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    TRANSISTOR C 1177 Search Results

    TRANSISTOR C 1177 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 1177 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    transistor bfw16a

    Abstract: transistors BFW16A vk200 philips BFW16A bfw16a philips bfw16a philips semiconductor ic 1014b vk200
    Text: Philips Sem iconductors bbsa'm Product specification 003212'ì STO • APX NPN 1 GHz wideband transistor BFW16A N AMER P H ILIP S /D IS C R E T E DESCRIPTION t^ E PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.


    OCR Scan     		PDF bbS3T31 BFW16A bb53T31 D03B131 BFW16A transistor bfw16a transistors BFW16A vk200 philips bfw16a philips bfw16a philips semiconductor ic 1014b vk200

    PH11 SOT23

    Abstract: BFS17 TRANSISTOR C 1177
    Text: • ^53^31 00252Sb 2 83 H A P X Philips Sem iconductors Product specification N AMER PHILIPS/DISCRETE b?E NPN 1 GHz wideband transistor DESCRIPTION c BFS17 PINNING NPN transistor In a plastic SOT23 envelope. It is intended for a wide range of RF applications, such as mixers and


    OCR Scan     		PDF 00252Sb BFS17 MEA393 MEA397 PH11 SOT23 BFS17 TRANSISTOR C 1177

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N930. NPN Silicon Small-Signal Transistor CR Y S TA IO N C S 2805 veterww Highway Veterans Hij Suite 14 designad for low power amplifier applications. Ronkonkoma, N.Y. 11778 MAXIMUM RATINGS Symbol Valu« Collector-Emitter Voltage


    OCR Scan     		PDF 2N930.

    Untitled

    Abstract: No abstract text available
    Text: 2N918JAN, JTX, JTXV, JA N S processed per M IL-S-19500/301 NPN Silicon Small-Signal Transistor C R YSTA IO N C S 2805 Veterans Highway Suite 14 Ronkonkoma. N Y . 11779 de^Ç'ieO lor uRta hiof fr«qu*ncy ampi.fier dKxcationE M AXIM UM R A T IN G S AatkftQ Coi«cl X E m * * V04UQ«


    OCR Scan     		PDF 2N918JAN, IL-S-19500/301 V04UQ«

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N4405* PNP Silicon Small-Signal Transistor c k y s t a io n c s 2805 Veterans Hiahwav d e s i g n e d fo r g e n e r a l- p u r p o s e s w it c h in g a n d a m p lif ie r a p p lic a t io n s . S u / f 74 Ronkorkoma, N.Y. 1177u


    OCR Scan     		PDF 2N4405* 1177u

    2N2605

    Abstract: transistor t1W
    Text: SEMICONDUCTOR TECHNICAL DATA s 2N2605JAN, JTX, JTXV, JANS Processed per MlL-S-19500/354 PNP Silicon Small-Signal Transistor < M g n « lor f l M . v - p u w . c h y s t a io n c s <* a p p .^ t . o n , 2805 Veteran* Highway Suite u Ronkorkena NY 11778 [ m a x im u m r a t in g s


    OCR Scan     		PDF 2N2605JAN, MlL-S-19500/354 fetir111 2N2605 transistor t1W

    2N4854

    Abstract: No abstract text available
    Text: 2N4854 CRYSTALONCS Complementary Dual Sm all-Signal Transistor " * * * Rnnkonkoma n .y . 11779 M A X IM U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage V C EO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Collector 1 to Collector 2 Voltage VC1C2 ±120


    OCR Scan     		PDF 2N4854 2N4854

    2N6987

    Abstract: 2N6887
    Text: 2N6987 2N6988 ? CRYSTALO NCS 2805 Veterans Highway suite 14 Ronkonkoma. N.Y. 11779 Multiple Quad PNP Silicon Small-Signal Transistors . designed for general-purpose switching circuits and D C to V H F amplifier applications Similar to 2 N 2 90 7 A individual transistor specifications. Complementary devices available


