2225-4L
Abstract: No abstract text available
Text: 2225-4L 3.5 Watts, 24 Volts, Class C Microwave 2200-2500 MHz GENERAL DESCRIPTION The 2225-4L is a COMMON BASE transistor capable of providing 3.5 Watts, Class C output power over the band 2200-2500 MHz. The transistor includes input prematching for full broadband capability. Gold metalization and
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2225-4L
2225-4L
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Untitled
Abstract: No abstract text available
Text: MMPQ3725 MMPQ3725 E B E B E B E C SOIC-16 B C C C C C C C NPN Quad Transistor This device is designed for high current low impedance line driver applications. Sourced from Process 26. Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter
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MMPQ3725
SOIC-16
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mcl610
Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601
Text: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR
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MCT210
MCT26
MCT66
MCL600
MCL610
MCT81
MCA81
MCL611
Transistor Data chart
mcl600
mcs6200
transistor 6 B
transistor c 2500
MCT4R
MCL601
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MCT8 opto
Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR
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MCT210
MCT26
MCT66
C1255
10TT1.
MCT8 opto
c1252
MCL601
MCT8 opto switch
C1246
4N25
4N26
4N27
4N28
4N35
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6002 transistor
Abstract: QCA50B QCA50B40 QCA50B60 QCB50A40 QCB50A60 UUE76102
Text: 0002171 IDT TRANSISTOR M ODULE QCA50B/QCB50A40/60 UUE76102 M Q C A 5 0 B and Q C B 5 0 A are dual Darlin gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.
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QCA50B/QCB50A40/60
QCA50B
QCB50A
400/600V
UUE76102
0CA50B
QCA50B40
0D02172
50A40
b0B60
6002 transistor
QCA50B60
QCB50A40
QCB50A60
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10E-D3
Abstract: TLP532 E67349 TLP531
Text: TOSHIBA TLP531JLP532 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP531, TLP532 PROGRAMMABLE CONTROLLERS A C /D C -IN PU T MODULE SOLID STATE RELAY The TOSHIBA TLP531 and TLP532 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a
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TLP531
TLP532
TLP531,
TLP532
2500Vrms
UL1577,
E67349
10E-D3
E67349
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Untitled
Abstract: No abstract text available
Text: • TRANSISTOR MODULE 7«maM3 0005177 357 QCA75A/QCB75A40/60 UL;E76102 M and Q C B 7 5 A are dual Darlin gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.
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QCA75A/QCB75A40/60
E76102
A75A60
B75A40
B75A60
QCA75A/QCB75A
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE QCA200AA120 Q C A 200 A A 12 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated
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QCA200AA120
7T11243
0QD2D13
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE QCA75AA100 UL;E76102 M Q C A 75A A 100 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated
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QCA75AA100
E76102
100msec
00V-----IB,
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE QCA200A40/60 Q C A 2 00 A is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semicon
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QCA200A40/60
400/600V
QCA200A
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603AL
Abstract: marking 603AL transistor
Text: EMI C O N D U C T O R tm FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, D M O S technology. This
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FDD603AL
603AL,
603AL
marking 603AL transistor
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE QCA100AA100 UL;E76102 M Q C A 1O O A A 10 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated
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QCA100AA100
E76102
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BUK427-600B
Abstract: No abstract text available
Text: 7 ^ 3 9 - / / Philips Com ponents Data sheet status P r o d u c t s p e c ific a tio n date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic füll pack envelope.
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BUK427-600B
7110fl5fc.
-SOT199
T-39-11
711Qfl2b
BUK427-600B
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLP570,TLP571 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TI PR7Í1 T I PR71 PRO GRAM M ABLE CONTROLLERS A C /D C - IN P U T MODULE SOLID STATE RELAY The TO SH IBA TLP570 and TLP571 consist of a darlington connected photo-transistor optically coupled to a gallium arsenide infrared
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TLP570
TLP571
TLP571
2500Vrms
UL1577,
E67349
TLP570
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE QCA200AA100 UL;E76102 M Q C A 2 0 0 A A 1 0 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated
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QCA200AA100
E76102
QDQ2Q12
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QCA30B40
Abstract: QCA30B60 QCB30A40 QCB30A60 UUE76102 711-1543
Text: 7 ^ 1 5 4 3 GO051b? TRANSISTOR MODULE 4flfl QCA30B/QCB30A40/60 U U E 7 6 1 0 2 M and Q C B 30A are dual Darlin gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.
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QCA30B/QCB3QA40/60
QCA30B
QCB30A
400/600V
QCA30B
UUE76102
QCB30A
QCA30B40
QCB30A40
500/i
QCA30B60
QCB30A60
711-1543
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TLP521
Abstract: TLP521-4 TLP521-1 TLP521-2 Toshiba tlP521 Photocoupler tlp521 Photocoupler TLP521-2GB TLP521 gr TLP521-1GB TLP521-2 gr
Text: TOSHIBA TLP521-1,TLP521-2,TLP521-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP521-1, TLP521-2, TLP521-4 PROGRAMMABLE CONTROLLERS A C /D C -IN P U T MODULE SOLID STATE RELAY The TOSHIBA TLP521-1, -2 and -4 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode.
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TLP521
TLP521-2JLP521
TLP521-1,
TLP521-2,
TLP521-4
TLP521-2
TLP521-4
2500Vrms
UL1577,
TLP521-1
Toshiba tlP521 Photocoupler
tlp521 Photocoupler
TLP521-2GB
TLP521 gr
TLP521-1GB
TLP521-2 gr
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D 1437 transistor
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the
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2SC5004
D 1437 transistor
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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BUK427-600B
Abstract: 18-SO BUK427-600 d0411
Text: 7 ^ 3 9 - / / Philips C om ponents Data sheet status Product specification date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATION GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.
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BUK427-600
711Dfl2t.
D0411S0
-SOT199
BUK427-600B
18-SO
d0411
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TLP531,TLP532 TO SHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP531, TLP532 P RO G R AM M ABLE CONTROLLERS A C /D C -IN P U T M O DU LE SOLID STATE RELAY The TOSHIBA TLP531 and TLP532 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a
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OCR Scan
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TLP531
TLP532
TLP531,
TLP532
2500Vrms
UL1577,
E67349
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PDF
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Untitled
Abstract: No abstract text available
Text: TLP572 GaAs IRED S PHOTO-TRANSISTOR TLP572 P R O G R A M M A B L E C ONTRO LLERS A C /DC - IN P U T M O D U L E SO LID STATE RELAY The TOSHIBA TLP572 consists of a darlington connected photo transistor optically coupled to a gallium arsenide infrared em itting
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TLP572
TLP572)
TLP572
2500Vrms
UL1577,
E67349
RATI72
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lt 715 1111
Abstract: st zo 607
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEA TU R E • P A C K A G E DIMENSIONS in mm High gain, low noise • Small reverse transfer capacitance • C an operate at low voltage ¥ A B S O LU TE MAXIMUM RATINGS (Ta = 25 °C)
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