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    TRANSISTOR C 557 B W 65 Search Results

    TRANSISTOR C 557 B W 65 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 557 B W 65 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    operation of BC557 TRANSISTOR

    Abstract: TRANSISTOR C 557 B transistor c 557 BC557 SWITCHING TRANSISTOR transistor 557 b of pnp transistor BC557 B 557 PNP TRANSISTOR transistor bc558 features free BC557 TRANSISTOR 557
    Text: UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS „ FEATURES * High Voltage: BC556, VCEO=-65V 1 TO-92 „ ORDERING INFORMATION Normal BC556-x-T92-B BC556-x-T92-K BC557-x-T92-B BC557-x-T92-K BC558-x-T92-B


    Original     		PDF BC556/557/558 BC556, BC556-x-T92-B BC556-x-T92-K BC557-x-T92-B BC557-x-T92-K BC558-x-T92-B BC558-x-T92-K BC556L-x-T92-B BC556L-x-T92-K operation of BC557 TRANSISTOR TRANSISTOR C 557 B transistor c 557 BC557 SWITCHING TRANSISTOR transistor 557 b of pnp transistor BC557 B 557 PNP TRANSISTOR transistor bc558 features free BC557 TRANSISTOR 557

    TRANSISTOR C 557 B

    Abstract: operation of BC557 TRANSISTOR TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR transistor 557 b free BC557 transistor bc558 features of pnp transistor BC557 transistor c 557 transistor c 558
    Text: UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS „ FEATURES * High Voltage: BC556, VCEO=-65V 1 TO-92 Lead-free: BC556L/BC557L/BC558L Halogen-free:BC556G/BC557G/BC558G „ ORDERING INFORMATION Normal BC556-x-T92-B


    Original     		PDF BC556/557/558 BC556, BC556L/BC557L/BC558L BC556G/BC557G/BC558G BC556-x-T92-B BC556-x-T92-K BC557-x-T92-B BC557-x-T92-K BC558-x-T92-B BC558-x-T92-K TRANSISTOR C 557 B operation of BC557 TRANSISTOR TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR transistor 557 b free BC557 transistor bc558 features of pnp transistor BC557 transistor c 557 transistor c 558

    transistor c 557

    Abstract: TRANSISTOR C 557 B B 560 PNP TRANSISTOR transistor B 560 transistor c 558 TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR
    Text: BC556/557/558/559/560 PNP Epitaxial Silicon Transistor Features • Switching and Amplifier • High Voltage: BC556, VCEO = -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings


    Original     		PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor c 557 TRANSISTOR C 557 B B 560 PNP TRANSISTOR transistor B 560 transistor c 558 TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR

    transistor smd marking code c3

    Abstract: smd transistor marking z1 marking code C3 SMD Transistor smd code HF transistor transistor SMD MARKING CODE HF PF 08112 smd transistor marking l6 marking TRANSISTOR SMD nf c4 marking code e2 SMD Transistor smd transistor marking l7
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLF1043 UHF power LDMOS transistor Product specification Supersedes data of 2002 November 11 2003 Mar 13 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1043 PINNING - SOT538A FEATURES • Typical 2-tone performance at a supply voltage of 26 V


    Original     		PDF M3D438 BLF1043 15-Aug-02) transistor smd marking code c3 smd transistor marking z1 marking code C3 SMD Transistor smd code HF transistor transistor SMD MARKING CODE HF PF 08112 smd transistor marking l6 marking TRANSISTOR SMD nf c4 marking code e2 SMD Transistor smd transistor marking l7

    transistor B 560

    Abstract: BC 557 PNP TRANSISTOR transistor bc 558 pnp TRANSISTOR C 557 B transistor c 557 transistor bc 557 c le transistor 557 b B 557 PNP TRANSISTOR TRANSISTOR 557 TRANSISTOR BC 560
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER • HIGH VO LTAG E: BC556, V CEo = -65V • LO W NOISE: BC559, BC560 • C om plem ent to BC546 . BC 550 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase C apacitance


