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    TRANSISTOR BP 109 Search Results

    TRANSISTOR BP 109 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BP 109 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS LP2985A-XX Very low noise, low dropout, 150 mA linear regulator, CMOS process technology Product data Supersedes data of 2003 May 12 Philips Semiconductors 2003 Jul 31 Philips Semiconductors Product data Very low noise, very low dropout, 150 mA linear


    Original     		PDF LP2985A-XX LP2985A-XX

    LP2985A-28D

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS LP2985A-XX Very low noise, low dropout, 150 mA linear regulator, CMOS process technology Product data Supersedes data of 2003 Jul 31 Philips Semiconductors 2003 Aug 18 Philips Semiconductors Product data Very low noise, very low dropout, 150 mA linear


    Original     		PDF LP2985A-XX LP2985A-XX LP2985A-28D

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage M3D087 PZT2222A NPN switching transistor Product data sheet Supersedes data of 1997 Jun 02 1999 Apr 14 NXP Semiconductors Product data sheet NPN switching transistor PZT2222A PINNING FEATURES • High current max. 600 mA


    Original     		PDF M3D087 PZT2222A OT223 PZT2907A. MAM287 OT223) 115002/00/03/pp7

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage M3D087 PZT4401 NPN switching transistor Product data sheet 1999 May 10 NXP Semiconductors Product data sheet NPN switching transistor PZT4401 PINNING FEATURES • High current max. 600 mA PIN • Low voltage.


    Original     		PDF M3D087 PZT4401 OT223 PZT4403. MAM287 ZT4401 OT223) 115002/00/01/pp7

    zt4401

    Abstract: BP 109 transistor PZT4401 PZT4403 SC-73 SOT223 nxp
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT4401 NPN switching transistor Product data sheet 1999 May 10 NXP Semiconductors Product data sheet NPN switching transistor FEATURES PZT4401 PINNING • High current max. 600 mA PIN • Low voltage.


    Original     		PDF M3D087 PZT4401 OT223 PZT4403. MAM287 ZT4401 OT223) 115002/00/01/pp7 zt4401 BP 109 transistor PZT4401 PZT4403 SC-73 SOT223 nxp

    PZT2222A

    Abstract: PZT2907A SC-73 BP 109 transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT2222A NPN switching transistor Product data sheet Supersedes data of 1997 Jun 02 1999 Apr 14 NXP Semiconductors Product data sheet NPN switching transistor PZT2222A FEATURES PINNING • High current max. 600 mA


    Original     		PDF M3D087 PZT2222A OT223 PZT2907A. MAM287 OT223) 115002/00/03/pp7 PZT2222A PZT2907A SC-73 BP 109 transistor

    BP317

    Abstract: PZT4401 PZT4403
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT4401 NPN switching transistor Product specification 1999 May 10 Philips Semiconductors Product specification NPN switching transistor FEATURES PZT4401 PINNING • High current max. 600 mA PIN


    Original     		PDF M3D087 PZT4401 OT223 PZT4403. MAM287 ZT4401 OT223) 115002/00/01/pp8 BP317 PZT4401 PZT4403

    BP317

    Abstract: PZT2222A PZT2907A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT2222A NPN switching transistor Product specification Supersedes data of 1997 Jun 02 1999 Apr 14 Philips Semiconductors Product specification NPN switching transistor PZT2222A FEATURES PINNING


    Original     		PDF M3D087 PZT2222A OT223 PZT2907A. MAM287 OT223) SCA63 115002/00/03/pp8 BP317 PZT2222A PZT2907A

    uPB1509B

    Abstract: poly silicon resistor mmic j
    Text: 1, Introduction In the fields of comm unication systems and consumer electronics e.g.CATV receivers, SHF broadcasting reseivers and BS/CS tuners , analog and degital ICs from UHF to microwave frequency range are widely used. These analog and degital ICs are required for compactness, economy


    Original     		PDF uPB1509B PB15O9B poly silicon resistor mmic j

    w2 mark 5 pin mosfet smd

    Abstract: Philips SC07 Small-signal Transistors transistor bf 175
    Text: For an update of this information, please go to the package website. SC18_1999_.book : SC18_PREFACE_1999 i Wed May 12 11:40:55 1999 Philips Semiconductors Discrete Semiconductor Packages Preface TABLE OF CONTENTS Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iii


    Original     		PDF

    TRANSISTOR SMD CODE PACKAGE SOT89 52 10A

    Abstract: smd transistor g1-L philips ic06 cmos databook Soldering guidelines and SMD footprint design MSB430 Philips Components, Soft Ferrites Data Handbook M display dc05 humidity sensor philips H1 soft ferrites philips handbook Philips Components, Soft Ferrites Data Handbook
    Text: SC18_1999_.book : SC18_PREFACE_1999 i Wed May 12 11:40:55 1999 Philips Semiconductors Discrete Semiconductor Packages Preface TABLE OF CONTENTS Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iii


