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    TRANSISTOR BV-1 501 Search Results

    TRANSISTOR BV-1 501 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BV-1 501 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DE275X2-501N16A

    Abstract: No abstract text available
    Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-501N16A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in


    Original     		PDF DE275X2-501N16A DE275X2-501N16A

    Untitled

    Abstract: No abstract text available
    Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.


    Original     		PDF DE275X2-501N16A DE275X2-501N16A

    DE275X2-501N16A

    Abstract: "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2
    Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.


    Original     		PDF DE275X2-501N16A DE275X2-501N16A "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2

    220v ac to 12V 10A SMPS

    Abstract: smps 1000W 48V SMPS 1000w smps 500w half bridge 220v ac to 12V 20A SMPS TL431 928 smps 2000W VIPer smps 20w 12V flyback 1000w 500w half bridge smps
    Text: Switch Mode Power Supplies Discretes & Standard ICs Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Battery Charger and Adapter Front End Inrush PFC * Flyback Pout > 70W STBRXXX Bridge + + AC Post Regulation * TSM10x PWM + CV & CC


    Original     		PDF TSM10x TSM101 TSM102 TSM103 TSM104 PowerSO-10, Max220, Max247, ISOWATT220, 220v ac to 12V 10A SMPS smps 1000W 48V SMPS 1000w smps 500w half bridge 220v ac to 12V 20A SMPS TL431 928 smps 2000W VIPer smps 20w 12V flyback 1000w 500w half bridge smps

    nec 2501

    Abstract: nec 2501 optocoupler 2501 optocoupler nec 2701 optocoupler 2501 2701 optocoupler NEC-2701 optocoupler 2501 dip 2501 NEC nec optocoupler
    Text: California Eastern Laboratories Optocouplers Selection Guide NUMBERING SYSTEM All devices are available in lead free versions P S X X X X X — X — X — X— X Lead Finish None = Standard Finish A = Lead (Pb) Free Finish Identification number CTR Rank


    Original     		PDF PS28XX-1-F3 PS28XX-4-F3 PS2801-1-F3* PS2801-4-F3 PS28XX-4 nec 2501 nec 2501 optocoupler 2501 optocoupler nec 2701 optocoupler 2501 2701 optocoupler NEC-2701 optocoupler 2501 dip 2501 NEC nec optocoupler

    p421 coupler

    Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note
    Text: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety


    Original     		PDF TLP227GA TLP227G TLP227GA TLP227G/TLP597GA/TLP227GA-2 p421 coupler MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR KSA1370 CRT DISPLAY, VIDEO OUTPUT • High Voltage • Low Reverse Transfer Capacitance : CRE=1.7pF ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF KSA1370

    MSC1002

    Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition


    OCR Scan     		PDF 28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram

    transistor BV-1 501

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSC1395 TV VHF TUNER OSCILLATOR • High Current-Gain Bandwidth Product fT=600MHz Min • Output Capacitance Cob=1.5pF (Max) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Sym bol Rating Unit VcBO VcEO V ebo ic Pc Tj


    OCR Scan     		PDF KSC1395 600MHz Q02U7MQ transistor BV-1 501

    DTA144GKA

    Abstract: inverter ic marking H.A
    Text: DTA144GE DTA144GUA DTA144GKA Digital transistor, PNP, with 1 resistor Features Dimensions Units : mm • available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages package marking: DTA144GE, DTA144GUA, and DTA144GKA; K16 DTA144GE (EMT3) •


    OCR Scan     		PDF DTA144GE DTA144GUA DTA144GKA SC-70) SC-59) DTA144GE, DTA144GUA, DTA144GKA; DTA144GE DTA144GUA inverter ic marking H.A

    BV 1 501

    Abstract: BV 501 transistor BV-1 501
    Text: 2N6516 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VcEtf'SOOV • Colleclor Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25t) Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 2N6516 625mW 2N6515 lc-10mA, 100mA, 300iE BV 1 501 BV 501 transistor BV-1 501

