55LT
Abstract: No abstract text available
Text: 1014 - 12 12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE The 1014-12 is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
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200mA
55LT
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2 watt rf transistor
Abstract: 10 watt power transistor 100 watt transistor transistor Common Base amplifier RF TRANSISTOR 10 WATT common base transistor
Text: 1014 - 2 2 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55LT, STYLE 1 The 1014-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF Output Power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
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transistor s 1014
Abstract: common base transistor
Text: 1014 - 2 2 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55LT, STYLE 1 The 1014-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF Output Power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
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234 8715
Abstract: Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127 HFA3127B HFA3128 HFA3128B
Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays August 1996 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are
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HFA3046,
HFA3096,
HFA3127,
HFA3128
HFA3127
HFA3128
234 8715
Ic 9430
HFA3046
HFA3046B
HFA3096
HFA3096B
HFA3127B
HFA3128B
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HFA3046
Abstract: NPN Monolithic Transistor Pair HFA3046B HFA3046Y HFA3096 HFA3096B HFA3096Y HFA3127 HFA3127B HFA3128
Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are
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HFA3046,
HFA3096,
HFA3127,
HFA3128
HFA3127
HFA3128
HFA3046
NPN Monolithic Transistor Pair
HFA3046B
HFA3046Y
HFA3096
HFA3096B
HFA3096Y
HFA3127B
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transistor 224-1 base collector emitter
Abstract: transistor 0588
Text: SILICON TRANSISTOR NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C DESCRIPTION 0.42 ±0.06 0.42 ±0.06 0.25±0.02 3.0 PIN CONNECTIONS E: Emitter C: Collector
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NE461M02
OT-89
NE461M02
24-Hour
transistor 224-1 base collector emitter
transistor 0588
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HFA3046
Abstract: TYPE 85.54 542E02 542E-02
Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays March 1998 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are
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HFA3046,
HFA3096,
HFA3127,
HFA3128
HFA3127
HFA3128
HFA3046
TYPE 85.54
542E02
542E-02
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BLW80
Abstract: transistor rf m 1104
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW80 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the
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BLW80
BLW80
transistor rf m 1104
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transistor s11 s12 s21 s22
Abstract: NE856M02-T1-AZ NE856M02
Text: SILICON TRANSISTOR NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C E B E 0.8 MIN DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor
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OT-89
NE856M02
NE856M02
transistor s11 s12 s21 s22
NE856M02-T1-AZ
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BC849LT1
Abstract: No abstract text available
Text: BC859LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups A, B and C, according to its DC current gain. As complementary type the BC849LT1 is recommended. NPN transistor SOT-23 Plastic Package
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BC859LT1
BC849LT1
OT-23
120Hz
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BC849
Abstract: BC859
Text: BC859 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups A, B and C, according to its DC current gain. As complementary type the NPN transistor BC849 is recommended. SOT-23 Plastic Package
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BC859
BC849
OT-23
120Hz
BC859
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CA3096
Abstract: 40841 40841 dual gate mosfet CA3096AE CA3096E npn transistors,pnp transistors T2300B CA3096A CA3096AM CA3096AM96
Text: CA3096, CA3096A, CA3096C S E M I C O N D U C T O R NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of
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CA3096,
CA3096A,
CA3096C
CA3096C,
CA3096A
CA3096C
CA3096
40841
40841 dual gate mosfet
CA3096AE
CA3096E
npn transistors,pnp transistors
T2300B
CA3096AM
CA3096AM96
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BC849
Abstract: BC859
Text: BC859 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups A, B and C, according to its DC current gain. As complementary type the NPN transistor BC849 is recommended. SOT-23 Plastic Package
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BC859
BC849
OT-23
120Hz
BC859
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40841
Abstract: 40841 MOSFET 3096A CA3096A pnp array pnp npn dual emitter connected PNP Relay Driver T2300B CA3096AM CA3096AE
Text: CA3096, CA3096A, CA3096C S E M I C O N D U C T O R NPN/PNP Transistor Arrays August 1996 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of
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CA3096,
CA3096A,
CA3096C
CA3096C,
CA3096A
CA3096C
40841
40841 MOSFET
3096A
pnp array
pnp npn dual emitter connected
PNP Relay Driver
T2300B
CA3096AM
CA3096AE
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MCT8 opto
Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR
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MCT210
MCT26
MCT66
C1255
10TT1.
MCT8 opto
c1252
MCL601
MCT8 opto switch
C1246
4N25
4N26
4N27
4N28
4N35
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transistor NEC D 822 P
Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters
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2SC4226
2SC4226
SC-70
2SC4226-T1
2SC4226-T2
transistor NEC D 822 P
transistor number D 2498
702 mini transistor
NEC D 822 P
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bfr106
Abstract: No abstract text available
Text: • D02S20D 23T « a p x Philips S e m i c o n d u c t o r s _ Product specification AMER PHILIPS/ DIS CRETE b?E NPN 5 GHz wideband transistor DESCRIPTION c BFR106 PINNING NPN silicon planar epitaxial transistor In a plastic SOT23
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D02S20D
BFR106
bfr106
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Transistor TT 2144
Abstract: Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09
Text: HFA3046, HFA3096, HFA3127, HFA3128 H a r r is S E M I C O N D U C T O R March 1998 Ultra High Frequency Transistor Arrays Features Description • NPN Transistor f r . 8GHz • NPN Current Gain (hpE).
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HFA3046,
HFA3096,
HFA3127,
HFA3128
HFA3127
HFA3128
HFA3046
Transistor TT 2144
Sii 9573
2907 pnp transistor
NPN/Transistor TT 2144
Sii 9024
22E09
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SST918
Abstract: mmst5424 SST5424
Text: DIE No. NPN VHF/UHF TRANSISTOR DIE No. C—33 • DESCRIPTION EPITAXIAL PLANAR NPN SILICON TRANSISTOR ■MAXIMUM RATINGS T a= 2 5 ° C Symbol Value Unit Collector-Emitter Voltage VcEO 15 V Collector-Base Voltage VcBO 25 V Emitter-Base Voltage V ebo 2.5 V
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C--33
OT323)
600MHz
60MHz
SST918
mmst5424
SST5424
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Untitled
Abstract: No abstract text available
Text: FF 50 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V c es Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,25 R th J C 0,50 DC, pro Zweig / per arm
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3M035T7
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Untitled
Abstract: No abstract text available
Text: FZ 800 R 16 KF 1 Transistor Transistor Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0,020 °C/W R th J C Elektrische Eigenschaften Electrical properties V ces Maximum rated values 1600 V 800 A R th C K 150 °C - 40 / + 150 °C
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DQD2021
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • PACKAGE DIMENSIONS T h e C h a ra c te ris tic of C ro s s -M o d u la tio n is good. U nit: mm
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3SK223
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Untitled
Abstract: No abstract text available
Text: FF 50 R 06 KL 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 50 A V c es Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,25 R th J C DC, pro Baustein / per module
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3MD3217
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3SK243
Abstract: NEC 1369
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK243 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS T h e C h a ra cte ristic of C ro ss-M o d u la tio n is good. CM = 101 d B ju T Y P . @ f = 470 MHz, G r = -3 0 dB
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3SK243
3SK243
NEC 1369
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