistor 10 Gbps EML TOSA Text: Reference Design: HFRD-20.2 Rev. 5; 11/08 As of July, 2008 this reference design board is no longer available. Gerber files and schematics are available upon request. REFERENCE DESIGN 1310nm XFP Uncooled EML Transceiver Maxim Integrated Products Reference Design: XFP Transceiver	Original	PDF	HFRD-20 1310nm DS1862 DS3900) HFRD18 RS232 DS3900 HFRD-18 10G EML eudyna EML TOSA tosa Thermistor 10G EML TOSA TOSA 10G EML pcb fiber TRANSCEIVER CIRCUIT DIAGRAM rs232 EML DRIVER tosa flex cable design 0201 resistor 10 Gbps EML TOSA
transistor k1317 Abstract: K2225 k1317 transistors k2628 k1117 transistors K1317 k1118 k2225 transistor k1117 transistor transistor k1117 Text: AN1503/D ECLinPS and ECLinPS Lite SPICE Modeling Kit Prepared by Senad Lomigora, Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide customers with enough circuit schematic and SPICE parameter information	Original	PDF	AN1503/D r14525 transistor k1317 K2225 k1317 transistors k2628 k1117 transistors K1317 k1118 k2225 transistor k1117 transistor transistor k1117
K1117 Abstract: k2225 transistor K2225 k1317 K0217 TRANSISTOR K0312 K1618 K0311 transistor k1117 transistor k0319 Text: AN1503/D ECLinPS and ECLinPS Lite SPICE Modeling Kit Prepared by Senad Lomigora, Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide customers with enough circuit schematic and SPICE parameter information	Original	PDF	AN1503/D r14525 AN1503/D K1117 k2225 transistor K2225 k1317 K0217 TRANSISTOR K0312 K1618 K0311 transistor k1117 transistor k0319
transistors k2628 Abstract: k1118 k1317 k0317 k2225 transistor transistor k1317 k1117 k2225 transistor K2628 k2324 Text: AN1503/D ECLinPS and ECLinPS Lite SPICE Modeling Kit Prepared by Senad Lomigora, Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide customers with enough circuit schematic and SPICE parameter information	Original	PDF	AN1503/D r14525 transistors k2628 k1118 k1317 k0317 k2225 transistor transistor k1317 k1117 k2225 transistor K2628 k2324
k1117 Abstract: k2225 k2225 transistor k1117 transistor k1317 transistor k1317 transistor k1117 k1118 transistor k1213 k1213 Text: AN1503/D ECLinPS and ECLinPS Lite] SPICE Modeling Kit Prepared by Senad Lomigora, Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide customers with enough circuit schematic and SPICE parameter information	Original	PDF	AN1503/D r14525 k1117 k2225 k2225 transistor k1117 transistor k1317 transistor k1317 transistor k1117 k1118 transistor k1213 k1213
k2225 transistor Abstract: k1118 k1117 k1213 power transistor k1821 transistor k1213 k1117 transistor K2225 k1518 transistor k1117 Text: AN1560/D Low Voltage ECLinPS and ECLinPS Lite SPICE Modeling Kit 150Prepared by Senad Lomigora and Paul Shockman ON Semiconductor Broadband Application Engineers http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to extend the information given	Original	PDF	AN1560/D 150Prepared AN1503 k2225 transistor k1118 k1117 k1213 power transistor k1821 transistor k1213 k1117 transistor K2225 k1518 transistor k1117
transistor c1213 Abstract: c1213 transistor c1819 C1217 SY88236 R2526 TOSA ROsa TP8-10 c1213 SMD CAPACITORS color code Text: SY88232L and SY88236L Optical Evaluation Board General Description Features This evaluation board allows for checking the performance of the SY88236 burst mode laser driver and the continuous mode laser driver SY88232 while driving a FP or a DFB laser and its integrated post	Original	PDF	SY88232L SY88236L SY88236 SY88232 SY88236L-AL SY88232L-AL 21orized M9999-092409-A transistor c1213 c1213 transistor c1819 C1217 R2526 TOSA ROsa TP8-10 c1213 SMD CAPACITORS color code
Untitled Abstract: No abstract text available Text: LX1671/LX1672 CLQ MLPQ PACKAGE MULTIPLE OUTPUT LOADSHARETM PWM EVALUATION BOARD USERS GUIDE LX1671CPW, LX1671CLQ, LX1672-03CLQ, LX1672-03CPW, LX1672-05CPW, and LX1672-06CLQ are protected by U.S. Patents: 6,285,571 & 6,292,378 TM Copyright 2002 Revision 1.0, 2/24/2006	Original	PDF	LX1671/LX1672 LX1671CPW, LX1671CLQ, LX1672-03CLQ, LX1672-03CPW, LX1672-05CPW, LX1672-06CLQ LX1671
C2331 Abstract: LX1671 LX1671CLQ LX1671CPW LX1672 LX1672-03CLQ LX1672-03CPW LX1672-05CPW LX1672-06CLQ transistor c1213 Text: LX1671/LX1672 CLQ MLPQ PACKAGE MULTIPLE OUTPUT LOADSHARETM PWM EVALUATION BOARD USERS GUIDE LX1671CPW, LX1671CLQ, LX1672-03CLQ, LX1672-03CPW, LX1672-05CPW, and LX1672-06CLQ are protected by U.S. Patents: 6,285,571 & 6,292,378 TM Copyright 2002 Revision 1.0, 2/24/2006	Original	PDF	LX1671/LX1672 LX1671CPW, LX1671CLQ, LX1672-03CLQ, LX1672-03CPW, LX1672-05CPW, LX1672-06CLQ LX1671 C2331 LX1671CLQ LX1671CPW LX1672 LX1672-03CLQ LX1672-03CPW LX1672-05CPW transistor c1213
K1213 Abstract: k1518 transistor c1213 equivalent transistor k1213 k1112 K1113 k0305 k0205 k0309 equivalent k1117 Text: AN1560/D Low Voltage ECLinPS and ECLinPS Lite SPICE Modeling Kit Prepared by Senad Lomigora and Paul Shockman ON Semiconductor Broadband Application Engineers http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to extend the information given	Original	PDF	AN1560/D AN1503 r14525 K1213 k1518 transistor c1213 equivalent transistor k1213 k1112 K1113 k0305 k0205 k0309 equivalent k1117