    Untitled

    Abstract: No abstract text available
    Text: S A M SUNG SEMICONDUCTOR INC ' MMESAÖ11C8 «E O | Vil.Ml« 0 0 0 7 2 3 1 î | PHP EPITAXIAL SILICON TRANSISTOR T - a s - a DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Cotlector-Base Voltage Vc8 0 Collector-Em itter Voltage


    OCR Scan     		PDF OT-23

    MCA255

    Abstract: C1894 C2090 MCA230 MCA231 Quality Technologies optocouplers
    Text: QUALITY TECHNOLOGIES PHOTODARLINGTON OPTOCOUPLERS MCA230 MCA231 MCA255 PACKAGE db dh .Æ DESCRIPTION r- 6.86 6.3S o The MCA230, MCA231 and MCA255 are photodarlington optically coupled isolators. An infrared emitting diode coupled with a silicon photodarlington


    OCR Scan     		PDF ri-78TYP C2090 C2084 MCA230 MCA231 MCA255 MCA230, MCA230/255 C1894 Quality Technologies optocouplers

    2SB1181

    Abstract: 2SB1241 2SB1260 2SD1898
    Text: 2SB1260 / 2SB1181 /2SB1241 Transistors Power Transistor -80V, -1 A 2SB1260 / 2SB118112SB1241 •External dimensions (Units : mm) •Features 1) High breakdown voltage and high current. B V ceo = -8 0 V , lc = -1 A 2) Good hFE linearity. 3 ) LOW VcE(sat).


    OCR Scan     		PDF 2SB1260 2SB1181 /2SB1241 2SB1260/2SB1181 2SD1898 2SD186312SD1733. 2SB1260 2SB1181 SC-62 2SB1241

    ScansU9X27

    Abstract: No abstract text available
    Text: Transistors Power Transistor - 80V, -1 A 2SB1260/2SB1181/2SB1241 •Features 1) High breakdown voltage and high current. V c e o = -80V, Ic = -1 A 2) Good fiFE linearity. 3 ) Low VcE(sai). 4) Complements the 2SD1898/ 2SD1863/2SD1733. •External dimensions (Units: mm)


    OCR Scan     		PDF 2SB1260/2SB1181/2SB1241 2SD1898/ 2SD1863/2SD1733. 2SB1260 2SB1241, 2SB1181 ScansU9X27

    MCA2255Z

    Abstract: MCA2231Z MCA2230Z
    Text: QUALITY TECHNOLOGIES VDE APPROVED 1 p h o t o d a r lin g t o n o p t o c o u p l e r s MCA2230Z MCA2231Z MCA2255Z tz z f DESCRIPTION 1 6.86 6.35 The MCA2230, MCA2231 and MCA2255 are photodarlington optically coupled isolators. An infrared emitting diode coupled with a silicon photodarlington


    OCR Scan     		PDF MCA2230Z MCA2231Z MCA2255Z MCA2230, MCA2231 MCA2255 MCA2230 MCA2231, MCA2255 C2090 MCA2255Z

    Untitled

    Abstract: No abstract text available
    Text: Transistors General Purpose Transistor Isolated Dual Transistors IMZ4 • F e a tu re s 1) B o th • E x te rn a l dim en sio n s (U n its: mm) 2SA 1036K c h ip an d 2 S C 4 1 1K ch ip in a SM T p ackag e. 2.9±0.2 1.9±0.2 2 ) M ounting p o ssib le w ith SM T3 au ­


    OCR Scan     		PDF 1036K SC-74 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP.

