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    TRANSISTOR C 547 Search Results

    TRANSISTOR C 547 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 547 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pin configuration NPN transistor BC548

    Abstract: pin configuration transistor BC547 pin configuration NPN transistor BC547 Amplifier with transistor BC548 BC547 pin configuration NPN transistor BC546 BC547 as amplifiers BC548 BC548C BC546
    Text: BC546,B BC547,A,B,C BC548,A,B,C Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features NPN Silicon l Through Hole Package l 150oC Junction Temperature Amplifier Transistor 625mW Pin Configuration Bottom View C B E


    Original     		PDF BC546 BC547 BC548 150oC 625mW BC546 BC547 BC548 pin configuration NPN transistor BC548 pin configuration transistor BC547 pin configuration NPN transistor BC547 Amplifier with transistor BC548 pin configuration NPN transistor BC546 BC547 as amplifiers BC548C

    Transistor NPN BC556

    Abstract: BC557 BC557 SWITCHING TRANSISTOR npn bc557 of transistor bc558 BC557 SWITCHING APPLICATION TRANSISTOR bc556 BC557 application note BC557 TRANSISTOR application of bc557
    Text: SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES For Complementary With NPN Type BC546/547/548. N E K G J D MAXIMUM RATING Ta=25 CHARACTERISTIC SYMBOL RATING UNIT


    Original     		PDF BC556/7/8 BC546/547/548. BC558 BC556 BC557 Transistor NPN BC556 BC557 BC557 SWITCHING TRANSISTOR npn bc557 of transistor bc558 BC557 SWITCHING APPLICATION TRANSISTOR bc556 BC557 application note BC557 TRANSISTOR application of bc557

    BC557 SWITCHING APPLICATION TRANSISTOR

    Abstract: Bc558
    Text: SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES For Complementary With NPN Type BC546/547/548. N E K G J D MAXIMUM RATING Ta=25 CHARACTERISTIC SYMBOL RATING UNIT


    Original     		PDF BC556/7/8 BC546/547/548. BC558 BC556 BC557 BC557 SWITCHING APPLICATION TRANSISTOR Bc558

    transistor BC557 base collector emitter

    Abstract: BC557 SWITCHING TRANSISTOR BC557 npn bc557 of pnp transistor BC557 transistor bc558 features transistor BC558 base collector emitter BC557 application note BC557 transistor transistor equivalent A BC557
    Text: SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES ᴌFor Complementary With NPN Type BC546/547/548. N E K G J D MAXIMUM RATING Ta=25ᴱ Collector-Base Voltage Collector-Emitter


    Original     		PDF BC556/7/8 BC546/547/548. BC556 BC557 BC558 transistor BC557 base collector emitter BC557 SWITCHING TRANSISTOR BC557 npn bc557 of pnp transistor BC557 transistor bc558 features transistor BC558 base collector emitter BC557 application note BC557 transistor transistor equivalent A BC557

    TRANSISTOR N 1380 600 300 SC

    Abstract: MOSFET 40A 600V IRGPS40B120U mosfet 1200V 40A 1200V, IGBT 500A 1200V
    Text: PD- 94295A IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF 4295A IRGPS40B120U Super-247 Super-247TM 5M-1994. O-274AA TRANSISTOR N 1380 600 300 SC MOSFET 40A 600V IRGPS40B120U mosfet 1200V 40A 1200V, IGBT 500A 1200V

    transistor NEC D 822 P

    Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters


    OCR Scan     		PDF 2SC4226 2SC4226 SC-70 2SC4226-T1 2SC4226-T2 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER . HIGH VO LTAG E: BC546, VCeo= 65V . LOW NOISE: BC549, BC550 • C om plem ent to BC556 . BC560 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage


    OCR Scan     		PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549

    transistor vc 548

    Abstract: Transistor Bc54
    Text: SyrnSEMi SYM5EMI SEMICONDUCTOR BC 546, A, BC 547 A, BC 548, A, T O -92 B, C B, C B, C Plastic Encapsulate Transistors TRANSISTOR NPN TO — 92 FEATURES Power dissipation (Tamb=25 °C ) PCM : 0.625 W Collector current 1cm : 0.1 A Collector base voltage 1. COLLECTOR


    OCR Scan     		PDF BC546 BC547 BC548 270TYP 050TYP transistor vc 548 Transistor Bc54

    transistor C 548 B

    Abstract: transistor c 548 BC547 bc548 transistor 547 TRANSISTOR bc546 fairchild transistor b 548 transistor bc547 transistor 547 b C 548 B
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER • HIGH VO LTAG E: BC546, VCeo=65V • LO W NOISE: BC549, BC550 • C om plem ent to BC556 . BC560 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage


    OCR Scan     		PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 transistor C 548 B transistor c 548 BC547 bc548 transistor 547 TRANSISTOR bc546 fairchild transistor b 548 transistor bc547 transistor 547 b C 548 B

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR IN C _ MMBT5088 — IM E D | T lb M lM S Ü007271. T § NPN EPITAXIAL SILICON TRANSISTOR - LOW NOISE TRANSISTOR T '- ^ . q - i q " SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C


    OCR Scan     		PDF MMBT5088 OT-23

    D 1437 transistor

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the


    OCR Scan     		PDF 2SC5004 D 1437 transistor

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    NEC D 553 C

    Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
    Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.


