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    TRANSISTOR C 2 SUB Search Results

    TRANSISTOR C 2 SUB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 2 SUB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC4867

    Abstract: 16T MARKING 2SC4871 FH201 ZS21 TA-1315 1hz OUTPUT 7CJE
    Text: Ordering number:ENN6117 NPN Epitaxial Planar Silicon Composite Transistor FH201 SAÈÈYOI VCO OSC Circuit Applications Features Package Dimensions • C om p osite type w ith a buffer transistor 2 S C 4 8 7 1 and a oscillator transistor (2 S C 4 8 6 7 ) contained in


    OCR Scan     		ENN6117 FH201 2SC4871) 2SC4867) FH20I 2SC4871 2SC4867, FH201] 7117D7L 0D544b7 2SC4867 16T MARKING FH201 ZS21 TA-1315 1hz OUTPUT 7CJE PDF

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2


    Original     		BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C 1000hrs 1000hrs 15min 20sec 1000cycle 96hrs PDF

    SOT-23

    Abstract: TRANSISTOR SMD fr 21 smd transistor ds 65
    Text: Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2


    Original     		BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C 1000hrs 15min) 15min 20sec 1000cycle 96hrs SOT-23 TRANSISTOR SMD fr 21 smd transistor ds 65 PDF

    TLP621

    Abstract: MARKING toshiba TLP621-4 e152349 TLP621-4 11-5B2 E67349 TLP621-2
    Text: TOSHIBA TLP621,TLP621-2#TLP621-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR T L P 6 2 1 . T L P 6 2 1 -2 . T L P 6 2 1 -4 PROGRAMMABLE CONTROLLER A C /D C -IN P U T MODULE SOLID STATE RELAY The TOSHIBA TLP621, -2, and -4 consists of a photo-transistor


    OCR Scan     		TLP621 TLP621 TLP621, TLP621-2, TLP621-4 TLP621-2 TLP621-4 MARKING toshiba TLP621-4 e152349 11-5B2 E67349 PDF

    TLP620

    Abstract: TLP620-2 TLP620-4
    Text: TOSHIBA TLP620,TLP620-2,TLP620-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP620, TLP620-2, TLP620-4 PROGRAMMABLE CONTROLLERS A C /D C-IN PU T MODULE TELECOMMUNICATION The TOSHIBA TLP620, -2 and -4 consists of a photo-transistor optically coupled to two gallium arsenide infrared em itting diode


    OCR Scan     		TLP620 TLP620-2 TLP620-4 TLP620, TLP620-2, TLP620-4 TLP620 PDF

    BC250

    Abstract: transistor bc250 transistor bc 102 BC 250 transistor bc 100
    Text: BC250 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups A, B and C according to its D C current gain. Plastic package = J E D E C T O -9 2 T O -1 8 com patible The ca se is im pervious to light


    OCR Scan     		BC250 BC250 transistor bc250 transistor bc 102 BC 250 transistor bc 100 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TLP621,TLP621-2JLP621-4 TOSHIBA PHOTOCOUPLER T L P 621, T L P GaAs IRED & PHOTO-TRANSISTOR 6 2 1 -2 , T L P 6 2 1 -4 PRO G RAM M ABLE CONTROLLER A C /D C -IN PU T MODULE SOLID STATE RELAY The TOSHIBA TLP621, -2, and -4 consists of a photo-transistor


    OCR Scan     		TLP621 TLP621-2JLP621-4 TLP621, TLP621-2 TLP621-4 TLP621 TLP621-2 TLP621-4 PDF

    BR 9014

    Abstract: BR 9015 BR 9014 C transistor 9015 c 9015 transistor data sheet transistor 9014 transistor 9015 9015 pnp pnp transistor 9015 9015 TO-92
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. 1. Emitter 2. Base 3. Collector


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2629 NPN EPITAXIAL PLANAR TYPE DESCRIPTION O UTLINE DRAWING 2 S C 2 6 2 9 is a silicon N P N epitaxial planar type transistor designed for R F power amplifiers in V H F band m obile radio applications. Dimensions in mm C 1 .5 M A X


    OCR Scan     		2SC2629 PDF

    TLP521

    Abstract: TLP521-4 TLP521-1 TLP521-2 Toshiba tlP521 Photocoupler tlp521 Photocoupler TLP521-2GB TLP521 gr TLP521-1GB TLP521-2 gr
    Text: TOSHIBA TLP521-1,TLP521-2,TLP521-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP521-1, TLP521-2, TLP521-4 PROGRAMMABLE CONTROLLERS A C /D C -IN P U T MODULE SOLID STATE RELAY The TOSHIBA TLP521-1, -2 and -4 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode.


