TRANSISTOR C 3904 Search Results

TRANSISTOR C 3904 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR C 3904 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
VPS05604 Abstract: No abstract text available Text: SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data 4 • High current gain 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated NPN/PNP Transistors in one package 2 1 3 VPS05604 PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C	Original	3904PN VPS05604 3904PN Q62702-C OT-363 EHP00757 EHP00760 VPS05604	PDF
1N916 Abstract: PZT3904 PZT3906 VPS05163 Text: PZT3904 NPN Silicon Switching Transistor High DC current gain: 0.1mA to 100mA 4 Low collector-emitter saturation voltage Complementary type: PZT3906 PNP 3 2 1 Type Marking PZT3904 ZT 3904 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings	Original	PZT3904 100mA PZT3906 VPS05163 OT223 EHP00293 EHP00712 Nov-30-2001 1N916 PZT3904 PZT3906 VPS05163	PDF
transistor c 3906 Abstract: 3906 TRANSISTOR npn transistor 3906 3906 pnp 3906 1N916 VPS05163 transistor pnp 3906 Text: PZT 3906 PNP Silicon Switching Transistor • High DC current gain: 0.1mA to 100mA 4 • Low collector-emitter saturation voltage • Complementary type: PZT 3904 NPN 3 2 1 Type Marking PZT 3906 ZT 3906 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C	Original	100mA VPS05163 OT-223 EHP00714 EHP00302 EHP00715 Oct-13-1999 transistor c 3906 3906 TRANSISTOR npn transistor 3906 3906 pnp 3906 1N916 VPS05163 transistor pnp 3906	PDF
3904 Abstract: transistor 3904 npn 3904 TRANSISTOR PNP 3904 Transistor B 3904 transistor 3904 npn datasheet 1N916 VPS05163 3906 PNP Text: PZT 3904 NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 100mA 4 • Low collector-emitter saturation voltage • Complementary type: PZT 3906 PNP 3 2 1 Type Marking PZT 3904 ZT 3904 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C	Original	100mA VPS05163 OT-223 soEHP00710 EHP00711 EHP00293 EHP00712 Oct-13-1999 3904 transistor 3904 npn 3904 TRANSISTOR PNP 3904 Transistor B 3904 transistor 3904 npn datasheet 1N916 VPS05163 3906 PNP	PDF
Untitled Abstract: No abstract text available Text: PZT3904 NPN Silicon Switching Transistor High DC current gain: 0.1mA to 100mA 4 Low collector-emitter saturation voltage Complementary type: PZT3906 PNP 3 2 1 Type Marking PZT3904 ZT 3904 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings	Original	PZT3904 100mA PZT3906 VPS05163 OT223 Aug-20-2001 EHP00711 EHP00293 EHP00712	PDF
npn3904 Abstract: NPN-3904 pnp3906 3906 PNP MMDT3946 3904 TRANSISTOR npn sot transistor 3906 Text: MMDT3946 NPN / PNP Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” indicates halogen-free. FEATURE SOT-363 Complementary Pair One 3904-Type NPN One 3906-Type PNP Epitaxial Planer Die Construction Ideal for Low Power Amplification and Switching	Original	MMDT3946 OT-363 3904-Type 3906-Type PNP3906 NPN3904 -10mA, 14-Apr-2010 npn3904 NPN-3904 pnp3906 3906 PNP MMDT3946 3904 TRANSISTOR npn sot transistor 3906	PDF
3904 Abstract: "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23 Text: SMBT 3904 NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3906 PNP 2 1 Type Marking SMBT 3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23	Original	100mA VPS05161 OT-23 Oct-14-1999 EHP00763 EHP00764 EHP00757 EHP00758 3904 "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23	PDF
MMDT3946 Abstract: No abstract text available Text: MMDT3946 NPN / PNP Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” indicates halogen-free. SOT-363 FEATURE A E Complementary Pair One 3904-Type NPN One 3906-Type PNP Epitaxial Planer Die Construction Ideal for Low Power Amplification and Switching	Original	MMDT3946 OT-363 3904-Type 3906-Type 15-Jun-2012 MMDT3946	PDF
3904 Abstract: Transistor 3904 tr 3904 3904 NPN 3904 Transistor transistor 3904 npn datasheet 3904 TRANSISTOR npn Text: NPN Silicon Switching Transistor SXT 3904 High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings	Original	Q68000-A8396 OT-89 3904 Transistor 3904 tr 3904 3904 NPN 3904 Transistor transistor 3904 npn datasheet 3904 TRANSISTOR npn	PDF
spice 3906 Abstract: No abstract text available Text: SPICE MODELS: MMDT3946 MMDT3946 Lead-free COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · · Complementary Pair A One 3904-Type NPN, One 3906-Type PNP C2 SOT-363 E1 Epitaxial Planar Die Construction B C Ideal for Low Power Amplification and Switching	Original	MMDT3946 3904-Type 3906-Type OT-363 J-STD-020C MIL-STD-202, DS30123 spice 3906	PDF
3906 Abstract: transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E Text: SMBT 3906 PNP Silicon Switching Transistor 3 High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Complementary type: SMBT 3904 NPN 2 1 Type Marking SMBT 3906 s2A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings	Original	100mA VPS05161 OT-23 EHP00772 EHP00773 Oct-14-1999 EHP00768 EHP00769 3906 transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E	PDF
Untitled Abstract: No abstract text available Text: SPICE MODELS: MMDT3946 MMDT3946 Lead-free COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · · Complementary Pair A One 3904-Type NPN, One 3906-Type PNP C2 B1 SOT-363 E1 Epitaxial Planar Die Construction B C Ideal for Low Power Amplification and Switching	Original	MMDT3946 3904-Type 3906-Type OT-363 J-STD-020C MIL-STD-202, DS30123	PDF
3904 npn Abstract: KST3903 KST3904 FAIRCHILD SOT-23 MARK 1a Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation	OCR Scan	KST3903/3904 OT-23 KST390 300ns, KST3903 KST3904 3904 npn KST3904 FAIRCHILD SOT-23 MARK 1a	PDF
2N3904 Abstract: 2N3804 transistor ST 2N3904 transistor ST 2N3804 transistor 2n3903 2N3903 2n3904 225 ST 2n3904 transistor 2N 3904 N3903 Text: 2 N3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR CoN edor-Em itter Voltage: V c e o * 4 0 V C o lle cto r D issipation: P c m ax -62Sm W ABSOLUTE MAXIMUM RATINGS {TA=25t) C h a ra c te ristic C o lle cto r-B ase Voltage Collector-E m itter Voltage	OCR Scan	N3903/3904 -62Sm 100mA 100MHz 2N3903/3904 2N3904 2N3804 transistor ST 2N3904 transistor ST 2N3804 transistor 2n3903 2N3903 2n3904 225 ST 2n3904 transistor 2N 3904 N3903	PDF

