TRANSISTOR BUT 33 Search Results

TRANSISTOR BUT 33 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BUT 33 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Preliminary SGA-8543Z Product Description Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50 MHz to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can	Original	SGA-8543Z SGA-8543Z EDS-102583	PDF
J119 transistor Abstract: bipolar transistor ghz s-parameter 140C SGA-8543Z SiGe POWER TRANSISTOR Text: Preliminary SGA-8543Z Product Description Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can be	Original	SGA-8543Z SGA-8543Z EDS-102583 J119 transistor bipolar transistor ghz s-parameter 140C SiGe POWER TRANSISTOR	PDF
simplest flyback converter Abstract: PB2134 isolated flyback converter with optocoupler optocoupler based isolated dc to dc converter LT1725 LTC4257-1 2N7002 B0540W BAS21LT1 MMBT3904 Text: advertisement Power over Ethernet Isolated Power Supply Delivers 11.5W at 90% Efficiency – Design Note 338 Jesus Rosales switches to turn on and off the better. A push-pull converter could be used, but the additional complexity is not justified at this power level. A single transistor forward	Original	DN338 LT1725 dn338f simplest flyback converter PB2134 isolated flyback converter with optocoupler optocoupler based isolated dc to dc converter LT1725 LTC4257-1 2N7002 B0540W BAS21LT1 MMBT3904	PDF
2SC3355 SPICE MODEL Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness	Original	F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101	PDF
8543 Abstract: 2.4 ghz passive rfid Z1 SOT343 EDS-102583 Text: Advanced Information Product Description Sirenza Microdevices’ SGA-8543 is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 3.5 GHz. The SGA-8543 is optimized for 3V operation but can be biased at 2V for lowvoltage battery operated systems. The device provides low	Original	SGA-8543 SGA-8543 8543 2.4 ghz passive rfid Z1 SOT343 EDS-102583	PDF
2n2222 transistor pin b c e Abstract: by205 2n2222 h parameter values BUT11 Text: BUT11 NPN SILICON POWER TRANSISTOR Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 5 A Continuous Collector Current This series is currently available, but not recommended for new designs. B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.	Original	BUT11 O-220 SAP791AB 2n2222 transistor pin b c e by205 2n2222 h parameter values	PDF
Untitled Abstract: No abstract text available Text: BUT11 NPN SILICON POWER TRANSISTOR Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 5 A Continuous Collector Current This series is currently available, but not recommended for new designs. B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.	Original	BUT11 O-220 SAP791AB	PDF
ic mm74hc Abstract: triggering scr with microprocessor cmos scr AN-339 national MM74HC SCR TRIGGER PULSE circuit AN-339 CD4000 MM74C 74HC Text: Fairchild Semiconductor Application Note 339 November 1987 INTRODUCTION SCR latch-up is a parasitic phenomena that has existed in circuits fabricated using bulk silicon CMOS technologies. The latch-up mechanism, once triggered, turns on a parasitic SCR internal to CMOS circuits which essentially shorts VCC	Original	MM54HC/MM74HC ic mm74hc triggering scr with microprocessor cmos scr AN-339 national MM74HC SCR TRIGGER PULSE circuit AN-339 CD4000 MM74C 74HC	PDF
pass transistor Abstract: transistor D3 5v power transistor AN3333 APP3333 MAX5024 TIP32B Vbe 40 transistor linear regulator 48V linear regulator application Text: Maxim/Dallas > App Notes > AUTOMOTIVE POWER-SUPPLY CIRCUITS Keywords: linear regulators, pass transistors Aug 30, 2004 APPLICATION NOTE 3333 Pass Transistor Enhances Regulator's Output Current A 5V linear regulator with external pass transistor which provides an additional, parallel path for load current	Original	150mA 300mA) 300mA. com/an3333 MAX5024: AN3333, APP3333, Appnote3333, pass transistor transistor D3 5v power transistor AN3333 APP3333 MAX5024 TIP32B Vbe 40 transistor linear regulator 48V linear regulator application	PDF
