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    TRANSISTOR BQ Search Results

    TRANSISTOR BQ Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BQ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2PB601A

    Abstract: 2PB601
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PB709A PNP general purpose transistor Product specification Supersedes data of 1997 Jun 19 1999 Apr 23 Philips Semiconductors Product specification PNP general purpose transistor 2PB709A FEATURES PINNING


    Original     		PDF M3D114 2PB709A SC-59 2PB601A. 2PB709AQ 2PB709AS MAM322 2PB709AR SCA63 2PB601A 2PB601

    transistor marking PB

    Abstract: Transistor marking BQ sot marking code BQ sot323 transistor marking 2SC4081W transistor bq
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4081W FEATURES z Excellent hFE linearity. z Complements the 2A1576A Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No.


    Original     		PDF 2SC4081W 2A1576A OT-323 BL/SSSTF002 transistor marking PB Transistor marking BQ sot marking code BQ sot323 transistor marking 2SC4081W transistor bq

    transistor bq

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2412 FEATURES Pb Low Cob,Cob=2.0pF. z z Lead-free Complementary to 2SA1037 APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2412


    Original     		PDF 2SC2412 2SA1037 OT-23 BL/SSSTC020 transistor bq

    marking BQ sot-23

    Abstract: marking Bq sot23 2SC2412 bq transistor sot23 sot-23 CODE BS Transistor marking BQ 12V marking code sot 23 marking BS SOT23 sot-23 MARKING CODE BS transistor 12v 1A NPN
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2412 FEATURES Pb Low Cob,Cob=2.0Pf z z Lead-free Complementary to 2SA1037 APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2412


    Original     		PDF 2SC2412 2SA1037 OT-23 BL/SSSTC020 marking BQ sot-23 marking Bq sot23 2SC2412 bq transistor sot23 sot-23 CODE BS Transistor marking BQ 12V marking code sot 23 marking BS SOT23 sot-23 MARKING CODE BS transistor 12v 1A NPN

    Transistor marking BQ

    Abstract: marking BQ BQ MARKING transistor BQ
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC5658NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPA2029NND03


    Original     		PDF WBFBP-03B WBFBP-03B TPC5658NND03 TPA2029NND03 100MHz TPC5658NND03 Transistor marking BQ marking BQ BQ MARKING transistor BQ

    Transistor marking BQ

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC5658NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPA2029NND03


    Original     		PDF WBFBP-03B WBFBP-03B TPC5658NND03 TPA2029NND03 100MHz Transistor marking BQ

    BF422

    Abstract: BF423
    Text: UTC BF422 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=250V. *Complementary to BF423. APPLICATIONS * High voltage application. * Monitor equipment application. 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C


    Original     		PDF BF422 BF423. QW-R201-063 BF422 BF423

    2N7002 spice

    Abstract: 2N7002 sot363 2n7002 12 CTA2P1N 2N7002 J-STD-020A MMBT4403 a80 marking code 2n7002 spice model
    Text: CTA2P1N COMPLEX TRANSISTOR ARRAY SPICE MODEL: CTA2P1N NEW PRODUCT Features • Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P Also Available in Lead Free Version · · · SOT-363


    Original     		PDF MMBT4403 2N7002 OT-363 OT-363, MIL-STD-202, J-STD-020A CQ1N7002) 500mA 200mA 2N7002) 2N7002 spice 2N7002 sot363 2n7002 12 CTA2P1N 2N7002 J-STD-020A a80 marking code 2n7002 spice model

    2N7002

    Abstract: MMBT4403 a80 marking code 2N7002-00 2N7002 sot363
    Text: SPICE MODEL: CTA2P1N CTA2P1N COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features • · · · Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P SOT-363 Lead Free/RoHS Compliant Note 1


    Original     		PDF MMBT4403 2N7002 OT-363 MIL-STD-202, DS30296 a80 marking code 2N7002-00 2N7002 sot363

    Untitled

    Abstract: No abstract text available
    Text: HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features Mechanical Data • • • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Sub-Component P/N


    Original     		PDF HBDM60V600W MMBT2907A MMBTA06 OT-363 J-STD-020D MIL-STD-202, DS30701

    Untitled

    Abstract: No abstract text available
    Text: UTC BF422 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=250V. *Complementary to BF423. APPLICATIONS * High voltage application. * Monitor equipment application. 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C


