d1117
Abstract: TRANSISTOR 2202 BL 2SA1988 C10535E C10943X MEI-1202 MP-88
Text: DATA SHEET Silicon Power Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. 1.0 4 20.5MAX. 5.0 • High Voltage VCEO = −200 V
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2SA1988
2SA1988
MP-88
d1117
TRANSISTOR 2202 BL
C10535E
C10943X
MEI-1202
MP-88
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d1297
Abstract: d1308 2SK2357 2SK2358 C10535E C11531E
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2357/2SK2358 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor in millimeters designed for high voltage switching applications.
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2SK2357/2SK2358
2SK2357/2SK2358
2SK2357/2358)
2SK2358:
O-220
d1297
d1308
2SK2357
2SK2358
C10535E
C11531E
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PDF
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d1308
Abstract: d1297 D12971E 2SK2411 2SK2411-Z C10535E C11531E MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2411 is N-Channel MOS Field Effect Transistor designed in millimeter 3.0 ±0.3 for high speed switching applications.
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2SK2411,
2SK2411-Z
2SK2411
d1308
d1297
D12971E
2SK2411-Z
C10535E
C11531E
MP-25
MP-25Z
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PDF
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d1308
Abstract: D1297 2SK2355 2SK2356 2SK2356-Z MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel in millimeter MOS Field Effect Transistor designed for high voltage switching
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2SK2355,
2SK2355-Z/2SK2356,
2SK2356-Z
2SK2356-Z
2SK2356:
2SK2355:
d1308
D1297
2SK2355
2SK2356
MP-25
MP-25Z
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PDF
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d1308
Abstract: d1297 2SK2414 2SK2414-Z C10535E C10943X C11531E MEI-1202 2SK2414Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2414, 2SK2414-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor designed PACKAGE DIMENSIONS in millimeter 5.0 ±0.2 FEATURES 1 2 3 RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)
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2SK2414,
2SK2414-Z
2SK2414
d1308
d1297
2SK2414-Z
C10535E
C10943X
C11531E
MEI-1202
2SK2414Z
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PDF
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C10535E
Abstract: C10943X MEI-1202 PA1701 TEA-1035 UPA1701 1037 u
Text: DATA SHEET MOS Field Effect Power Transistors µPA1701 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Transistor in millimeter designed for power management applications of note
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PA1701
C10535E
C10943X
MEI-1202
PA1701
TEA-1035
UPA1701
1037 u
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PDF
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2SK2724
Abstract: C10535E C10943X MEI-1202
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SK2724 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeter This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. 10.0 ±0.3
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2SK2724
O-220
2SK2724
C10535E
C10943X
MEI-1202
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PDF
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C10535E
Abstract: C10943X MEI-1202 PA1710 G1088
Text: DATA SHEET MOS Field Effect Power Transistors µPA1710 SWITCHING P-CHANNEL POWER MOS FFT INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect Transistor in millimeter designed for DC/DC converter and power management 8
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PA1710
980pF
78Max
C10535E
C10943X
MEI-1202
PA1710
G1088
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PDF
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TL113
Abstract: tl201 TL217 w3 smd transistor transistor c111
Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200
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PTFA220081M
PTFA220081M
PG-SON-10
TL113
tl201
TL217
w3 smd transistor
transistor c111
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PDF
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capacitor marking c106
Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200
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PTFA220081M
PTFA220081M
capacitor marking c106
NFM18Ps105
TL217
NFM18PS105R0J3
TL222
Transistor tl217
TRANSISTOR SMD w2
c105 TRANSISTOR
c103 TRANSISTOR DATA
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PDF
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c102 TRANSISTOR
Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200
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PTFA220081M
PTFA220081M
PG-SON-10
c102 TRANSISTOR
c103 TRANSISTOR
c106 TRANSISTOR
TRANSISTOR c105
TRANSISTOR c104
c103 m TRANSISTOR
p 4712
NFM18PS105R0J3
c105 TRANSISTOR
tl113
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PDF
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SWITCHING TRANSISTOR C114
Abstract: C114 E S W transistor C114 transistor for C114 transistor IRGPC30FD2 C-111 C-113 C-114 C-115 ic c113 61
Text: Previous Datasheet Index Next Data Sheet PD - 9.1040 IRGPC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes
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IRGPC30FD2
10kHz)
O-247AC
C-116
SWITCHING TRANSISTOR C114
C114 E S W transistor
C114 transistor
for C114 transistor
IRGPC30FD2
C-111
C-113
C-114
C-115
ic c113 61
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PDF
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uPC79M08HF
Abstract: IC 1904 79m15 79M08 MP-45G PC79M05HF PC79M15HF PC79M18HF PC79M24HF upc79m15hf
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC79M00 Series THREE TERMINAL NEGATIVE VOLTAGE REGULATOR µPC79M00 series are monolithic three terminal negative regulators which employ internally current limiting, thermal shut down, output transistor safe operating area protection make them essentially indestructible.