    OCR Scan     		PDF 2SC4957 2SC4957-T1 2SC4957-T2 Ple-107 NEC D 553 C TRANSISTOR MAC 223 NEC IC D 553 C

    54128

    Abstract: 54175 5413 motorola TTL 7400 motorola 7400 4-input nand gate LA 4301 F 54179
    Text: LA NS D A L E S E M I C O N D U C T O R 3 2 E I> • 5 3 3=1003 00003(3 M (3 B I L T E MAXIMUM RATINGS Supply Voltage - V00 Supply Operating Voltage Range MOTOROLA INTEGRATED CIRCUITS 5400 Series 7400 Series The 5400/7400 series of transistor-transistor logic is a


    OCR Scan     		PDF 14-LEAD 16-LEAD 10-LEAD 24-LEAD 54128 54175 5413 motorola TTL 7400 motorola 7400 4-input nand gate LA 4301 F 54179

    431202036640 choke

    Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit
    Text: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and


    OCR Scan     		PDF BLW85 QQb3357 431202036640 choke CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit

    BC548

    Abstract: bc547 bc546c transistor NPN 548 C 547 c bc546 transistor c 548 c BC547 w 2 d BC548 transistor transistor B 548
    Text: ICC TO-92 Plastic-Encapsulate Transistors BC546,B/BC547fA,BfC/BC548,A,B,C TRANSISTOR NPN FEATURES on P cm ; IcM: 0 .6 2 5 W (T a m b = 2 5 ° C ) 0 .1 A WÊmÊ&m voltage V cbo: B C 546 : 80V B C 547 : 50V B C 548 : 30V S iÊ l^M Ê Ê p^àA d.ataraaa junction tem perature range


    OCR Scan     		PDF BC546 B/BC547fA BfC/BC548 BC547 BC548 BC548 bc546c transistor NPN 548 C 547 c transistor c 548 c BC547 w 2 d BC548 transistor transistor B 548

    CB 548 transistor

    Abstract: transistor C 548 B
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER • HIGH VOLTAGE: BC546, VCeo=65V • LOW NOISE: BC549, BC550 • Complement to BC556 . BC560 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a ra c te ris tic Sym bol Collector Base Voltage


    OCR Scan     		PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 CB 548 transistor transistor C 548 B

    transistor c 548

    Abstract: transistor C 548 B transistor 547 b transistor C 547 c transistor c 548 c C 547 B C 547 transistor transistor b 548 transistor C 547 C 547 C
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER . HIGH VO LT A G E : BC546, V CEo=65V • L O W NOISE: BC549, B C5S0 • Complement to BC556 . B C 560 ABSOLUTE MAXIMUM RATINGS <TA=25t C h aracte ristic Sym b o l Collector Base Voltage


    OCR Scan     		PDF BC546/547/548/549/550 BC546, BC549, BC556 BC546 BC547/550 BC548/549 BC546 BC547/550 BC548/549/550 transistor c 548 transistor C 548 B transistor 547 b transistor C 547 c transistor c 548 c C 547 B C 547 transistor transistor b 548 transistor C 547 C 547 C

    TRANSISTOR J 5804 NPN

    Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
    Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.


    OCR Scan     		PDF 2SC4885 SC-70 TRANSISTOR J 5804 NPN nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF

    MRF517

    Abstract: 2761 l transistor 336 motorola OB2200
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF517 The R F Line HIG H FREQUENCY NPN SILICON HIGH FREQ UENCY TRANSISTOR TRANSISTOR NPN SILICON . . . designed s p e c ific a lly fo r b roadb and a p p lic a tio n s re q u irin g lo w d is to r tio n characteristics. S p e cifie d fo r use in C A T V d is tr ib u tio n


    OCR Scan     		PDF MRF517 MRF517 2761 l transistor 336 motorola OB2200

    CT 1975 sam

    Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
    Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the


    OCR Scan     		PDF 2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking

    BST70A

    Abstract: y548
    Text: b7E D • bLjS3ci31 DÜE3R3S D4D I APX BST70A N AUER P H I L I P S / D I S C R E T E N-CHANNEL VERTICAL D-M OS TRANSISTOR IM-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.


    OCR Scan     		PDF BST70A 7Z91031 BST70A y548

    Untitled

    Abstract: No abstract text available
    Text: • b b S a ' O l QQ24b5cl 72T « A P X N APIER P H I L I P S / D I S C R E T E BF570 b7E P 7 V SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic SOT-23 variant envelope, intended for use in large-signal handling i.f. pre­ amplifiers of TV receivers in combination with surface acoustic wave filters.


    OCR Scan     		PDF QQ24b5cl BF570 OT-23

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from


    OCR Scan     		PDF 2SC5010