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    TRANSISTOR C 2330A Search Results

    TRANSISTOR C 2330A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 2330A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5252 F 1009 "integrated circuit"

    Abstract: LMX1601 LMX2336 892063 6301k lmx2315 qpsk modulation experiment discussion PHILIPS RF databook 1980 AN1001 AN-1052
    Text: PLL Performance, Simulation, and Design Frequency Dividers 1/N Output Frequency Fout 1/R Kφ Loop Filter Voltage Controlled Oscillator ( VCO ) Crystal Reference Charge Pump/Phase-Frequency Detector ( PFD ) Low Pass Filter Z(s) By Dean Banerjee Copyright 1998 National Semiconductor


    Original     		PDF

    2SJ208

    Abstract: MEI-1202 transistor C 2330A
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ208 P-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit: mm The 2SJ208, P-channel vertical type MOS F E T, is a switching device which can be driven by 2.5 V power supply. As the MO S F E T is driven by low voltage and does n ot require con­


    OCR Scan     		PDF 2SJ208 2SJ208, 2SJ208 MEI-1202 transistor C 2330A

    MF-1134

    Abstract: 2SJ208 MEI-1202
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ208 P-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit: mm


    OCR Scan     		PDF 2SJ208 2SJ208, MF-1134 2SJ208 MEI-1202

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


    OCR Scan     		PDF thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p