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PC79M00
uPC79M08HF
IC 1904
79m15
79M08
MP-45G
PC79M05HF
PC79M15HF
PC79M18HF
PC79M24HF
upc79m15hf
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PDF
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PA1572
Abstract: C10535E C10943X MEI-1202 PT2320 PA1572BH
Text: DATA SHEET Compound Field Effect Power Transistor µPA1572B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The µPA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and
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PA1572B
PA1572B
PA1572BH
10Pin
PA1572
C10535E
C10943X
MEI-1202
PT2320
PA1572BH
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PDF
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Untitled
Abstract: No abstract text available
Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz
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PTFB213004F
PTFB213004F
300-watt
H-37275-6/2
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PDF
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IC-3486
Abstract: UPC7915 UPC7905A UPC7905AHF UPC7915AHF UPC7912AHF nec d 882 p datasheet MP-45G PC7912AHF PC7915AHF
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC7900A Series THREE TERMINAL NEGATIVE VOLTAGE REGULATOR DESCRIPTION µPC7900A series are monolithic three terminal negative regulators which employ internally current limiting, thermal shut down, output transistor safe operating area protection make them essentially indestructible.
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PC7900A
PC7905AHF
IC-3486
UPC7915
UPC7905A
UPC7905AHF
UPC7915AHF
UPC7912AHF
nec d 882 p datasheet
MP-45G
PC7912AHF
PC7915AHF
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PDF
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VdS 2093 2009
Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114
Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz
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PTFB213004F
PTFB213004F
300-watt
H-37275-6/2
VdS 2093 2009
TL2014
transistor c114 chip
transistor c114 diagram
TL243
TL145
tl1571
TL1621
transistor c114
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PDF
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TL272
Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
Text: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty
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PTFB201402FC
PTFB201402FC
H-37248-4
17ubstances.
TL272
tl271
TL274
5228 voltage regulator
TL279
TL246
c221 TRANSISTOR
TL-250
tl2741
HD 1077 O
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PDF
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Untitled
Abstract: No abstract text available
Text: 19-4625; Rev 0; 5/09 MAX17102 Evaluation Kit The MAX17102 evaluation kit EV kit is a fully assembled and tested surface-mount circuit board that provides the voltages and features required for activematrix, thin-film transistor (TFT), liquid-crystal displays
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MAX17102
450mA
MAX17102
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿¿PA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect in: millimeter Transistor designed for DC/DC converters and power
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OCR Scan
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uPA1702
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PDF
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a1037
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿¿PA1700A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeter This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power
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OCR Scan
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uPA1700A
a1037
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PDF
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SWITCHING TRANSISTOR C114
Abstract: C114 E S W transistor C114 transistor C114 dt for C114 transistor transistor c114 e
Text: P D - 9.1040 International iorJRectifier IRGPC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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OCR Scan
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10kHz)
IRGPC30FD2
C-115
O-247AC
SWITCHING TRANSISTOR C114
C114 E S W transistor
C114 transistor
C114 dt
for C114 transistor
transistor c114 e
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PDF
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F-254B
Abstract: 0030G
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿IPC79M00 Series THREE TERMINAL NEGATIVE VOLTAGE REGULATOR /¿PC79M00 series are monolithic three terminal negative regulators which employ internally current limiting, ther mal shut down, output transistor safe operating area protection make them essentially indestructible.
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OCR Scan
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uPC79M00
PC79M00
PC79M05HF
PC79M08HF
F-254B
0030G
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PDF
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mPC29M33
Abstract: 29m05 29m33 PC29M00 MP-45G upc29m05hf
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT _//PC29M00 Series THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR The ¿¡PC29M00 series of low dropout voltage three transistor. The ¿¡PC29M00 series feature the ability to term inal positive regulators is constructed with PNP output
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OCR Scan
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uPC29M00
PC29M00
PC24M00A
mPC29M33
29m05
29m33
MP-45G
upc29m05hf
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PDF
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