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    TRANSISTOR BS 170 Search Results

    TRANSISTOR BS 170 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BS 170 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bs 170

    Abstract: BS 050 transistor Q67000-S076
    Text: BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 170 60 V 0.3 A 5Ω TO-92 BS 170 Type BS 170 Ordering Code Q67000-S076 D Tape and Reel Information


    Original     		PDF Q67000-S076 E6288 bs 170 BS 050 transistor Q67000-S076

    Q67000-S076

    Abstract: BS 050 transistor transistor BS 170
    Text: BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 170 60 V 0.3 A 5Ω TO-92 BS 170 Type BS 170 Ordering Code Q67000-S076 D Tape and Reel Information


    Original     		PDF Q67000-S076 E6288 Q67000-S076 BS 050 transistor transistor BS 170

    S 170 TRANSISTOR

    Abstract: transistor BS 170 bs 170 Q67000-S076 bs170 Transistor Bs
    Text: SIPMOS Small-Signal Transistor BS 170 ● VDS 60 V 0.3 A ● ID ● RDS on 5.0 Ω ● VGS(th) 0.8 … 2.0 V ● N channel ● Enhancement mode ● Logic level 2 3 1 1 Type Ordering Code Tape and Reel Information 1 2 3 BS 170 Q67000-S061 bulk S G D BS 170


    Original     		PDF Q67000-S061 Q67000-S076 E6288: S 170 TRANSISTOR transistor BS 170 bs 170 Q67000-S076 bs170 Transistor Bs

    bs170

    Abstract: 5K02 MARKING BS
    Text: SIEMENS BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V 5 VPT05158 Pin 1 Pin 2 S Type VDS b BS 170 60 V 0.3 A Type BS 170 BS 170 Ordering Code Q67000-S061 Q67000-S076 Pin 3 G ^DS(on) Package


    OCR Scan     		PDF VPT05158 Q67000-S061 Q67000-S076 E6288 11---------------------------------O bs170 5K02 MARKING BS

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • V^GS th = 0.8.2.0V Pin 1 Pin 2 S Type VDS b BS 170 60 V 0.3 A Type BS 170 Ordering Code Q67000-S076 %S(on) 5Û Pin 3 G Package Marking TO-92 BS 170 D


    OCR Scan     		PDF Q67000-S076

    Untitled

    Abstract: No abstract text available
    Text: BS 170 I nf ineon la c h n o I og i • s SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 VPT05548 • ^GS th = 0-8-2.0V Pin 3 Pin 2 Pin 1 G S Type ^OS b flDS(on) Package Marking BS 170 60 V 0.3 A 5Ü TO-92 BS 170 Type


    OCR Scan     		PDF VPT05548 Q67000-S076 E6288 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    BLV38

    Abstract: 4312 020 36642 transistor bd 346 class A push pull power amplifier PHILIPS 4312 amplifier sot179
    Text: PHILIPS INTERNATIONAL bS E D • 711GÔ5ti DDt.2R2R Jl 557 ■ BLV38 VHF LINEAR PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use In linear V H F television transmitters vision o r sound amplifiers .


    OCR Scan     		PDF 711Gfl5ti BLV38 711002t. 0b2c13fl BLV38 4312 020 36642 transistor bd 346 class A push pull power amplifier PHILIPS 4312 amplifier sot179

    BUK427-400A

    Abstract: BUK427-400B UNC20
    Text: N AMER □ □ 2 0 2 bS 4 SSE D PHILIPS/DISCRETE PowerMOS transistor BUK427-400A BUK427-400B r-rh }} GENERAL DESCRIPTION SYMBOL Cfl G > N-channef enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


    OCR Scan     		PDF BUK427-400A BUK427-400B BUK427 -400A -400B UNC20

    2SK774

    Abstract: No abstract text available
    Text: 6427525 N E C ELECTRONICS as SaSyir.";- FEATU RES 98D 18925 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ~Tfi D ESCRIPTIO N INC D E | b457S2S OQlfl^BS fl 2SK774 The 2SK774 is N-channel MOS Field Effect Power Transistor designed for switching power supplies OC-OC converter.


    OCR Scan     		PDF 2SK774

    BUK427-400A

    Abstract: 100-P BUK427-400B lD25-c RI LGR
    Text: N AMER btiS3'i31 □□202 bS SSE D P H I L I P S / D I SC RE T E 4 PowerMOS transistor BUK427-400A BUK427-400B • GENERAL DESCRIPTION SYMBOL CO Û > N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


    OCR Scan     		PDF BUK427-400A BUK427-400B BUK427 -400A -400B 100-P BUK427-400B lD25-c RI LGR

    BS170

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Small-Signal Transistor BS 170 VDS = 60 V / o = 0 .3 A ^DS on = 5.0 Q -4.2- • N channel • Enhancement mode • Package: TO-92 a 1) 1.6 0.4 GPT05573 taped version Type Ordering code for version on tape Ordering code for version in bulk


    OCR Scan     		PDF Q67000-S076 Q67000-S285 Q67000-S061 GQ54112 E35bOS BS170

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 357 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 357 1000 V 5.1 A ^bS on Package Ordering Code 2w TO-218 AA C67078-S3110-A2 Maximum Ratings Parameter Symbol Continuous drain current Id Tc = 25 °C