    Original     		PDF

    BSH101

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH101 N-channel enhancement mode MOS transistor Product speciÞcation Supersedes data of 1997 Nov 28 File under Discrete Semiconductors, SC13b 2000 Jul 19 Philips Semiconductors Product specification


    Original     		PDF M3D088 BSH101 SC13b SCA56 137107/00/02/pp12 BSH101

    BSH101

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH101 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1997 June 19 File under Discrete Semiconductors, SC13b 1997 Nov 28 Philips Semiconductors Product specification


    Original     		PDF M3D088 BSH101 SC13b SCA56 137107/00/02/pp12 BSH101

    Untitled

    Abstract: No abstract text available
    Text: BF904; BF904R N-channel dual gate MOS-FETs Rev. 06 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


    Original     		PDF BF904; BF904R BF904R

    BF904R

    Abstract: BF904 marking code mc
    Text: BF904; BF904R N-channel dual gate MOS-FETs Rev. 06 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


    Original     		PDF BF904; BF904R BF904R BF904 marking code mc

    BF1101WR

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 NXP Semiconductors Product specification BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs FEATURES PINNING


    Original     		PDF BF1101; BF1101R; BF1101WR MSB035 BF1101R R77/02/pp15 BF1101WR

    BF1201WR

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 1999 Dec 01 2000 Mar 29 NXP Semiconductors Product specification BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs FEATURES


    Original     		PDF BF1201; BF1201R; BF1201WR MSB035 BF1201R R77/02/pp15 BF1201WR

    BF1201

    Abstract: BF1201R BF1201WR 7555 ID c2328 dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 1999 Dec 01 2000 Mar 29 NXP Semiconductors Product specification BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs


    Original     		PDF BF1201; BF1201R; BF1201WR MSB035 BF1201R R77/02/pp15 BF1201 BF1201WR 7555 ID c2328 dual-gate

    BF1101WR

    Abstract: "MARKING CODE NC" MGS303 BF1101 BF1101R MGS302 dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 NXP Semiconductors Product specification BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs FEATURES


    Original     		PDF BF1101; BF1101R; BF1101WR MSB035 BF1101R R77/02/pp15 BF1101WR "MARKING CODE NC" MGS303 BF1101 MGS302 dual-gate

    opr12

    Abstract: opr 12 Mosfet J49 9mfp 7291P TA8425H 8212F 7774P TA7363AP 24 dip "transistor array"
    Text: 1. FUNCTION INDEX General Information E quipm ent Model Package Max. rating Functions Page TC9142P DIP 16 - 8-bit D/A conversion-type F /V P/V converter incorporated, no adjustm ent required 527 TC9192P/F DIP 18 /F L P 2 0 - Double PLL controller incorporating 8-bit D/A


    OCR Scan     		PDF TC9142P SQP20P-300 TC9142P, TC9192P/F TC9203P/F TC5081AP TA7715P TA7712P/F TD62318AP 62803P opr12 opr 12 Mosfet J49 9mfp 7291P TA8425H 8212F 7774P TA7363AP 24 dip "transistor array"

    2SA636

    Abstract: HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A 2SC1098 251C 2SA636A 2SC1098A tup pnp transistor
    Text: 2SA636, 636A /2SC 1098, 1098A 2SA636, 2SA636A/2SC1098, 2SC1098A PNP/NPN i t ' ^ v T J U J B v ' J =i> h 7 > v T .^ / P N P / N P N SILICON EPIT A X IA L TRANSISTOR {S ilJS iX - i y ^ v y f f l / A u d i o Frequency Power Amplifier, Low Speed Switching I ^ /F E A T U R E S


    OCR Scan     		PDF 2SA636, 2SA636A 2SC1098, 2SC1098A 2SA636A/2SC1098, 2SA636 2SA636AA 350/is, HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A 2SC1098 251C 2SC1098A tup pnp transistor

    2n6673

    Abstract: 2n6671 RCA8767
    Text: 7=35 ~ / 9 2N6671, 2N6672, 2N6673 HARRIS SEMICON] SECTOR File Number Sb E D 1090 43 D2 271 GOMObOfl 7fl7 « H A S 5-A SwitchM a* Power Transistors T -3 3 -3 1 High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications


    OCR Scan     		PDF 2N6671, 2N6672, 2N6673 T0-204AA T0-204AA 2N6673* 2n6671 RCA8767

    BF1101WR

    Abstract: No abstract text available
    Text: Philips Semiconductors N - c h a n n e l d u a l- g a te Product specification M O S -F E T s B F1101; B F1101R ; B F1101W R PINNING FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio PIN • Low noise gain controlled amplifier


    OCR Scan     		PDF F1101; F1101R F1101W MSB035 BF1101R OT143R) BF1101 BF1101R; BF1101WR OT343R BF1101WR

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN switching transistor PZT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). DESCRIPTION 1 base 2, 4 APPLICATIONS collector 3 emitter • Switching and linear amplification.


    OCR Scan     		PDF PZT2222A OT223 PZT2907A. OT223) OT223