3 phase bridge fully controlled rectifier Abstract: 1K Ohm resistor 1/8W 5V power supply using bridge rectifier circuit drawing of digital multimeter capacitor 470uf 16v bridge rectifier smd digital multimeter circuit 1206 smd resistor 1206 smd 100 ohm resistor 15A Adjustable Positive Voltage Regulator Text: LX1671/LX1672 CLQ MLPQ PACKAGE MULTIPLE OUTPUT LOADSHARETM PWM EVALUATION BOARD USERS GUIDE I N T E G R A T E D Copyright 2002 Revision 0.2d, 4/29/2004 P R O D U C T S LX1671 EVALUATION BOARD USER GUIDE TABLE OF CONTENTS	Original	PDF	LX1671/LX1672 LX1671 3 phase bridge fully controlled rectifier 1K Ohm resistor 1/8W 5V power supply using bridge rectifier circuit drawing of digital multimeter capacitor 470uf 16v bridge rectifier smd digital multimeter circuit 1206 smd resistor 1206 smd 100 ohm resistor 15A Adjustable Positive Voltage Regulator
c25 rectifier Abstract: LX1671 transistor c1213 kd smd transistor smd transistor 2d C25 02D FET Transistor Guide Variable resistor 10K ohm LX1672 CR78 diode Text: LX1671/LX1672 CLQ MLPQ PACKAGE MULTIPLE OUTPUT LOADSHARETM PWM EVALUATION BOARD USERS GUIDE I N T E G R A T E D Copyright 2002 Revision 0.2d, 8/8/2002 P R O D U C T S LX1671 EVALUATION BOARD USER GUIDE TABLE OF CONTENTS	Original	PDF	LX1671/LX1672 LX1671 c25 rectifier transistor c1213 kd smd transistor smd transistor 2d C25 02D FET Transistor Guide Variable resistor 10K ohm LX1672 CR78 diode
D100D Abstract: k1113 K1112 k1011 C1213A C1314A k0305 transistor c1013 k0308 K0216 Text: AND8077/D GigaCommt SiGe SPICE Modeling Kit Prepared by: Senad Lomigora and Paul Shockman http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide sufficient circuit schematic and SPICE parameter information to perform system level interconnect modeling for devices in	Original	PDF	AND8077/D D100D k1113 K1112 k1011 C1213A C1314A k0305 transistor c1013 k0308 K0216
D100D Abstract: C1213A transistor k1213 k1011 k0305 K0116 k1112 K1012 K0115 k1113 Text: AND8077/D GigaCommt SiGe SPICE Modeling Kit Prepared by: Senad Lomigora and Paul Shockman http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide sufficient circuit schematic and SPICE parameter information to perform system level interconnect modeling for devices in	Original	PDF	AND8077/D D100D C1213A transistor k1213 k1011 k0305 K0116 k1112 K1012 K0115 k1113
k1213 Abstract: K1118 k0312 k2225 transistor transistors k0317 transistors k2628 K1020 c1213 transistor transistor k1213 K1117 Text: AND8009/D ECLinPS Plus SPICE Modeling Kit Prepared by Senad Lomigora, Paul Shockman, Paul Hunt ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE Objective The Objective of this kit is to provide customers with enough circuit schematic and SPICE parameter information	Original	PDF	AND8009/D r14525 k1213 K1118 k0312 k2225 transistor transistors k0317 transistors k2628 K1020 c1213 transistor transistor k1213 K1117
