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    TRANSISTOR BR 13003D Search Results

    TRANSISTOR BR 13003D Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BR 13003D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 13003d

    Abstract: 13003d br 13003d 13003d TRANSISTOR transistor br 13003d ST13003D-K transistor st 13003d NPN transistor 13003D ELECTRONIC BALLAST transistor DIAGRAM transistor ST 13003D w, TO-126
    Text: ST13003D-K High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode


    Original     		PDF ST13003D-K OT-32 transistor 13003d 13003d br 13003d 13003d TRANSISTOR transistor br 13003d ST13003D-K transistor st 13003d NPN transistor 13003D ELECTRONIC BALLAST transistor DIAGRAM transistor ST 13003D w, TO-126

    transistor 13003d

    Abstract: 13003d 13003d TRANSISTOR equivalent br 13003d 13003D TRANSISTOR 13003D Datasheet transistor st 13003d NPN transistor 13003D ST13003D-K w 13003d TRANSISTOR npn
    Text: ST13003D-K High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode


    Original     		PDF ST13003D-K OT-32 transistor 13003d 13003d 13003d TRANSISTOR equivalent br 13003d 13003D TRANSISTOR 13003D Datasheet transistor st 13003d NPN transistor 13003D ST13003D-K w 13003d TRANSISTOR npn

    13003d

    Abstract: transistor 13003d
    Text: ST13003D-K High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode


    Original     		PDF ST13003D-K OT-32 13003d transistor 13003d

    13003D

    Abstract: transistor 13003d NPN transistor 13003D transistor br 13003d br 13003d
    Text: A Product Line of Diodes Incorporated Green APT13003D 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data •          BVCEO > 450V BVCES > 700V BVEBO > 9V IC = 1.5A high Continuous Collector Current Integrated Collector-Emitter Diode to act as free-wheeling diode


    Original     		PDF APT13003D MIL-STD-202, 200mg 400mg DS36347 13003D transistor 13003d NPN transistor 13003D transistor br 13003d br 13003d

    13003D

    Abstract: No abstract text available
    Text: DXT13003DG 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 450V • • • BVCES > 700V BVEBO > 9V • • IC = 1.5A high Continuous Collector Current • • Integrated Collector-Emitter Diode to act as free-wheeling diode


    Original     		PDF DXT13003DG OT223 J-STD-020 MIL-STD-202, DS37262 13003D

    13003D

    Abstract: br 13003d transistor 13003d br+13003d
    Text: DXT13003DK 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252 Features Mechanical Data • BVCEO > 450V • • BVCES > 700V • Case Material: Molded Plastic, "Green" Molding Compound • BVEBO > 9V • • • IC = 1.5A high Continuous Collector Current Integrated Anti-Parallel Diode to act as free-wheeling diode


    Original     		PDF DXT13003DK J-STD-020 MIL-STD-202, DS37297 13003D br 13003d transistor 13003d br+13003d