TRANSISTOR BV-1 501 Search Results

TRANSISTOR BV-1 501 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BV-1 501 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
DE275X2-501N16A Abstract: No abstract text available Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-501N16A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in	Original	DE275X2-501N16A DE275X2-501N16A	PDF
Untitled Abstract: No abstract text available Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.	Original	DE275X2-501N16A DE275X2-501N16A	PDF
DE275X2-501N16A Abstract: "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2 Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.	Original	DE275X2-501N16A DE275X2-501N16A "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2	PDF
220v ac to 12V 10A SMPS Abstract: smps 1000W 48V SMPS 1000w smps 500w half bridge 220v ac to 12V 20A SMPS TL431 928 smps 2000W VIPer smps 20w 12V flyback 1000w 500w half bridge smps Text: Switch Mode Power Supplies Discretes & Standard ICs Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Battery Charger and Adapter Front End Inrush PFC * Flyback Pout > 70W STBRXXX Bridge + + AC Post Regulation * TSM10x PWM + CV & CC	Original	TSM10x TSM101 TSM102 TSM103 TSM104 PowerSO-10, Max220, Max247, ISOWATT220, 220v ac to 12V 10A SMPS smps 1000W 48V SMPS 1000w smps 500w half bridge 220v ac to 12V 20A SMPS TL431 928 smps 2000W VIPer smps 20w 12V flyback 1000w 500w half bridge smps	PDF
nec 2501 Abstract: nec 2501 optocoupler 2501 optocoupler nec 2701 optocoupler 2501 2701 optocoupler NEC-2701 optocoupler 2501 dip 2501 NEC nec optocoupler Text: California Eastern Laboratories Optocouplers Selection Guide NUMBERING SYSTEM All devices are available in lead free versions P S X X X X X — X — X — X— X Lead Finish None = Standard Finish A = Lead (Pb) Free Finish Identification number CTR Rank	Original	PS28XX-1-F3 PS28XX-4-F3 PS2801-1-F3* PS2801-4-F3 PS28XX-4 nec 2501 nec 2501 optocoupler 2501 optocoupler nec 2701 optocoupler 2501 2701 optocoupler NEC-2701 optocoupler 2501 dip 2501 NEC nec optocoupler	PDF
p421 coupler Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note Text: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety	Original	TLP227GA TLP227G TLP227GA TLP227G/TLP597GA/TLP227GA-2 p421 coupler MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note	PDF
Untitled Abstract: No abstract text available Text: PNP EPITAXIAL SILICON TRANSISTOR KSA1370 CRT DISPLAY, VIDEO OUTPUT • High Voltage • Low Reverse Transfer Capacitance : CRE=1.7pF ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current	OCR Scan	KSA1370	PDF
MSC1002 Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition	OCR Scan	28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram	PDF
transistor BV-1 501 Abstract: No abstract text available Text: NPN EPITAXIAL SILICON TRANSISTOR KSC1395 TV VHF TUNER OSCILLATOR • High Current-Gain Bandwidth Product fT=600MHz Min • Output Capacitance Cob=1.5pF (Max) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Sym bol Rating Unit VcBO VcEO V ebo ic Pc Tj	OCR Scan	KSC1395 600MHz Q02U7MQ transistor BV-1 501	PDF
DTA144GKA Abstract: inverter ic marking H.A Text: DTA144GE DTA144GUA DTA144GKA Digital transistor, PNP, with 1 resistor Features Dimensions Units : mm • available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages package marking: DTA144GE, DTA144GUA, and DTA144GKA; K16 DTA144GE (EMT3) •	OCR Scan	DTA144GE DTA144GUA DTA144GKA SC-70) SC-59) DTA144GE, DTA144GUA, DTA144GKA; DTA144GE DTA144GUA inverter ic marking H.A	PDF
BV 1 501 Abstract: BV 501 transistor BV-1 501 Text: 2N6516 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VcEtf'SOOV • Colleclor Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25t) Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	2N6516 625mW 2N6515 lc-10mA, 100mA, 300iE BV 1 501 BV 501 transistor BV-1 501	PDF
Untitled Abstract: No abstract text available Text: S A M SUNG SEMICONDUCTOR INC ' MMESAÖ11C8 «E O \| Vil.Ml« 0 0 0 7 2 3 1 î \| PHP EPITAXIAL SILICON TRANSISTOR T - a s - a DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Cotlector-Base Voltage Vc8 0 Collector-Em itter Voltage	OCR Scan	OT-23	PDF
MCA255 Abstract: C1894 C2090 MCA230 MCA231 Quality Technologies optocouplers Text: QUALITY TECHNOLOGIES PHOTODARLINGTON OPTOCOUPLERS MCA230 MCA231 MCA255 PACKAGE db dh .Æ DESCRIPTION r- 6.86 6.3S o The MCA230, MCA231 and MCA255 are photodarlington optically coupled isolators. An infrared emitting diode coupled with a silicon photodarlington	OCR Scan	ri-78TYP C2090 C2084 MCA230 MCA231 MCA255 MCA230, MCA230/255 C1894 Quality Technologies optocouplers	PDF
2SB1181 Abstract: 2SB1241 2SB1260 2SD1898 Text: 2SB1260 / 2SB1181 /2SB1241 Transistors Power Transistor -80V, -1 A 2SB1260 / 2SB118112SB1241 •External dimensions (Units : mm) •Features 1) High breakdown voltage and high current. B V ceo = -8 0 V , lc = -1 A 2) Good hFE linearity. 3 ) LOW VcE(sat).	OCR Scan	2SB1260 2SB1181 /2SB1241 2SB1260/2SB1181 2SD1898 2SD186312SD1733. 2SB1260 2SB1181 SC-62 2SB1241	PDF