    OCR Scan     		PDF O-218 C67078-S3110-A2 200-----V

    VPT05155

    Abstract: buz90 SiEMENS PM 350 98 C67078-S1321-A2 s34 diode transistor buz 90 GP-051
    Text: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 90 Vds 600 V 10 ^bS on Package Ordering Code 4.5 A 1.6Í2 TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values


    OCR Scan     		PDF VPT05155 O-220 C67078-S1321-A2 VPT05155 buz90 SiEMENS PM 350 98 C67078-S1321-A2 s34 diode transistor buz 90 GP-051

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 339 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 339 b 11.5 A l/bs 500 V ^bsion Package Ordering Code 0.5 n TO-218 AA C67078-S3133-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values


    OCR Scan     		PDF O-218 C67078-S3133-A2 235b05 O-218AA A235bGS

    Untitled

    Abstract: No abstract text available
    Text: Motor driver ICs 3-phase motor driver BA6871BS The BA6871 BS is a 3-phase, full-wave, pseudo-linear motor driver suited for VCR capstan motors. The IC has a torque ripple cancellation circuit to reduce wow and flutter, and an output transistor saturation prevention circuit that


    OCR Scan     		PDF BA6871BS BA6871

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 384 SIPMOS Power Transistor • N channel • Enhancement mode • FR ED FET Type Vos BUZ 384 500 V 4> 10.5 A *bs on 0.6 w Package Ordering Code TO-218AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Drain source voltage Vos Drain-gate voltage


    OCR Scan     		PDF O-218AA C67078-A3209-A2 O-218AA

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ10S2 Not for new design SIPMOS @Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ10S2 ^bs 60 V to HDS on Package Ordering Code 23 A 0.07 Í 2 TO-220 AB C67078-S1300-A7 Maximum Ratings Parameter Symbol Values Continuous drain current


    OCR Scan     		PDF BUZ10S2 O-220 C67078-S1300-A7 A235bG5 A235b05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds BUZ 90 600 V 4.5 A ^bS on Package Ordering Code 1 .6 Q TO-220 AB C67078-S1321-A2 Maxim um Ratings Parameter Symbol Continuous drain current fc = = b


    OCR Scan     		PDF O-220 C67078-S1321-A2 023SbD5 OOA4471

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 347 50 V h 45 A ^bs on Package Ordering Code 0.03 n TO-218AA C67078-S31 15-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-218AA C67078-S31 15-A2 fl23SbOS

    transistor buz 10

    Abstract: No abstract text available
    Text: SIEMENS BUZ 10 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type B U Z 10S 2 Vbs 60 V b 23 A ^bs on 0.07 n Package Ordering Code TO-220 AB C67078-S1300-A7 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1300-A7 transistor buz 10

    resistor MR25 philips

    Abstract: resistor MR25 philips MR25 MR25 resistor MR25 philips Metal film resistor MF led MR25 MR25 DGB27 transistor nf
    Text: PHILIPS INTERNATIONAL bS E D □0LE713 711Dö2b 0 2 ö I IPHIN BLU20/12 U.H.F. POWER TRANSÌSTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile


    OCR Scan     		PDF 711D02b 0LE713 BLU20/12 OT-119) 711002b 0b2720 resistor MR25 philips resistor MR25 philips MR25 MR25 resistor MR25 philips Metal film resistor MF led MR25 MR25 DGB27 transistor nf

    GES6014

    Abstract: GES6015 GES6016 GES6017 affa 18
    Text: 1989963 CENTRAL SEM C O N D U C T O R _ 6 1 C 0 0 2 3 0 ti graf&Gsfl gSHBB6©K€il©SS@F @@51-3. de -r-â9 '£L 00DDE3D b I • GES6014 GES6016 C@BS€?CSl SemftfiGQnSfilBCtOr Corp. Central semiconductor Corp. NPN SILICON TRANSISTOR 1 4 5 Adams Avenue


    OCR Scan     		PDF GES6014 GES6016 to-92 GES6014, GES6016 GES6015, GES6017 CBR30 GES6015 affa 18

    ecn 3-Phase Motor Driver IC

    Abstract: BA6871 BA6871BS SDIP32 motor breaker gv2
    Text: Motor driver ICs 3-phase motor driver BA6871BS The BA6871 BS is a 3-phase, full-w ave, p se u d o -lin e a r m o to r driver suite d for VCR cap stan m otors. The IC has a torque ripple cancellation circuit to reduce w ow and flutter, and an output transistor saturation prevention circuit that


    OCR Scan     		PDF BA6871BS BA6871BS ecn 3-Phase Motor Driver IC BA6871 SDIP32 motor breaker gv2

    Untitled

    Abstract: No abstract text available
    Text: 1989963 CENTRAL SEM C O N D U C T O R _ 6 1 C 0 0 2 3 0 - r - 2 9 ' 3 1 ti graf&Gsfl gSfiîB6e©Bi^5SÊ@P @@51-3. de I n t m b B • 00DDE3D b GES6014 GES6016 C@BS€?CSl g©DlliS@HÖö£tOP Corp. Central sem iconductor Corp. NPN SILICON TRANSISTOR


    OCR Scan     		PDF 00DDE3D GES6014 GES6016 GES6014, GES6016 GES6015, GES6017 CBR10Series, CBR25Ser/es