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    TRANSISTOR C 460 Search Results

    TRANSISTOR C 460 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 460 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4420 Transistor

    Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
    Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


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    ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748 PDF

    4420 Transistor

    Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
    Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


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    ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23 PDF

    BCW60A

    Abstract: BCW60B BCW60C BCW60D
    Text: BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage


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    BCW60A/B/C/D OT-23 BCW60A BCW60B BCW60C BCW60D PDF

    sot 23 mark AD

    Abstract: BCW60A BCW60B BCW60C BCW60D
    Text: BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage


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    BCW60A/B/C/D OT-23 sot 23 mark AD BCW60A BCW60B BCW60C BCW60D PDF

    BCW60D

    Abstract: fairchild SOT-23 Mark PC BCW60A BCW60B BCW60C sot 23 mark AD MARKING AB FAIRCHILD
    Text: BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage


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    BCW60A/B/C/D OT-23 BCW60D fairchild SOT-23 Mark PC BCW60A BCW60B BCW60C sot 23 mark AD MARKING AB FAIRCHILD PDF

    Analog devices TOP marking Information

    Abstract: marking B22 sot-23 BCW61A transistor cross ref fairchild sot-23 Device Marking pc Cross Reference sot23 BC TRANSISTOR SOT-23
    Text: BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -32 Units V VCEO


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    BCW61A/B/C/D OT-23 KST5086 OT-23 BCW61AMTF Analog devices TOP marking Information marking B22 sot-23 BCW61A transistor cross ref fairchild sot-23 Device Marking pc Cross Reference sot23 BC TRANSISTOR SOT-23 PDF

    marking B22 sot-23

    Abstract: bc 2001 transistor BCW61A BCW61B BCW61C BCW61D KST5086
    Text: BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -32 Units V VCEO


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    BCW61A/B/C/D OT-23 KST5086 marking B22 sot-23 bc 2001 transistor BCW61A BCW61B BCW61C BCW61D PDF

    6R160C6

    Abstract: IPW60R160C6 TRANSISTOR SMD MARKING CODE infineon cool MOSFET dynamic characteristic test infineon MOSFET parameter test IPA60R160C6 IPB60R160C6 IPP60R160C6 SMD mosfet MARKING code TC JESD22
    Text: M OS F E T Metal Oxide Semiconductor Field Effect Transistor Coo l MOS C 6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.0, 2009-09-25 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6


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    IPx60R160C6 IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 6R160C6 IPW60R160C6 TRANSISTOR SMD MARKING CODE infineon cool MOSFET dynamic characteristic test infineon MOSFET parameter test IPA60R160C6 IPB60R160C6 SMD mosfet MARKING code TC JESD22 PDF

    BCW61A

    Abstract: transistor mark BA transistor BC 310 BCW61C transistor BC 55 BCW61D ks5086
    Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Cllector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


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    BCW61A/B/C/D OT-23 KS5086 BCW61B BCW61C BCW61D BCW61A BCW61A transistor mark BA transistor BC 310 BCW61C transistor BC 55 BCW61D PDF

    BCW61A

    Abstract: marking BA RT TRANSISTOR PNP BA RT SOT 89 BCW61B BCW61C BCW61D
    Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


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    BCW61A/B/C/D OT-23 KS5086 BCW61A marking BA RT TRANSISTOR PNP BA RT SOT 89 BCW61B BCW61C BCW61D PDF

    F1K marking

    Abstract: No abstract text available
    Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature


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    BCW61A/B/C/D KS5086 BCW61 F1K marking PDF

    BCX70J

    Abstract: 07 le 90
    Text: NPN EPITAXIAL SILICON TRANSISTOR BCX70J GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation Storage Tem perature


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    BCX70J KS3904 OT-23 BCX70J 07 le 90 PDF

    BCW General Purpose Transistor

    Abstract: l9902
    Text: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector Dissipation


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    BCW60A/B/C/D BCW General Purpose Transistor l9902 PDF

    L9902

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR BCX70J GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature


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    BCX70J KS3904 L9902 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a r a c t e r is t i c Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


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    BCW61A/B/C/D OT-23 KS5086 BCW61B BCW61C BCW61 BCW61A BCW61B -10mA, -50mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


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    BCW60A/B/C/D OT-23 BCW60B BCW60C BCW60D BCW60A PDF

    BCW60A

    Abstract: BCW60D BCW60B BCW60C transistor mark code AD transistor ad 1v sot 23 mark AD LC marking code transistor
    Text: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C o lle c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t


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    BCW60A/B/C/D OT-23 BCW60B BCW60A BCW60B BCW60C BCW60D BCW60D transistor mark code AD transistor ad 1v sot 23 mark AD LC marking code transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: BCX71J PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ol le c to r-B a s e V o lta g e C o lle c to r-E m ltte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t


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    BCX71J PDF

    BCX71J

    Abstract: No abstract text available
    Text: BCX71J PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C o lle c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t


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    BCX71J KS5086 OT-23 -10nA -50mA -10mA, -50mA, BCX71J PDF

    BC446

    Abstract: TRANSISTOR C 460 BC445 WT transistor
    Text: DESCRIPTION BC445 BC446 C .*' o SILICON EPITAXIAL TRANSISTOR T O W :n BC445 NPN and BC446 (PNP) are silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. ABSOLUTE MAXIMUM RATINGS


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    BC445 BC446 BC445 300mA 625mW 12mW/Â 100mA 100MHz BC446 TRANSISTOR C 460 WT transistor PDF

    BC449

    Abstract: Bc449 transistor
    Text: BC449 NPN SILICON TRANSISTOR DESCRIPTION 04.68 0.18 BC449 is NPN silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. 4*6 (0.18) TO-92F -I— I- - 0.4 E B c \_ [(0 .0 1 6 )


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    BC449 O-92F 300mA 625mW 100mA 100MHz Bc449 transistor PDF

    transistor mark BA

    Abstract: No abstract text available
    Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol


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    BCW61A/B/C/D MMBT5086 BCW61 BCW61C BCW61D BCW61B transistor mark BA PDF

    Untitled

    Abstract: No abstract text available
    Text: BCX71J PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS TA=25t: C haracteristic Collector-Base Voltage Collector-Em itlef Voltage Emitter-Base Voltage Collector Currant Collector Dissipation Storage T emperature


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    BCX71J KST5086 -50mA -10mA, -50mA, 990Si PDF

    Untitled

    Abstract: No abstract text available
    Text: BCX70J NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t: C h a ra cte ristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


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    BCX70J OT-23 KST3904 PDF