ScansU9X27 Abstract: No abstract text available Text: Transistors Power Transistor - 80V, -1 A 2SB1260/2SB1181/2SB1241 •Features 1) High breakdown voltage and high current. V c e o = -80V, Ic = -1 A 2) Good fiFE linearity. 3 ) Low VcE(sai). 4) Complements the 2SD1898/ 2SD1863/2SD1733. •External dimensions (Units: mm)	OCR Scan	2SB1260/2SB1181/2SB1241 2SD1898/ 2SD1863/2SD1733. 2SB1260 2SB1241, 2SB1181 ScansU9X27	PDF
MCA2255Z Abstract: MCA2231Z MCA2230Z Text: QUALITY TECHNOLOGIES VDE APPROVED 1 p h o t o d a r lin g t o n o p t o c o u p l e r s MCA2230Z MCA2231Z MCA2255Z tz z f DESCRIPTION 1 6.86 6.35 The MCA2230, MCA2231 and MCA2255 are photodarlington optically coupled isolators. An infrared emitting diode coupled with a silicon photodarlington	OCR Scan	MCA2230Z MCA2231Z MCA2255Z MCA2230, MCA2231 MCA2255 MCA2230 MCA2231, MCA2255 C2090 MCA2255Z	PDF
Untitled Abstract: No abstract text available Text: Transistors General Purpose Transistor Isolated Dual Transistors IMZ4 • F e a tu re s 1) B o th • E x te rn a l dim en sio n s (U n its: mm) 2SA 1036K c h ip an d 2 S C 4 1 1K ch ip in a SM T p ackag e. 2.9±0.2 1.9±0.2 2 ) M ounting p o ssib le w ith SM T3 au	OCR Scan	1036K SC-74 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP.	PDF
Untitled Abstract: No abstract text available Text: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F ►External dim ensions (Units: mm) •F e a tu re s 1) High V ceo. V = 80V ceo 2SD1898 2) High IC. Ic = 1 A (D C ) 3) G ood hre linearity. 4) c + 0 .2 5 - 0.1 1.6 ± 0.1	OCR Scan	2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F 2SD1898 1260/2S 2SB1181. SC-62 2SD1768S 2SD1733 2SD1863) 2SD1898) 2SD1381F)	PDF
transistor tt 2222 Abstract: 9 BJE 53 mj 1504 transistor BFQ42 mj 1504 BLW29 tt 2222 transistor l5 Text: • bbSBTBl OOSTSflM ÔG7 H A P X N AtlER PHILIPS/DISCRETE BLW29 b*ÎE T> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. Because o f the high gain and excellent power	OCR Scan	BLW29 BFQ42 bb531Bl 7Z77586 7Z77587 transistor tt 2222 9 BJE 53 mj 1504 transistor mj 1504 BLW29 tt 2222 transistor l5	PDF
T108 Abstract: T109 Text: IMZ3A h -7 > v Z ^ /T ra n s is to rs I M 7 ^ A IIV Ifc O # % T M V U - X 7 K U - ^ î K t / W ^ Isolated Mini-Mold Device —S x 'h Îi^ -ü 'M /G e n e ra l Small Signal Amp. Dimensions Unit : mm t 1) SMT (SC-59) t H —fiflllC PNP N PN<D2<B<7) h 2) g Â fr 'n J	OCR Scan	IM71A SC-59) SC-74. T108 T109	PDF
