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    TRANSISTOR C 2432 Search Results

    TRANSISTOR C 2432 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 2432 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ultra low noise RF Transistor

    Abstract: BFR740F BFP740F sdars application note no. 122 sdars lna amplifier TRANSISTOR 12 GHZ Low Noise R.F 11 A 122 transistor infineon b 58 468
    Text: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 2 2 I n f i n e on ’ s B F P 7 4 0 F U l tr a L ow N o i s e R F T r a n s i s t o r i n 2 . 33 G H z S D A R S L o w N o i s e Amplifier Application R F & P r o t e c ti o n D e v i c e s


    Original     		PDF BFP740F ultra low noise RF Transistor BFR740F sdars application note no. 122 sdars lna amplifier TRANSISTOR 12 GHZ Low Noise R.F 11 A 122 transistor infineon b 58 468

    Zener Diode 3v 400mW

    Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
    Text: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –


    Original     		PDF DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF BU2520AF 16kHz BY328 Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998

    nmos transistor 0.35 um

    Abstract: P854 "vlsi technology" abstract for intel gelato FEM95 20VOLTS his 06 P856
    Text: Intel’s 0.25 Micron, 2.0Volts Logic Process Technology A. Brand, A. Haranahalli, N. Hsieh, Y.C. Lin, G. Sery, N. Stenton, B.J. Woo California Technology and Manufacturing Group, Intel Corp. S Ahmed, M. Bohr, S. Thompson, S. Yang Portland Technology Development Group, Intel Corp.


    Original     		PDF

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


    Original     		PDF DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    pulse generator MC14001

    Abstract: MOV surge protection circuit diagram ic mc14001 mc14001 SCR 2N3906 applications zener diode mv 13 GE mov GE Transient Voltage Suppression Manual GE MOV varistor motorola 1w zener diodes AR450
    Text: AR450 — CHARACTERIZING OVERVOLTAGE TRANSIENT SUPPRESSORS Prepared by Al Pshaenich Motorola Power Products Division The use of overvoltage transient suppressors for protecting electronic equipment is prudent and economically justified. For relatively low cost, expensive circuits can be


    Original     		PDF AR450 AN843. AN784. AN879. EB-106. pulse generator MC14001 MOV surge protection circuit diagram ic mc14001 mc14001 SCR 2N3906 applications zener diode mv 13 GE mov GE Transient Voltage Suppression Manual GE MOV varistor motorola 1w zener diodes

    dinverter 768r

    Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF HEF4527BT HEF4531BT HEF4534BP HEF4534BT MSP-STK430X320 AD9054/PCB AD9054BST-135 IPS521G IPS521S IRL2203S dinverter 768r G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601

    Ericsson Installation guide for RBS 6000

    Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 304X264X130 CL200 TC554001FI-85L TC554001FTL-70 BMSKTOPAS900 BMSKTOPAS870 10/100TX 13X76 35X100 19X89 Ericsson Installation guide for RBS 6000 ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC

    UJT 2N2646 specification

    Abstract: GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS UJT 2N2646 DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram
    Text: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have


    Original     		PDF 1N6373 1N6381 ICTE-36, MPTE-45) UJT 2N2646 specification GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS UJT 2N2646 DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram

    UJT 2N2646

    Abstract: UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 UJT 2N2646 specification diode zener BZX 61 C 10 UJT 2N2646 PIN VIEW pin diagram of UJT-2N2646 varistor pdz 320 BZX 460 zener diode 1N4742A 12 volt zener diode
    Text: BZX85C3V3RL Series 1 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulators This is a complete series of 1 Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon–oxide passivated junctions. All this in an axial–lead


    Original     		PDF BZX85C3V3RL DO-41 204AL) UJT 2N2646 UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 UJT 2N2646 specification diode zener BZX 61 C 10 UJT 2N2646 PIN VIEW pin diagram of UJT-2N2646 varistor pdz 320 BZX 460 zener diode 1N4742A 12 volt zener diode

    UJT 2N2646 specification

    Abstract: UJT 2N2646 5000 watts PURE SINE WAVE inverter schematic diagram UJT-2N2646 PIN DIAGRAM DETAILS Diode SOT-23 marking 15d UJT 2N2646 ratings 10kw inverter PURE SINE WAVE schematic diagram MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR ge digital energy match ups 2-GND MARKING QV sot23
    Text: 1SMA5.0AT3 Series 400 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener


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    NE24300

    Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
    Text: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator


