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    TRANSISTOR C 1344 Search Results

    TRANSISTOR C 1344 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 1344 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PH2729-65M

    Abstract: No abstract text available
    Text: z-z -,-= 2 .-= -= -= =c r s an AMP company * Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz I v2.00 .300 22.86 Features -:i~~~)-j ( NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation


    Original     		PDF PH2729-65M Curren44) 2052-56X-02 PH2729-65M

    Rogers 6010.5

    Abstract: PH1214-20EL PH1214-25M 6010.5 transistor j39
    Text: -F-z = -=-=c =z z .-= = E an AMP company * Radar Pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz PHI 214-20EL Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


    Original     		PDF 214-20EL PH1214-20EL PH1214-25M Rogers 6010.5 PH1214-20EL PH1214-25M 6010.5 transistor j39

    PH2729430M

    Abstract: No abstract text available
    Text: = .- =_ ‘E an AMP company Radar Pulsed Power Transistor, 13OW, IOOps Pulse, 10% Duty 2.7 - 2.9 GHz PH2729430M Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation New Power Dense Interdigitated Geometry


    Original     		PDF PH2729430M Vccs36 PH2729430M

    13MM

    Abstract: PH3134-2OL transistor f20 PH3134
    Text: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors


    Original     		PDF PH3134-2OL 13MM PH3134-2OL transistor f20 PH3134

    PH2323-3

    Abstract: NPN TRANSISTOR Z4 RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR Z4 transistor c s z 44 v 4 ghz transistor
    Text: an AMP cormany CW Power Transistor, 2.3 GHz 3.5W PH2323-3 v2.00 Features NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic MetalCeramic Package


    Original     		PDF PH2323-3 PH2323-3 NPN TRANSISTOR Z4 RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR Z4 transistor c s z 44 v 4 ghz transistor

    12C TRANSISTOR

    Abstract: transistor j39 transistor J45
    Text: an AMP comnanv Radar Pulsed Power Transistor, 25W, lps Pulse, 10% Duty PHI21 4-25s 1.2 - 1.4 GHz v2.00 Features - - - ,320 NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


    Original     		PDF PHI21 4-25s l214-25M 12C TRANSISTOR transistor j39 transistor J45

    PH2731-20M

    Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz
    Text: an AMP company Radar Pulsed Power Transistor, 2OW, loops Pulse, 10% Duty PH2731-20M 2.7 - 3.1 GHz v2.00 9co Features ,-^ :22.85> NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigicated Geometry


    Original     		PDF PH2731-20M PI42731 PH2731-20M 3 w RF POWER TRANSISTOR 2.7 ghz

    b 595 transistor

    Abstract: Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE
    Text: =s = =-= ‘, = * an AMP .- -=r= FF company Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


    Original     		PDF PH31355M 15-j3 b 595 transistor Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE

    TRANSISTOR Z4

    Abstract: No abstract text available
    Text: an AMP company Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors


    Original     		PDF 214-6M TRANSISTOR Z4

    PH1214-2M

    Abstract: .15 j63 1.5 j63 1035 transistor
    Text: an AMP company Radar Pulsed Power Transistor, 2W, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-2M v2.00 Features c_I- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors


    Original     		PDF PH1214-2M 214-2M PH1214-2M .15 j63 1.5 j63 1035 transistor

    J37 transistor

    Abstract: transistor j8 transistor j37 J370 capacitor J37 PH3134-9L transistor j145
    Text: = - an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty Pti3134-9L 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors


    Original     		PDF Pti3134-9L t23MM, J37 transistor transistor j8 transistor j37 J370 capacitor J37 PH3134-9L transistor j145

    13MM

    Abstract: PH1214-4M
    Text: =7 an AMP comDanv = E Radar Pulsed Power Transistor, 4W, loops Pulse, 10% Duty PH1214-4M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors


    Original     		PDF PH1214-4M TT50M5OA 2052-56X-02 13MM PH1214-4M

    PH1012

    Abstract: No abstract text available
    Text: y H fe C O H Coming Attractions M a r t A M P com pany Avionics Pulsed Power Transistor, 70W, TACAN Format 1025-1150 MHz PH1012-70 V1.00 Features • • • • • • • • NPN Silicon Microwave Power Transistor C om m on Base C onfiguration Broadband Class C O peration


