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    TRANSISTOR BS250 Search Results

    TRANSISTOR BS250 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BS250 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor

    Abstract: transistor ITT BC548 pnp transistor transistor pnp BC337 pnp transistor pnp bc547 transistor BC327 NPN transistor MPSA92 168 transistor 206 2n3904 TRANSISTOR PNP
    Text: Alphanumerical List of Types TVpe Page 2N3904 2N3906 2N4124 2N4126 2N7000 2N7002 Small-Signal Transistor NPN Small-Signal Transistor (PNP) Small-Signal Transistor (NPN) Small-Signal Transistor (PNP) DMOS Transistor (N-Channel) DMOS Transistor (N-Channel)


    OCR Scan     		2N3904 2N3906 2N4124 2N4126 2N7000 2N7002 BC327 BC328 BC337 BC338 transistor transistor ITT BC548 pnp transistor transistor pnp BC337 pnp transistor pnp bc547 transistor BC327 NPN transistor MPSA92 168 transistor 206 2n3904 TRANSISTOR PNP PDF

    BS250

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BS250 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor


    Original     		BS250 SC13b SCA54 137107/00/01/pp8 BS250 BP317 PDF

    BS250

    Abstract: Philips RDS business BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BS250 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor


    Original     		BS250 SC13b SCA54 137107/00/01/pp8 BS250 Philips RDS business BP317 PDF

    BS250

    Abstract: diode ITT 172 ITT Intermetall bs250 ITT DIODE
    Text: BS250 P-Channel Enhancement Mode DMOS Transistor Features - high input impedance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway - no secondary breakdown On special request, this transistor is also manufactured


    OCR Scan     		BS250 500mA BS250 diode ITT 172 ITT Intermetall bs250 ITT DIODE PDF

    BS250

    Abstract: transistor wz transistor BS250 to92 transistor pinout
    Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor DESCRIPTION BS250 QUICK REFERENCE DATA P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and


    OCR Scan     		BS250 7Z94273 SC-43 transistor wz transistor BS250 to92 transistor pinout PDF

    Untitled

    Abstract: No abstract text available
    Text: BS250 P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • • • • Low RpSon D irect interface to C MOS


    OCR Scan     		BS250 PDF

    BS250

    Abstract: max 083
    Text: BS250 A _ P-CHANNEL VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in TO -92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • • • • Very low RoSon Direct interface to C-MOS


    OCR Scan     		BS250 003b013 7Z94272A bbS3T31 BS250 max 083 PDF

    Untitled

    Abstract: No abstract text available
    Text: BS250 JV P-CHANNEL VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • • • • V ery low Ro So n D irect interface to C-MOS


    OCR Scan     		BS250 53T31 003bD13 bbS3T31 003bD14 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor DESCRIPTION QUICK REFERENCE DATA P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and


    OCR Scan     		BS250 PDF

    BS250P

    Abstract: No abstract text available
    Text: BS250 VISHAY P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features_ • • • • High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown TO-92 Mechanical Data • • • •


    OCR Scan     		BS250 MIL-STD-202, 100ft DS21902 BS250P PDF

    VMOS Transistor

    Abstract: BS250
    Text: BS250 Enhancement Mode P-Channel VMOS Transistor Features: High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown m ax.Q 5# Plastic case ~ JEDEC TO-92 TO-18 compatible


    OCR Scan     		BS250 VMOS Transistor BS250 PDF

    2n7000 complement

    Abstract: bs250 complement 2n7000+complement TP0610LVT 2N7000 transistor BS250
    Text: •J E T * incorporated VPDS1 DIE P-Channel Enhancement-Mode MOS Transistor VPDS1CHP* BS250 TP0610LVT VP0610L/T ‘ Meets or exceeds specification for all part numbers listed below Source Pad 0.0041 0 . 104 0.0049 For additional design information please consult the


