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    TRANSISTOR C 2705 Search Results

    TRANSISTOR C 2705 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 2705 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistor marking BQ

    Abstract: marking BQ BQ MARKING transistor BQ
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC5658NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPA2029NND03


    Original     		PDF WBFBP-03B WBFBP-03B TPC5658NND03 TPA2029NND03 100MHz TPC5658NND03 Transistor marking BQ marking BQ BQ MARKING transistor BQ

    TRANSISTOR FQ

    Abstract: transistor marking fq FS transistor marking marking FQ fq transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPA2029NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION PNP Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPC5658NND03


    Original     		PDF WBFBP-03B WBFBP-03B TPA2029NND03 TPC5658NND03 --50A -50mA 30MHz TPA2029NND03 TRANSISTOR FQ transistor marking fq FS transistor marking marking FQ fq transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPA2029NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION PNP Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPC5658NND03


    Original     		PDF WBFBP-03B WBFBP-03B TPA2029NND03 TPC5658NND03 -50mA 30MHz

    Transistor marking BQ

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC5658NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPA2029NND03


    Original     		PDF WBFBP-03B WBFBP-03B TPC5658NND03 TPA2029NND03 100MHz Transistor marking BQ

    2SA1585E

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors C 2SA1585E WBFBP-03A TRANSISTOR 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B E C 1. BASE FEATURES Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A)


    Original     		PDF WBFBP-03A 2SA1585E WBFBP-03A 2SA1585E

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors C 2SA1585E WBFBP-03A TRANSISTOR 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B E C 1. BASE FEATURES Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A)


    Original     		PDF WBFBP-03A 2SA1585E WBFBP-03A 100MHz

    2SC4115E

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors 2SC4115E C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A)


    Original     		PDF WBFBP-03A 2SC4115E WBFBP-03A 2SC4115E

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors 2SC4115E C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A)


    Original     		PDF WBFBP-03A 2SC4115E WBFBP-03A 100MHz

    Untitled

    Abstract: No abstract text available
    Text: 2SC4617 NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES Low Cob: Cob=2.0pF Typ A L Complement to 2SA1774 3 3 C B Top View Collector 1 3 C 3 1 K 2 E 2 1 D Base


    Original     		PDF 2SC4617 OT-523 2SA1774 24-Nov-2009

    csc4115bc

    Abstract: CSC4115
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC4115 9AW TO-92 BCE MARKING : CSC 4115 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL


    Original     		PDF CSC4115 25deg C-120 csc4115bc CSC4115

    2SC4115S

    Abstract: No abstract text available
    Text: 2SC4115S NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92S FEATURES 1.5 ±0.2 3.1±0.2 4.0±0.2 Power dissipation PD: 0.3 W Tamb=25 I CM: 15.3 ±0.2 Collector current


    Original     		PDF 2SC4115S O-92S 2SC4115S

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC4115 9AW TO-92 BCE MARKING : CSC 4115 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL


    Original     		PDF CSC4115 25deg C-120

    2SD2150

    Abstract: transistor marking 2a marking CFR
    Text: 2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES 4 Excellent Current-to-Gain Characteristics Low Collector Saturation Voltage, VCE SAT =0.5V(Max.) for IC / IB=2A/0.1A


    Original     		PDF 2SD2150 OT-89 100mA -500mA, 100MHz 6-Nov-2009 2SD2150 transistor marking 2a marking CFR

    MARKING W1 AD

    Abstract: transistor BC 153
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC4115 9AW TO-92 BCE MARKING : CSC 4115 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)


    Original     		PDF CSC4115 25deg C-120 MARKING W1 AD transistor BC 153

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    T272i

    Abstract: 2SC 5802 2SD1961 R2713 c 5802 transistor L2000 mrrr 2SD1962M 2SD2097 2SD2098
    Text: ROHM CO L T » h7 40E /Transistors » Bi 7 Û S Ô ci ci cî OOObDST ö «RHM 2SD1961/2SD1962M/2SD2097/2SD2098 2 S D 1 S 6 1 /2 S D 1 962M S S 2 S D 2 C 9 7 /2 S ÎD 2 C 9 3 Vt>4V:'A'vJ|*J' NPN y y a > Epitaxial Planar NPN Silicon Transistor 1W f i xt'iiEl/'Dlm ensions Unît; mm


    OCR Scan     		PDF 2SD1S81 2SD2C97/2SD2093 2SD1961 /2SD1962M/2SD2097/2SD2098 r-27-13 O-92L/ty/r-i-- T-27-13 O-92L T272i 2SC 5802 R2713 c 5802 transistor L2000 mrrr 2SD1962M 2SD2097 2SD2098

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low-frequency Transistor 20V, 3A 2SD2150/2SC4115S/2SD2264 •Features 1) •External dimensions (Units: mm) LOW VcE(sat). VcE(sai) = 0 . 2 V ( T y p .) ( I c / I b = 2A/Û.1A) 2) Excellent current gain characteris­ tics. 3) Complements the 2SB1424/2SA1585S.