    OCR Scan     		PDF PH1012-70 PH1012

    Untitled

    Abstract: No abstract text available
    Text: Mkcm m an A M P com pany Radar Pulsed Power Transistor, 40W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-40M V2.00 Features • • • • • • • • NPN S ilicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d C lass C O p era tio n


    OCR Scan     		PDF 150ns PH1214-40M PH1214-40M

    transistor c s z 44 v

    Abstract: No abstract text available
    Text: 4JÄ C O M w an A M P com pany CW Power Transistor, 1W 2.3 GHz PH2323-1 V2.00 Features • • • • • • • NPN S ilicon M icrow ave P o w er Transistor C o m m o n Base C on figuration C lass C O p eratio n Interdigitated G eo m etry D iffused Em itter B allasting Resistors


    OCR Scan     		PDF PH2323-1 50M50A 114P5' transistor c s z 44 v

    Untitled

    Abstract: No abstract text available
    Text: Radar Pulsed Power Transistor, 75W, 300ns Pulse, 10% Duty 2.7 - 3.1 GHz PH2731-75L V 2 .0 0 Features COÜ N I’ N Silicon Microwave Power Transistor C om m on Hase Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors


    OCR Scan     		PDF 300ns PH2731-75L PH2731-75L

    Untitled

    Abstract: No abstract text available
    Text: w an A M P com pany Radar Pulsed Power Transistor, 100W, 2ms Pulse, 20% Duty 1.2 -1.4 GHz PH1214-100EL V2.01 Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d Class C O p eratio n


    OCR Scan     		PDF PH1214-100EL

    6010.5

    Abstract: No abstract text available
    Text: an A M P com pany Radar Pulsed Power Transistor, 80W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-80M Features • • • • • • • • NPN S ilicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d C lass C O p eratio n H igh Efficiency Interdigitated G eo m etry


    OCR Scan     		PDF 150ns PH1214-80M PH1214-80M 6010.5

    Untitled

    Abstract: No abstract text available
    Text: jt f K m W an A M P com pany Radar Pulsed Power Transistor, 25W, 100|is Pulse, 10% Duty 2.7 - 2.9 GHz PH2729-25M V2.00 Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d C lass C O p era tio n


    OCR Scan     		PDF PH2729-25M TT90M50AGROUND ATC100A

    PW400

    Abstract: transistor b 595
    Text: m M a n A M P com pany Radar Pulsed Power Transistor, 2W, lOO^s Pulse, 10% Duty 1.2-1.4 GHz PH1214-2M Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d C lass C O p eration Interdigitated G eo m etry


    OCR Scan     		PDF PH1214-2M PH1214-PM PW400 transistor b 595

    LA 4288

    Abstract: No abstract text available
    Text: m an A M P com pany Radar Pulsed Power Transistor, 90W, 2 is Pulse, 10% Duty 3.1-3.5 GHz PH3135-90S Features • • • • • • • • NPN S ilicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d C lass C O p eratio n High Efficiency Interdigitated G eo m etry


    OCR Scan     		PDF PH3135-90S ATC100A LA 4288

    Untitled

    Abstract: No abstract text available
    Text: M a n A M P com pany Radar Pulsed Power Transistor, 4W, 100p.s Pulse, 10% Duty 1.2-1.4 GHz PH1214-4M Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d Class C O p eratio n Interdigitated G eo m etry


    OCR Scan     		PDF PH1214-4M TT50M50A

    Untitled

    Abstract: No abstract text available
    Text: an A M P company Avionics Pulsed Power Transistor, 350W, 250ns Pulse, 10% Duty 1030 -1090 MHz PH1090-350L V2.00 Features • • • • • • • • NPN Silicon Microwave Pow er Transistor C om m on Base Configuration Broadband Class C O peration High Efficiency Interdigitated G eom etry


    OCR Scan     		PDF 250ns PH1090-350L

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931