    OCR Scan     		PDF 2N6987 2N6988 2N6989/90) 2N6988 O-116) 2N6887 2N6987, 2N6887

    2SK462

    Abstract: 53-AS M71E
    Text: NEC j N ^ 1 -^ ^ ' ^ ' 7 y — M O S ? - > F E T ? m oLm m N-Channel MOS Field Effect Power Transistor Switching Industrial Use Afflili]/PA C K A G E DIMENSIONS 2S K462Ü , Unit : mm FETT-, * 7 f > D C - D C 3 V '* — ? , w m v m t i r n à * ¿6 , ¡ÎJS ÎÆ


    OCR Scan     		PDF 2SK462 2SK462Ã CycleSi50 2SK462 53-AS M71E

    2SK659

    Abstract: TC-6071
    Text: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #


    OCR Scan     		PDF 2SK659 2SK659Ã 2SK659 TC-6071

    JIDC

    Abstract: No abstract text available
    Text: SE M IC O N D U C T O R TECHNICAL DATA 2N930JAN, JTX Processed per MIL-S-19500/253 NPN Silicon Sm all-Signal Transistor CRYSTALOWCS 2805 Veterans Highway Suite 14 designed fot i o * powuf am putar applicano* RonkOTkOfTì*. N.Y. 11779 MAXIMUM R A T IN G S


    OCR Scan     		PDF 2N930JAN, MIL-S-19500/253 -65IO200 JIDC

    2SA1462

    Abstract: JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor
    Text: NEC i m=ïTivfx A Silicon Transistor 2SA1462 P N P i b " ^ + '> 7 J U M '> ' n > b ^ > ' > * 9 PN P Silicon Epitaxial Transistor High Speed Switching ^ S / P A C K A G E D IM EN SIO N S #ë/FEA TU RES O X - í v f > / 'iÈ ÎÉ Â 'j iË ^ o Unit : mm) ton : 9.0 ns T Y P . , t stg : 16 ns T Y P . ,


    OCR Scan     		PDF 2SA1462 o2SC3735 2SA1462 JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor

    stk 2155

    Abstract: stk 490 110 2SC3733 transistor NPN 2sc3733 2SA1460 N50M 2sa1460-t
    Text: NEC i '> V = 3 > Silicon Tran sisto r 2S C 3 7 3 3 N P N J it x i f f l N PN Silicon Epitaxial Transistor High Speed S w itch in g , High Frequency A m plifier Industrial Use ^ H I/P A C K A G E D IM E N S IO N S 4 # * / FEATURES o ^ : i5 r L < 7 |iiii X 'f


    OCR Scan     		PDF 2SA1460 stk 2155 stk 490 110 2SC3733 transistor NPN 2sc3733 N50M 2sa1460-t

    2N1050A

    Abstract: T 3036 2N1047A 2N1049A 2N1048A 2n1048 2N1049
    Text: MIL I C | 000D12S DDDaDfl? T | SPECS M I L - S - l9 5 0 0 /1 7 6B 13 December 1971 SUPERSEDING M IL -S -1 9 5 0 0 /1 7 6A 10 N ovem ber 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1047A, 2N1048A, 2N1049A AND 2N1050A


    OCR Scan     		PDF 000D12S MIL-S-l9500/176B MIL-S-19500/176A 2N1047A, 2N1048A, 2N1049A 2N1050A 2N1047A 2N1048A 2N1050A T 3036 2n1048 2N1049

    3e tRANSISTOR

    Abstract: TT3010 TRANSISTOR XL08 4-0992 XL08 2SK446 SK-446 JE 33 T108 JE 720 transistor
    Text: NEC j m + T / v r x — Y = 7 > i > * 9 M O S Field E ffe c t P o w e r T r a n s is t o r A _ 2SK446 N f t ^ ^ < 7 y - ^ M O S F E T > jim m N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2 S K 4 4 6 ii, nmm/ p a c k a g e FETT,