    OCR Scan     		PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor B 560 BC 557 PNP TRANSISTOR transistor bc 558 pnp TRANSISTOR C 557 B transistor c 557 transistor bc 557 c le transistor 557 b B 557 PNP TRANSISTOR TRANSISTOR 557 TRANSISTOR BC 560

    BC557

    Abstract: TRANSISTOR C 557 B transistor BC557 base collector emitter bc558 transistor 557 b transistor BC558 base collector emitter BC558 pnp transistor BC558B transistor c 557 BC557B MCC
    Text: MCC TO-92 P lastic-E n capsu late T ran sisto rs BC556,B/BC557,A,B,C/BC558,B TRANSISTOR PNP FEATU RES dissipation 0.6 2 5 W (T am b=25'C ) Pcm : current IcM : -0.1 A BC 556 : -80 V V cbo; BC 557 : -50V BC 558 : -30 V storage junction temperature range Tj.Tstg: -5 5 ° C to + 150°C


    OCR Scan     		PDF BC556 B/BC557 C/BC558 BC557 BC558 BC556 BC558 TRANSISTOR C 557 B transistor BC557 base collector emitter transistor 557 b transistor BC558 base collector emitter BC558 pnp transistor BC558B transistor c 557 BC557B MCC

    Untitled

    Abstract: No abstract text available
    Text: SYMSEMI SEMICONDUCTOR T O -92 Plastic Encapsulate Transistors BC 556 ,A ,B ,C BC 557 , B BC 558 , B TRANSISTOR PNP TO — 92 f1 — q> ei s j FEATURES Power d is s ip a tio n Pcm : 0.625 W (Tamb=25 °C) C o lle c to r c u rre n t I cm : “0. 1 A C o lle c to r base v o lta g e


    OCR Scan     		PDF BC558 BC556 270TYP 050TYP

    bc556

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER . HIGH VO LTAG E: BC556, VCEo= -65V . LOW NOISE: BC559, BC560 • C om plem ent to BC546 . BC 550 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base C apacitance


    OCR Scan     		PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 bc556

    transistor BC 667

    Abstract: transistor BC 247 transistor BC 245 TRANSISTOR bc 657 BC 667 bc667 transistor bc 658 transistor BC 567 transistor BC 660 BC 247
    Text: - asc î • öE35bG5 o o o m ^ b a « s i e û - D PNPSiliconTransistors B C 5 5 6 -B C 5 6 0 SIEMENS AKTIEN6ESELLSCHAF- f"-2$ - 2./ ' for AF input and driver stages BC 556, BC 557, BC 558, BC 559, and BC 560 are epitaxial PNP silicon Planartransistors in


    OCR Scan     		PDF 235b05 BC556-BC560 BC5561' Q62702-C692 BC556VI Q62702-C692-V3 BC556A Q62702-C692-V1 BC556B Q62702-C692-V2 transistor BC 667 transistor BC 247 transistor BC 245 TRANSISTOR bc 657 BC 667 bc667 transistor bc 658 transistor BC 567 transistor BC 660 BC 247

    BC 247 b transistor

    Abstract: C558B transistor BC 247 transistor BC 245 bc 558 equivalent bc560 bc556b equivalent BC 247 Transistor - BC 547, CL 100 transistor 557 b
    Text: - 25C D • Ô235b05 O O O m ^ b □ H S I E 6 - Q PNPSiliconTransistors B C 5 5 6 -B C 5 6 0 ' SIEMENS AKTIENGESELLSCHAF- 2 % - 2 . 1 for AF input and driver stages BC 556, BC 557, BC 558, BC 559, and BC 560 are epitaxial PNP silicon Planartransistors in