C1923 transistor Abstract: transistor c1213 equivalent Transistor C1923 ceramic 1000p capacitors C1923 transistor c1213 TRANSISTOR C53 22P 0805 HIP6004 HIP6200 Text: Evaluation Tool Demonstrates DeCAPitator Performance HIP6200EVAL1 Application Note August 1998 AN9763.2 Author: Greg J. Miller Introduction The DeCAPitator is designed to reduce the number of bulk capacitors required at the output of a switching DC-DC	Original	PDF	HIP6200EVAL1) AN9763 HIP6200 12VIN HIP6200 SPCJ-123-01 C1923 transistor transistor c1213 equivalent Transistor C1923 ceramic 1000p capacitors C1923 transistor c1213 TRANSISTOR C53 22P 0805 HIP6004
Transistor C1923 Abstract: transistor c1213 equivalent C1923 transistor C1923 Switching Regulator 8-SOIC dc-dc 3a mmbt2222alt CR78 C4050 c1213 transistor 1N4148 SOD-123 Text: Harris Semiconductor No. AN9763.1 Harris Intelligent Power March 1998 Evaluation Tool Demonstrates DeCAPitator Performance HIP6200EVAL1 Author: Greg J. Miller Introduction stage is a high edge-rate transient generator capable of producing 8A (or higher) transients. A block diagram of the	Original	PDF	AN9763 HIP6200EVAL1) HIP6200 SPCJ-123-01 C19-23, C40-50 R6-16, R24-34, 12VIN, Transistor C1923 transistor c1213 equivalent C1923 transistor C1923 Switching Regulator 8-SOIC dc-dc 3a mmbt2222alt CR78 C4050 c1213 transistor 1N4148 SOD-123
transistor c1213 Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 C1213 jmc 5701 Text: ERICSSON ^ PTF 10009 85 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10009 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 85 watts minimum output power. Nitride surface	OCR Scan	PDF	20AWG, transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 C1213 jmc 5701
atc 17-33 Abstract: atc 1733 860-960MHz Text: ERICSSON ^ PTF 10036 85 Watts, 860-960 MHz LDMOS Field Effect Transistor Description The 10036 is an internally matched, common source n-channel, enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 960 MHz. It is rated at 85 watts minimum output	OCR Scan	PDF
transistor c1213 Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 1606 mosfet Text: ERICSSON í PTE 10036* 85 Watts, 8 6 0 - 9 0 0 MHz L D M O S Field Effect Transistor Description The 10036 is an internally matched, common source n-channel, enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 85 watts minimum output	OCR Scan	PDF

TRANSISTOR C1213 Search Results

TRANSISTOR C1213 Result Highlights (6)

TRANSISTOR C1213 Datasheets Context Search

atc 17-33

transistor c1213

CHARACTERISTIC OF TRANSISTOR C1213

schematic diagram tv sony 21 trinitron

10G EML eudyna

transistor k1317

K1117

transistors k2628

k1117

k2225 transistor

transistor c1213

Untitled

C2331

K1213

3 phase bridge fully controlled rectifier

c25 rectifier

D100D

D100D

k1213

C1923 transistor

Transistor C1923

transistor c1213

atc 17-33

transistor c1213