    OCR Scan     		PDF 2SK446 SK446Ã Tstg64 0734i28- 075J22 26-/E 3e tRANSISTOR TT3010 TRANSISTOR XL08 4-0992 XL08 2SK446 SK-446 JE 33 T108 JE 720 transistor

    ic ntp- 3000

    Abstract: IIH13 Scans-0088096
    Text: z r— S 7 • 5^— h Com pound Transistor C E2A 3Q í&í¡fcF*3J & N P N x C E2A 3Q • i' t — ¿ Í S I i» ^ Y iP ^ M L tz , ^ H ig h 9 f- i i - n ^ M '> l □ ^ Vs? > '> * ? h F E ÎS ÎÆ R Â h 7 's ^ w 'J X 9 X % ? - r O A i K 7 i y ’m t l - C f t i l T t o


    OCR Scan     		PDF IEI-620) PWS10 TC-6083A ic ntp- 3000 IIH13 Scans-0088096

    3n108

    Abstract: transistor 3N108
    Text: I I 3N108 3N109 3N110 3N111 HIG H V O L T A G E S IL IC O N E P IT A X IA L J U N C T IO N INTEGRATED CHOPPER TRANSISTOR • L O W LEAKAGE • L O W C eb • L O W rEE sat • H IG H V EE & V EB ELECTRICAL DATA ABSOLUTE MAXIMUM RATING _ p a r a m e t e r _


    OCR Scan     		PDF 3N108 3N109 3N110 3N111 transistor 3N108

    2SK1132

    Abstract: TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B
    Text: MO M O S Field Effect Transistor MOS F E T 2SJ165 {i P • mm F E T T & 9, Ü X >f -y f - > ^ " r 'X ^ f X h L T H i t T - t c # tc , ± 0 :2 J V T R ^ ^ - f 'V F7 > y X ^ => 6‘ • x - i17 f £ - H i â ' C i '0 4-*•■■ < £> & o m 0.42 z s o & A ti4


    OCR Scan     		PDF 2SJ165 2SK1132 TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B

    2SA1177

    Abstract: I00MH 851G 8511
    Text: Ordering number:EN 851G _ 2SA1177 PNP Epitaxial Planar Silicon Transistor N0.851G HF Amp Applications Use . I d e a l l y s u i t e d f o r u s e i n FM RF a m p l i f i e r s , m i x e r s , o s c i l l a t o r s , c o n v e r t e r s , IF a m p l i f i e r s .


    OCR Scan     		PDF 2SA1177 30MHz 100MHz I00MH 851G 8511

    2SA1177

    Abstract: No abstract text available
    Text: Ordering number:EN 851G _ 2SA1177 PNP Epitaxial Planar Silicon Transistor N0.851G HF Amp Applications Use . I d e a l l y s u i t e d f o r u s e i n FM RF a m p l i f i e r s , m i x e r s , o s c i l l a t o r s , c o n v e r t e r s , IF a m p l i f i e r s .


    OCR Scan     		PDF 2SA1177 30MHz

    HT - 0886

    Abstract: HT 0886 g3je ht 9366 MARKING LE50 T108
    Text: NEC 1 î ^>— 57 . Ì / — h C om pound Transistor / \ 1 ' 7 t «F GN1A3Q & ^ •^ H ! W Ì o'<j tx m /L £ ftB itr o tte ( Ri = 1 .0 k û , 2.1 ±0.1 1.25 + 0.1 R 2 = 10 kQ O G A 1A 3Q £ 3 > r i) / > ? ') T îû tm T ' ë i t (T a = m z îv JX. ; 2


    OCR Scan     		PDF PWS10 CycleS50 HT - 0886 HT 0886 g3je ht 9366 MARKING LE50 T108

    la 5531

    Abstract: TC6116 TC-6116 TC 6116 fn1a3q FA1A3 Transistor L83
    Text: 7 s— S • 2 / — r* FAI A 3Q Compound Transistor # n m i t m ± : mm 2.8 + 0.2 1.5 (R i = 1.0 kQ, R 2= 10 kQ) o FN1A3Q £ ^ > v° 'J / 0 . 65-0.15 > ? 'J T'féffl T 'è £ 1" ( T a = 25 ° C ) g m -x. i 7 9 •^ -X fa ltE ?7f£) ^ u ? i7 ¡li;£


    OCR Scan     		PDF PWS10 la 5531 TC6116 TC-6116 TC 6116 fn1a3q FA1A3 Transistor L83