    Original     		PDF BF422 BF423. QW-R201-063

    A03 transistor

    Abstract: No abstract text available
    Text: CTA2N1P COMPLEX TRANSISTOR ARRAY SPICE MODEL: CTA2N1P NEW PRODUCT Features • · · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N Also Available in Lead Free Version SOT-363


    Original     		PDF MMBT4401 BSS84 OT-363 OT-363, MIL-STD-202, J-STD-020A 300mA 100mA MMBT4401) A03 transistor

    BSS84

    Abstract: J-STD-020A MMBT4401 A03 transistor
    Text: CTA2N1P COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features • · · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N Also Available in Lead Free Version SOT-363 A Mechanical Data


    Original     		PDF MMBT4401 BSS84 OT-363 OT-363, MIL-STD-202, J-STD-020A MMBT4401) DS30295 100mA 300mA J-STD-020A A03 transistor

    a80 marking code

    Abstract: A80G part marking id
    Text: CTA2P1N COMPLEX TRANSISTOR ARRAY SPICE MODEL: CTA2P1N NEW PRODUCT Features • Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P Also Available in Lead Free Version · · · SOT-363


    Original     		PDF MMBT4403 2N7002 OT-363 OT-363, MIL-STD-202, J-STD-020A 2N7002) 500mA 200mA a80 marking code A80G part marking id

    Untitled

    Abstract: No abstract text available
    Text: BQ S92 J \_ FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant enve ope, intended fo r use in relay, high-speed and line-transformer drivers, and as a line current interruptor n telephony


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: KST4403 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector-Base Voltage Col lector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol


    OCR Scan     		PDF KST4403 OT-23

    Untitled

    Abstract: No abstract text available
    Text: Central" CMPT2222AE Sem iconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT NPN SILICON TRANSISTOR The Central Semiconductor CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications,


    OCR Scan     		PDF CMPT2222AE CMPT2222A OT-23 150mA,

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2PD601A

    Abstract: No abstract text available
    Text: Philips Semiconductors H 711002b 0070015 b4S HPHIN PNP general purpose transistor Objective specification 2PB709; 2PB709A PIN CONFIGURATION FEATURES • High DC current gain • Low collector-emitter saturation voltage. _ DESCRIPTION _ 2 1 C PNP transistor in a plastic SC59


    OCR Scan     		PDF 711002b 2PB709; 2PB709A 2PD601 2PD601A -SC59 2PB709Q: 2PB709R: 2PB709S: 2PB709AQ:

    marking IAM transistor sot-23

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MSB1218A-RT1 PNP Silicon General Purpose A m plifier Transistor Motorola Preferred Devices This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package


    OCR Scan     		PDF MSB1218A-RT1 SC-70/SOT-323 7-inch/3000 b3b72SS b3b7255 marking IAM transistor sot-23

    transistor bq 17

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN video transistor BFQ221 APPLICATIONS • Primarily intended for buffer stages in high resolution colour monitors. DESCRIPTION PIN i DESCRIPTION 1 base 2 collector 3 emitter f i\.! î f y NPN silicon transistor encapsulated


    OCR Scan     		PDF BFQ221 transistor bq 17

    CBC 557 C

    Abstract: CBC 557 AF139 1j 400 CBC 557 B TFK AF 72136 72136 p AF 139 germanium-pnp-hf-transistor
    Text: Germanium-PNP-HF-Transistor Germanium PNP RF Transistor Anwendungen: Vor-, Misch- und Oszillatorstufen bis 860 MHz Applications: Pre, mixer and oscillator stages up to 860 M Hz Besondere Merkmale: Features: • Leistungsverstärkung >9 dB • Pow er gain > 9 dB


    OCR Scan     		PDF

    philips 22 ah 590

    Abstract: npn 2222 transistor 629 08103 BFG198 TRANSISTOR FQ Philips 2222 032
    Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic S O T 223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.


    OCR Scan     		PDF BFG198 OT223 7110fl2b MSA035 OT223. 711002b philips 22 ah 590 npn 2222 transistor 629 08103 TRANSISTOR FQ Philips 2222 032