    OCR Scan     		BS250 TP0610LVT VP0610L/T VPDS06. 2N7000) 125-C 2n7000 complement bs250 complement 2n7000+complement 2N7000 transistor BS250 PDF

    BS250

    Abstract: No abstract text available
    Text: BS250 Vishay Semiconductors formerly General Semiconductor DMOS Transistor P-Channel TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) Features • • • • • • • High input impedance High-speed switching No minority carrier storage time


    Original     		BS250 O-226AA 20K/box 20K/box 10-May-02 BS250 PDF

    bs250

    Abstract: P-CHANNEL D-MOS transistor p-channel transistor 5k
    Text: BS250 DMOS Transistor P-Channel TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • • • • • • • max. ∅ 0.022 (0.55) High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input


    Original     		BS250 O-226AA bs250 P-CHANNEL D-MOS transistor p-channel transistor 5k PDF

    bs250

    Abstract: No abstract text available
    Text: BS250 DMOS Transistor P-Channel TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • • • • • • • High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway


    Original     		BS250 O-226AA 20K/box 20K/box bs250 PDF

    BS250

    Abstract: No abstract text available
    Text: BS250 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown h-EH h H TO-92 Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7 — D 0.41 0.63 Mechanical Data_


    OCR Scan     		BS250 MIL-STD-202, DS21902 BS250 PDF

    Untitled

    Abstract: No abstract text available
    Text: BS250 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR POWER SEMICONDUCTOR Features • • • • High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A Mechanical Data • • • • TO-92 B C Case: TO-92, Plastic


    Original     		BS250 MIL-STD-202, DS21902 PDF

    Untitled

    Abstract: No abstract text available
    Text: BS250 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A Mechanical Data · · · · TO-92 B C Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,


    Original     		BS250 MIL-STD-202, DS21902 PDF

    BS250

    Abstract: mm6v 343gd
    Text: BS250 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A Mechanical Data · · · · TO-92 B C Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,


    Original     		BS250 MIL-STD-202, DS21902 BS250 mm6v 343gd PDF

    BS250

    Abstract: av236 nj10
    Text: c p = G e n e r a l xJ S e m i c o n d u c t o r _ BS250 DMOS Transistor P-Channel) Features • High input impedance • High-speed switching • No minority carrier storage time • CMOS logic compatible input • No thermal runaway • No secondary breakdown


    OCR Scan     		BS250 20K/box 20K/box BS250 av236 nj10 PDF

    BS250

    Abstract: equivalent of BS250 BS250 datasheet
    Text: BS250 DMOS Transistors P-Channel TO-92 FEATURES .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) ♦ ♦ ♦ ♦ ♦ ♦ High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown


    Original     		BS250 BS250 equivalent of BS250 BS250 datasheet PDF

    bs250

    Abstract: No abstract text available
    Text: BS250 DMOS Transistors P-Channel TO-92 _FEATURES High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown 098 ( 2 . 5 ) _ MECHANICAL DATA_ Case: TO-92 Plastic Package


    OCR Scan     		BS250 500mA bs250 PDF

    Zener Diode 3v 400mW

    Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
    Text: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –


    Original     		DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF BU2520AF 16kHz BY328 Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998 PDF

    HITAG2 protocol

    Abstract: HITAG PROTOCOL HITAG2 MLX90109 PROTOCOL HITAG command MLX90109 HITAG 2 PROTOCOL BAT43 BS250 HITAG 2 command
    Text: Application Note 100% modulation On-Off Keying 1 Scope This application note explains how to use the MLX90109 transceiver to obtain 100% modulation of the magnetic field (On-Off keying modulation). The MLX90109 datasheet will help to understand the basic operating principles and specifications before reading this document.


    Original     		MLX90109 MLX90125 MLX90109) MLX90109. May-2004 MLX90109, HITAG2 protocol HITAG PROTOCOL HITAG2 MLX90109 PROTOCOL HITAG command HITAG 2 PROTOCOL BAT43 BS250 HITAG 2 command PDF