    OCR Scan     		PDF 2SD2150/2SC4115S/2SD2264 2SB1424/2SA1585S. 96-237-C74) 2SD2150 2SC4115S 2SD2264 5mQ010

    2SB1460

    Abstract: No abstract text available
    Text: 2SB1460 h 7 > y ^ ^ //Transistors I e £ * V 7 j u7‘ I' - P NP y 'J I] > h -7 > y Epitaxial Planar PN P Silicon Transistor f é U iM ll ^ J ílí lf f l/ L o w Freq. Power Amp. • • « ft Dimensions Unit : mm 1) V c e (sat) V c e (sat)=— 0.2V(Typ.)


    OCR Scan     		PDF 2SB1460 100MHz 2SB1460

    CP666

    Abstract: CP640 Crystalonics FERROXCUBE 1041t060 Crystalonics Cp666 trifilar transistor fet N-Channel RF Amplifier CP664 CP665 CRY664UA
    Text: Web site: WWW.Crystalonics.com Phone: 781 270-5522 R R O A n R A M n RF FF T 1 X \ y / \ l—S k • / / \ 1 1 l_ S 1 X 1 1 L . 1 N-CHANNEL FIELD EFFECT TRANSISTOR niun u t inmivu ^ n Mi N u c n r minu v n r /-uviruiricr» GEOMETRY 424 FOR USE IN COMMON GATE CONFIGURATION


    OCR Scan     		PDF CP640 CRY640UA CP664 CRY664UA CP665 CRY665UA CP666 CRY666UA Crystalonics FERROXCUBE 1041t060 Crystalonics Cp666 trifilar transistor fet N-Channel RF Amplifier CRY664UA

    TRANSISTOR 2688

    Abstract: CE 2711 2SA1150 2SC2682
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF TV25TÃ 2SA1150 TRANSISTOR 2688 CE 2711 2SC2682

    2SC4326LK

    Abstract: J100 T146 T147
    Text: 2SC4326LK h "7 > v J* £ /Transistors 2 S C 4 3 2 6 L K Epitaxial Planar NPN Silicon Transistor RF 7. -f y Switch Usage • W ërJ’JÎBI/Dim ensions Unit : mm 2) 3) R F i V 2 P - i > ¥ « R F ^ - f y ^ f f l t 0.B±0.1 L T £ S „ a T«m • Features


    OCR Scan     		PDF 2SC4326LK 0-15-fr SC-59 0D11Q31 2SC4326LK J100 T146 T147

    2SA1455K

    Abstract: 2SC3722K T146 T147 OA95
    Text: 2SA1455K K ~7 > y 7s £ /'Transistors P N P '> U n > 2 S A 1 4 5 5 K Epitaxial Planar PNP Silicon Transistor £ i*E ftJ l& & g i£ ^ ig itiffl/H ig h Voltage Low Freq. Low Noise Amp. • ftft 1 » W E T * S o Vceo = -1 2 0 V 2) N F=0.2dB Typ.) (at V c e = —6V, lc = - 1 0 0


    OCR Scan     		PDF 2SA1455K -I20V -120V -100mA, 2SC3722K. SC-59 2SA1455K 2SC3722K T146 T147 OA95

    PS2705-4

    Abstract: No abstract text available
    Text: HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP MULTI PHOTOCOUPLER PS2705-1 P S 2705-2 PS2705-4 FEATURES_ DESCRIPTION_ • HIGH ISOLATION VOLTAGE BV:3.75 k Vr.m.s. MIN • SOP SMALL OUT-LINE PACKAGE • ISOLATED CHANNELS PER EACH PACKAGE


    OCR Scan     		PDF PS2705-1 PS2705-4 PS2705-1, PS2705-2 PS2705-4

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC PHOTOCOUPLER PS2705-1 ,PS2705-2,PS2705-4 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP MULTI PHOTOCOUPLER -N E P O C S e rie s - DESCRIPTION T he P S 2705-1, P S 2705-2, P S 2 7 0 5 -4 are o p tica lly c o u p le d iso lato rs con ta in in g tw o G aA s light em ittin g d iod es and


    OCR Scan     		PDF PS2705-1 PS2705-2 PS2705-4 P11309EJ5V0DS00 PS2705-1-E4 PS2705-1-F4 PS2705-1-E3