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    TRANSISTOR C 828 Search Results

    TRANSISTOR C 828 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 828 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23

    nk90

    Abstract: mje321 BF-133 CBVK741B019 F63TNR MMBTH81 MPSH81 PN2222N pnp rf transistor Bf133
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23 nk90 mje321 BF-133 CBVK741B019 F63TNR MMBTH81 PN2222N pnp rf transistor Bf133

    MARKING W3 SOT23 TRANSISTOR

    Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23 MARKING W3 SOT23 TRANSISTOR rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps

    mpsh81 model

    Abstract: MMBTH81 CBVK741B019 F63TNR MPSH81 PN2222N NE-21 BF-133
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23 mpsh81 model MMBTH81 CBVK741B019 F63TNR PN2222N NE-21 BF-133

    mpsh81 model

    Abstract: No abstract text available
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23 mpsh81 model

    CXP82832/82840/82852/82860

    Abstract: CXP82800 CXP82832 CXP82840 CXP82852 CXP82860 Model 52K
    Text: CXP82832/82840/82852/82860 CMOS 8-bit Single Chip Microcomputer Description The CXP82832/82840/82852/82860 is a CMOS 8bit single chip microcomputer integrating on a single chip an A/D converter, serial interface, timer/counter, time base timer, capture timer/counter, fluorescent


    Original     		PDF CXP82832/82840/82852/82860 CXP82832/82840/82852/82860 16-bit 100PIN QFP-100P-L01 QFP100-P-1420 42/COPPER 5-18m CXP82800 CXP82832 CXP82840 CXP82852 CXP82860 Model 52K

    Untitled

    Abstract: No abstract text available
    Text: CXP82832/82840/82852/82860 CMOS 8-bit Single Chip Microcomputer For the availability of this product, please contact the sales office. Description The CXP82832/82840/82852/82860 is a CMOS 8bit single chip microcomputer integrating on a single chip an A/D converter, serial interface, timer/counter,


    Original     		PDF CXP82832/82840/82852/82860 CXP82832/82840/82852/82860 100PIN QFP-100P-L01 QFP100-P-1420 42/COPPER

    CXP82800

    Abstract: CXP82832 CXP82840 CXP82852 CXP82860
    Text: CXP82832/82840/82852/82860 CMOS 8-bit Single Chip Microcomputer Description The CXP82832/82840/82852/82860 is a CMOS 8bit single chip microcomputer integrating on a single chip an A/D converter, serial interface, timer/counter, time base timer, capture timer/counter, fluorescent


    Original     		PDF CXP82832/82840/82852/82860 CXP82832/82840/82852/82860 16-bit 32kHz 100PIN QFP-100P-L01 QFP100-P-1420-A CXP82800 CXP82832 CXP82840 CXP82852 CXP82860

    CXP82800

    Abstract: CXP82832 CXP82840 CXP82852 CXP82860
    Text: CXP82832/82840/82852/82860 CMOS 8-bit Single Chip Microcomputer Description The CXP82832/82840/82852/82860 is a CMOS 8bit single chip microcomputer integrating on a single chip an A/D converter, serial interface, timer/counter, time base timer, capture timer/counter, fluorescent


    Original     		PDF CXP82832/82840/82852/82860 CXP82832/82840/82852/82860 16-bit 100PIN QFP-100P-L01 QFP100-P-1420 42/COPPER CXP82800 CXP82832 CXP82840 CXP82852 CXP82860

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    Untitled

    Abstract: No abstract text available
    Text: . N AMER PHILIPS/DISCRETE 86D 01822 D DbE D bt.53131 DOlHObO □ 7" ~ 5 3 BLX93A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		PDF BLX93A tbS3T31

    BLW84

    Abstract: transistor tt 2222 C 829 transistor TT 2222 npn TT 2222 SOT123 C 828 Transistor transistor L6
    Text: N AMER PHILIPS/DISCRETE bTE D • bbS3S31 002^441 Sfl3 IAPX BLW84 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is guaranteed to w ith­


    OCR Scan     		PDF bbS3S31 BLW84 59-j54 OT-123. 7Z77529 7Z77S30 BLW84 transistor tt 2222 C 829 transistor TT 2222 npn TT 2222 SOT123 C 828 Transistor transistor L6

    1.4464

    Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
    Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S


    OCR Scan     		PDF 2SC5289 2SC5289 SC-61 2SC5289-T1 1.4464 NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473

    Untitled

    Abstract: No abstract text available
    Text: T R A N S IS T O R M O D U L E ^ - > QCA100BA60 UL!E76102 M Q C A 10 0 B A 6 0 is a dual Darlington power transistor module which has series-connected U LTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral­ leled fast recovery diode (trr: 200ns). The mounting base of the


    OCR Scan     		PDF QCA100BA60 E76102 200ns)

    Untitled

    Abstract: No abstract text available
    Text: uim 1. ^ymy^^y'Jxs>-c±mR uTmmm^m0 • Features 1. Developed as a chip thpe SMD phot-transistor for both reverse and top surface mounting. 2. ^ffi\ -^IS3.8(L xl.6(W)xl.l(H) 2. Small and square size, dimensions : 3 .2 (L)x 1.6(W)X1.1 (H)mm. m < D / im - n m v '( X o


    OCR Scan     		PDF T-230

    0025PF

    Abstract: No abstract text available
    Text: TOSHIBA 3SK153 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL D U A L GATE MOS TYPE 3 S K 1 53 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. TV TUNER VHF W ID E B A N D RF AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9 - Û 3 • Superior Cross Modulation Performance.