    OCR Scan     		PDF 235b05 BC556' BC556VI BC556A BC556B BC5571 BC557VI BC557A BC557B BC5581 BC 247 b transistor C558B transistor BC 247 transistor BC 245 bc 558 equivalent bc560 bc556b equivalent BC 247 Transistor - BC 547, CL 100 transistor 557 b

    transistor bc 488

    Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
    Text: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 BC317P. transistor bc 488 transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B

    TRANSISTOR C 557 B

    Abstract: MMBT3640 PN3640 PN4258
    Text: S e m i c o n d u c t o r ' “ PN3640 MMBT3640 PN3640 / MMBT3640 & Discrete POW ER & Signal Technologies National SOT-23 Mark: 2J PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. S e e


    OCR Scan     		PDF PN3640 MMBT3640 OT-23 PN4258 VBE10fl, 00M0bS2 TRANSISTOR C 557 B MMBT3640 PN3640

    bc5476

    Abstract: APPLICATION OF BC548 transistor BC547 bc547 pnp BC548 pnp bc547 transistor BC548 pnp transistor BC548 transistor pnp of transistor BC548 transistor bc547 features
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC546/7/8 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES • High Voltage : BC546 V Ceo=65V. • For Complementary With PNP Type BC556/557/558. MAXIMUM RATINGS Ta=25°C


    OCR Scan     		PDF BC546/7/8 BC546 BC556/557/558. BC547 BC548 bc5476 APPLICATION OF BC548 transistor BC547 bc547 pnp BC548 pnp bc547 transistor BC548 pnp transistor BC548 transistor pnp of transistor BC548 transistor bc547 features

    pnp array

    Abstract: smd transistor db2 current mirrors wilson NPN pnp MATCHED PAIRS array 4 npn transistor ic 14pin 2n3906 equivalent transistor smd transistor b44 ELANTEC 510
    Text: 315^557 0GGE5ÛÛ GST M E L A INC ' T - * l 3 - 'Z - 5 1 F eatu res G eneral D escrip tion • • • • • The EP2015 family are quad monolithic vertical P N P transistor arrays which offer excellent parametric m atching and high speed performance. The 350 M H z ft provides A.C. performance


    OCR Scan     		PDF 315TSS7 EP2015/EP2015A 2N3906 TPQ3906 MPQ3906 EP2015CN MDP0031 EP2015ACN EP2015CJ pnp array smd transistor db2 current mirrors wilson NPN pnp MATCHED PAIRS array 4 npn transistor ic 14pin 2n3906 equivalent transistor smd transistor b44 ELANTEC 510

    current mirrors wilson

    Abstract: 8E-15 2N3906 EP2015ACN EP2015C EP2015CM EP2015CN MPQ3906 TPQ3906 PNP Monolithic Transistor Pair
    Text: EP2015C/EP2015AC HIGH PERFORMANCE ANALOG INTEGRATED ClRCunS FastQuad PNP Array F eatu res G eneral D escrip tion • • • • • The EP2015 family are quad monolithic vertical P N P transistor arrays which offer excellent parametric matching and high speed performance. The 350 M Hz ft provides A.C. performance


    OCR Scan     		PDF EP2015C/EP2015AC 2N3906 TPQ3906 MPQ3906 EP2015CN MDP0031 EP2015ACN EP2015CM 20-Lead current mirrors wilson 8E-15 2N3906 EP2015C MPQ3906 PNP Monolithic Transistor Pair

    transistor c655

    Abstract: 9225 npn transistor RF NPN POWER TRANSISTOR 3 GHZ 5w transistor power rating 5w TRANSISTOR A52 C655 13MM ATC100A PH2931-5M TT50
    Text: AÚK.CA', M an A M P company Radar Pulsed Power Transistor, 5W, 100|is Pulse, 10% Duty 2.9-3.1 GHz PH2931-5M V2.00 Features • • • • • • • • ortn NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