Untitled Abstract: No abstract text available Text: EE 330 Spring 2014 Laboratory 8: Semiconductor Parameter Measurements Objective: The objective of this laboratory experiment is to become familiar with using a semiconductor parameter analyzer for extracting model parameters for devices. A second objective is to	Original	2N4400 Q4015L5 Q4010LS2	PDF
STRAIN GAUGE Abstract: an3396 wheatstone bridge pressure sensor Wheatstone Bridge signal conditioning ICS for strain gauge full bridge strain gauge pressure sensor strain sensor strain gauge sensor bdr boost full bridge strain gage pressure sensor Text: Maxim > App Notes > SENSOR SIGNAL CONDITIONERS Keywords: Sensor, sensor signal conditioning, sensor conditioner, strain gauge, sensor compensation, strain gauge compensation, pressure sensor calibration, pressure sensor compensation Nov 11, 2004 APPLICATION NOTE 3396	Original	com/an3396 MAX1452: MAX1455: AN3396, APP3396, Appnote3396, STRAIN GAUGE an3396 wheatstone bridge pressure sensor Wheatstone Bridge signal conditioning ICS for strain gauge full bridge strain gauge pressure sensor strain sensor strain gauge sensor bdr boost full bridge strain gage pressure sensor	PDF
TRANSISTOR P84 Abstract: AVAL DATA PKW 1100 prom Programmers p83 transistor aval pkw 1100 AVAL DATA PKW 1100 transistor p86 transistor p35 transistor p87 AN32045 1TA252E00 Text: Ordering number: EN 5632 LC86E5032 CMOS LSI LC86E5032 8-Bit Single-Chip Microcontroller Preliminary Overview Package Dimensions unit : mm 3126-DIC64S [LC86E5032] 64 33 1 32 19.05 58.0 1.27 0.9 0.46 1.778 3.4min 5.8max 0.25 18.8 The LC86E5032 microcontroller, a new addition to the	Original	LC86E5032 3126-DIC64S LC86E5032] LC86E5032 LC865000 32Kbyte DIC64S 3194-QFC64E TRANSISTOR P84 AVAL DATA PKW 1100 prom Programmers p83 transistor aval pkw 1100 AVAL DATA PKW 1100 transistor p86 transistor p35 transistor p87 AN32045 1TA252E00	PDF
spice model three phase TRANSFORMER Abstract: Spice model xfmr xfmr spice alimentation decoupage spice model 1n4148 Christophe Basso SUBCKT XFMR 1 2 3 4. RP 1 2 1MEG three winding transformer MTD1N60E MUR1100E Text: MOTOROLA Order this document by AN1679/D SEMICONDUCTOR APPLICATION NOTE AN1679 How to deal with Leakage Elements in FLYBACK Converters Christophe BASSO, MOTOROLA SPS BP–1029, Le Mirail, 31023 Toulouse France e–mail: R38010@email.sps.mot.com; Tel.: 33 5 61 19 90 12	Original	AN1679/D AN1679 R38010 spice model three phase TRANSFORMER Spice model xfmr xfmr spice alimentation decoupage spice model 1n4148 Christophe Basso SUBCKT XFMR 1 2 3 4. RP 1 2 1MEG three winding transformer MTD1N60E MUR1100E	PDF
calculation of IGBT snubber Abstract: Snubber circuits theory, design and application 1 Snubber circuits theory, design and application calculation of diode snubber tranzorb diode igbt types IGBT snubber for inductive load APT0404 TRANZORB Snubber circuits theory Text: Application Note APT0404 December 2004 Turn-Off Snubber Design for High Frequency Modules Serge Bontemps R & D Manager Advanced Power Technology Europe, Chemin de Magret, 33700, Merignac, France Turn-off snubbers are passive circuits made of diodes, resistors and capacitors dedicated to	Original	APT0404 APTGF300A120 calculation of IGBT snubber Snubber circuits theory, design and application 1 Snubber circuits theory, design and application calculation of diode snubber tranzorb diode igbt types IGBT snubber for inductive load APT0404 TRANZORB Snubber circuits theory	PDF