    OCR Scan     		PDF b4E7414 00D2371 NE243 NE24300 NE243187 NE243188 NE243287 NE243288 transistor 81 110 w 63 transistor 81 110 w 85 NE243499 NE24318

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    IR2E27A

    Abstract: Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28
    Text: Product Lineup Product Lineup • Transistor Arrays 'S H A R P 4 Product Lineup SHARP 5 Product Lineup ■ Special Function Transistor Arrayys F u nc ti o n Mo del No. O utput v o lt a g e 1mA V) 400 12 -c irc u it P rinte r D river and IR 2402 1 - c i r c u i t R ib b o n Shif t D r i v e r


    OCR Scan     		PDF 24DIP/24SOP IR2C10 IR2E34 IR2E27A Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28

    FT3812

    Abstract: 2SC2431 2SC2432 FT3862 2SA1042 2sc2132 c 2432 FUJITSU 2SC2431
    Text: FUJITSU 2SC 2431 2SC 2/132 SILICON HIGH SPEED POWER TRANSISTORS F T 3 8 1 2 (F T 3 8 6 2 ) Septem ber 1979 SILICON NPN RING EMITTER TRANSISTOR (RET) T h e 2 S C 2 4 3 1 /2 S C 2 4 3 2 are silicon N P N general purpose, high p o w e r sw itching transistors fa b ric a te d w ith Fujitsu 's u n iq u e Ring E m itte r T ran sis to r (R E T ) te c h ­


    OCR Scan     		PDF 2SC2431 2SC2432 FT3812 FT3862 FT3862 2SA1042 2sc2132 c 2432 FUJITSU 2SC2431

    2SA1047

    Abstract: 2SA1037 2SA1040 2SA1041 2SA1042 2SC2412
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF Tc-25 2SA1047 2SA1037 2SA1040 2SA1041 2SA1042 2SC2412

    IR2431

    Abstract: IR2432 IR2433 IR2431 Sharp Led Driver VU METER 32 led GL112R9 vu meter
    Text: SHARP ELEK/ MELEC D IV y~- 7 3 -<¡3 1S E 0 | fllö 0 7 T fl 12 -Dot LED Display Driver 0002S03 |R2431 /IR 2432/IR2433 12-Dot LED Display Driver • Description ■ The IR2431/IR2432/IR2433 is suitable for driving 12 LED level meters. The IR2433 is cascadable for 144 dots of bar


    OCR Scan     		PDF 0002S03 12-Dot R2431 /IR2432/IR2433 IR2431/IR2432/IR2433 IR2431/IR2432/IR2433 IR2433 IR2431 IR2432 IR2431 Sharp Led Driver VU METER 32 led GL112R9 vu meter

    73412

    Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7


    OCR Scan     		PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318

    transistor 6d

    Abstract: MUN2111T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network M otorola P referred D ev ic w This new series of digital transistors is designed to replace a single device


    OCR Scan     		PDF SC-59 MUN2111T1 MUN2114T1 transistor 6d

    50n03

    Abstract: 6030L 70N03 P transistor Comparison Tables 70N03
    Text: Optim ization of the Performance of Power Supply Circuits That Use Low Voltage, Low On-Resistance M O SFETs By F. luan Hshieh, Sydney So, Jeff Chuc Low Voltage, Low On-Resistance Trench MOSFET Design Abstract A typical discrete double-diffused MOSFET or DMOS tran­


    OCR Scan     		PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    TRANSISTOR sd 346

    Abstract: Lautsprecher RFT L 2911 Lautsprecher LP C 4804 transistor TRANSISTOR b 882 p rft lautsprecher transistor GC 228 Transistor B 886 service-mitteilungen RFT KR 650
    Text: SERVICE-MITTEILUNGEN VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN radio - television I Ausgabe 1988 Seite 8 1-4 Mitteilung aus dem VEB Fernsehgerätewerk Staßfurt Sicherheitskontrollen für 4oooer Parbfernsengeräte Nachfolgend geben wir Hinweise, welche speziellen Kontrollen


    OCR Scan     		PDF untersc0037 TRANSISTOR sd 346 Lautsprecher RFT L 2911 Lautsprecher LP C 4804 transistor TRANSISTOR b 882 p rft lautsprecher transistor GC 228 Transistor B 886 service-mitteilungen RFT KR 650

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    transistor 0190

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF338 Designed primarily for wideband large-signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics


    OCR Scan     		PDF MRF338 Device40 MRF338 transistor 0190