transistor pnp a111 Abstract: NA41U TO-126 ON 150 watt hf transistor 12 volt PJO 390 CM NA42 NA42U NB021EY NB211YY NR001E Text: NA41 NPN , NA42(PNP) Na j U^STMICOND {DISCRETE} ^ 5JIL13JL N A T L äfl SEMI C O N D (DISCRETE) National Semiconductor NA41(NPN) NA42(PNP) Dlf\| bSD1130 DOaSSbT 7 28C 2 .5 Amp com plem entary p o w e r tra n s is to rs fl~\| packages and lead coding features	OCR Scan	bSD113D O-126 O-220 O-126 O-220 hSD113D NB021EY NB211YY NR001E NA41U transistor pnp a111 NA41U TO-126 ON 150 watt hf transistor 12 volt PJO 390 CM NA42 NA42U NB021EY NB211YY NR001E	PDF
A854S Abstract: No abstract text available Text: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S • F e a tu re s 1) •E x te rn a l dim ensions (Units: mm) Large lc. Icmbx, — —500mA 2SA1577 2SA1036K 2) Low VcEisat). O p tim a l fo r lo w -v o ltage operation. 3) Com plem ents the 2SC 2411K/	OCR Scan	2SA1036K/2SA1577/2SA854S 2SA1036K 2SA1577 --500mA 2411K/ 2SC1741S/2SC4097. SC-59 SC-70 A854S	PDF
d1189f Abstract: 2SB891 d1758 2SB891F 2sb1188 2sb1277 Text: Transistors Medium power Transistor -32V, -2A 2 S B 1 1 8 8 /2 S B 1 1 8 2 /2 S B 1 2 4 0 /2 S B 8 9 1 F / 2 S B 8 2 2 /2 S B 1 2 7 7 /2 S B 9 1 1 M •F e a tu re s 1) ^External dim ensions (Units: m m ) LOW VcE(sat). 2SB1188 VcElsat; = —0 .5 V (Typ.)	OCR Scan	2SB1188 2SB1182 2SB1188) 2SB1182) 2SB891) 2SB1188/2SB1182/2SB1240/2SB891F/ 2SB822/2SB1277/2SB911M 2SB891 d1189f 2SB891 d1758 2SB891F 2sb1188 2sb1277	PDF
MMBT5086 Abstract: TRANSISTOR 501 sot23 marking 501 Text: INC ' SAMSUNG SEMICONDUCTOR M M E S A Ö 1 1C8 «E \| T i l l i n g 00 07 2 3 1 T \| O PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Cotlector-Base Voltage Vc8 0 Collector-Emitter Voltage	OCR Scan	71MI142 MMBT5086 OT-23 100mA, 10fiA, 100MHz TRANSISTOR 501 sot23 marking 501	PDF

TRANSISTOR BV-1 501 Search Results

TRANSISTOR BV-1 501 Result Highlights (5)

TRANSISTOR BV-1 501 Datasheets Context Search

DE275X2-501N16A

Untitled

DE275X2-501N16A

220v ac to 12V 10A SMPS

nec 2501

p421 coupler

Untitled

MSC1002

transistor BV-1 501

DTA144GKA

BV 1 501

Untitled

MCA255

2SB1181

ScansU9X27

MCA2255Z

Untitled

Untitled

transistor tt 2222

T108

transistor pnp a111

A854S

d1189f

MMBT5086