spice model three phase TRANSFORMER Abstract: three-winding transformer SUBCKT XFMR 1 2 3 4. RP 1 2 1MEG 3 phase to d-q transformation spice offline switchmode -flyback spice model mesh TRANSFORMER 1N4937 pspice spice model of power TRANSFORMER AN1679 xfmr spice Text: AN1679/D How to deal with Leakage Elements in Flyback Converters http://onsemi.com Prepared by: Christophe Basso ON Semiconductor 14, rue Paul Mesplé – BP1112 – 31035 TOULOUSE Cedex 1, France 33 0 5 34 61 11 54 e–mail: christophe.basso@onsemi.com INTRODUCTION	Original	AN1679/D BP1112 r14525 spice model three phase TRANSFORMER three-winding transformer SUBCKT XFMR 1 2 3 4. RP 1 2 1MEG 3 phase to d-q transformation spice offline switchmode -flyback spice model mesh TRANSFORMER 1N4937 pspice spice model of power TRANSFORMER AN1679 xfmr spice	PDF
spice model three phase TRANSFORMER Abstract: AN1679 Christophe Basso three-winding transformer Spice model xfmr spice model mesh TRANSFORMER SEM500 spice model of power TRANSFORMER Severns spice model 1n4148 Text: AN1679/D How to deal with Leakage Elements in Flyback Converters http://onsemi.com Prepared by: Christophe Basso ON Semiconductor 14, rue Paul Mesplé – BP1112 – 31035 TOULOUSE Cedex 1, France 33 0 5 34 61 11 54 e–mail: christophe.basso@onsemi.com INTRODUCTION	Original	AN1679/D BP1112 r14525 spice model three phase TRANSFORMER AN1679 Christophe Basso three-winding transformer Spice model xfmr spice model mesh TRANSFORMER SEM500 spice model of power TRANSFORMER Severns spice model 1n4148	PDF
UC3842 SMD Abstract: smd transistor 5k PAE18K110Y1 flyback transformer design uc3842 uc3842 application 600V SMD Transistor 30w flyback uc3842 power supply universal power supply with uc3842 DIODE SMD 1206 philips make UC3842 step up converter Text: PREMO S.A. Subject Universal 30W Power Supply, isolated, single output 12V/2.5 A Application Objective Industrial Applications Document ID NA-11 Date June 9th, 2004 Revision 1 PREMO S.A. Conxita Supervia 13, Barcelona (Spain) Tel: +34 93 409 89 80 Fax.: +34 93 330 75 02	Original	NA-11 UC3842 SMD smd transistor 5k PAE18K110Y1 flyback transformer design uc3842 uc3842 application 600V SMD Transistor 30w flyback uc3842 power supply universal power supply with uc3842 DIODE SMD 1206 philips make UC3842 step up converter	PDF
730A-04 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE UL C8A ®®®® 8ETI 8EMK0 DEMKO NEMKO BUT GlobalOptobolator 6-Pin DIP Optoisolators High Voltage Transistor Output 400 Volts [CTR • 20% Min] [CTR « 10% Min] [CTR ■ S% Min] ‘ Motorola Preferred Device	OCR Scan	MOC8204, MOC8205 MOC8204* MOC8206 MOC82Q4 MQC8206 730A-04	PDF
AEG T 25 N 1000 Abstract: ps2ms QS 100 NPN Transistor S100 NPN Transistor BYV16 MS 3894 N BUT54 Text: A E G CORP 17E D QQSTMSta OGQTSSl Q BUT 54 electronic r - 33-13 C^atN«Tech«j*os'es Silicon NPN Power Transistor A p p lic a tio n : Sw itching mode power supply, electronic ballast Features: • In multi diffusion technique Short sw itching tim e • Glass passivation	OCR Scan	QG2T42b T-33-13 AEG T 25 N 1000 ps2ms QS 100 NPN Transistor S100 NPN Transistor BYV16 MS 3894 N BUT54	PDF
