TRANSISTOR BR D882 Search Results

TRANSISTOR BR D882 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR BR D882 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1. EMITTER PCM: 1.25 W (Tamb=25℃) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage V V(BR)CBO: 40	Original	O-126 O-126 100mA 10MHz	PDF
D882 Abstract: transistor D882 datasheet IC 6650 D882 TRANSISTOR br d882 J D882 transistor D882 h D882 datasheet d882 TRANSISTOR br D882 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TRANSISTOR（NPN） TO—251 FEATURES 1.BASE Power dissipation PCM : 1.25W（Tamb=25℃） Collector current ICM: 3A Collector-base voltage V BR CBO : 40V Operating and storage junction temperature range	Original	O-251 O--251 25WTamb Co200 091TYP 300TYP D882 transistor D882 datasheet IC 6650 D882 TRANSISTOR br d882 J D882 transistor D882 h D882 datasheet d882 TRANSISTOR br D882	PDF
D882 TRANSISTOR Abstract: No abstract text available Text: TO-92 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.75 W (Tamb=25℃) 3. BASE Collector current 3 A ICM: Collector-base voltage V V(BR)CBO: 40 Operating and storage junction temperature range	Original	100mA 10MHz D882 TRANSISTOR	PDF
D882 TRANSISTOR Abstract: transistor D882 datasheet D882 p br d882 D882 br d882 p transistor "D882 p" TRANSISTOR D882 TRANSISTOR br D882 7400 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR（ NPN ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 3 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range	Original	O-126 O--126 Coll00 290TYP 090TYP D882 TRANSISTOR transistor D882 datasheet D882 p br d882 D882 br d882 p transistor "D882 p" TRANSISTOR D882 TRANSISTOR br D882 7400	PDF
D882 TRANSISTOR Abstract: D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 D882 to 92 D882 TO-92 d882 npn transistor transistor D882 datasheet D882 -TO-92 Text: D882 D882 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.75 W (Tamb=25℃) 3. BASE Collector current ICM: 3 A Collector-base voltage V V(BR)CBO: 40 Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃	Original	100mA 10MHz D882 TRANSISTOR D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 D882 to 92 D882 TO-92 d882 npn transistor transistor D882 datasheet D882 -TO-92	PDF
TRANSISTOR D882 input Abstract: D882 D882 TRANSISTOR sot 89 D882 N E C D882 D882 P D882 sot transistor marking D882 h D882 transistor D882 datasheet Text: D882 SOT-89 Plastic-Encapsulate Transistors Transistor NPN FEATURES D Power dissipation A 4 o µ¥Î» £ºmm P CM :1.25 W (Tamb=25 C) E HE •û ºÅ Collector current Marking V (BR)CBO :40 V 3 b1 2 C 1.BASE min ·û ºÅ 1.5 3 0.65 e1 0.65 HE 1.6 max 4.25	Original	OT-89 OT-89 TRANSISTOR D882 input D882 D882 TRANSISTOR sot 89 D882 N E C D882 D882 P D882 sot transistor marking D882 h D882 transistor D882 datasheet	PDF
N E C D882 Abstract: br d882 p D882 TRANSISTOR TRANSISTOR D882 t p br d882 to-126 D882 tp P H D882 TRANSISTOR br D882 br d882 Text: M C C TO-126 P lastic-E n cap su late T r a n s is t o r s ^ D882 TRANSISTOR NPN FE A T UR E S Pow er d issip ation TO-126 Pcm : 1.25W (Tamb=25“C ) Collector current 1.E M I T T E R lew: 3 A 2.C O L L E C T O R Collector-base voltage V(BR)CBO; 40 V 3.B A S E	OCR Scan	O-126 O-126 N E C D882 br d882 p D882 TRANSISTOR TRANSISTOR D882 t p br d882 to-126 D882 tp P H D882 TRANSISTOR br D882 br d882	PDF
D882 TRANSISTOR Abstract: TRANSISTOR br D882 D882 TRANSISTOR D882 br d882 d882 npn transistor NPN D882 transistor D882* transistor NPN TRANSISTOR D882 transistor Ic 1A NPN Text: D882 Transistor NPN 1. BASE TO-252-2L 2. COLLECTOR 3 .EMITTER Features Power dissipation Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage	Original	O-252-2L 10MHz D882 TRANSISTOR TRANSISTOR br D882 D882 TRANSISTOR D882 br d882 d882 npn transistor NPN D882 transistor D882* transistor NPN TRANSISTOR D882 transistor Ic 1A NPN	PDF
TRANSISTOR D882S Abstract: D882S d882* npn transistor d882s transistor npn transistor Ic 1A NPN Text: D882S Transistor NPN TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage	Original	D882S 10MHz TRANSISTOR D882S D882S d882* npn transistor d882s transistor npn transistor Ic 1A NPN	PDF
TRANSISTOR br D882 Abstract: D882 transistor D882 br d882 d882 power transistor d882 npn transistor d882 npn D882 TRANSISTOR d882* npn transistor NPN TRANSISTOR D882 Text: D882 NPN TO-251 Transistor TO-251 1. EMITTER 2. COLLECTOR 3．BASE 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage	Original	O-251 O-251 10MHz TRANSISTOR br D882 D882 transistor D882 br d882 d882 power transistor d882 npn transistor d882 npn D882 TRANSISTOR d882* npn transistor NPN TRANSISTOR D882	PDF
D882 sot Abstract: D882 sot89 sot 89 D882 TRANSISTOR br D882 NPN TRANSISTOR D882 TRANSISTOR D882 TRANSISTOR D882 sot-89 D882 TRANSISTOR D882 Y sot-89 d882 Text: D882 SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 Features B 2.6 4.25 2.4 3.75 0.8 MIN Power dissipation 0.44 0.37 0.13 B MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 0.53 0.48 0.40 2x) 0.35 1.5 3.0 Dimensions in inches and (millimeters)	Original	OT-89 OT-89 100mA 10MHz D882 sot D882 sot89 sot 89 D882 TRANSISTOR br D882 NPN TRANSISTOR D882 TRANSISTOR D882 TRANSISTOR D882 sot-89 D882 TRANSISTOR D882 Y sot-89 d882	PDF
d882 Abstract: TRANSISTOR br D882 br d882 to-126 transistor D882 d882 npn br d882 D882 TRANSISTOR TO-126 D882 d882 npn transistor d882 power transistor Text: D882 NPN TO-126 Transistor TO-126 2.500 1.100 2.900 1.500 7.400 7.800 1. EMITTER 3.900 4.100 3.000 2. COLLECTOR 3.200 10.60 0 11.00 0 3. BASE 3 0.000 0.300 2 Features 1 2.100 2.300 Power dissipation 1.170 1.370 15.30 0 15.70 0 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	O-126 O-126 10MHz d882 TRANSISTOR br D882 br d882 to-126 transistor D882 d882 npn br d882 D882 TRANSISTOR TO-126 D882 d882 npn transistor d882 power transistor	PDF
D882S Abstract: TRANSISTOR D882S datasheet d882 Text: D882S NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  Power Dissipation G H J A CLASSIFICATION OF hFE REF. D A B C D E F G H J K B K Rank Range R Y GR	Original	D882S 08-Oct-2010 D882S TRANSISTOR D882S datasheet d882	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors D882 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 3 A ICM: Collector-base voltage	Original	OT-89 OT-89 100mA 10MHz	PDF

Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D882S TRANSISTOR NPN TO-92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	D882S 10MHz	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D882S TRANSISTOR NPN TO-92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO	Original	D882S 10MHz	PDF
D882S Abstract: TRANSISTOR D882S datasheet d882 D882 d882s transistor npn Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D882S TRANSISTOR NPN TO-92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	D882S 10MHz D882S TRANSISTOR D882S datasheet d882 D882 d882s transistor npn	PDF
D882 TRANSISTOR Abstract: transistor D882 D882 transistor D882 datasheet br d882 to-126 TRANSISTOR br D882 br d882 d882 power transistor datasheet d882 NPN TRANSISTOR D882 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	O-126 O-126 10MHz D882 TRANSISTOR transistor D882 D882 transistor D882 datasheet br d882 to-126 TRANSISTOR br D882 br d882 d882 power transistor datasheet d882 NPN TRANSISTOR D882	PDF
D882 TRANSISTOR Abstract: d882 to252 TO 252 D882 D882 TRANSISTOR br D882 TRANSISTOR D882 252 d882 transistor D882 to252 br d882 transistor D882 datasheet Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors TO-252 D882 TRANSISTOR NPN FEATURES 1. BASE Power dissipation 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	O-252 O-252 10MHz D882 TRANSISTOR d882 to252 TO 252 D882 D882 TRANSISTOR br D882 TRANSISTOR D882 252 d882 transistor D882 to252 br d882 transistor D882 datasheet	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power Dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage	Original	O-126 O-126 10MHz	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-251 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage	Original	O-251 O-251 10MHz	PDF
d882 to-92 Abstract: TRANSISTOR br D882 d882 y Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	100mA 10MHz d882 to-92 TRANSISTOR br D882 d882 y	PDF
D882 TRANSISTOR Abstract: D882 sot 89 D882 TRANSISTOR D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 sot-89 D882 sot89 d882 power transistor transistor D882 datasheet Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT -89 Plastic-Encapsulate D882 TRANSISTOR NPN Transistors SOT-89 1. BASE FEATURES 2. COLLECTOR Power dissipation 1 2 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value	Original	OT-89 100mA 10MHz D882 TRANSISTOR D882 sot 89 D882 TRANSISTOR D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 sot-89 D882 sot89 d882 power transistor transistor D882 datasheet	PDF
d882 to-92 Abstract: D882 -TO-92 D882 D882 TRANSISTOR transistor D882 D882 to 92 d882 china TRANSISTOR br D882 Br d882 NPN TRANSISTOR D882 Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn D882 TRANSISTOR NPN TO-92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units	Original	100mA 10MHz d882 to-92 D882 -TO-92 D882 D882 TRANSISTOR transistor D882 D882 to 92 d882 china TRANSISTOR br D882 Br d882 NPN TRANSISTOR D882	PDF

TRANSISTOR BR D882 Search Results

TRANSISTOR BR D882 Result Highlights (5)

TRANSISTOR BR D882 Datasheets Context Search

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D882

D882 TRANSISTOR

D882 TRANSISTOR

D882 TRANSISTOR

TRANSISTOR D882 input

N E C D882

D882 TRANSISTOR

TRANSISTOR D882S

TRANSISTOR br D882

D882 sot

d882

D882S

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D882S

D882 TRANSISTOR

D882 TRANSISTOR

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d882 to-92

D882 TRANSISTOR

d882 to-92