    OCR Scan     		PDF 100jis PH2931-5M ATC100A transistor c655 9225 npn transistor RF NPN POWER TRANSISTOR 3 GHZ 5w transistor power rating 5w TRANSISTOR A52 C655 13MM ATC100A PH2931-5M TT50

    marking 557 SOT143

    Abstract: No abstract text available
    Text: • bbSBTBl 0024551 557 « A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64. QUICK REFERENCE DATA transistor


    OCR Scan     		PDF BCV63 BCV63B OT-143 BCV64. bbS3R31 0Q3M553 marking 557 SOT143

    Untitled

    Abstract: No abstract text available
    Text: Philips Components D a ta s h e e t s ta tu s P ro d u ct sp ecification d a te o f is s u e N o v em b e r 1 990 FEATURES • BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA Direct interface to C-M O S, TTL, etc.


    OCR Scan     		PDF BSS100 003bl2b 0Q3bl37 D03fcil2fl

    transistor bf 422 NPN

    Abstract: transistors BC 548 BC 558 transistor BC 338 BC 2222 BC 557 npn transistor bf 422 BC 547 pnp transistor 2N 5551 TRANSISTOR 642 npn 2222 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 transistor bf 422 NPN transistors BC 548 BC 558 transistor BC 338 BC 2222 BC 557 npn transistor bf 422 BC 547 pnp transistor 2N 5551 TRANSISTOR 642 npn 2222 transistor

    NPN transistor 2n2222 beta value

    Abstract: 2N2222 transistor output curve 2N2222 curve beta transistor 2N2222 2n2222 transistor pin b c e MJE210 2n2222 h parameter values
    Text: HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2021C Monolithic Pin Driver F e a tu r e s G en era l D e sc r ip tio n • Wide range of programmable analog output levels • 0.5 Ampere output drive with external transistors • Programmable Slew Rate • Low overshoot with large


    OCR Scan     		PDF EL2021C EL2021C EL2021 EL2021, NPN transistor 2n2222 beta value 2N2222 transistor output curve 2N2222 curve beta transistor 2N2222 2n2222 transistor pin b c e MJE210 2n2222 h parameter values

    transistor

    Abstract: No abstract text available
    Text: r z 7 SCS TH O M S O N BUV66 FAST SWITCHING POWER TRANSISTOR • SUITABLE FOR SWITCHMODE POWER SUP­ PLY, UPS, DC AND AC MOTOR CONTROL DESCRIPTION High voltage, high speed transistor suited for use on the 220 and 380V mains. ABSOLUTE MAXIMUM RATINGS P aram e ter


    OCR Scan     		PDF BUV66 transistor

    Untitled

    Abstract: No abstract text available
    Text: HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS Features • Input buffer • 7.5 V/V nominal gain • + 0 dB to —50 dB gain control • Clamp/DC-restore • 300 M Hz small-signal bandwidth • 300 M Hz large-signal bandwidth • 1.5 ns rise and fall time • 12V supply


    OCR Scan     		PDF EL5003CN 16-Pin MDP0031 EL5003C EL5003C 0D0341A 315T5S7

    bss100 transistor

    Abstract: BSS100 PINNING-TO-92 JZSS773
    Text: Philips C o m po nents Data sheet status P ro d u c t sp e cific a tio n data of issue N ov em b er 1990 FEATURES BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA • Direct interface to C-M O S, TTL, etc. SYM BOL


    OCR Scan     		PDF BSS100 PINNING-TO-92 JZSS773 003bl57 LL53S31 003bl2fi bss100 transistor BSS100

    BF660

    Abstract: transistor 558
    Text: 7110ö2L> 00bflfe,37 024 B P H IN BF660 J V_ SILICON PLANAR TRANSISTOR P-N-P transistor, in a microminiature plastic envelope; intended for use as oscillator in v.h.f. tuners with extended frequency range and/or in conjunction with MOS-FETs in thick and thin-film circuits.


    OCR Scan     		PDF 711002b 00bflti37 BF660 OT-23. BF660 transistor 558