BUT93 Abstract: BY22B T3311 C 3311 transistor 14A3 BFX34 BY228 AEG v 300 transistor sc3 T-33-11 Text: A E G CORP 17E D 002=142^ G QCHSBI fi BUT 93 •BHILIIFmiMKiliia electronic Creative Technologies r-2 3 -il Silicon NPN Power Transistor A p p lic a tio n : Switching mode power supply, electronic ballast Features: • In m ulti diffusion technique • Short sw itching tim e	OCR Scan	r-23-il 0G2142b T-33-11 BUT93 BY22B T3311 C 3311 transistor 14A3 BFX34 BY228 AEG v 300 transistor sc3 T-33-11	PDF
transistor Bc 542 Abstract: transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A Text: 17E 1> • ô'iëO O 'lL 000155? TELEFUNKEN ELE CTRONIC BUT 56 • BUT 56 A TTilUlFiyjlìSKiìii electronic Crttve Tèehooogs T*-33-f3 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times	OCR Scan	33-r2 a75ttti DIN41 T0126 15A3DIN transistor Bc 542 transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A	PDF
3772 stepper Abstract: CL-21 capacitor LM 3771 GOQ1744 PBL3772 pbl 3960 hh2 ericsson 000174D Text: ERICSSON COMPONENTS INC ERICSSON ILE 1 M 3373t80 0001740 2 • ^ September 1989 _ _ _T - M Z - I 3 - Z Ì PBL 3772 Dual Stepper Motor Driver Preliminary Data) Description Key Features The PBL 3772 is a switch-mode (chopper), constant-current driver IC with two chan	OCR Scan	3373bfl0 000174D T-41-13-ZS PBL3772 S-164 3772 stepper CL-21 capacitor LM 3771 GOQ1744 pbl 3960 hh2 ericsson	PDF
4229P-L00-3C8 Abstract: 20A400 MJ12005D POT CORE 4229P-L00 Ferrox EC52-3C8 Text: MOTOROLA SC XST R S/ R F ME D I t3b75sq 0 0850 17 0 \| ^ 33-/3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e sig n o rw D ata Sheet 8.0 AMPERE NPN SILICON POWER TRANSISTORS NPN HORIZONTAL DEFLECTION TRANSISTOR WITH INTEGRATED DAMPER DIODE 1500 VOLTS 100 WATTS . . . specifically designed for use in large-screen color-deflection	OCR Scan	t3b75sq MJ12005D C01LECT0 4229P-L00-3C8 20A400 MJ12005D POT CORE 4229P-L00 Ferrox EC52-3C8	PDF
S 170 MOSFET TRANSISTOR Abstract: 4-869 diode AN569 MTP33N10E Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP33N10E TM O S E -FE T ™ P o w er Field E ffe c t T ran sisto r Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 33 AMPERES 100 VOLTS RDS on = °-06 OHM	OCR Scan	MTP33N10E 0E-05 0E-04 0E-03 0E-02 0E-01 S 170 MOSFET TRANSISTOR 4-869 diode AN569	PDF

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TRANSISTOR BUT 33 Search Results

TRANSISTOR BUT 33 Result Highlights (5)

TRANSISTOR BUT 33 Datasheets Context Search

Untitled

J119 transistor

simplest flyback converter

2SC3355 SPICE MODEL

8543

2n2222 transistor pin b c e

Untitled

ic mm74hc

pass transistor

Untitled

STRAIN GAUGE

TRANSISTOR P84

spice model three phase TRANSFORMER

calculation of IGBT snubber

spice model three phase TRANSFORMER

spice model three phase TRANSFORMER

UC3842 SMD

730A-04

AEG T 25 N 1000

BUT93

transistor Bc 542

3772 stepper

4229P-L00-3C8

S 170 MOSFET TRANSISTOR