    OCR Scan     		PDF 3SK153 025pF 0025PF

    A1306A

    Abstract: buz41
    Text: SIEMENS SIPMOS Power MOS Transistor VDS /D ^ D S o n • BUZ 41A = 500 V = 4.5 A = 1-5 Q N channel • E nhancem ent mode • A valanche-proof • Package: TO -220 A B 1) Type Ordering code BUZ 41 A C 6 7078-A 1306-A 3 Maximum Ratings Parameter Symbol


    OCR Scan     		PDF 078-A 306-A SIL00340 SiL00342 A1306A buz41

    BT 816 transistor

    Abstract: transistor bt 808 BT 815 transistor 2SD807 BT 812
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 12//S BT 816 transistor transistor bt 808 BT 815 transistor 2SD807 BT 812

    2SC799

    Abstract: transistor 2sa564 2sa564 transistor 2SA564 25X1 2SA539
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 150Mc) 2SA564 2SC799 transistor 2sa564 2sa564 transistor 25X1 2SA539

    JE 800 transistor

    Abstract: 2SK591 JE 33 TT 46 N 800 TC-6070 sje transistor
    Text: NEC m MOS ^ T iv r x Field E ffe c t P o w e r T r a n s is to r 2SK591 7 -M N ft^ ^ / < i i f f O S FE T l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK591ii, N f t i ' tl'WLB'^7-M O S FETT\ 5 V « « * IC iO ib KWM f - i i : mm


    OCR Scan     		PDF 2SK591 2SK591( JE 800 transistor 2SK591 JE 33 TT 46 N 800 TC-6070 sje transistor

    2SC2121

    Abstract: cannon terminal g25a AC42C
    Text: 2 5 2 / 'J D > N P N = » E « y . - y - J B h > ; ^ SILICON NPN TRIPLE DIFFUSED M ESA TRANSISTOR O » » E E * 4 S’ T o High Voltage Switching Applications •  i Œ T t y?m ; v < S Î n M Œ ^ sÎS^> ; Unit In C! E S = 7 5 0 V v CE sat = 5v (Max.) at Iq= 4A , Ijj=1A


    OCR Scan     		PDF 2sc2121 2SC2121 cannon terminal g25a AC42C

    Transistor NP 3773

    Abstract: TC-6233 jb 5531 F530 T108 L32* MARKING DU 9 marking js 2b K/AK-34
    Text: zr— S • V — H Compound Transistor GAI F4M n m o s < i T X ÎS ÎÆ è lA] / l L T ^ £ ~ t„ R i =22 kû , R 2= 22 ki2 o GN1F4M > 3 > 7" )Ì / > 9 ]) Ti'-Sim X " ë â ~ t, ( T a = 25 "C ) m h «s- al fô -¥ jL a l , 7 9 - -ì-xFh*]' )± ^CBO 60


    OCR Scan     		PDF PWS10 CycleS50 Transistor NP 3773 TC-6233 jb 5531 F530 T108 L32* MARKING DU 9 marking js 2b K/AK-34

    R096

    Abstract: FN1L4Z
    Text: . SEC r i Ï T 7 / \ f -y-57 • 5 / - H A C om pound Transistor FN 1L4Z i&ifc 1*1I t P N p n : 4# > 'J=l> Hwm it o/< 4 - to 2 .8 ± 0 .2 Ri =47 kQ O FA 1 L4 Z t 1.5 ? > 7 ° ') / > ? ') T l f f f l T ' ë 0.65*0 1 ~ t„ ( T a = 25 °C ) m »&


    OCR Scan     		PDF CycleS50 R096 FN1L4Z

    BA1A4M-T

    Abstract: BA1A4M 3773A T108 ptc T108 t0429
    Text: X — ^ • S/— h ÎH 'ê ' V -y > i> Com pound Transistor BAI A 4 M ÍS Íjt F * 3 Ü N P N x t : ^ + ' > T ; u ^ ' > y £|- ff¿l2 ] ¥ 4 5 1 i t o ^ ' i T : m m i X i £ Î Æ £ 1* 1 /1 L t i ' l t c ( R j = 1 0 ki2, R 2= 1 0 kQ) O B N 1A 4M ¿ 3 > f i ]


    OCR Scan     		PDF PWS10 CycleS50 i0992 BA1A4M-T BA1A4M 3773A T108 ptc T108 t0429