    OCR Scan     		TLP521 TLP521-2JLP521 TLP521-1, TLP521-2, TLP521-4 TLP521-2 TLP521-4 2500Vrms UL1577, TLP521-1 Toshiba tlP521 Photocoupler tlp521 Photocoupler TLP521-2GB TLP521 gr TLP521-1GB TLP521-2 gr PDF

    2T marking

    Abstract: No abstract text available
    Text: MMBT4403 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features C 3 2 • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT4401 is recommended. • This transistor is also available in the TO-92 case


    Original     		MMBT4403 MMBT4401 2N4403. OT-23 MMBT4403 MMBT4403-GS18 MMBT4403-GS08 D-74025 24-May-04 2T marking PDF

    2gm marking

    Abstract: TRANSISTOR marking code vishay
    Text: MMBTA56 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features C 3 2 • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBTA06 is recommended. • This transistor is also available in the TO-92 case


    Original     		MMBTA56 MMBTA06 MPSA56. OT-23 MMBTA56 MMBTA56-GS18 MMBTA56-GS08 D-74025 01-Sep-04 2gm marking TRANSISTOR marking code vishay PDF

    MMBT3906 vishay

    Abstract: No abstract text available
    Text: MMBT3906 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features C 3 2 • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT3904 is recommended. • This transistor is also available in the TO-92 case


    Original     		MMBT3906 MMBT3904 2N3906. OT-23 MMBT3906 MMBT3906-GS18 MMBT3906-GS08 D-74025 19-May-04 MMBT3906 vishay PDF

    2sc4525

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4525 NPN EPITAXIAL PLANAR TYPE D IS C R E T IO N 2 S C 4 5 2 5 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifiers applications in 1.65G H z. FEATURES • • High power gain: G p b ^ 6.0dB, P0 = 2 0W


    OCR Scan     		2SC4525 2SC4525 PDF

    BC550

    Abstract: transistor bc550 pin configuration NPN transistor BC550 bc550 noise figure
    Text: BC550 NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups A, B and C according to its current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Collector 2. Base 3. Emitter


    Original     		BC550 BC550 transistor bc550 pin configuration NPN transistor BC550 bc550 noise figure PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3020 NPN EPITAXIAL P LA N A R T Y P E DESCRIPTION 2 S C 3 0 2 0 is a silicon NPN epitaxial planar type transistor design­ OUTLINE DRAWING Dimensions in mm ed for UHF power amplifier applications. FEATURES • High gain: G p e S lO d B , @f = 52 0M H z, V c c - 1 2 .5 V ,


    OCR Scan     		2SC3020 PDF

    PH2729-65M

    Abstract: No abstract text available
    Text: z-z -,-= 2 .-= -= -= =c r s an AMP company * Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz I v2.00 .300 22.86 Features -:i~~~)-j ( NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation


    Original     		PH2729-65M Curren44) 2052-56X-02 PH2729-65M PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4989AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4989AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C C R1 R1 fS6 2 5 3 4 0.1±0.05


    Original     		RN4989AFS PDF

    RN4983AFS

    Abstract: No abstract text available
    Text: RN4983AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4983AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 C fS6 R1 R2 B R2 B E 2 5


    Original     		RN4983AFS RN4983AFS PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4983AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4983AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C C R1 R1 B fS6 R2 R2 B 2 5 3


    Original     		RN4983AFS PDF

    RN4985AFS

    Abstract: No abstract text available
    Text: RN4985AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4985AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C C R1 2 5 3 4 R1 fS6 1. EMITTER1


    Original     		RN4985AFS RN4985AFS PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4987AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4987AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C C R1 R1 fS6 2 5 3 4 0.1±0.05


    Original     		RN4987AFS PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4985AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4985AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C C R1 2 5 3 4 R1 fS6 1. EMITTER1


    Original     		RN4985AFS PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4985AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4985AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C C R1 R1 fS6 2 5 3 4 1. EMITTER1


    Original     		RN4985AFS PDF