    Untitled

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F ►External dim ensions (Units: mm) •F e a tu re s 1) High V ceo. V = 80V ceo 2SD1898 2) High IC. Ic = 1 A (D C ) 3) G ood hre linearity. 4) c + 0 .2 5 - 0.1 1.6 ± 0.1


    OCR Scan     		PDF 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F 2SD1898 1260/2S 2SB1181. SC-62 2SD1768S 2SD1733 2SD1863) 2SD1898) 2SD1381F)

    transistor tt 2222

    Abstract: 9 BJE 53 mj 1504 transistor BFQ42 mj 1504 BLW29 tt 2222 transistor l5
    Text: • bbSBTBl OOSTSflM ÔG7 H A P X N AtlER PHILIPS/DISCRETE BLW29 b*ÎE T> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. Because o f the high gain and excellent power


    OCR Scan     		PDF BLW29 BFQ42 bb531Bl 7Z77586 7Z77587 transistor tt 2222 9 BJE 53 mj 1504 transistor mj 1504 BLW29 tt 2222 transistor l5

    T108

    Abstract: T109
    Text: IMZ3A h -7 > v Z ^ /T ra n s is to rs I M 7 ^ A IIV Ifc O # % T M V U - X 7 K U - ^ î K t / W ^ Isolated Mini-Mold Device —S x 'h Îi^ -ü 'M /G e n e ra l Small Signal Amp. Dimensions Unit : mm t 1) SMT (SC-59) t H —fiflllC PNP N PN<D2<B<7) h 2) g  fr 'n J


    OCR Scan     		PDF IM71A SC-59) SC-74. T108 T109

    transistor pnp a111

    Abstract: NA41U TO-126 ON 150 watt hf transistor 12 volt PJO 390 CM NA42 NA42U NB021EY NB211YY NR001E
    Text: NA41 NPN , NA42(PNP) Na j U^STMICOND {DISCRETE} ^ 5JIL13JL N A T L äfl SEMI C O N D (DISCRETE) National Semiconductor NA41(NPN) NA42(PNP) Dlf| bSD1130 DOaSSbT 7 28C 2 .5 Amp com plem entary p o w e r tra n s is to rs fl~| packages and lead coding features


    OCR Scan     		PDF bSD113D O-126 O-220 O-126 O-220 hSD113D NB021EY NB211YY NR001E NA41U transistor pnp a111 NA41U TO-126 ON 150 watt hf transistor 12 volt PJO 390 CM NA42 NA42U NB021EY NB211YY NR001E

    A854S

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S • F e a tu re s 1) •E x te rn a l dim ensions (Units: mm) Large lc. Icmbx, — —500mA 2SA1577 2SA1036K 2) Low VcEisat). O p tim a l fo r lo w -v o ltage operation. 3) Com plem ents the 2SC 2411K/


    OCR Scan     		PDF 2SA1036K/2SA1577/2SA854S 2SA1036K 2SA1577 --500mA 2411K/ 2SC1741S/2SC4097. SC-59 SC-70 A854S

    d1189f

    Abstract: 2SB891 d1758 2SB891F 2sb1188 2sb1277
    Text: Transistors Medium power Transistor -32V, -2A 2 S B 1 1 8 8 /2 S B 1 1 8 2 /2 S B 1 2 4 0 /2 S B 8 9 1 F / 2 S B 8 2 2 /2 S B 1 2 7 7 /2 S B 9 1 1 M •F e a tu re s 1) ^External dim ensions (Units: m m ) LOW VcE(sat). 2SB1188 VcElsat; = —0 .5 V (Typ.)


    OCR Scan     		PDF 2SB1188 2SB1182 2SB1188) 2SB1182) 2SB891) 2SB1188/2SB1182/2SB1240/2SB891F/ 2SB822/2SB1277/2SB911M 2SB891 d1189f 2SB891 d1758 2SB891F 2sb1188 2sb1277

    MMBT5086

    Abstract: TRANSISTOR 501 sot23 marking 501
    Text: INC ' SAMSUNG SEMICONDUCTOR M M E S A Ö 1 1C8 «E | T i l l i n g 00 07 2 3 1 T | O PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Cotlector-Base Voltage Vc8 0 Collector-Emitter Voltage


    OCR Scan     		PDF 71MI142 MMBT5086 OT-23 100mA, 10fiA, 100MHz TRANSISTOR 501 sot23 marking 501