Untitled Abstract: No abstract text available Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature	OCR Scan	KST3903/3904 KST3903 KST3904	PDF
Untitled Abstract: No abstract text available Text: KSP6520/6521 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR T O -92 • C ollector-E m itter Voltage: V C e o = 2 5 V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Rating Unit Col lector-Base Voltage	OCR Scan	KSP6520/6521	PDF
3904 NPN Abstract: KST3904 Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic C ollecto r-B a se Voltage C o llecto r-E m itte r V oltage Em itter-Base V oltage Symbol Rating VcBO VcEO -6 0 -4 0 -6 -2 0 0	OCR Scan	KST3903/3904 OT-23 KST3903 KST3904 3904 NPN	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
Untitled Abstract: No abstract text available Text: I S AM S U N G S E M I C O N D U C T O R . INC MMBT4124 14E D \| 7*^4142 0 0 0 7 a tt» 7 \| NPN EPITAXIAL SILICON TRANSISTOR .T j-a R -fl GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	MMBT4124 OT-23	PDF
3906 Abstract: sot transistor 3906 transistor 3906 BT3904 transistor pnp 3906 3904 SOT SAW MARKING CODE SOT-23 transistor 3906 SOT23 Text: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High D C current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SM B T 3904 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)	OCR Scan	Q68000-A4417 OT-23 EHP0Q77Q 3906 sot transistor 3906 transistor 3906 BT3904 transistor pnp 3906 3904 SOT SAW MARKING CODE SOT-23 transistor 3906 SOT23	PDF
Untitled Abstract: No abstract text available Text: SIEMENS NPN Silicon Switching Transistor SXT 3904 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings	OCR Scan	Q68000-A8396 OT-89 5235bQ5 G122b23 fl53Sb05 E35Li05	PDF
Untitled Abstract: No abstract text available Text: SIEMENS NPN Silicon Switching Transistor SXT 3904 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel PinC^onfigu ration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings	OCR Scan	Q68000-A8396 OT-89 SXT3904	PDF
BT 815 transistor Abstract: BT 816 transistor Text: 3EE D • ÔSBbBHQ 0017S3? 4 SMBT3906 PNP Silicon Switching Transistor SIEMENS/ SPCL-. SEMICONDS • • • ISIP r-3'7- i r High D C current gain: 0.1 to 100 mA Low collector-emitter saturation voltage Complementary type: S M B T 3904 NPN Type Marking Ordering code	OCR Scan	0017S3? SMBT3906 Q68000-A4341 Q68000-A4417 23b320 BT 815 transistor BT 816 transistor	PDF
Untitled Abstract: No abstract text available Text: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1 mA to 100m A • Low collector-em itter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package • C om plem entary type: SM BT 3906S (PNP)	OCR Scan	3904S 3906S VPS05604 EHA07178 Q62702-A1201 OT-363 EHP00756	PDF

TRANSISTOR C 3904 Search Results

TRANSISTOR C 3904 Result Highlights (5)

TRANSISTOR C 3904 Datasheets Context Search

VPS05604

1N916

transistor c 3906

3904

Untitled

npn3904

3904

MMDT3946

3904

spice 3906

3906

Untitled

3904 npn

2N3904

Untitled

Untitled

3904 NPN

2N2222A 338

Untitled

3906

Untitled

Untitled

BT 815 transistor

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